• Title/Summary/Keyword: Mo Film

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Preparation of nanoparticles CuInSe2 absorber layer by a non-vacuum process of low cost cryogenic milling (저가의 cryogenic milling 비진공법을 이용한 나노입자 CuInSe2 광흡수층 제조)

  • Kim, Ki-Hyun;Park, Byung-Ok
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.23 no.2
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    • pp.108-113
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    • 2013
  • Chalcopyrite material $CuInSe_2$ (CIS) is known to be a very prominent absorber layer for high efficiency thin film solar cells. Current interest in the photovoltaic industry is to identify and develop more suitable materials and processes for the fabrication of efficient and cost-effective solar cells. Various processes have been being tried for making a low cost CIS absorber layer, this study obtained the CIS nanoparticles using commercial powder of 6 mm pieces for low cost CIS absorber layer by high frequency ball milling and cryogenic milling. And the CIS absorber layer was prepared by paste coating using milled-CIS nanoparticles in glove box under inert atmosphere. The chalcopyrite $CuInSe_2$ thin films were successfully made after selenization at the substrate temperature of $550^{\circ}C$ in 30 min, CIS solar cell of Al/ZnO/CdS/CIS/Mo structure prepared under various deposition process such as evaporation, sputtering and chemical vapor deposition respectively. Finally, we achieved CIS nanoparticles solar cell of electric efficient 1.74 % of Voc 29 mV, Jsc 35 $mA/cm^2$ FF 17.2 %. The CIS nanoparticles-based absorber layers were characterized by using EDS, XRD and HRSEM.

Friction Characteristics of DLC and WC/C (DLC와 WC/C의 마찰특성)

  • Kim, Dong-Wook;Kim, Kyung-Woong
    • Tribology and Lubricants
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    • v.27 no.6
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    • pp.308-313
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    • 2011
  • In this study, friction tests were performed in order to investigate the effect of sliding velocity and normal load on the friction characteristics of DLC (a-C:H) and WC/C (a-C:H:W) using a ball-on-disk type friction tester. DLC and WC/C were deposited on AISI 52100 steel balls. Friction tests against carburized SCM 415 Cr-Mo steel disks were carried out under various sliding velocity (0.1, 0.78, 1.56, 3.13, 6.25, 12.5, 25, 50 and 100 mm/s) and normal load (2.4, 4.8 and 9.6 N) conditions while the relative humidity was 20~40 % R.H. and air temperature was $16{\sim}24^{\circ}C$. As results, kinetic friction coefficients of DLC and WC/C were obtained under each test condition. The results show that the kinetic friction coefficients of DLC and WC/C generally increase with the increase in sliding velocity. And, under the same sliding velocity condition, the kinetic friction coefficients are almost constant regardless of normal load. In addition, the kinetic friction coefficients of DLC are lower than those of WC/C under the same test conditions.

Stress and Relective Index of ${SiN}_{x}$ and ${SiN}_{x}/\textrm{SiO}_{x}/{SiN}_{x}$ Films as Membranes of Micro Gas Sensor (Micro Gas Sensor의 Membrane용 ${SiN}_{x}$막과 ${SiN}_{x}/\textrm{SiO}_{x}/{SiN}_{x}$막의 응력과 굴절율)

  • Lee, Jae-Seok;Sin, Seong-Mo;Park, Jong-Wan
    • Korean Journal of Materials Research
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    • v.7 no.2
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    • pp.102-106
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    • 1997
  • Micro gas sensors including thin film catal) tic type require stress-free memhrancs for etch stop of Si anisotropic etching and sublayer of sensing elements hecause stress is one of the main factors affecting breakdown of thin membranes. This paper reports the effects of deposition conditions on stress and refractive index of $SiN_{x}/SiO_{x}/(NON)$ films deposited by low pressure c11ernic;rl vapor deposition(L, t'CVI)) 2nd reactve sputtering. In the case of I.PCVI1, the stresses of $SiN_{x}$ and NON films arc $7.6{\times}10^{8}dyne/cm^2$ and $3.3{\times}10^{8}dyne/cm^2$, respectibely, and the refractive indices are 3.05 and 152, respectively. In the cxse oi the sputtered SiN, , compressi\e stress decreased in magnitude and then turned to tensility as increasing proc, ess pressure by lmtorr to 30mtorr and cicreasmg applied power density by $2.74W/cm^2$ to $1.10W/cm^2$. The hest value of film stress obt;~ined under condition of lOmtorr and $1.37W/cm^2$ in this' experiment was $1.2{\times}10^{9}dyne/cm^2$ cnnipressive. The refr~ict~ve index decreased from 2 05 to 1 89 as decreasing applied power density by lnitorr to 3Orntorr and increasing process pressure hy $2.74W/cm^2$ to $1.10W/cm^2$. Stresses of films deposited by both LPCVL) and sputtering decreased as incre;lsing temperature and showed plastic behavior as decreasing temperature.

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Weed Occurrences, Growth and Yield of Sorghum (Sorghum bicolor) by Hairy Vetch and Partial-Width Tillage (헤어리베치와 부분경운에 의한 잡초발생과 수수의 생육 및 수량)

  • Hwang, Jae-Bok;Jung, Ki-Youl;Yun, Eul-Soo;Choi, Young-Dae;Hyun, Jong-Nae;Yun, Jong-Tag;Oh, In-Souk;Lee, Byung-Mo
    • Weed & Turfgrass Science
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    • v.3 no.4
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    • pp.318-322
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    • 2014
  • The effects of cover crops on weed suppression were evaluated in this study. Weed suppressing effects of hairy vetch cover crops were evaluated in summer grain fields. Cover crops were sown at the sowing rate of $60kg\;ha^{-1}$ on Oct. 2012 and Feb. 2013 without basal fertilization. Three weeks old sorghum seedlings were transplanted after minimum tillage on June 2013. Hairy vetch cover crop treatment significantly reduced weed biomass in the transplanted sorghum. By smothering, the cover crops reduced weed biomass to economic level in sorghum. Besides the weed suppression, hairy vetch cover crop resulted in green manure effect on crop growth. Hairy vetch treatment showed beneficial effects on sorghum growth. Reduction of weeds caused by use of strip-tillage machine and polyethylene film mulching was 71% and 88%, respectively. At harvest, yield of sorghum was greater in order of polyethylene film mulching > hairy vetch cover crop > control in transplanted fields.

Si and Mg doped Hydroxyapatite Film Formation by Plasma Electrolytic Oxidation

  • Park, Seon-Yeong;Choe, Han-Cheol
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2016.11a
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    • pp.195-195
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    • 2016
  • Titanium and its alloys are widely used as implants in orthopedics, dentistry and cardiology due to their outstanding properties, such as high strength, high level of hemocompatibility and enhanced biocompatibility. Hence, recent works showed that the synthesis of new Ti-based alloys for implant application involves more biocompatible metallic alloying element, such as, Nb, Hf, Zr and Mo. In particular, Nb and Hf are one of the most effective Ti ${\beta}-stabilizer$ and reducing the elastic modulus. Plasma electrolyte oxidation (PEO) is known as excellent method in the biocompatibility of biomaterial due to quickly coating time and controlled coating condition. The anodized oxide layer and diameter modulation of Ti alloys can be obtained function of improvement of cell adhesion. Silicon (Si) and magnesium (Mg) has a beneficial effect on bone. Si in particular has been found to be essential for normal bone and cartilage growth and development. In vitro studies have shown that Mg plays very important roles in essential for normal growth and metabolism of skeletal tissue in vertebrates and can be detected as minor constituents in teeth and bone. The aim of this study is to research Si and Mg doped hydroxyapatite film formation by plasma electrolytic oxidation. Ti-29Nb-xHf (x= 0, 3, 7 and 15wt%, mass fraction) alloys were prepared Ti-29Nb-xHf alloys of containing Hf up from 0 wt% to 15 wt% were melted by using a vacuum furnace. Ti-29Nb-xHf alloys were homogenized for 2 hr at $1050^{\circ}C$. Each alloy was anodized in solution containing typically 0.15 M calcium acetate monohydrate + 0.02 M calcium glycerophosphate at room temperature. A direct current power source was used for the process of anodization. Anodized alloys was prepared using 270V~300V anodization voltage at room. A Si and Mg coating was produced by RF-magnetron sputtering system. RF power of 100W was applied to the target for 1h at room temperature. The microstructure, phase and composition of Si and Mg coated oxide surface of Ti-29Nb-xHf alloys were examined by FE-SEM, EDS, and XRD.

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Effect of exposure time and image resolution on fractal dimension (노출 시간과 영상 해상도가 프랙탈 차원값에 미치는 영향)

  • An Byung-Mo;Heo Min-Suk;Lee Seung-Pyo;Lee Sam-Sun;Choi Soon-Chul;Park Tae-Won;Kim Jong-Dae
    • Imaging Science in Dentistry
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    • v.32 no.2
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    • pp.75-79
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    • 2002
  • Purpose : To evaluate the effect of exposure time and image resolution on fractal dimension calculations for determining the optimal range of these two variances. Materials and Methods : Thirty-one radiographs of the mandibular angle area of sixteen human dry mandibles were taken at different exposure times (0.01, 0.08, 0.16, 0.25, 0.40, 0.64, and 0.80 s). Each radiograph was digitized at 1200 dpi, 8 bit, 256 gray level using a film scanner. We selected an Region of Interest (ROI) that corresponded to the same region as in each radiograph, but the resolution of ROI was degraded to 1000, 800, 600, 500, 400, 300, 200, and 100 dpi. The fractal dimension was calculated by using the tile-counting method for each image, and the calculated values were then compared statistically. Results: As the exposure time and the image resolution increased, the mean value of the fractal dimension decreased, except the case where exposure time was set at 0.01 seconds (α = 0.05). The exposure time and image resolution affected the fractal dimension by interaction (p<0.001). When the exposure time was set to either 0.64 seconds or 0.80 seconds, the resulting fractal dimensions were lower, irrespective of image resolution, than at shorter exposure times (α = 0.05). The optimal range for exposure time and resolution was determined to be 0.08- 0.40 seconds and from 400-1000 dpi, respectively. Conclusion : Adequate exposure time and image resolution is essential for acquiring the fractal dimension using tile-counting method for evaluation of the mandible.

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Role of Sulfone Additive in Improving 4.6V High-Voltage Cycling Performance of Layered Oxide Battery Cathode (층상계 산화물 양극의 4.6V 고전압 특성 향상에서의 Sulfone 첨가제의 역할)

  • Kang, Joonsup;Nam, Kyung-Mo;Hwang, Eui-Hyeong;Kwon, Young-Gil;Song, Seung-Wan
    • Journal of the Korean Electrochemical Society
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    • v.19 no.1
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    • pp.1-8
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    • 2016
  • Capacity of layered lithium nickel-cobalt-manganese oxide ($LiNi_{1-x-y}Co_xMn_yO_2$) cathode material can increase by raising the charge cut-off voltage above 4.3 V vs. $Li/Li^+$, but it is limited due to anodic instability of conventional electrolyte. We have been screening and evaluating various sulfone-based compounds of dimethyl sulfone (DMS), diethyl sulfone (DES), ethyl methyl sulfone (EMS) as electrolyte additives for high-voltage applications. Here we report improved cycling performance of $LiNi_{0.5}Co_{0.2}Mn_{0.3}O_2$ cathode by the use of dimethyl sulfone (DMS) additive under an aggressive charge condition of 4.6 V, compared to that in conventional electrolyte, and cathode-electrolyte interfacial reaction behavior. The cathode with DMS delivered discharge capacities of $198-173mAhg^{-1}$ over 50 cycles and capacity retention of 84%. Surface analysis results indicate that DMS induces to form a surface protective film at the cathode and inhibit metal-dissolution, which is correlated to improved high-voltage cycling performance.

Dosimetric Characteristics of Multileaf Collimator-based Intensity-modulated Arc Therapy for Stereotactic Radiosurgery (방사선수술 시 다엽 콜리메이터를 기초로 한 IMAT의 선량분포)

  • Yun, Sang-Mo;Kim, Sung-Kyu
    • Progress in Medical Physics
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    • v.18 no.2
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    • pp.93-97
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    • 2007
  • This study was designed to evaluate radiosurgery technique using multiple noncoplanar arc therapy with intensity modulated fine MLC shaped photon beam. The stereotactic radiosurgery was performed with 6-MV X-ray beams from a Clinac 21EX LINAC (Varian, Palo Alto, CA, USA) with a MLC-120, which features a full $40{\times}40cm$ field and is the first MLC for general use that offers 0.5 cm resolution for high precision treatment of small and irregular fields. We used a single isocenter and five gantry-couch combinations with a set of intensity modulated arc therapy. We investigated dosimetric characteristics of 2 cm sized spherical target volume with film (X-OMAT V2 film, Kodak Inc, Rochester NY, USA) dosimetry within $25{\times}25cm$ acrylic phantom. A simulated single isocentric treatment using inversely Planned 3D radiotherapy planning system demonstrated the ability to conform the dose distribution to an spherical target volume. The 80% dose level was adequate to encompass the target volume in frontal, sagittal, and transverse planes, and the region between the 40% and 80% isodose lines was $4.0{\sim}4.5mm$ and comparable to the dose distribution of the Boston Arcs. We expect that our radiosurgery technique could be a treatment option for irregular-shaped large intracranial target.

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Analysis of Mammography for Patient with Breast Cancer (유방암 환자를 대상으로 한 유방영상검사 분석)

  • Mo, Eun-Hui;Lim, Cheong-Hwan;Lee, Sang-Ho;Jung, Hong-Ryang;Lee, Hye-Nam
    • Journal of radiological science and technology
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    • v.34 no.1
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    • pp.1-7
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    • 2011
  • The purpose of this study is to evaluate the diagnostic accuracy of breast cancer from mammography images and to investigate the characteristics of patients who was diagnosed as a breast cancer. The subjects for this study were 85 patients who underwent breast imaging test with screen-film method and investigated from March 2010 to October 2010. The average age of the subjects is 51.9 years old. The 43.5% of onsets were located at the upper outer quadrant (UOQ). In terms of the age group, group for 40-49 ages were highest 37.6 (32/85)%. As for breast composition, fatty and dense breast were 30.6% (26/85) and 69.4% (59/85) respectively. The average age of the patients with fatty breast is 62.4 years old, whereas those with dense breast was 46.5 years old. The false negative rate of mammography images was 27.1% (23/85) and the sensitivity of mammography was 72.9% (62/85). The false negative rate of the patients with dense breast was 32.2% (19/59). the sensitivity of them was 67.8% (40/59).

InGaN/GaN Blue LED device 제조시 ALD (Atomic Layer Deposition) 방법으로 증착된 Al2O3 Film의 Passivation 효과

  • Lee, Seong-Gil;Bang, Jin-Bae;Yang, Chung-Mo;Kim, Dong-Seok;Lee, Jeong-Hui
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.211-212
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    • 2010
  • GaN 기반의 상부발광형 LED는 동작되는 동안 생기는 전기적 단락, 그리고 칩 위의 p-형 전극과 n-형 전극 사이에 생기는 누설전류 및 신뢰성 확보를 위하여 칩 표면에 passivation 층을 형성하게 된다. SiO2, Si3N4와 같은 passivation layers는 일반적으로 PECVD (Plasma Enhanced Chemical Vapor Deposition)공정을 이용한다, 하지만 이는 공정 특성상 plasma로 인한 damage가 유발되기 때문에 표면 누설 전류가 증가 한다. 이로 인해 forward voltage와 reverse leakage current의 특성이 저하된다. 본 실험에서는 원자층 단위의 박막 증착으로 인해 PECVD보다 단차 피복성이 매우 우수한 PEALD(Plasma Enhanced Atomic Layer Deposition)공정을 이용하여 Al2O3 passivation layer를 증착한 후, 표면 누설전류와 빛의 출력 특성에 대해서 조사해 보았다. PSS (patterned sapphire substrate) 위에 성장된 LED 에피구조를 사용하였고, TCP(Trancformer Copled Plasma)장비를 사용하여 에칭 공정을 진행하였다. 이때 투명전극을 증착하기 위해 e-beam evaporator를 사용하여 Ni/Au를 각각 $50\;{\AA}$씩 증착한 후 오믹 특성을 향상시키기 위하여 $500^{\circ}C$에서 열처리를 해주었다. 그리고 Ti/Au($300/4000{\AA}$) 메탈을 사용하여 p-전극과 n-전극을 형성하였다. Passivation을 하지 않은 경우에는 reverse leakage current가 -5V 에서 $-1.9{\times}10-8$ A 로 측정되었고, SiO2와 Si3N4을 passivation으로 이용한 경우에는 각각 $8.7{\times}10-9$$-2.2{\times}10-9$로 측정되었다. Fig. 1 에서 보면 알 수 있듯이 5 nm의 Al2O3 film을 passivation layer로 이용할 경우 passivation을 하지 않은 경우를 제외한 다른 passivation 경우보다 reverse leakage current가 약 2 order ($-3.46{\times}10-11$ A) 정도 낮게 측정되었다. 그 이유는 CVD 공정보다 짧은 ALD의 공정시간과 더 낮은 RF Power로 인해 plasma damage를 덜 입게 되어 나타난 것으로 생각된다. Fig. 2 에서는 Al2O3로 passivation을 한 소자의 forward voltage가 SiO2와 Si3N4로 passivation을 한 소자보다 각각 0.07 V와 0.25 V씩 낮아지는 것을 확인할 수 있었다. 또한 Fig. 3 에서는 Al2O3로 passivation을 한 소자의 output power가 SiO2와 Si3N4로 passivation을 한 소자보다 각각 2.7%와 24.6%씩 증가한 것을 볼 수 있다. Output power가 증가된 원인으로는 향상된 forward voltage 및 reverse에서의 leakage 특성과 공기보다 높은 Al2O3의 굴절률이 광출력 효율을 증가시켰기 때문인 것으로 판단된다.

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