• Journal of the Korean Ceramic Society
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• v.33 no.8
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• pp.863-870
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• 1996

Fabricated modified PZT system for pyroelectric IR sensor were analyzed and characterized for dielectric piezoelectric and pyroelectric properties. Particle size and distribution of source powders were controlled by attrition milling process. 0.05PSS+yPT+(0.95-y)PZ+0.4 wt%MnO2 system was fabricated and investigated sintering density crystal structure and micro-structure through sintering conditions sintering temperature and sintering atmosphere. The poled sintered system of y=0.11 showed the lowest dielectric constant. The dielectric constants were increased with increasing y-mole ratio. The pyroelectric properties of modified PZT systems which were assembled to TO-5 package were measured by IR measurement system average out-voltage of 0.05PSS+0.1PT+0.84PZ+ wt%MnO2 was 3V.

• Journal of the Mineralogical Society of Korea
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• v.12 no.2
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• pp.77-90
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• 1999

Characteristics and variations of chemical compositions in Co-rich crusts occurred in the EEZ of the Republic of Marshall Islands were reviewed. Correlation coefficient analysis, hierarchical cluster analysis, and Q-mode factor analysis for 62 samples were done in this study. All data were selected and gathered from the open file report of the cooperative cruise done by United States Geological Survey with Scripps Institute of Oceanography, University of Hawaii or Korea Ocean Research Development Institute. The average of crust thickness. Co content, and Ni content of 62 samples from the 21 seamounts were 30mm, 0.58 wt% and 0.40%, respectively. The mineral phases and associated elements assigned by correlation coefficients, cluster analysis and Q-mode factor analysis are following four. 1) CFA: P, Ca, CO2, Y, Sr: 2) Mn-oxide mineral: As, Mn, Co, Na: 3) Al-silicate mineral: Pd,Si, Al, Cu, Fe: 4) PGE-bearing mineral: Rh, Pt, Ir.

• Proceedings of the Korean Magnestics Society Conference
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• 2006.06a
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• pp.34-35
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• 2006

• Proceedings of the Korean Magnestics Society Conference
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• 2006.11a
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• pp.40-41
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• 2006

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2008.11a
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• pp.371-374
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• 2008

The performance of several catalysts to decompose the high test peroxide (HTP) was described in this paper. Manganese oxide, Platinum and Iridium were coated on the gamma alumina. The response time of various catalysts was measured with a 50 Newton class thruster. Ir/$Al_2O_3$ that showed the fastest response time at the thruster, failed the reaction when continuous mode test was carried out with the thruster. Pt/$Al_2O_3$ and MnO_2/Al_2O_3$ can be substitutes to decompose the HTP. In addition, for larger thruster, MnO_2/Al_2O_3$ can be a good catalyst because its cost is below 5 % of Pt/$Al_2O_3$.

• Journal of the Korean Society of Propulsion Engineers
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• v.12 no.5
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• pp.26-34
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• 2008

The performance of several catalysts to decompose the high test peroxide (HTP) was described in this paper. Manganese oxide, Platinum and Iridium were coated on the gamma alumina. The catalyst activity as active materials was measured at the flask reactor. The response time of various catalysts was also measured with a 50 Newton class thruster. $Ir/Al_2O_3$ that showed the best activity in the flask reactor and response time at the thruster, failed the reaction when continuous mode test was carried out with the thruster. $Pt/Al_2O_3$ and $MnO_2/Al_2O_3$ can be substitutes to decompose the HTP. In addition, for larger thruster, $MnO_2/Al_2O_3$ can be a good catalyst because its cost is below 5 % of $Pt/Al_2O_3$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.390-390
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• 2012

Information technology industries has grown rapidly and demanded alternative memories for the next generation. The most popular random access memory, dynamic random-access memory (DRAM), has many advantages as a memory, but it could not meet the demands from the current of developed industries. One of highlighted alternative memories is magnetic random-access memory (MRAM). It has many advantages like low power consumption, huge storage, high operating speed, and non-volatile properties. MRAM consists of magnetic-tunnel-junction (MTJ) stack which is a key part of it and has various magnetic thin films like CoFeB, FePt, IrMn, and so on. Each magnetic thin film is difficult to be etched without any damages and react with chemical species in plasma. For improving the etching process, a high density plasma etching process was employed. Moreover, the previous etching gases were highly corrosive and dangerous. Therefore, the safety etching gases are needed to be developed. In this research, the etch characteristics of CoFeB magnetic thin films were studied by using an inductively coupled plasma reactive ion etching in $CH_4/O_2/Ar$ gas mixes. TiN thin films were used as a hardmask on CoFeB thin films. The concentrations of $O_2$ in $CH_4/O_2/Ar$ gas mix were varied, and then, the rf coil power, gas pressure, and dc-bias voltage. The etch rates and the selectivity were obtained by a surface profiler and the etch profiles were observed by a field emission scanning electron microscopy. X-ray photoelectron spectroscopy was employed to reveal the etch mechanism.