• Current Applied Physics
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• v.18 no.11
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• pp.1306-1312
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• 2018

The Mn-doped copper nitride ($Cu_3N$) films with Mn concentration of 2.0 at. % have high crystallinity and uniform surface morphology. We found that the as-synthesized Mn-doped $Cu_3N$ films show suitable optical absorption in the visible region and the band gap is ~1.48 eV. A simple photodetector based on Mn doped $Cu_3N$ films was firstly fabricated via magnetron sputtering method. The fabricated device with doping of Mn demonstrated high photocurrent response and fast response shorter than 0.1 s both for rise and decay time superior to the pure $Cu_3N$. Furthermore, the energy levels of Mn-doped Cu3N matched well with ITO and Ag electrode. The excellent photoelectric properties reflect a good balance between sensitivities and response rate. Our investigation reveals the excellent potential of Mn-doped $Cu_3N$ films for application of photodetectors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.8
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• pp.665-670
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• 2009

Lead-free piezoelectric ($Na_{1/2}K_{1/2}$)$NbO_3$ ceramics doped with CuO and $MnO_2$ were fabricated using the conventional oxide-mixing technique. With increasing content of CuO and $MnO_2$, the dielectric constant(${\varepsilon}_{33}$) and mechanical quality factor($Q_m$) value increased, while electromechanical coupling factor($K_p$) and piezoelectric constant($d_{33}$) decreased. The piezoelectric and dielectric properties ($Na_{1/2}K_{1/2}$)$NbO_3$ ceramics doped with CuO 2.461 wt% and $MnO_2$ 0.538 wt% at sintered temperature $1050\;^{\circ}C$ were attained ${\varepsilon}_{33}$ = 403, $K_p$ = 15, $Q_m$ = 122 and $d_{33}$ = 36 pC/N. Based on response surface methodology results using design of experiment, it was concluded that ($Na_{1/2}K_{1/2}$)$NbO_3$ doped with CuO 0.477 wt% and $MnO_2$ 0.269 wt% has possibility composition of being used for piezoelectric transformer.

• Transactions of the Korean hydrogen and new energy society
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• v.28 no.1
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• pp.1-8
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• 2017

Cu/Mn/Ce catalysts for water gas shift (WGS) reaction were synthesized by urea-nitrate combustion method with the fixed molar ratio of Cu/Mn as 1:4 and 1:1 with the doping concentration of Ce from 0.3 to 0.8 mol%. The prepared catalysts were characterized with SEM, BET, XRD, XPS, $H_2$-TPR, $CO_2$ TPD, $N_2O$ chemisorption analysis. The catalytic activity tests were carried out at a GHSV of $28,000h^{-1}$ and a temperature range of 200 to $400^{\circ}C$. The Cu/Mn(CM) catalysts formed Cu-Mn mixed oxide of spinel structure ($Cu_{1.5}Mn_{1.5}O_4$) and manganese oxides ($MnO_x$). However, when a small amount of Ce was doped, the growth of $Cu_{1.5}Mn_{1.5}O_4$ was inhibited and the degree of Cu dispersion were increased. Also, the doping of Ce on the CM catalyst reduced the reduction temperature and the base site to induce the active site of the catalyst to be exposed on the catalyst surface. From the XPS analysis, it was confirmed that maintaining the oxidation state of Cu appropriately was a main factor in the WGS reaction. Consequently, Ce as support and dopant in the water gas shift reaction catalysts exhibited the enhanced catalytic activities on CM catalysts. We found that proper amount of Ce by preparing catalysts with different Cu/Mn ratios.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.825-830
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• 2014

$[(Co_{1-x}Cu_x)_{0.2}(Ni_{0.3}Mn_{0.7})_{0.8}]_3O_4$ ($0{\leq}x{\leq}1$) thin films prepared by metal organic decomposition process were fabricated on SiN/Si substrate for infrared sensor application. Their structural and electrical properties were investigated with variation of Cu dopant. The $[(Co_{1-x}Cu_x)_{0.2}(Ni_{0.3}Mn_{0.7})_{0.8}]_3O_4$ (CCNMO) film annealed at $500^{\circ}C$ exhibited a dense microstructure and a homogeneous crystal structure with a cubic spinel phase. Their crystallinity was further enhanced with increasing doped Cu amount. The 120 nm-thick CCNMO (x=0.6) thin film had a low resistivity of $53{\Omega}{\cdot}cm$ at room temperature while the Co-free film (x=1) showed a significantly decreased resistivity of $5.9{\Omega}{\cdot}cm$. Furthermore, the negative temperature coefficient of resistance (NTCR) characteristics were lower than $-2%/^{\circ}C$ for all the specimens with $x{\geq}0.6$. These results imply that the CCNMO ($x{\geq}0.6$) thin films are a good candidate material for infrared sensor application.

• Journal of the Korean Chemical Society
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• v.56 no.1
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• pp.34-46
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• 2012

Dopants and defects can be introduced as well as the intercalation of metals into single wall carbon nanotubes (SWCNTs) to modify their electronic and magnetic properties, thus significantly widening their application areas. Through spinpolarized density functional theory (DFT) calculations, we have systemically studied the following: (i) (10,0) and (5,5) SWCNT doped with nitrogen ($CN_xNT$), (ii) (10,0) and (5,5) SWCNT with pyridine-like defects (3NV-$CN_xNT$), and (iii) chemical functionalization of (10,0) and (5,5) 3NV-$CN_xNT$ with 12 different transition metals (TMs) (Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Pd, and Pt). Attention was done in searching for the most stable configurations, deformation, calculating the formation energies, and exploring the effects of the doping concentration of nitrogen and pyridine-like nitrogenated defects on the electronic properties of the nanotubes. Also, calculating the corresponding binding energies and effects of chemical functionalization of TMs on the electronic and magnetic properties of the nanotubes has been made. We found out that the electronic properties of SWCNT can be effectively modified in various ways, which are strongly dependent not only on the concentration of the adsorbed nitrogen but also to the configuration of the adsorbed nitrogen impurities, the pyridine-like nitrogenated defects, and the TMs absorbed; due to the strong interaction between the d orbitals of TMs and the p orbitals of N atoms, the binding strengths of TMs with the two 3NV-$CN_xNT$ are significantly enhanced when compared to the pure SWCNTs.

• Transactions on Electrical and Electronic Materials
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• v.18 no.6
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• pp.334-337
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• 2017

In this paper, to develop the ceramics with high $d_{33}$ and high $Q_m$ for ultrasonic transducer applications, $0.10Pb(Ni_{1/3}Nb_{2/3})O_3-0.07Pb(Mn_{1/3}Nb_{2/3})O_3-0.83Pb(Zr_{0.5}Ti_{0.5})_{0.83}O_3$ (PNN-PMN-PZT) ceramics were sintered at $940^{\circ}C$ using $CuO-Li_2CO_3-Bi_2O_3$ (CLBO) as a sintering aid by a traditional solid-state technique. The influence of zinc oxide additive on the physical properties of the prepared ceramics were systematically investigated. The R-T (rhombohedral-tetragonal) phase coexistence was found in the ceramics without zinc oxide additive and with increasing amounts of ZnO additive, the specimens showed a tetragonal phase. The formation of a liquid phase between ZnO and $Bi_2O_3$ contributed significantly to the grain growth of specimens. For the 0.1 wt% ZnO ceramics, the optimal physical properties of $d_{33}=370pC/N$, ${\varepsilon}_r=1,344$, $k_p=0.621$, and $Q_m=1,523$ were obtained.