Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Structural and Electrical Properties of [(Co1-xCux)0.2(Ni0.3Mn0.7)0.8]3O4 Spinel Thin Films for Infrared Sensor Application

적외선 센서용 [(Co1-xCux)0.2(Ni0.3Mn0.7)0.8]3O4 스피넬 박막의 구조 및 전기적 특성

  • Lee, Kui Woong (Intelligent Electronic Component Team, Korea Institute of Ceramic Engineering and Technology) ;
  • Jeon, Chang Jun (Intelligent Electronic Component Team, Korea Institute of Ceramic Engineering and Technology) ;
  • Jeong, Young Hun (Intelligent Electronic Component Team, Korea Institute of Ceramic Engineering and Technology) ;
  • Yun, Ji Sun (Intelligent Electronic Component Team, Korea Institute of Ceramic Engineering and Technology) ;
  • Cho, Jeong Ho (Intelligent Electronic Component Team, Korea Institute of Ceramic Engineering and Technology) ;
  • Paik, Jong Hoo (Intelligent Electronic Component Team, Korea Institute of Ceramic Engineering and Technology) ;
  • Yoon, Jong-Won (Department of Advanced Materials Science and Engineering, Dankook University)
  • 이귀웅 (한국세라믹기술원 지능형전자부품팀) ;
  • 전창준 (한국세라믹기술원 지능형전자부품팀) ;
  • 정영훈 (한국세라믹기술원 지능형전자부품팀) ;
  • 윤지선 (한국세라믹기술원 지능형전자부품팀) ;
  • 조정호 (한국세라믹기술원 지능형전자부품팀) ;
  • 백종후 (한국세라믹기술원 지능형전자부품팀) ;
  • 윤종원 (단국대학교 신소재공학과)
  • Received : 2014.09.17
  • Accepted : 2014.11.24
  • Published : 2014.12.01
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Abstract

$[(Co_{1-x}Cu_x)_{0.2}(Ni_{0.3}Mn_{0.7})_{0.8}]_3O_4$ ($0{\leq}x{\leq}1$) thin films prepared by metal organic decomposition process were fabricated on SiN/Si substrate for infrared sensor application. Their structural and electrical properties were investigated with variation of Cu dopant. The $[(Co_{1-x}Cu_x)_{0.2}(Ni_{0.3}Mn_{0.7})_{0.8}]_3O_4$ (CCNMO) film annealed at $500^{\circ}C$ exhibited a dense microstructure and a homogeneous crystal structure with a cubic spinel phase. Their crystallinity was further enhanced with increasing doped Cu amount. The 120 nm-thick CCNMO (x=0.6) thin film had a low resistivity of $53{\Omega}{\cdot}cm$ at room temperature while the Co-free film (x=1) showed a significantly decreased resistivity of $5.9{\Omega}{\cdot}cm$. Furthermore, the negative temperature coefficient of resistance (NTCR) characteristics were lower than $-2%/^{\circ}C$ for all the specimens with $x{\geq}0.6$. These results imply that the CCNMO ($x{\geq}0.6$) thin films are a good candidate material for infrared sensor application.

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