• Title/Summary/Keyword: Mirror Like Surface

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A study on the mirror like machining of Al-Si alloy for extraction of Si particle (Al-Si합금의 Si석출 경면가공에 관한 연구)

  • 이은상;김정두
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.16 no.12
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    • pp.2279-2286
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    • 1992
  • A hypereutectic Aluminum-Silicon Alloy is widely used in the parts of autombile because of high-resistance and good strength. In this study, the cutting of a hypereutectic Al-Si alloy (A390) for extraction of Si particle was experimentally investigated. By proper selection of cutting tool materials and optimization of cutting conditions, economical machining of this alloy is achieved. The surface roughness relates closely with the feed rate and cutting speed.

GaN epitaxial growths on chemically and mechanically polished sapphire wafers grown by Bridgeman method (수평 Bridgeman법으로 성장된 사파이어기판 가공 및 GaN 박막성장)

  • 김근주;고재천
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.10 no.5
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    • pp.350-355
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    • 2000
  • The fabrication of sapphire wafer in C plane has been developed by horizontal Bridgeman method and GaN based semiconductor epitaxial growth has been carried out in metal organic chemical vapour deposition. The single crystalline ingot of sapphire has been utilized for 2 inch sapphire wafers and wafer slicing and lapping machines were designed. These several steps of lapping processes provided the mirror-like surface of sapphire wafer. The measurements of the surface flatness and the roughness were carried out by the atomic force microscope. The GaN thin film growth on the developed wafer was confirmed the wafer quality and applicability to blue light emitting devices.

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Study for polycrystalline 3C-SiC thin films growth by LPCVD (LPCVD에 의한 다결정 3C-SiC 결정성장에 관한 연구)

  • Kim, Kang-San;Chung, Gwiy-Sang
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1313-1314
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    • 2006
  • The polycrystalline 3C-SiC thin films heteroepitaxially grown by LPCVD method using single precursor 1,3-disilabutane at $850^{\circ}C$. The crystallinity of the 3C-SiC thin film was analyzed by XRD and FT-IR. Residual strain was investigated by Raman scattering. The surface morphology was also observed by AFM and voids or dislocations between SiC and $SiO_2$ were measured by SEM. The grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror, and low defect and strain. Therefore, the polycrystalline 3C-SiC is suitable for harsh environment MEMS applications.

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Growing of polycrystalline 3C-SiC thin films for harsh environment MEMS applications. (극한 환경 MEMS용 다결정 3C-SiC 박막의 성장)

  • Kim, Kang-San;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.408-409
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    • 2006
  • The polycrystalline 3C-SiC thin films heteroepitaxially grown by LPCVD method using single precursor 1. 3-disilabutane at $850^{\circ}C$. The crystallinity of the 3C-SiC thin film. was analyzed by XPS. Residual strain was investigated by Raman scattering. The surface morphology and voids between SiC and $SiO_2$ were measured by SEM. The grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror, and low defect and strain. Therefore, the polycrystalline 3C-SiC is suitable for harsh environment MEMS applications.

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Chip-scale Integration Technique for a Microelectromechnical System on a CMOS Circuit (CMOS 일체형 미세 기계전자시스템을 위한 집적화 공정 개발)

  • ;Michele Miller;Tomas G. Bifano
    • Journal of the Korean Society for Precision Engineering
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    • v.20 no.5
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    • pp.218-224
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    • 2003
  • This paper describes a novel MEMS integration technique on a CMOS chip. MEMS integration on CMOS circuit has many advantages in view of manufacturing cost and reliability. The surface topography of a CMOS chip from a commercial foundry has 0.9 ${\mu}{\textrm}{m}$ bumps due to the conformal coating on aluminum interconnect patterns, which are used for addressing each MEMS element individually. Therefore, it is necessary to achieve a flat mirror-like CMOS chip fer the microelectromechanical system (MEMS) such as micro mirror array. Such CMOS chip needs an additional thickness of the dielectric passivation layer to ease the subsequent planarization process. To overcome a temperature limit from the aluminum thermal degradation, this study uses RF sputtering of silicon nitride at low temperature and then polishes the CMOS chip together with the surrounding dummy pieces to define a polishing plane. Planarization reduces 0.9 ${\mu}{\textrm}{m}$ of the bumps to less than 25 nm.

Current Trends of Vibration-Assisted Machining in Micro/Nano Scales (초정밀 진동 보조 가공 연구 동향)

  • Lee, Moon-Gu;Jeon, Yong-Ho
    • Journal of the Korean Society for Precision Engineering
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    • v.29 no.8
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    • pp.834-839
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    • 2012
  • Recently, mechanical components with miniaturized size, complex shape and fine surface are on demand from industries such as mobile electronics, medical devices and defense. The size of them is smaller than several millimeters, the shape has micro-holes, curve, or multi-step and the surface is mirror-like. This features are not able to be machined with the conventional machining, therefore electro-discharge machining (EDM), cutting, and laser machining have been applied. If the technologies are assisted by vibration, high aspect ratio and good surface are to be achieved. In this paper, prior and current researches of vibration-assisted machining are reviewed. Machining mechanisms with vibration-assisting are explained, their effects are shown, and vibrating apparatuses are discussed. Especially, comparison between with and without vibration assisting is presented. This review shows the vibration-assisted machining is effectively fabricate the components with small and complicated shape and fine surface finish.

Measurement of the 3-Dimensional Shapes of Specular Objects by Using Double Pass Retroreflection (재귀반사 특성을 이용한 경면물체의 3차원 형상 측정)

  • Park, W.S.;Ryu, Y.K.;Cho, H.S.
    • Journal of the Korean Society for Precision Engineering
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    • v.13 no.11
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    • pp.64-72
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    • 1996
  • This paper is aimed to develop an optical method for measuring 3-dimensional shapes of specular objects having curved surfaces. The existing methods measuring the shapes of specular objects have several common disadvantages: they may not work properly if the surface is highly specular like mirror surface or if the reflectance property is not uniform over the surface. And, they often require the a priori knowledege about the surface reflectance. To overcome these disadvantages, the measurement using double pass retroreflection method is proposed in this paper. For this measurement principle, an experimental measuring system is designed and prepared which is composed of a galvanometer scanner, a beam splitter, a laser source, a CCD camera, and a reflector made of retroreflective material. To verify the effectiveness of the measurement system a series of experiments are performaed for various specular objects. The results observed from the experiments show that the developed optical sensing system can be an effective mean of measuring the 3-D shapes of specular objects.

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Design of 850 nm Vertical-Cavity Surface-Emitting Lasers by Using a Transfer Matrix Method (전달 행렬 방법을 이용한 850 nm수직 공진기 레이저 구조의 최적설계)

  • Kim Tae-Yong;Kim Sang-Bae
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.1
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    • pp.35-46
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    • 2004
  • In comparison with edge-emitting lasers(EELs), predicting the output power and slope efficiency of Vertical-Cavity Surface-Emitting Lasers(VCSELs) is very difficult due to the absorption loss in DBR layers. However, by using transfer matrix method(TMM), we've made possible to calculate such parameters of multi-layer structures like VCSELs. In this paper, we've calculated the threshold gain, threshold current and slope efficiency through the methodology based on TMM. Also TMM is the way of customizing the VCSEL structure for the desired threshold current and slope efficiency by changing the number of DBR mirror layers.

A Study on the Optimal Machining of 12 inch Wafer Polishing by Taguchi Method (다구찌 방법에 의한 12인치 웨이퍼 폴리싱의 가공특성에 관한 연구)

  • Choi, Woong-Kirl;Choi, Seung-Gun;Shin, Hyun-Jung;Lee, Eun-Sang
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.11 no.6
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    • pp.48-54
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    • 2012
  • In recent years, developments in the semiconductor and electronic industries have brought a rapid increase in the use of large size silicon. However, for many companies, it is hard to produce 400mm or 450mm wafers, because of excesive funds for exchange the equipments. Therefore, it is necessary to investigate 300mm wafer to obtain a better efficiency and a good property rate. Polishing is one of the important methods in manufacturing of Si wafers and in thinning of completed device wafers. This research investigated the surface characteristics that apply variable machining conditions and Taguchi Method was used to obtain more flexible and optimal condition. In this study, the machining conditions have head speed, oscillation speed and polishing time. By using optimum condition, it achieves a ultra precision mirror like surface.

다이아몬드 미세형상가공에서 자려진동의 발생경향과 안전성 평가

  • 이언주;임한석;안중환
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 1995.10a
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    • pp.71-74
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    • 1995
  • Diamond shaping is one of the machining strategies to make the optical micro-groove molds,and it is especially useful when rhe component is an assembly of the linear micro-groove array. A mirror-like surface and arbitrary crose-sectional curve can be easily made by diamond. Howerver, the cutting speed of shaping is relatively lower than that of the other cutting methods, and there exist an unstable cutting conditions that generate the chatter. This study is focused on the modeling of the simplified self-induced chatter of the diamond shapping. Form the chatter model and experiments, it is found that the unstable cutting conditions exist wwhen the depth of cut is low and cutting speed is high.

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