• 제목/요약/키워드: Miniaturize

검색결과 80건 처리시간 0.019초

Slot 구조를 이용한 920MHz 소형 RFID 리더 안테나 다구찌설계 연구 (The design of a 920MHz compact RFID reader antenna of slot structure using the Taguchi's Method)

  • 권소현;고재형;김형석
    • 한국정보통신설비학회:학술대회논문집
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    • 한국정보통신설비학회 2009년도 정보통신설비 학술대회
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    • pp.289-292
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    • 2009
  • In this paper, an optimum design center frequency proposes portable RFID reader antenna that is 920MHz frequency using the Taguchi's Method. Proposed antenna is cut corner of opposite angle and it's structure that have slots in four sides microstrip patch of a perfect square shape. This slot structure can miniaturize microstrip patch antenna and confirmed through an experiment that size of antenna about 18% decreases than structure that slot does not exist. Because compact antenna that have structure of slot changes according to complex design variables, analysis and experimental design for minimization of experiment number of times are required for optimum antenna design. In this research, designed antenna that have optimum structure when introduce and designs table of orthogonal arrays of the Taguchi's Method been experimental design that can minimize analysis and experiment number of times, achieve responsiveness analysis of main elements and analyzes the effect and minimizes design repeat with analysis result. Presented experiment result about antenna special quality that permittivity is 4.4 and manufactures to board of Epoxy 3.2T.

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끝이 단락된 결합선로를 이용한 전력 분배기의 초소형화 (A New Reduced-Sized Lumped Distributed Power Divider Using The Shorted Coupled-line Pair)

  • 강인호;최재교
    • 한국전자파학회:학술대회논문집
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    • 한국전자파학회 2003년도 종합학술발표회 논문집 Vol.13 No.1
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    • pp.283-287
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    • 2003
  • A new method to miniaturize ${\lambda}/4$ transmission line of power divider is proposed. The method utilizes simple combination of the shorted coupled-line pair instead of the transmission line with very high impedance and shunt lumped capacitors. The length of ${\lambda}/4$ transmission line of power divider is about 16% over the conventional power divider at 1 GHz.

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유비쿼터스 헬스케어를 위한 전기화학 바이오센서 (Electrochemical Biosensors for U-Healthcare)

  • 김상규;정봉현
    • 대한의용생체공학회:의공학회지
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    • 제29권5호
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    • pp.337-342
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    • 2008
  • To date, many researchers have developed a variety of biosensors to detect the biomolecular interactions. Recently, electrochemical biosensors have been attracting great interest as one of key technologies in a ubiquitous healthcare (U-healthcare) system since they are highly sensitive and feasible to miniaturize. Here we overview the current electrochemical biosensors based on strip-type, nanowire/nanotube, field effect transistor (FET), and nanogap electrode.

유전체 재료를 활용한 이동통신 필터 기술

  • 김준철;방규석;이형규
    • 한국전자파학회지:전자파기술
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    • 제12권3호
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    • pp.25-34
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    • 2001
  • 이동통신용 유전체 필터에 사용되는 유전체 재료 는 많이 상용화 되어 있다. 그러나 향후 IMT2000, BIuetooth. Wireless LAN등에 채용될 부품은 더욱 소형화로 여기에 필요한 새로운 유전체 재료가 요 구된다. 이러한 필터는 결국 적층 일체형 필터의 제작이 대두되고 이를 위해서는 높은 유전율에 높은 Q값을 갖는 저온소결(900˚C이하)재료가 필요하다. 본고에서는 저온소결이 가능한 BiNbO$_{4}$,재료를 갖고 설계, 적층공정 등을 통하여 적층일체형 필터를 제 작하였다.

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Flow-channel과 microsensor를 내장한 전해질 측정용 소형 카트리지 제작 (Fabricationof small size catridge for electrolyte measurement including flow-channel and microsensors)

  • 이영철;조병욱;김창수;고광락;손병기
    • 전자공학회논문지D
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    • 제35D권4호
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    • pp.78-83
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    • 1998
  • A small size cartrideg for FET type electrolyte sensor is designed and faricated with much simplified process by using micromachining tenchiques such as silicon etching andglass bonding. Size of the whole cartideg is 2.4cm*2.5cm, and the dead volume of a micro flow-channel in the cartrideg is only 8.5.mu.l. The photosensitive polymer(THB 30) is used to define a micropool and to encapsulate the sensor surface for standardizationof electrolyte sensors. To miniaturize micro flow-channel conventional reference electrode(Ag/AgCl) a differential amplification is introduced using REFET and quasi reference electrode. Refet was fabricated using photosensitive polymer(OMR 83). The fabricated cartridge with built-in pH-ISFET showed good operational characteristics such as linearity and high sensitivity (55.4mV/pH) in a wide pH range(pH2-pH12).

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전자식 주행안전 장치를 위한 각속도 센서 개발 (Development of Angular Rate Sensor for an Electronic Stability Program)

  • 김병우
    • 한국정밀공학회지
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    • 제24권10호
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    • pp.83-90
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    • 2007
  • The vehicle dynamic control system needs to detect the yaw rate of vehicle and a yaw rate sensor is required as a central component. Therefore, A sensor on the basic of the "tuning fork method" for automotive controls is being developed. The sensor was fabricated by the surface micro machining process to miniaturize its size. The sensor output offset is ${\pm}0.37^{\circ}/sec$ in the room temperature. The resonance frequency of the fabricated yaw rate sensor is measured to 5.29kHz for the drive mode. Tests of the sensor demonstrate that its performance is equivalent to that required for implementation of a yaw control system. Vehicle handling and safety are substantially improved using the sensor to implement yaw control.

기생소자를 갖는 PDA 단말기용 PIFA 설계 (Design of PIFA with a parasitic element for PDA terminal)

  • 김용호;이홍민
    • 한국전자파학회:학술대회논문집
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    • 한국전자파학회 2003년도 종합학술발표회 논문집 Vol.13 No.1
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    • pp.511-514
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    • 2003
  • In this paper, describes the design of PIFA for PDA which has parasitic patch to expand the impedance bandwidth and miniaturization technique to consider the radiation pattern. To expand the impedance bandwidth, generated resonant frequency of parasitic patch is different from that of main patch. To miniaturize the physical dimension, using the folded edge and rectangular slot. The obtained impedance bandwidth is 9.4% ($2.29GHz{\sim}2.515GHz$) at VSWR${\leqq}$2 and antenna gain is 2dBi within the operating frequency.

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ESD에 의한 반도체소자의 손상특성 (Damage and Failure Characteristics of Semiconductor Devices by ESD)

  • 김두현;김상렬
    • 한국안전학회지
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    • 제15권4호
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    • pp.62-68
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    • 2000
  • Static electricity in electronics manufacturing plants causes the economic loss, yet it is one of the least understood and least recognized effects haunting the industry today. Today's challenge in semiconductor devices is to achieve greater functional density pattern and to miniaturize electronic systems of being more fragile by electrostatic discharges(ESD) phenomena. As the use of automatic handling equipment for static-sensitive semiconductor components is rapidly increased, most manufacturers need to be more alert to the problem of ESD. One of the most common causes of electrostatic damage is the direct transfer of electrostatic charge from the human body or a charged material to the static-sensitive devices. To evaluate the ESD hazards by charged human body and devices, in this paper, characteristics of electrostatic attenuation in domestic semiconductor devices is investigated and the voltage to cause electronic component failures is investigated by field-induced charged device model(FCDM) tester. The FCDM simulator provides a fast and inexpensive test that faithfully represents ESD hazards in plants. Also the results obtained in this paper can be used for the prevention of semiconductor failure from ESD hazards.

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압전 바이모프의 타원운동을 이용한 정밀 이동기구 개발 (Development of precision Moving Mechanism using Ellipsoidal Motion of piezoelectric Bimorph)

  • 박한길;김준형;김수현;곽윤근
    • 한국정밀공학회지
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    • 제20권4호
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    • pp.151-157
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    • 2003
  • A new type of precision actuator is developed using piezoelectric bimorphs. This type of actuator is applicable for the flat surface or in-pipe system and can make forward and backward motion. Two bimorphs are linked serially and two different phased voltages are applied to each bimorph. Therefore, The end of the bimorph makes ellipsoidal motion. The device moves by the friction force between the rubber attached at the bimorph end and the inner surface of the pipe. As the results, the driving range of the device is about 0~18Hz and the device guarantees very high linearity at low frequency, 0~1 Hz. The maximum velocity of the device is about 6mm/s at 10Hz. The developed mechanism is very simple and use piezoelectric bimorph. So, it is possible to miniaturize and educe the power consumption.

Trench구조와 산화물 고유전체에 따른 Trench MIM Capacitor S-Parameter 해석 (S-Parameter Simulation for Trench Structure and Oxide High Dielectric of Trench MIM Capacitor)

  • 박정래;김구성
    • 반도체디스플레이기술학회지
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    • 제20권4호
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    • pp.167-170
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    • 2021
  • Integrated passive device (IPD) technology has emerged with the need for 5G. In order to integrate and miniaturize capacitors inside IPD, various studies are actively performed using high-k materials and trench structures. In this paper, an EM(Electromagnetic) simulation study was performed by applying an oxide dielectric to the capacitors having a various trench type structures. Commercially available materials HfO2, Al2O3, and Ta2O5 are applied to non, circle, trefoil, and quatrefoil type trench structures to confirm changes in each material or structure. As a result, the bigger the capacitor area and the higher dielectric constant of the oxide dielectric, the insertion loss tended to decrease.