• Journal of Power System Engineering
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• v.9 no.1
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• pp.64-69
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• 2005

In evaluation of electronic reliability on the PCB(Print Circuit Borad),electrochemical migration is one of main test objects. The phenomenon of electrochemical migration occurs in the environment of the hight humidity and the hight temperature under bias through a continuous aqueous electrolyte. In this paper, the generating mechanism of electrochemical migration is investigated by using water drop acceleration test under various waters. The waters used in the water drop test are city water, distilled water and ionic water. It found that the generated velocity of electrochemical migration depended on electrolyte quantity which included in the various waters.

• Journal of Applied Reliability
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• v.5 no.2
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• pp.261-272
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• 2005

In evaluation of electronic reliability on the PCB(Printed Circuit Board), electrochemical migration is one of main test objects. The phenomenon of electrochemical migration occurs In the environment of the high humidity and the high temperature under bias through a continuous aqueous electrolyte. In this paper, the generating mechanism of electrochemical migration is investigated by using water droll acceleration test under various waters. The waters used in the water drop test are city water, distilled water and ionic water. It found that the generated velocity of electrochemical migration depended on the temperature of water and the electrolyte quantity which included in the various waters.

• Proceedings of the Korean Reliability Society Conference
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• 2005.06a
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• pp.339-348
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• 2005

In evaluation of electronic reliability on the PCB(Printed Circuit Board),electrochemical migration is one of main test objects. The phenomenon of electrochemical migration occurs In the environment of the high humidity and the high temperature under bias through a continuous aqueous electrolyte. In this paper, the generating mechanism of electrochemical migration is investigated by using water drop acceleration test under various waters. The waters used in the water drop test are city water, distilled water and ionic water. It found that the generated velocity o of electrochemical migration depended on the temperature of water and the electrolyte quantity which included in the various waters.

• Korean Journal of Materials Research
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• v.15 no.1
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• pp.54-60
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• 2005

Recently a lots of problems have observed in high densified and high integrated electronic components. One of them is ion migration phenomena, which induce the electrical short of electrical circuit. ion migration phenomena has been observed in the field of exposing the specific environment and using for a long tin e. This study was evaluated the generation time of ion migration and was investigated properly test method through water drop test and high temperature high humidity test. Also we observed direct causes and confirmed generation mechanism of dendritic growth as we reproduced the ion migration phenomena. We utilized PCB(printed circuit board) having a comb pattern as follows 0.5, 1.0, 2.0 mm pattern distance. Cu, SnPb and Au were electroplated on the comb pattern. 6.5 V and 15 V were applied in the comb pattern and then we measured the electrical short time causing by ion migration. In these results, we examined a difference of ion migration time depending on pattern materials, applied voltage and pattern spacing of PCB conductor.

• Journal of the Korea Society of Computer and Information
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• v.25 no.5
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• pp.91-98
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• 2020

The mobile agent, which handles a given task while migrating between the sensor nodes, moves including the execution commands and task processing results. This increases the size of the mobile agent, causing the network to load, leading to the migration time delay and the loss of migration reliability. This paper presents the method of lightening the mobile agent using distributed object technology and the algorithm for exploring and providing the optimal migration path that is actively performed in the event of network traffic, and it proposes a method to ensure the reliability of the mobile agent migration by applying them. In addition, through the comparative analysis experiments based on agent size and network traffic for the migration time of mobile agent equipped with active rules in sensor network-based mobile agent middleware environment, applying the proposed methods proves to ensure the autonomy and migration reliability of the mobile agent.

• Journal of Applied Reliability
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• v.12 no.3
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• pp.153-163
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• 2012

Recently, as a electronic components are becoming more high-density, so that electronic circuits have smaller pitches between the leads and are more vulnerable to insulation failure. And the reliability of electric insulation has become an ever important issue as device contact pitches and print patterns shrink. Ion migration occurs in highly humid environment as voltage is applied to an installed print circuit. Under highly humid and voltage applied circumstances, electronic components respond to applied voltages by electrochemical ionization of metals, and a conducting filament forms between the anode and cathode across a nonmetallic medium. This leads to short-circuit failure of the electronic component. In thesis, we study acceleration test of ion migration in FR-4 PCB plated with Sn. Voltage applied test of FR-4 PCB circuits plated with Sn was tested in the temperature and humidity environments. As a result of this test, equation of acceleration model was derived.

• Proceedings of the Korean Reliability Society Conference
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• 2001.06a
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• pp.489-496
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• 2001

컴퓨터 키보드의 시장 불량품을 분석한 결과 여러 키가 동시에 입력되는 현상이 다수 발생되는 것을 알 수 있었다. 정밀분석결과 이의 원인이 키보드 membrane의 패턴을 구성하는 은(Ag) paste의 ion migration발생에 의한 것임을 알 수 있었다. 재현실험을 통해 고온 고습한 환경에서 장시간 사용하다보면 membrane내부로 수분이 침투하여 패턴간에 Ag ion migration이 발생되어 키 동작 오류를 유발시킴을 알 수 있었다. 이에 대한 대책안으로 제조 원가에 크게 영향을 주지 않으면서 migration을 크게 억제할 수 있는 준방수 방식의 membrane을 채택하여 4$0^{\circ}C$, 90%RH 환경에서 최소 5년을 보증할 수 있는 키보드를 제작하였다. 또한, 키보드 membrane의 ion migration 시험시 정상사용 조건을 가속시킬 수 있는 재현 및 검증시험법(85$^{\circ}C$, 85%RH, 가속계수 17배)을 개발하였다.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.138-142
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• 2019

As the NAND flash memory goes to 3D vertical Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) structure, the lateral charge migration can be critical in the reliability performance. Even more, with miniaturization of flash memory cell device, just a little movement of trapped charge can cause reliability problems. In this paper, we propose a method of predicting the trapped charge profile in the retention mode. Charge diffusivity in the charge trapping layer (Si₃N₄) was extracted experimentally, and the effect on the trapped charge profile was demonstrated by the simulation and experiment.

• Journal of the Korean Ceramic Society
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• v.46 no.2
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• pp.155-160
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• 2009

The reliability could be one of the essential properties for multilayer ceramic capacitor (MLCC) using in various electronic devices and the concentration and mobility of oxygen vacancy would play important role in the reliability. To investigate the migration behavior of oxygen vacancies, thermally stimulated depolarization current (TSDC) is adopted. In dielectric material of X5R MLCC, the TSD-Current peak observed around 150$^{\circ}C$ and 200$^{\circ}C$ which represented the migration of oxygen vacancy. Substituting Yttrium for Dysprosium in X5R MLCC showed higher migration activation energy and lower TSD current density.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.82-86
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• 2019

The reliability of 3D NAND flash memory cell is affected by the charge migration which can be divided into the vertical migration and the lateral migration. To clarify the difference of two migrations, the activation energy of the charge loss is extracted and compared in a conventional square device pattern and a new test pattern where the perimeter of the gate is exaggerated but the area is same. The charge loss is larger in the suggested test pattern and the activation energy is extracted to be 0.058 eV while the activation energy is 0.28 eV in the square pattern.