• 제목/요약/키워드: Migration reliability

검색결과 62건 처리시간 0.019초

PCB 전기적 신뢰성평가를 위한 이온 마이그레이션 가속시험 (Acceleration Test of Ion Migration for PCB Electronic Reliability Evaluation)

  • 이덕보;김정현;강수근;장석원;임재훈;유동수
    • 동력기계공학회지
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    • 제9권1호
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    • pp.64-69
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    • 2005
  • In evaluation of electronic reliability on the PCB(Print Circuit Borad),electrochemical migration is one of main test objects. The phenomenon of electrochemical migration occurs in the environment of the hight humidity and the hight temperature under bias through a continuous aqueous electrolyte. In this paper, the generating mechanism of electrochemical migration is investigated by using water drop acceleration test under various waters. The waters used in the water drop test are city water, distilled water and ionic water. It found that the generated velocity of electrochemical migration depended on electrolyte quantity which included in the various waters.

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이온 마이그레이션 발생에 대한 수분온도의 영향 (Effect of Water Temperature on Generation of Ion Migration)

  • 이덕보;김정현;강수근;김상도;장석원;임재훈;유동수
    • 한국신뢰성학회지:신뢰성응용연구
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    • 제5권2호
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    • pp.261-272
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    • 2005
  • In evaluation of electronic reliability on the PCB(Printed Circuit Board), electrochemical migration is one of main test objects. The phenomenon of electrochemical migration occurs In the environment of the high humidity and the high temperature under bias through a continuous aqueous electrolyte. In this paper, the generating mechanism of electrochemical migration is investigated by using water droll acceleration test under various waters. The waters used in the water drop test are city water, distilled water and ionic water. It found that the generated velocity of electrochemical migration depended on the temperature of water and the electrolyte quantity which included in the various waters.

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이온 마이그레이션 발생에 대한 수분온도의 영향 (Effect of Water Temperature on Generation of Ion Migration)

  • 이덕보;김정현;강수근;김상도;장석원;임재훈;유동수
    • 한국신뢰성학회:학술대회논문집
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    • 한국신뢰성학회 2005년도 학술발표대회 논문집
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    • pp.339-348
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    • 2005
  • In evaluation of electronic reliability on the PCB(Printed Circuit Board),electrochemical migration is one of main test objects. The phenomenon of electrochemical migration occurs In the environment of the high humidity and the high temperature under bias through a continuous aqueous electrolyte. In this paper, the generating mechanism of electrochemical migration is investigated by using water drop acceleration test under various waters. The waters used in the water drop test are city water, distilled water and ionic water. It found that the generated velocity o of electrochemical migration depended on the temperature of water and the electrolyte quantity which included in the various waters.

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PCB의 금속 이온 마이그레이션 현상에 관한 연구 (A Study on the Metallic ion Migration Phenomena of PCB)

  • 홍원식;강보철;송병석;김광배
    • 한국재료학회지
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    • 제15권1호
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    • pp.54-60
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    • 2005
  • Recently a lots of problems have observed in high densified and high integrated electronic components. One of them is ion migration phenomena, which induce the electrical short of electrical circuit. ion migration phenomena has been observed in the field of exposing the specific environment and using for a long tin e. This study was evaluated the generation time of ion migration and was investigated properly test method through water drop test and high temperature high humidity test. Also we observed direct causes and confirmed generation mechanism of dendritic growth as we reproduced the ion migration phenomena. We utilized PCB(printed circuit board) having a comb pattern as follows 0.5, 1.0, 2.0 mm pattern distance. Cu, SnPb and Au were electroplated on the comb pattern. 6.5 V and 15 V were applied in the comb pattern and then we measured the electrical short time causing by ion migration. In these results, we examined a difference of ion migration time depending on pattern materials, applied voltage and pattern spacing of PCB conductor.

Lightweight and Migration Optimization Algorithms for Reliability Assurance of Migration of the Mobile Agent

  • Lee, Yon-Sik
    • 한국컴퓨터정보학회논문지
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    • 제25권5호
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    • pp.91-98
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    • 2020
  • 이동성 객체인 이동에이전트는 이주 시 주어진 작업처리 명령들과 작업수행 결과 탑재에 의한 크기 증가로 인하여 네트워크의 부하를 유발함으로써 이주시간 지연 및 이주 신뢰성을 훼손한다. 본 논문에서는 분산객체 기술을 이용한 이동에이전트의 경량화 방법과 네트워크 트래픽 발생 시능동적으로 최적의 이주경로를 탐색 및 제공하는 알고리즘을 제시하고, 에이전트 이주 시 이들을 적용함으로써 이동에이전트의 이주 신뢰성을 보장하는 방법을 제안한다. 또한, 센서 네트워크 기반 이동에이전트 미들웨어 환경에서 능동규칙 탑재 이동에이전트의 이주시간에 대한 에이전트의 크기와 네트워크 트래픽 발생에 따른 비교 및 분석 실험을 통하여, 제안 방법 적용 시 이동에이전트의 자율성과 이주 신뢰성이 보장됨을 입증한다.

Sn 표면처리된 FR-4 재질 PCB에서의 이온마이그레이션 가속시험 (Acceleration Test of Ion Migration in FR-4 PCB Plated with Sn)

  • 황순미;정용백;김철희;이관훈
    • 한국신뢰성학회지:신뢰성응용연구
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    • 제12권3호
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    • pp.153-163
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    • 2012
  • Recently, as a electronic components are becoming more high-density, so that electronic circuits have smaller pitches between the leads and are more vulnerable to insulation failure. And the reliability of electric insulation has become an ever important issue as device contact pitches and print patterns shrink. Ion migration occurs in highly humid environment as voltage is applied to an installed print circuit. Under highly humid and voltage applied circumstances, electronic components respond to applied voltages by electrochemical ionization of metals, and a conducting filament forms between the anode and cathode across a nonmetallic medium. This leads to short-circuit failure of the electronic component. In thesis, we study acceleration test of ion migration in FR-4 PCB plated with Sn. Voltage applied test of FR-4 PCB circuits plated with Sn was tested in the temperature and humidity environments. As a result of this test, equation of acceleration model was derived.

키보드에서의 Ag Ion Migration 불량 개선사례 (Improving quality of keyboard by analyzing Ag ion migration)

  • 하종신;최완수;이성수;김영복
    • 한국신뢰성학회:학술대회논문집
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    • 한국신뢰성학회 2001년도 정기학술대회
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    • pp.489-496
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    • 2001
  • 컴퓨터 키보드의 시장 불량품을 분석한 결과 여러 키가 동시에 입력되는 현상이 다수 발생되는 것을 알 수 있었다. 정밀분석결과 이의 원인이 키보드 membrane의 패턴을 구성하는 은(Ag) paste의 ion migration발생에 의한 것임을 알 수 있었다. 재현실험을 통해 고온 고습한 환경에서 장시간 사용하다보면 membrane내부로 수분이 침투하여 패턴간에 Ag ion migration이 발생되어 키 동작 오류를 유발시킴을 알 수 있었다. 이에 대한 대책안으로 제조 원가에 크게 영향을 주지 않으면서 migration을 크게 억제할 수 있는 준방수 방식의 membrane을 채택하여 4$0^{\circ}C$, 90%RH 환경에서 최소 5년을 보증할 수 있는 키보드를 제작하였다. 또한, 키보드 membrane의 ion migration 시험시 정상사용 조건을 가속시킬 수 있는 재현 및 검증시험법(85$^{\circ}C$, 85%RH, 가속계수 17배)을 개발하였다.

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SONOS NAND 플래시 메모리 소자에서의 Lateral Charge Migration에 의한 소자 안정성 연구 (Reliability Analysis by Lateral Charge Migration in Charge Trapping Layer of SONOS NAND Flash Memory Devices)

  • 성재영;정준교;이가원
    • 반도체디스플레이기술학회지
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    • 제18권4호
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    • pp.138-142
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    • 2019
  • As the NAND flash memory goes to 3D vertical Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) structure, the lateral charge migration can be critical in the reliability performance. Even more, with miniaturization of flash memory cell device, just a little movement of trapped charge can cause reliability problems. In this paper, we propose a method of predicting the trapped charge profile in the retention mode. Charge diffusivity in the charge trapping layer (Si3N4) was extracted experimentally, and the effect on the trapped charge profile was demonstrated by the simulation and experiment.

TSDC 방법을 이용한 X5R MLCC의 신뢰성 평가 (Thermally Stimulated Depolarization Current Test for Reliability of X5R MLCC)

  • 박지영;박재성;김영태;허강헌
    • 한국세라믹학회지
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    • 제46권2호
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    • pp.155-160
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    • 2009
  • The reliability could be one of the essential properties for multilayer ceramic capacitor (MLCC) using in various electronic devices and the concentration and mobility of oxygen vacancy would play important role in the reliability. To investigate the migration behavior of oxygen vacancies, thermally stimulated depolarization current (TSDC) is adopted. In dielectric material of X5R MLCC, the TSD-Current peak observed around 150$^{\circ}C$ and 200$^{\circ}C$ which represented the migration of oxygen vacancy. Substituting Yttrium for Dysprosium in X5R MLCC showed higher migration activation energy and lower TSD current density.

3차원 플래시 메모리의 전하 손실 원인 규명을 위한 Activation Energy 분석 (Study on the Activation Energy of Charge Migration for 3D NAND Flash Memory Application)

  • 양희훈;성재영;이휘연;정준교;이가원
    • 반도체디스플레이기술학회지
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    • 제18권2호
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    • pp.82-86
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    • 2019
  • The reliability of 3D NAND flash memory cell is affected by the charge migration which can be divided into the vertical migration and the lateral migration. To clarify the difference of two migrations, the activation energy of the charge loss is extracted and compared in a conventional square device pattern and a new test pattern where the perimeter of the gate is exaggerated but the area is same. The charge loss is larger in the suggested test pattern and the activation energy is extracted to be 0.058 eV while the activation energy is 0.28 eV in the square pattern.