• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.2
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• pp.100-104
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• 2000

Diamond film was deposited on Si substrate by using microwave plasma-enhanced chemical vapor deposition (MPECVD) system. After thinning the cross section between diamond film and Si substrate by ion milling method, we investigated its interface via transmission electron microscopy We could observe that the diamond film was grown either directly on Si substrate or via the interlayer between diamond film and Si substrate. Thickness of the interlayer was varied along the cross section. The interlayer might mainly composed of Sic andlor amorphous carbon. We could observe the well-developed electron diffraction pattern of both Si and diamond around the interface. Based on this result, we can conjecture the initial growth behavior of diamond film on Si substrate.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.1A
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• pp.77-83
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• 2004

Parallel coupled microstrip bandpass filter is widely used in microwave circuits. But this filter limits the filter applications because of the narrow bandwidth and the spurious passband at twice the basic passband frequency. In order to solve this problem, a method of the asymmetrical coupled microstrip lines on composite dielectric substrate is presented. Closed form method is used to analyze the asymmetrical coupled microstrip lines on composite dielectric substrate. An experimental filter is fabricated over $33\%$ bandwidth centered at 9GHz. Compared with the filter on a single substrate, this filter on composite substrate shows improvement of the spurious passband.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.9
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• pp.686-689
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• 2013

The carbon nanowall (CNW) is a carbon-based nanomaterials and it was constructed with vertical structure graphenes and it has the highest surface density among carbon-based nanostructures. In this study, we have checked the growth properties of CNW according to the substrate angle. Microwave plasma enhanced chemical vapor deposition (PECVD) system was used to grow CNW on Si substrate with methane ($CH_4$) and hydrogen ($H_2$) gases. And, we have changed the substrate angle from $0^{\circ}$ to $90^{\circ}$ in steps of $30^{\circ}$. The planar and vertical conditions of the grown CNWs according to the substrate angle were characterized by a field emission scanning electron microscopy (FE-SEM) and energy dispersive spectroscopy (EDS). In case of the growth angle increases, our experimental results showed that the length of the CNW was shortened and the content of carbon component was decreased.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.112-114
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• 1999

Superconducting multiplexer consisting of hairpin type filters has been designed for the reduction of the physical size of the device. Pulsed laser deposition with a Nd:YAG laser has been used to grow high quality YBCO superconducting films on MgO substrates. Multiplexer has been designed to have the center frequencies at 13.6 CHz and 13.9 GHz on MgO substrate with the size of 20 ${\times}$ 20 ${\times}$ 0.5mm$^3$. It is possible to implement superconducting multiplexer having two passbands on the limited 20 ${\times}$ 20 ${\times}$ 0.5mm$^3$ MgO substrate by adopting hairpin type filters. This type of superconducting device will be useful for the integration of microwave subsystem.

• Journal of Surface Science and Engineering
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• v.29 no.5
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• pp.549-555
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• 1996

Diamond Like Carbon film is amorphous film which is considered to consist of three coordinate graphite structure and tetrahedron coordinate diamond structure. Its hardness, thermal conductivity and chemical stability are nearly to one of diamond. It is well known to become semi-conductor by doping of inpurity. In this study Diamond Like Carbon film was synthesized by Microwave Plasma CVD in the gas mixture of hydrogen-methan-nitrogen and doped of nitrogen on the single-crystal silicon or silica glass. The temperature of substrate and nitrogen concentration in the gas mixture had an effect on the bonding state, structural properties and conduction mechanism. The surface morphology was observed by Scanning Electron Microscope. The strucure was analyzed by laser Raman spectrometry. The bonding state was evaluated by electron spectroscopy. Diamond Like Carbon film synthesized was amorphous carbon containing the $sp^2$ and $sp^3$ carbon cluster. The number of $sp^2$ bonding increased as nitrogen concentration increased from 0 to 40 vol% in the feed gas at 1233K substrate temperature and at $7.4\times10^3$ Pa. Increase of nitrogen concentration made Diamond Like Carbon to be amorphous and the doze of nitragen could be controlled by nitrogen concentration of feed gas.

• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1055-1061
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• 1999

Indium Tin Oxide (ITO) films were fabricated by vacuum deposition technique and their microwave shielding properties were investigated for the application to the transparent shield material. The vacuum coating was conducted in a RF co-sputtering machine. The film composition and structure associated with the sputtering conditions (argon and oxygen pressure. substrate temperature. RF input power) were investigated for the attainment of high electrical conductivity and good transparency. The electrical conductivity of IT0 films fabricated under the optimum deposition conditions (substrate temperature : $300^{\circ}C$. Ar flow rate : 20 sccm, Oxygen flow rate : 10 sccm, In/Sn input power : 50/30 W) showed 5.6$\times10^4$mho/m. The optical transparency is also considerably good. The microwave shielding properties including the dominant shielding mechanism are investigated from the electrical conductivity, thickness and skin depth of the ITO films. The total shielding effectiveness is then estimated to be 26 dB, which provides a suggestion that the IT0 films can be effectively used as the transparent shield material.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.645-648
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• 1998

We used a three-dimensional inductance extraction program, Fasthenry for optimal design of the spiral inductors on silicon substrate. The inductance and quality factor of the spiral inductors with various design parameters were calculated so that the optimal parameter value was determined. The spiral inductors then were fabricated using different foundary processes and were measured using the network analyzer and microwave probes. The pad and other parasitics of measurement system were de-embedded using the y-parameter calibration technique. the inductors fabricated using the LG 0.8um process and HP 0.5um process showed the quality factor of 5.8 and 3, respectively. Finally the equivalent circuit farameters of the spiral inductors on silicon substrate were extracted from the measurement data using the matlab.

• Journal of the Korean Ceramic Society
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• v.41 no.12 s.271
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• pp.880-883
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• 2004

Carbon nanofibers could be selectively formed at the groove area of the MgO substrate using microwave plasma-enhanced chemical vapor deposition system. Iridium metal was used as a catalyst layer for the formation of the carbon nanofibers. The growth direction of the carbon nanofibers was vertical to the substrate surface. The selectively grown iridium-catalyzed carbon nanofibers show around $1.8V/{\mu}m$ turn-on voltage and $1.0\;mA/cm^2$ field emission current density at $2.65\;V/{\mu}m$ in the field emission measurement.

• The Korean Journal of Ceramics
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• v.2 no.4
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• pp.184-187
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• 1996

Diamod nucleation by mw assisted CVD was examined various conditions namely, (1) diamond nucleation on variour substrate materials, such as Si, cubic BN, pyrolytic BN and AIN, (2) AST(Activated species transport) method which promote nucleation of diamond on single crystal and polycrystalline alumina substrate was developed. (3) Effect of bias enhancement of nucleation on single crystalline Si was examined, and finally (4) DST (Double step treatment) method was developed to enhance diamond nucleation on Ni. In this method, we separated carbon diffusing process into Ni, carbon precipitating process from the inside of Ni and diamond precipitation process.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.1
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• pp.92-99
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• 1994

Diamond thin film was deposited on n type (100) Si substrate by MPECVD(Microwave plasma Enhanced Chemical Vapor Deposition). For the increase in nucleation density of diamond, Si substrate was pretreated by diamond powder or negative bias voltage was applied to the substrate during the initial deposition. In the case of retreated Si substrate, the diamond thin film quality was enhanced with increasing the total pressure in the range of 20~150 Torr. For the negative bias voltage, the formation condition of the diamond was seriously affected by $CH_4$ concentration and total pressure. The formation condition will be discussed with electrical current of substrate generated by plasma ions which depend on $CH_4$concentration, bias voltage, and total pressure.