• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1523-1525
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• 2003

Due to the rapid development of wireless networking system, researches on the communication devices are mainly focus on microwave frequency devices such as filters, resonators, and phase shifters. Among them, Film bulk acoustic resonator (FBAR) has been paid extensive attentions for their high performance. In this research, ZnO thin films were deposited by RF-magnetron sputtering on Al/$SiO_2$/Si wafer and then crystalline properties and surface morphology were examined. To measure crystalline structure and surface morphology X-ray diffraction (XRD) and Scanning Electron Microscope (SEM) were employed. It was showed that crystalline properties of ZnO thin films were strongly dependant on the deposition conditions. As increasing the deposition temperature and the deposition pressures, the peak intensities of ZnO(002) plane were increased until $300^{\circ}C$, then decreased rapidly. At the sputtering conditions of RF power of 213 W and working pressure of 15 m Torr, ZnO film had excellent c-axis orientation, surface morphology, and adhesion to the substrate. In conclusion we optimized smooth surface with very small grains as well as highly c-axis oriented ZnO film for FBAR applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.310-310
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• 2007

Mg-Si-O계 세라믹스에 glass frit 조성을 첨가하여 저온에서의 소결 특성 및 마이크로파 유전 특성을 연구하였다. 기존의 Mg-Si-O계 세라믹스는 우수한 유전특성을 가지고 있으나 높은 소결온도로 인하여 LTCC용 기판 소재로 적용이 어려웠다. 본 연구에서는 MgO, $SiO_2$를 이용하여 $Mg_2SiO_4$을 합성한 후, $B_2O_3-ZnO-Na_2O-SiO_2-Al_2O_3$계 glass 조성을 20~40wt%로 첨가하여 소결온도를 감소시켜 LTCC 기판 소재로서의 적용성을 고찰하였다. glass frit 함량이 증가함에 따라 밀도($g/cm^3$) 및 유전율(${\varepsilon}_r$)은 증가하였고 품질계수($Qxf_0$)값은 감소하였다. glass frit 함량이 40wt%일때 $900^{\circ}C$에서 1시간 소결한 소결체의 유전톡성은 유전율 (${\varepsilon}_4$) = 6.5. 품질계수 ($Qxf_0$) = 4,000(GHz), 온도계수 $(\tau_t)\;=\;{\pm}\;10ppm/^{\circ}C$로 우수한 특성을 확인하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.332-335
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• 2004

Boron Phosphide films were deposited on(III) Si substrate at $650^{\circ}C$, by the reaction of $B_2H_6$ with $PH_3$ using CVD. $N_2$ was employed as carrier gas. The optimal gas rates were 20 ml/min for $B_2H_6$, 60 ml/min for $PH_3$ ml/min and $1{\ell}/min$ for $N_2$. The films were annealed for 1hour in $N_2$ ambient at $550^{\circ}C$ and measured. The measurement of AFM shows that the average surface roughness is each $10.108{\AA}$ and $29.626{\AA}$. So, we could know every commonplace thing. The measurement of XRD shows that the films have the preferred orientation of(1 0 1). From SEM images, we could see that Boron Phosphide is showed of a structure, which is grain size, which is grain boundary size. Also, the measurement of AES is shown the films have $B_{13}P_2$ Stoichiometry. From WDX See that ingredient is detected each Boron and Phosporus. So, we could see that deposited BP thin film. In this study, we obtained the BP thin film by deposited in atmosphere pressure, and known to applicate as microwave absorbtion material of BP thin film.

• Journal of radiological science and technology
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• v.27 no.2
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• pp.45-50
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• 2004

Synthesis diamond films have been deposited on the molybdenum substrates using an microwave plasma enhanced chemical vapor deposition method. The effects of deposition time, surface morphology, infrared transmittance and Raman scattering have been studied. Diamond deposited on molybdenum substrate for 100 hours by MW plasma CVD from $CH_4-H_2-O_2$ gas mixture had good crystallity with $100[{\mu}m]$ thickness needed for radiation detector. Diamond radiation detector of M-I-M type was made and the current of radiation detector was increased by increasing X-ray dose.

• The Journal of Korean Institute of Information Technology
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• v.17 no.3
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• pp.43-50
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• 2019

In this paper, we propose a S-band oscillator with a reduced electrical size by applying a vertical split ring resonator(VSRR). The VSRR is a type of split ring resonator that operates as a resonator by the capacitance and inductance generated between the microstrip lines arranged on the top and bottom of the dielectric substrate and it has an advantage that the electrical size of the resonance circuit can be reduced as compared with the conventional ring resonator. In this paper, we design a VSRR operating over S-band and an oscillator using the VSRR as the resonant circuit. The proposed oscillator showed the output of 5.9dBm at 2.4HGz and showed the phase noise characteristics of -112.58dBc at 100KHz offset frequency and -117.85dBc at 1MHz offset.

• The Journal of the Korea institute of electronic communication sciences
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• v.17 no.5
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• pp.759-766
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• 2022

In this paper, we propose a multi-band small antenna with CPW(Coplanar Waveguide) feeding structure WLAN(Wireless Local Area Network) and WiMAX (Worldwide Interoperability for Microwave Access) bands. The proposed antenna is designed two slit in the modified monopole type radiator and FR-4 substrate, which is thickness 1.0 mm, and the dielectric constant is 4.4. The size of proposed antenna is 15.1 mm⨯16.41 mm, and total size of proposed antenna is 17.5 mm⨯16.4 mm. From the fabrication and measurement results, From the fabrication and measurement results, bandwidths of 439 MHz (2.06 to 2.499 GHz), 840 MHz (3.31 to 4.25) and 1,315 MHz (5.23 to 6.545 GHz) were obtained on the basis of -10 dB impedance bandwidth. Also, 3D radiation pattern characteristics of the proposed antenna are displayed and measured gains 2.24 dBi, 2.83 dBi, and 2.0 dBi shown in the three frequency band, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.397-404
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• 2009

Effects of ceramic filler types and dose on the low temperature sintering and dielectric properties of ceramic/$CaO-Al_2O_3-SiO_2$ (CAS) glass composites were investigated. All of the specimens were sintered at $850{\sim}900^{\circ}C$ for 2 h, which conditions are required by the low-temperature co-firing ceramic (LTCC) technology. Ceramic fillers of $CaCO_3$, $Al_2O_3$, $CaCO_3-Al_2O_3$ mixture, and $CaCO_3-Al_2O_3$ compound ($CaAl_2O_4$), respectively, were used. The addition of $Al_2O_3$ yielded the crystalline phase of alumina, which was associated with the inhibition of sintering, while, $CaCO_3$ resulted in no apparent crystalline phase but the swelling was significant. The additions of $CaCO_3-Al_2O_3$ mixture and $CaAl_2O_4$, respectively, yielded the crystalline phases of alumina and anorthite, and the sintering properties of both composites increased with the increase of filler addition and the sintering temperature. In addition, the $CaAl_2O_4$/CAS glass composite, sintered at $900^{\circ}C$, demonstrated good microwave dielectric properties. In overall, all the investigated fillers of 10 wt% addition, except $CaCO_3$, yielded reasonable sintering (relative density, over 93 %) and low dielectric constant (less than 5.5), demonstrating the feasibility of the investigated composites for the application of the LTCC substrate materials.

• Journal of the Korean Electrochemical Society
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• v.8 no.3
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• pp.139-145
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• 2005

[ $SnO_x$ ] films on the flexible substrate of PET film were prepared at ambient temperature under a $(CH_3)_4Sn(TMT: tetra-methyl tin)-H_2-O_2$ atmosphere in order to obtain transparent conductive polymer by using ECR-MOCVD(Electro Cyclotron Resonance Metal Organic Chemical Yfpor Deposition) system. The prepared $SnO_x$ thin films show generally over $90\%$ of optical transmittance at wavelength range of 380-780nm and about $1\times10^{-2\~3}ohm{\cdot}cm$ of electrical resistivity. In the present study, effects of $O_2/TMT\;and\;H_2/TMT$ mole ratio on the properties of $SnO_x$ films are investigated and the other process parameters such as microwave power, magnetic current power, substrate distance and working pressure are fixed. Based on our experimental results, the $SnO_x$ film composition ratio of Sn and O directly influences on the electrical and optical properties of the films prepared. The $SnO_x$ film with low electric resistivity and high transmittance could be obtained by controlling the process parameters such as $O_2/TMT\;and\;H_2/TMT$ mole ratio, which play an important role to change the composition ratio between Sn and O. An increase of $O_2/TMT$ mole ratio brought on the increases 0 content in the $SnO_x$ film. On the other hand, an increase of $H_2/TMT$ mole ratio lead to decreases the oxygen content in the film. The optimized composition ratio of oxygen : tin Is determined as 2.4: 1 at $O_2/TMT$ of 80 and $H_2/TMT$ of 40 mole ratio, respectively.

• Food Science and Biotechnology
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• v.17 no.1
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• pp.161-165
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• 2008

The trypsin inhibitor activities (TIA) of various potato cultivars were evaluated by measuring the inhibition of trypsin inhibitor activity using N-benzoyl-DL-arginine-p-nitroanilide (BAPNA) as substrate. The TIA values of 5 potato cultivars (1.99 to 2.88 mg/g) were significantly different among cultivars (p<0.05). When the TIA values of commercially processed potatoes were determined, no TIA was detected. During cooking, the $IT_{50}$ (time required to reach 50% inhibition of TIA) values were decreased as heating temperature and time increased. The ITso of moist heating was estimated to be 0.34 min at $100^{\circ}C$, whereas for deep-fat frying the $IT_{50}$ was 0.13 min at $180^{\circ}C$ and 5.28 min for oven baking at $100^{\circ}C$. The $IT_{50}$ value of microwave cooking was 0.194 min at medium heat, and which was similar to that of pressure cooking at $120^{\circ}C$ (0.185 min). Moreover, there was a negative relationship between temperature (${\geq}80^{\circ}C$) and $IT_{50}$ values ($R^2=0.99$, p<0.01). The TIA of potato was completely inactivated by moist heating at $100^{\circ}C$ within 5 min, whereas the pressure cooking at $120^{\circ}C$ and deep-fat frying at $180^{\circ}C$ within 60 and 30 sec, respectively. Based on our results, deep-fat frying is the most effective cooking method to reduce TIA in potatoes.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.11
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• pp.1-8
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• 2011

One of the most important parameters that limit maximum output power of transistor is breakdown. InAlAs/InGaAs/GaAs Metamorphic HEMTs (MHEMTs) have some advantages, especially for cost, compared with InP-based ones. However, GaAs-based MHEMTs and InP-based HEMTs are limited by lower breakdown voltage for output power even though they have good microwave and millimeter-wave frequency performance with lower minimum noise figure. In this paper, InAlAs/$In_xGa_{1-x}As$/GaAs MHEMTs are simulated and analyzed for breakdown. The parameters affecting breakdown are investigated in the fabricated 0.1-${\mu}m$ ${\Gamma}$-gate MHEMT device having the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ heterostructure on the GaAs wafer using the hydrodynamic transport model of a 2D commercial device simulator. The impact ionization and gate field effect in the fabricated device including deep-level traps are analyzed for breakdown. In addition, Indium mole-fraction-dependent impact ionization rates are proposed empirically for $In_{0.52}Al_{0.48}As/In_xGa_{1-x}As$/GaAs MHEMTs.