• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.353-353
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• 2008

Carbon nanotubes (CNTs) are attractive for field emitter because of their outstanding electrical, mechanical, and chemical properties. Several applications using CNTs as field emitters have been demonstrated such as field emission display (FED), backlight unit (BLU), and X-ray source. In this study, we fabricated a CNT cathode using transparent ultra-thin CNT film. First, CNT aqueous solution was prepared by ultrasonically dispersing purified single-walled carbon nanotubes (SWCNTs) in deionized water with sodium dodecyl sulfate (SDS). To obtain the CNT film, the CNT solution in a milliliter or even several tens of micro-litters was deposited onto a porous alumina membrane through vacuum filtration process. Thereafter, the alumina membrane was solvated by the 3 M NaOH solution and the floating CNT film was easily transferred to an indium-tin-oxide (ITO) glass substrate of $0.5\times0.5cm^2$ with a film mask. The transmittance of as-prepared ultra-thin CNT films measured by UV-Vis spectrophotometer was 68~97%, depending on the amount of CNTs dispersed in an aqueous solution. Roller activation, which is a essential process to improve the field emission characteristics of CNT films, increased the UV-Vis transmittance up to 93~98%. This study presents SEM morphology of CNT emitters and their field emission properties according to the concentration of CNTs in an aqueous solutions. Since the ultra-thin CNT emitters prepared from the solutions show a high peak current density of field emission comparable to that of the paste-base CNT emitters and do not contain outgassing sources such as organic binders, they are considered to be very promising for small-size-but-high-end applications including X-ray sources and microwave power amplifiers.

• Journal of the Korean Chemical Society
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• v.45 no.4
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• pp.351-356
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• 2001

Planarization of the free-standing diamond film surface as smooth as possible could be obtained by using the hydrogen plasma etching with the diffusion of the carbon species into the metal alloy (Fe, Cr, Ni). For this process, we placed the free-standing diamond film between the metal alloy and the Mo substrate like a metal-diamond-molybdenum (MDM) sandwich. We set the sandwich-type MDM in a microwave-plasma-enhanced chemical vapor deposition (MPECVD) system. The sandwich-type MDM was heated over ca. 1000 $^{\circ}C$ by using the hydrogen plasma. We call this process as the hydrogen plasma etching with carbon diffusion process. After etching the free-standing diamond film surface, we investigated surface roughness, morphologies, and the incorporated impurities on the etched diamond film surface. Finally, we suggest that the hydrogen plasma etching with carbon diffusion process is an adequate etching technique for the fabrication of the diamond film surface applicable to electronic devices.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.2
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• pp.301-306
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• 2015

An ultra-compact and wideband low noise amplifier (LNA) in a quad flat non-leaded (QFN) package is presented. The LNA monolithic microwave integrated circuit (MMIC) is implemented in a $0.25{\mu}m$ GaN IC technology on a Silicon Carbide (SiC) substrate provided by Triquint. A source degeneration inductor and a gate inductor are used to obtain the noise and input matching simultaneously. The resistive feedback and inductor peaking techniques are employed to achieve a wideband characteristic. The LNA chip is mounted in the $3{\times}3-mm^2$ QFN package and measured. The supply voltages for the first and second stages are 14 V and 7 V, respectively, and the total current is 70 mA. The highest gain is 13.5 dB around the mid-band, and -3 dB frequencies are observed at 0.7 and 12 GHz. Input and output return losses ($S_{11}$ and $S_{22}$) of less than -10 dB measure from 1 to 12 GHz; there is an absolute bandwidth of 11 GHz and a fractional bandwidth of 169%. Across the bandwidth, the noise figures (NFs) are between 3 and 5 dB, while the output-referred third-order intercept points (OIP3s) are between 26 and 28 dBm. The overall chip size with all bonding pads is $1.1{\times}0.9mm^2$. To the best of our knowledge, this LNA shows the best figure-of-merit (FoM) compared with other published GaN LNAs with the same gate length.

• Korean Journal of Materials Research
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• v.8 no.11
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• pp.1067-1073
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• 1998

High quality diamond films of the silicon on diamond (SOD) structure are deposited using CO and $H_2$ gas mixture in microwave plasma chemical vapor deposition (CVD), a SOD structure is fabricated using low pressure CVD polysilicon on diamond/ Si(100) substrate. The crystalline structure of the diamond films which composed of { 111} and {100} planes. were changed from octahedral one to cubo-octahedron one as the CO/$H_2$ ratios are increased. The high quality diamond films without amorphous carbon and non-diamond elements were deposited at the CO/$H_2$ flow rate of 0.18. and the main phase of the diamond films shows (111) plane. The diamond/Si(lOO) structure shows that the interface is flat without voids. The measured dielectric constant. leakage current and breakdown field were $5.31\times10^{-9}A/cm^2$ and $9\times{10^7}{\Omega}cm$ respectively.

• The Journal of the Korea institute of electronic communication sciences
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• v.6 no.5
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• pp.611-620
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• 2011

A planar monopole antenna that was developed for WLAN/WiMAX application is presented in this paper. The proposed antenna with three strips, an asymmetrical ground plane, and a rectangular slit in the ground is designed to cover the popular frequency spectrum of WLAN (wireless local area network) bands and WiMAX (Worldwide Interoperability for Microwave Access) bands. The proposed antenna, which is capable of wideband operation, is fed by a strip line and fabricated on an FR-4 substrate. The obtained numerical results agree well with the experiment data. It was validated that the configuration can meet the demands for the WLAN/WiMAX systems and effectively enhanced the impedance bandwidth to 9.95% for the lower band and 76.05% for the upper band for VSWR < 1 : 2. This paper also presents and discusses the 2D radiation patterns and 3D gains according to the results of the experiment.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.9
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• pp.1642-1648
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• 2017

Ultra-wideband antennas are desired for several applications including satellite communications, radars, remote sensing system, telescopes, and microwave imaging systems. There are many types of wideband antenna structures, but the tapered slot Vivaldi antenna is advantageous in terms of cost, weight, scan angle capabilities, end-fire radiation, and ease of feeding and system integration. In this paper, a modified antipodal Vivaldi antenna is presented. A novel AVA with H-shaped parasitic patches has the capacity to improve the radiation characteristics in the whole operation frequencies. A prototype of the modified antenna with RT/duroid 5880 substrate of a relative dielectric constant (${\epsilon}_r$) of 2.2, and a thickness of 31mil is fabricated and experimentally studied as well. It measures a ${\mid}S_{11}{\mid}$ of less than -10dB and gain of 9-12dBi over 7.8-52.5GHz which shows reasonable agreement with the simulated one.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.33 no.2A
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• pp.167-173
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• 2008

In this paper, the flexible narrow bandpass filters (BPFs) with ${\lambda}$g/4 short and ${\lambda}$g/2 open stubs by microstrip line on duroid substrate are suggested. These BPFs with narrow bandwidth show flexible bandwidth with variation of the position of the stubs using the Qe (external quality factor) without changing the impedance value at microwave range. On the other hand, by replacing the series quarter-wavelength connecting lines with the equivalent T-shaped line of bandstop filter(BSF), the compact stub bandpass filter with harmonics suppression can be realized. The BPF with ${\lambda}$g/4 short stubs shows the insertion loss of 2.1 dB and the return loss of 18 dB and BPF with ${\lambda}$g/2 open stubs shows the insertion loss of 1.2 dB and the return loss of 21.9 dB at the center frequency of 5.8 GHz and the bandwidth of 10 %.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.37 no.1
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• pp.70-78
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• 2000

In applying high-${\underline{T_c}}$ superconducting material to microwave devices, Uncertainty of electromagnetics of high-${\underline{T_c}}$ superconductor(HTS) and the temperature dependence of the substrate fits with HTS thin film cause difficulty in realization of such antenna for industrial applications. It must be noted to characteristic the HTS antenna in contrast with normal conducting counterpart for this real application. In this paper, a comparative study between HTS microstrip antennas and gold antennas was reported in terms of the return loss, the characteristic impedance, efficiency, and other various characteristics. HTS thin films were $YBa_2Cu_3O_{7-x}$ (YBCO) on MgO substrates. Superconducting microstrip antennas used in this work were to directly inset a microstrip transmission line into the 50 ${\Omega}$ region of the radiating patch. Measurement results of HTS antennas and gold antennas showed that usable antennas can be made using this architecture.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.34 no.11A
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• pp.918-923
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• 2009

In this paper, a design method of the compact narrow band filter on the microstrip board is proposed using complementary split-ring resonators(CSRRs). The design technique of this filter is based on cascading filter stages consisting of the combination of circular CSRRs, capacitive gaps between patches, and inductive grounded stubs with the meander configuration. By these means, it was possible to get the nearly symmetric frequency responses, adjustable bandwidths, compact sizes. And also excellent characteristic of the out-of-band rejection is achieved in contrast to the conventional filter design technique. The measured insertion shows good results about -4.0dB at the center frequency($f_0=1GHz$) and passband return loss is less than -9.4dB. The 3dB fractional bandwidth(FBW) is approximately 4%. The results of the frequency response measured on the fabricated band pass filter substrate show satisfactory agreement with the simulated frequency responses by the HFSS in the region of interest.

• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.715-723
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• 2006

Perovskite oxide materials are very important for the electronics industry, because they exhibit promising properties. With an interest in the obvious applications, significant effort has been invested in the growth of highly crystalline epitaxial perovskite oxide thin films in our laboratory. And the desired structure of films was formed to achieve excellent properties. $Y_1Ba_2Cu_3O_{7-x}$ (YBCO) superconducting thin films were simultaneously deposited on both sides of 3 inch wafer by inverted cylindrical sputtering. Values of microwave surface resistance R$_2$ (75 K, 145 GHz, 0 T) smaller than 100 m$\Omega$ were reached over the whole area of YBCO thin films by pre-seeded a self-template layer. For implementation of voltage tunable high-quality varactor, A tri-layer structured SrTiO$_3$ (STO) thin films with different tetragonal distortion degree was prepared in order to simultaneously achieve a large relative capacitance change and a small dielectric loss. Highly a-axis textured $Ba_{0.65}Sr_{0.35}TiO_3$ (BST65/35) thin films was grown on Pt/Ti/SiO$_2$/Si substrate for monolithic bolometers by introducing $Ba_{0.65}Sr_{0.35}RuO_3$ (BSR65/35) thin films as buffer layer. With the buffer layer, the leakage current density of BST65/35 thin films were greatly reduced, and the pyroelectric coefficient of $7.6\times10_{-7}$ C $cm^{-2}$ $K^{-1}$ was achieved at 6 V/$\mu$m bias and room temperature.