• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.370.1-370.1
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• 2014

Giant magnetoresistance (GMR), tunneling magnetoresistance (TMR), and magnetic random-access memory (MRAM) are currently active areas of research. Magnetite, Fe3O4, is predicted to possess as half-metallic nature, ~100% spin polarization (P), and has a high Curie temperature (TC~850 K). On the other hand, Spinel ferrite CoFe2O4 has been widely studies for various applications such as magnetorestrictive sensors, microwave devices, biomolecular drug delivery, and electronic devices, due to its large magnetocrystalline anisotropy, chemical stability, and unique nonlinear spin-wave properties. Here we have investigated the magneto-transport properties of epitaxial CoxFe3-xO4 thin films. The epitaxial CoxFe3-xO4 (x=0; 0.4; 0.6; 1) thin films were successfully grown on MgO (100) substrate by molecular beam epitaxy (MBE). The quality of the films during growth was monitored by reflection high electron energy diffraction (RHEED). From temperature dependent resistivity measurement, we observed that the Werwey transition (1st order metal-insulator transition) temperature increased with increasing x and the resistivity of film also increased with the increasing x up to $1.6{\Omega}-cm$ for x=1. The magnetoresistance (MR) was measured with magnetic field applied perpendicular to film. A negative transverse MR was disappeared with x=0.6 and 1. Anomalous Hall data will be discussed.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.7 s.349
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• pp.156-161
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• 2006

In this paper, an E-patch antenna on the U-shaped ground plane is designed and experimental studied. In order to reduce to cross-polarization level and to enhance the gain of the microstrip patch antenna, a U-shaped ground plane is employed in the microstrip patch antenna. As a main radiator, an E-shaped patch is used to reduce the antenna size as small as possible. Also to enhance the bandwidth of the antenna, a substrate of the lowest permittivity of which thickness as thick as possible is used and a rectangular patch is overlaid on the air substrate of the E-shaped patch antenna. The radiation characteristics of the antenna are calculated by CST Microwave Studio 5.0 simulation software. Experimental results show that by increasing the height of the sidewall of the ground plane, the antenna gain is increased and the cross-polarization level is decreased.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.11 s.114
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• pp.1105-1111
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• 2006

In this paper, using low-temperature co-fired ceramic(LTCC) based system-in-package(SiP) technology, a very compact power amplifier LTCC module was designed, fabricated, and then characterized for 60 GHz wireless transmitter applications. In order to reduce the interconnection loss between a LTCC board and power amplifier monolithic microwave integrated circuits(MMIC), bond-wire transitions were optimized and high-isolated module structure was proposed to integrate the power amplifier MMIC into LTCC board. In the case of wire-bonding transition, a matching circuit was designed on the LTCC substrate and interconnection space between wires was optimized in terms of their angle. In addition, the wire-bonding structure of coplanar waveguide type was used to reduce radiation of EM-fields due to interconnection discontinuity. For high-isolated module structure, DC bias lines were fully embedded into the LTCC substrate and shielded with vias. Using 5-layer LTCC dielectrics, the power amplifier LTCC module was fabricated and its size is $4.6{\times}4.9{\times}0.5mm^3$. The fabricated module shows the gain of 10 dB and the output power of 11 dBm at P1dB compression point from 60 to 65 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.1
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• pp.44-50
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• 2004

In this paper, a DBM(Doubly Balanced Mixer) of 2 GHz is implemented on FR4 substrate. The structure of doubly balanced mixer requires, in general, two batons and a quad diode. For balun, a novel planar balun using microstrip to CPS is suggested and designed. The suggested balun shows the phase imbalance of 180$^{\circ}$${\pm}$ 1.5$^{\circ}$and the amplitude imbalance of ${\pm}$ 0.2 ㏈ for 1.5 to 2.5 GHz. Using the balun, DBM is succesfully implemented, and the measured conversion loss of up/down converter show about 6 ㏈ over the bandwidth. The balun may be applicable for MMIC DBM with the process supporting backside via thourgh more study.

• Journal of the Korean Magnetics Society
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• v.4 no.3
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• pp.214-218
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• 1994

$Y_{3}Fe_{5}O_{12}$ based garnet films(thin or thick) offer a great promise for the application of microwave communication components. We investigated the magnetic and crystallographic preperties of $Y_{3}Fe_{5}O_{12}$ thick films prepared by KrF eximer laser ablation of a stoichiometric garnet target. It was possible to obtain almost epitaxially oriented films on $Al_{2}O_{3}$(1102) plane. Although the crystalline quality depends on substrate temperature and $O_{2}$ partial pressure used($Po_{2}$), 4.1m thick films of $4{\pi}M_{s}=1300$ Gauss and $H_{c}=37.5$ Oe were obtained at the substrate temperature of $700^{\circ}C$ with the $Po_{2}$ of 100 mTorr after annealing the as-deposited films at $700^{\circ}C$ for 2 hours. These films are expected to be used for magnetostatic spin wave filters at narrow bandwidth frequency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.3
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• pp.406-409
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• 2012

The classical electromagnetically-induced transparency(EIT)-like switching in metamaterial was experimentally and theoretically demonstrated in the microwave-frequency region. The metamaterial unit cell consists of two identical split-ring resonators, which are arranged on both sides of a dielectric substrate with asymmetry. It is found that the classical EIT-like switching can be achieved by changing the polarization of the incident electromagnetic wave. The results of this study are promising for practical applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.429-429
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• 2012

To investigate the gettering effect of B-doped n-type monocrystalline silicon wafer, we made the p-n junction by diffusing boron into n-type monocrystalline Si substrate and then oxidized the boron doped n-type monocrystalline silicon wafer by in-situ wet and dry oxidation. After oxidation, the minority carrier lifetime was measured by using microwave photoconductance and the sheet resistance by 4-point probe, respectively. The junction depth was analyzed by Secondary Ion Mass Spectrometry (SIMS). Boron diffusion reduced the metal impurities in the bulk of silicon wafer and increased the minority carrier lifetime. In the case of wet oxidation, the sheet resistance value of ${\sim}46{\Omega}/{\Box}$ was obtained at $900^{\circ}C$, depostion time 50 min, and drive-in time 10 min. Uniformity was ~7% at $925^{\circ}C$, deposition time 30 min, and drive-in time 10 min. Finally, the minority carrier lifetime was shown to be increased from $3.3{\mu}s$ for bare wafer to $21.6{\mu}s$ for $900^{\circ}C$, deposition 40 min, and drive-in 10 min condition. In the case of dry oxidation, for the condition of 50 min deposition, 10 min drive-in, and O2 flow of 2000 SCCM, the minority carrier lifetime of 16.3us, the sheet resistance of ${\sim}48{\Omega}/{\Box}$, and uniformity of 2% were measured.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.10
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• pp.59-64
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• 2008

In this paper an adjustable linear gain equalizer which is operated from 6GHz to 18GHz in order to apply wideband RF circuit System is proposed and fabricated on $Al_2O_3$ substrate using thin film process. An adjustable linear gain equalizer is proposed to T type circuit and designed to aim on variable slope $-7dB{\sim}-13dB$ using the PIN Diode

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.7
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• pp.1211-1217
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• 2000

The three-dimensional finite-difference time-domain (FDTD) method and the two-dimensional quasi-static formulation have been used to calculate the characteristic impedance and the microwave effective index of coplanar waveguide structures on Lithium Niobate ($LiNBO_3$) single crystal substrates with a yttria-stabilized zirconia (YSZ) or $SiO_2$ buffer layer. The results shown can be a good source to predict the modulator characteristics. The effects of the thin buffer layer and anisotropy of the $LiNBO_3$ crystal (x-cut and z-cut) are discussed. The comparison between the FDTD and quasi-static results shows good agreement. In this paper, the efficient modeling technique of the FDTD method for the coplanar waveguide (CPW) structures based on an anisotropic substrate with a thin buffer layer is developed.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.180-180
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• 2016

보론이 도핑된 $3{\times}3cm$ 크기의 p 형 다결정 실리콘 기판의 표면을 경면연마한 후, 다이아몬드 입자의 seeding을 위해 슬러리 중 다이아몬드 분말의 입도를 5 nm로 고정하고 초음파 전처리 공정을 진행한 후, 다이아몬드 박막을 증착하였다. 다이아몬드 증착은 Microwave Plasma Chemical Vapor Deposition 장비를 이용하였으며, 공정 조건은 초기 진공 $10{\times}10^{-3}Torr$, 공정 가스 비율 $Ar:CH_4=200:2$, 가스 유량 202 sccm, 공정압력 90 Torr, 마이크로웨이브 파워 600 W, 기판 온도 $600^{\circ}C$이었다. 기판에 DC bias 전압을 인가하는 것을 공정 변수로 하여 0, -50, -100, -150, -200 V로 변화시켜가며, 0.5, 1, 2, 4 h 동안 증착을 진행하였다. 주사전자현미경과 XRD, AFM, 접촉각 측정 장비를 이용하여 증착된 다이아몬드 입자와 막의 특성을 분석하였다. 각 bias 조건에서 초기에는 다이아몬드 입자가 형성되어 성장되었다가 시간이 증가될수록 연속적인 다이아몬드 막이 형성되었다. Table 1은 각 bias 조건에서 증착 시간을 4 h까지 변화시키면서 얻은 다이아몬드 입자 또는 박막의 높이(두께)를 나타낸 것이다. 2 h까지의 공정 초기에는 bias 조건의 영향을 파악하기 어려운데, 이는 bias에 의한 과도한 이온포격으로 입자가 박막으로의 성장에 저해를 받는 것으로 사료된다. 증착시간이 4 h가 경과하면서 -150 V 조건에서 가장 두꺼운 막이 성장되었다. 이는 기판 표면을 덮은 다이아몬드 박막 위에서 이차 핵생성이 bias에 의해 촉진되기 때문으로 해석된다. -200 V의 조건에서는 오히려 막의 성장이 더 느렸는데, 이는 Fig. 1에 보이듯이 과도한 이온포격으로 Si/diamond 계면에서 기공이 형성된 것과 연관이 있는 것으로 보인다.