• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1440-1441
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• 2006

In this study, we synthesized CNTs(carbon nanotubes) on the glass substrate by microwave plasma enhanced chemical vapor deposition (MPECVD), Effect of bias voltage on the grown behavior and morphology of CNTs were investigated. Recently, it has been proposed that aligned CNTs can also be achieved by the application of electric bias to the substrate during growth, the first time reported the bias effect such that the nanotube alignment occurred only when a positive bias was applied to the substrate whereas no aligned growth occurred under a negative bias and no tube growth was observed without bias. On the country, several researchers reported some different observations that aligned nanotubes could also be grown under negative substrate biases. This discrepancy as for the effect of positive and negative bias may indicate that the bias effect is not fully understood yet. The glass and Si wafers were first deposited with TiN buffer layer by r.f sputtering method, and then Ni catalyst same method, The thickness of TiN and Ni layer were 200 nm and 60 nm, respectively. The main process parameters include the substrate bias (0 to - 300 V), and deposition pressure (8 to 20 torr).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.6
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• pp.311-316
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• 2002

Two different approaches, namely two-step deposition process and Bias-Enhanced Nucleation (BEN) technique have been examined for deposition of high quality diamond thin film on polycrystalline Ni which has low chemical activity with the carbon neutrals provided from the $CH_4/H_2$mixtures. A two-step deposition process, consisted of pre-deposition of soot layer at lower temperatures and subsequent deposition at higher temperature condition, has been developed to deposit diamond layer directly on Ni substrate. Diamond particles were observed after deposition step at $925^{\circ}C$ for 5 hours and those particles seem to be nucleated from the soot layer pre-deposited at lower temperatures ($810^{\circ}C$). Diamond particles of a substantial size were found on Ni substrate after biasing -220 V for 10 minutes and subsequent deposition for 2 hours while no diamond particles were observed under the conditions without applied bias.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.9
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• pp.961-966
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• 2003

Bowtie shaped meander slot antenna with harmonic suppression is designed and demonstrated experimentally. A substrate with height of 0.508 mm and relative permittivity of 2.5 is used, and the fundamental resonant frequency is 5.536 GHz. With thin conductor line in the antenna, harmonic suppression characteristic is obtained, and return losses at the 2nd and 3rd harmonic frequencies are -0.56 dB and -1.9 dB, respectively. Also, bowtie shape is applied to the antenna design for bandwidth enhancement, and the resulting bandwidth is 3.7 %, which is about three times wider than the reported meander slot antenna with harmonic suppression$\^$[1],[2]/.

• Journal of Electrical Engineering and Technology
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• v.10 no.5
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• pp.2120-2125
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• 2015

In this paper, a rectangular waveguide probe with a ridge-loaded straight slot (RLSS) is presented for a near-field scanning microwave microscope (NSMM). The RLSS is located laterally at the end wall of the cavity and is loaded on double ridges in a narrow straight slot to improve the spatial resolution compared with a straight slot. The probe consists of a rectangular cavity with an RLSS and a feed section of a WR-90 rectangular waveguide. When the proposed NSMM is located at distance of 0.1mm in front of a substrate without patches or strips, the simulated full width at half maximum (FWHM) of the probe improve by approximately 31.5 % compared with that of a straight slot without ridges. One dimensional scanning of the E-plane on a sample under test was conducted, and the reflection coefficient of the near-field scanning probe is presented.

• Journal of Electrochemical Science and Technology
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• v.11 no.2
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• pp.180-186
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• 2020

In this work, a metal-ligand solution (Cu-EDTA) was prepared based on the molecular precursor method and the solution was spin-coated onto 3D printed flexible photosensitive resin sheets. After being processed by microwave, a laser with a wavelength of 355 nm was utilized to scan the spin-coated sheets and then the sheets were immersed in an electroless copper plating solution to deposit copper wires. With the help of microwave processing, the adhesion between copper wires and substrate was improved which should result from the increase of roughness, decrease of contact angle and the consistent orientation of coated film according to the results of 3D profilometer and SEM. XPS results showed that copper seeds formed after laser scanning. Using the 3D printed flexible sheets as cathode and galvanized iron as anode, electrochemical machining was conducted.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.288-291
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• 2002

An alkoxide-based sol-gel method was used to fabricate $(Pb_{x},Sr_{1-x})$TiO3 (PST) thin films on a Pt/Ti/SiO2/Si substrate, and the dielectric properties of the PST thin films were investigated as a function of the Pb/Sr composition for use in tunable microwave device applications. The dielectric properties of the PST films were strongly dependent on the Pb/Sr ratio. The dielectric constant and dielectric loss of the PST films increased with increasing Pb content, and the figure of merit (FOM) reached a maximum value of 27.5 at a Pb/Sr ratio of 4:6. The tunability increased with increasing Pb content. The dielectric constant, loss factor, and tunability of PST (50/50) thin films were 404, 0.023, and 51.73%, respectively. From the result, the PST films with good dielectric properties are useful candidates for tunable microwave device.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.2 no.3
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• pp.275-282
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• 1998

In this paper, we designed and fabricated 5-stage microwave solid state power amplifier using balanced amplifier scheme for X-band electronic radar reflector. The used substrate is FR4 and the used active devices are FHX35LC, FLK012WF and FLK022WG. The circuit design and optimization had been carried out through the microwave CAD program CNL2 The measured values show 46dB in gain, input return loss -14.2dB, output return loss -16.6dB and IM3 is 32dBc at designed bandwidth. The measured results are almost agreed with the simulated values.

• Textile Coloration and Finishing
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• v.21 no.3
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• pp.19-25
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• 2009

Polymerization of tetraethoxysilane on a glass substrate was investigated by remote microwave plasma using argon with portions of nitrous oxide as carrier gas. Transparent layer like a thickness of 0.5 ${\mu}m$ 3 ${\mu}m$ were obtained, differing in chemical composition, depending on plasma power and treatment time as well as on ageing time. In general the milder the treatment and the shorter the ageing was, the higher was the content of organic structural elements in the layer. We have identified that the chemical structure of our samples composed of mainly Si O and Si C groups containing aliphatics, carbonyl groups. These results were obtained by X ray photon spectroscopy, Fourier transformed infrared spectroscopy, and scanning electron microscope combined with Energy dispersive X ray spectroscopy.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.142-142
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• 2003

The effects of film thickness on the dipolar relaxation of ferroelectric PbTiO$_3$ films were investigated in the microwave-frequency range. The dielectric constants ($\varepsilon$) and the dielectric losses (tan $\delta$) were successfully measured up to 30 ㎓ using interdigital capacitors. The PbTiO$_3$ thin films were deposited on the quartz substrate at room temperature and postannealed in oxygen atmosphere. As the film thickness increased, its grain size and tetragonality were enhanced. And the dipolar relaxation behavior began to appear in the thin films with approximately 20 nm thickness, since ferroelectric domains could not be formed hi small grains. The observed relaxation frequency (above 10 ㎓) was higher than the previous values reported in bulk ceramics. It can be correlated with the extremely small domain size of the thinfilms as shown by TEM. And, the Rayleigh constant [1] from domain wall motions was alsoinvestigated by LCR meter at 100 KHz.

• Korean Journal of Materials Research
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• v.13 no.7
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• pp.415-419
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• 2003

Carbon nanotubes were formed on silicon substrate using microwave plasma-enhanced chemical vapor deposition method. The possibility of carbon nanotubes formation was related to the thickness of nickel catalyst. The growth behavior of carbon nanotubes under the identical thickness of nickel catalyst was strongly dependent on the magnitude of the applied bias voltage. High negative bias voltage (-400 V) gave the vertically well-aligned carbon nanotubes. The vertically well-aligned carbon nanotubes have the multi-walled structure with nickel catalyst at the end position of the nanotubes.