• 한국신재생에너지학회:학술대회논문집
• /
• 2009.06a
• /
• pp.486-490
• /
• 2009

In order to investigate the offshore wind resources, the "QuikSCAT Level 3" data by the QuikSCAT satellite was analyzed from Jan 2000 to Dec 2008. QuikSCAT satellite is a specialized device for a microwave scatterometer that measures near-surface wind speed and direction under all weather and cloud conditions. Wind speed measured at 10 m above from the sea surface as extrapolated to the hub height by using the power law model. It has been found that the high wind energy prevailing in the south sea and the east sea of the Korean peninsula. From the limitation of seawater depth for piling the tower and archipelagic environment around the south sea, the west and the south-west sea are favorable to construct the large scale wind farm. Wind map and monthly variation of wind speed are investigate at the positions.

• Journal of the Optical Society of Korea
• /
• v.20 no.2
• /
• pp.321-324
• /
• 2016

Transformation optics methodology provides a new pathway for designing novel devices. It is based on changing a material’s permittivity and permeability. A design for changing the appearance of an object by transformation optics methodology is proposed here. Through a certain transformation, the relations of the metric spaces and the calculation of the material parameters are derived, and the aim of changing the apparent size of an object can be realized. Full wave simulations are performed to validate the proposed device’s performance. It is possible to think that the methodology will improve the flexibility of designing interesting applications in microwave and optical regimes.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.15 no.4
• /
• pp.501-505
• /
• 2015

In this paper, we demonstrated a 4W power amplifier monolithic microwave integrated circuit (MMIC) for Ku-band satellite communication applications. The used device technology relies on $0.25{\mu}m$ GaAs pseudomorphic high electron mobility transistor (PHEMT) process. The 4W power amplifier MMIC has linear gain of over 30 dB and saturated output power of over 36.1 dBm in the frequency range of 13.75 GHz ~ 14.5 GHz. Power added efficiency (PAE) is over 30 %.

• Journal of Industrial Technology
• /
• v.13
• /
• pp.25-31
• /
• 1993

This paper presents an analysis of microwave device component. An H-Plane waveguide component with arbitrary shape is analyzed using finite element method(FEM) cooperated with boundary element method(BEM). The finite element method(FEM) is applied to the junction region and the boundary element method(BEM) to the waveguide region. For the application of BEM in the waveguide structure, a ray representation of the waveguide Green's function is used. The proposed technique was applied to the analysis of the waveguide inductive junction to compare the numerical result with the result of the mode matching technique. The comparison showed good agreements between the two results. Transmitted powers were also computed in T-junction waveguides for the various shape of the junction area.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.366-370
• /
• 2002

GaAs has become a very popular material for the fabrication of high frequency, low noise and microwave power devices. GaAs devices are also well suited for high temperature operation because of the large band gap of this material. The standard GaAs technology and device structures have to be modified for stable operation at high temperature. In this paper, AlGaAs/GaAs HBT considering stable ohmic contact at high temperature as well as thermal effect such as self-heating effect are introduced. All the data obtained study will be used as input data for the simulator and the result will be compared with an analytical model available in this study,

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.22 no.4
• /
• pp.66-71
• /
• 1985

A MOSFET with multigates arrayed in periodic structure is studied as a transit time device for microwave amplification. The interactions between the periodic metal gates and the slow wave on the surface of the semiconductor can be observed in the vicinity of synchronism. The stability and the reciprocity of the active quadrupole are shown depending on the frequency and velocity of the carriers.

• ETRI Journal
• /
• v.17 no.2
• /
• pp.11-19
• /
• 1995

The plasma densities generated from a semiconductor bridge (SCB) device employing a capacitor discharge firing set have been measured by a novel diagnostic technique employing a microwave resonator probe. The spatial resolution of the probe is comparable to the separation between the two wires of the transmission lines (${\approx}$3 mm). This method is superior to Langmuir probes in this application because Langmuir probe measurements are affected by sheath effects, small bridge area, and unknown fraction of multiple ions. Measured electron densities are related to the land material and input energy. Although electron densities in the plasma generated by aluminum or tungsten-land SCB devices show a general tendency to increase steadily with power, at the higher energies, the electron densities generated from tungsten-land SCB devices are found to remain constant.

• Proceedings of the IEEK Conference
• /
• 2001.06b
• /
• pp.189-192
• /
• 2001

We have studied fabrication processes that form asymmetric $\Gamma$-gate with a 0.1${\mu}{\textrm}{m}$ gate length in MMIC's(Monolithic Microwave Integrated Circuits). Asymmetric $\Gamma$-gate was fabricated using mixture of PMMA and MCB. Thus pseudomorphic high electron mobility transistor (PHEMT's) with 0.1${\mu}{\textrm}{m}$ gate length was fabricated via several steps such as mesa isolation, metalization, recess, passivation. PHEMT's has the -1.75 V of pinch-off voltage (Vp), 63 mA of drain saturation current(Idss and 363.6 mS/mm of maximum transconductance (Gm) in DC characteristics and current gain cut-off frequency of 106 GHz and maximum frequency of oscillation of 160 GHz in RF characteristics.

• Korean Journal of Optics and Photonics
• /
• v.15 no.3
• /
• pp.274-277
• /
• 2004

An integrated photonic radio frequency (RF) phase shifter has been proposed and fabricated using a nested dual Mach-Zehnder modulator configuration in a new electro-optic polymer. The fabricated device shows a continuous voltage control of the RF signal phase. A near-linear phase shift exceeding 108$^{\circ}$was obtained for a 16-GHz microwave signal by tuning the do control voltage over a 7.8- $V_{pp}$ range.e.

• Proceedings of the KIEE Conference
• /
• 1997.11a
• /
• pp.288-290
• /
• 1997

Pulsed laser ablation has been used to fabricate superconducting $YBa_2Cu_3O_{7-x}$(YBCO) thin films on MgO substrates. The epitaxial YBCO thin films were grown at $750^{\circ}C$ and oxygen partial pressure of 200 mTorr. The electrical property and the characteristics of the YBCO thin films have been studied by R-T measurement. scanning electron microscopy (SEM) and X-ray diffraction (XRD). A microstrip line resonator has been fabricated using YBCO superconducting thin films by photolithography and wet-etch process. The resonator has linear microstrip line separated by a gap of 0.278 mm. We observed a fundamental resonance peak at the frequency of 10.007 GHz.