• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권11호
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• pp.538-543
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• 2006

A high-Power continuous-wave (CW) ten-vane double-strapped magnetron oscillator has been investigated using three-dimensional (3D) particle-in-cell (PIC) numerical simulation code, MAGIC3D. The resonant modes and their resonant frequencies of the ten-vane strapped magnetron resonator were obtained to show a large mode separation near the ${\pi}$-mode. An electron cloud formed in an anode-cathode gap, called an interaction space was confined well enough to result in no leakage current. Five spokes were clearly observed in the electron cloud, which definitely ensured the ${\pi}$-mode oscillation in the ten-vane magnetron. Numerical simulations predicted that the saturated microwave output power measured at the coaxial output port was 5.41 kW at the microwave frequency of 893 MHz, corresponding to a power conversion efficiency of 72.6% when the external axial magnetic field was 1150 gauss and the electron beam voltage and current were 6 kV and 1.25 A, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.189-189
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• 1998

• 한국진공학회:학술대회논문집
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• 한국진공학회 2003년도 제25회 학술발표회 초록집
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• pp.204-204
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• 2003

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 E
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• pp.1850-1851
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• 1998

Using the "MAGIC" code, computer simulation is performed to design a cathode structure which provides a radial distribution of electron beam density matching the field distribution of the $TM_{05}$ mode. Thus, very narrow band $TM_{05}$ mode microwave radiation can be generated in an open end waveguide. The simulation results show that the vircator can indeed be operated at the selected frequency 10.2GHz with a very narrow bandwidth(${\Delta}{\omega}/{\omega}$ < 1%).

• Journal of Korean Vacuum Science & Technology
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• 제3권1호
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• pp.38-42
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• 1999

Using the LOCOS process, we have fabricated the lateral type polysilicon field emission triodes with poly-Si/oxide/Si structure and investigated their current-voltage characteristics for three biasing modes of operation. The fabricated devices exhibit excellent electrical performances such as a relatively low turn-on anode voltage of 14 V at VGC = 0V, a stable and high emission current of 92${\mu}$A/triode over 90 hours, a small gate leakage current of 0.23 ${\mu}$A/triode and an outstanding transconductance of 57${\mu}$S/5triodes at VGC = 5V and VAC = 26V. these superior electrical operation is believed to be due to a large field enhancement effect, which is related to the sharp cathode tips produced by the LOCOS process as well as the high aspect ratio (height /radius ) of the cathode tip end.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.95-95
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• 2012

스터퍼링 기술이 1852년 Grove에 의해서 최초 발견되어 1979년 Chapin에 의해서 planar magnetron cathode 개발로 진공코팅기술의 새로운 영역을 열게 되어 현재까지 디스플레이, 반도체, 태양전지, 광학산업 및 전자부품 등 나노 산업에 필수적으로 적용되고 있다. 스퍼터링 입자는 운동량 전달에 의한 것으로 운동량을 갖는 나노 스퍼터링 입자는 기판에 대한 박막의 부착력이 우수하고 대면적에 균일하고 재현성 있게 성막되는 특징을 갖고 있다. 마그네트론 스퍼터링 기술이 산업에 응용되면서 주로 4분야에서 많은 연구, 개발이 되어져 왔다. 첫째는 타겟의 고순도 및 고밀도화와 더불어 가격이 고가로 됨에 따라 타겟 사용효율의 향상이다. 플라즈마를 발생시키는 캐소드의 자기회로를 1차원, 2차원 및 회전운동을 통해서 사용효율을 향상시키고 있다. 둘째는 기판에 대해서 박막특성이 균일하도록 코팅하는 것이다. 디스플레이에서는 글래스 기판이 대면적으로 됨에 따라서 핸들링이 어려워져 여러 개의 캐소드 자기회로를 선형적으로 이동시켜 박막두께분포를 최적화하며 반응성 가스를 사용해서 균일한 특성의 박막을 제작하는 경우에는 가스분사관과 배기펌프계의 기하학적 위치 및 가스 유동학적 해석이 필요하다. 셋째는 스퍼터링 입자의 이온화로 의한 박막의 특성향상과 반도체 trench의 높은 aspect ratio hole을 채우는 것이다. 이온화 방법으로는 inductively coupled plasma (ICP), microwave amplified (MA), high power impulse (HIPI), hollow cathode magnetron (HCM), self-sustained sputtering 등이 사용되어져 왔으며 최근에는(neutral beam-assisted sputtering (NBAS)에 의한 박막특성향상 방법이 발표되고 있다. 넷째는 플라즈마 및 박막두께 시뮬레이션에 대해서 많은 발표가 되고 있다. 본 발표에서는 상기의 4 분야를 포함한 향후 개발방향에 대해서 소개할 예정이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.205-208
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• 2001

Steady state and transient thermal analysis has been done by a finite element method in a diode of 12kV blocking voltage for microwave oven. The diode was fabricated by soldering ten pieces of 1200V diodes in series, capping a dummy wafer at the far end of diode series, and finally copper wire bonded for building anode and cathode terminal. In order to achieve high voltage and reliability, the edge of each diode was beveled and passivated by resin and epoxy with a thickness of $25{\mu}m$ and $3700{\mu}m$, respectively. The chip size, thickness and material properties were very important factor for high voltage diode package. And also, thermal stress value was highest in the edge of diode and solder. So, design of edge in silicon was very important to thermal stress.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.205-208
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• 2001

Steady state and transient thermal analysis has been done by a finite element method in a diode of 12kV blocking voltage for microwave oven. The diode was fabricated by soldering ten pieces of 1200V diodes in series, capping a dummy wafer at the far end of diode series, and finally copper wire bonded for building anode and cathode terminal. In order to achieve high voltage and reliability, the edge of each diode was beveled and passivated by resin and epoxy with a thickness of 25$\mu\textrm{m}$ and 3,700$\mu\textrm{m}$, respectively. The chip size, thickness and material properties were very important factor for high voltage diode package. And also, thermal stress value was highest in the edge of diode and solder. So, design of edge in silicon was very important to thermal stress.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.182.2-182.2
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• 2016

Hollow cathode discharge(중공 음극)는 음극 표면에서 발생되는 2차 전자를 이용하여 높은 밀도의 플라즈마를 만들 수 있는 장점이 있다. 전원으로 microwave, RF, DC, pulsed dc등을 사용할 수 있으며 박막의 증착, 식각 등에 응용 가능하다. 물리적 현상으로는 중공 음극 재료 표면 물질의 가열 및 이온 스퍼터링, 2차 전자의 가열, 자기장 인가 구조의 경우 전자 거동이 있다. PIC(particle-in-cell)방식의 모델링과 fluid model을 이용한 방법이 있는데 본 연구에서는 상용 fluid model software인 ESI사의 CFD-ACE+를 사용하여 모델링 하였다. 구동 주파수는 13.56 MHz의 상용 고주파 전원과 보다 낮은 1 MHz, 100 kHz의 수치 모델을 이용하여 HF, MF, LF 영역에서의 동작 특성을 해석하였다. 1차적으로는 가스 유동의 특성을 2D, 3D로 조사하였고 플라즈마 거동은 2차원을 주로 진행하였으며 계산 시간이 오래 거리는 3차원 모델을 하나 만들어 그 특성을 조사하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.31.1-31.1
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• 2009

Carbon nanotubes (CNTs) are attractive material because of their superior electrical, mechanical, and chemical properties. Furthermore, their geometric features such as a large aspect ratio and a small radius of curvature at tip make them ideal for low-voltage field emission devices including backlight units of liquid crystal display, lighting lamps, X-ray source, microwave amplifiers, electron microscopes, etc. In field emission devices for display applications, the phosphor anode is positioned against the CNT emitters. In most case, light generated from the phosphor by electron bombardment passes through the anode front plate to reach observers. However, light is produced in a narrow depth of the surface of the phosphor layer because phosphor particles are big as much as several micrometers, which means that it is necessary to transmit through the phosphor layer. Hence, a drop of light intensity is unavoidable during this process. In this study, we fabricated a transparent cathode back plate by depositing an ultra-thin film of single walled CNTs (SWCNTs) on an indium tin oxide (ITO)-coated glass substrate. Two types of phosphor anode plates were employed to our transparent cathode back plate: One is an ITO glass substrate with a phosphor layer and the other is a Cr-coated glass substrate with phosphor layer. For the former case, light was radiated from both the front and the back sides, where luminance on the back was ~30% higher than that on the front in our experiments. For the other case, however, light was emitted only from the cathode back side as the Cr layer on the anode glass rolled as a reflecting mirror, improving the light luminance as much as ~60% compared with that on the front of one. This study seems to be discussed about the morphologies and field emission characteristics of CNT emitters according to the experimental parameters in fabricating the lamps emitting light on the both sides or only on the cathode back side. The experimental procedures are as follows. First, a CNT aqueous solution was prepared by ultrasonically dispersing purified SWCNTs in deionized water with sodium dodecyl sulfate (SDS). A milliliter or even several tens of micro-liters of CNT solution was deposited onto a porous alumina membrane through vacuum filtration. Thereafter, the alumina membrane was solvated with the 3 M NaOH solution and the floating CNT film was easily transferred to an ITO glass substrate. It is required for CNT film to make standing CNTs up to serve as electron emitter through an adhesive roller activation.