• Transactions of the Korean Society of Mechanical Engineers
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• v.10 no.1
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• pp.78-85
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• 1986

This study has been made to investigate Behavior of the fatigue crack propagation for the purpose of taking into consideration the fatigue behavior Which initiate and propagate in tip of defect of the defected specimens, Which Contain the micro-hole or micro-slit. Especially, the specimens have been conducted with high-freguency heat treatment of 850.deg. C, 1050.deg. C to consider strength elevation of defected specimens. The results of this study are as follow; (1) The case of the same in the length of crack, the fatigue crack propagation rate of the micro-slit is always faster than that of micre-hole. But, the first step of the fatigue crack propagation it is not always so. (2) Fatigue crack propagation rate of specimens with micro-slit or micro-hole which have been treated with high-frequency heat treatment satisfy the following formula between the fatigue crack propagation rate and nominal stress; dl/dN .var..sigma.$^{m}$ *l$^{n}$ .

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.451-457
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• 2003

The silicon wafer is stable status at room temperature, but it is weak at high temperatures which is necessary for it to be fabricated into a power semiconductor device. During thermal diffusion processing, a high temperature produces a variety thermal stress to the wafer, resulting in device failure mode which can cause unwanted oxide charge or some defect. This disrupts the silicon crystal structure and permanently degrades the electrical and physical characteristics of the wafer. In this paper, the electrical characteristics of a single oxide layer due to high temperature diffusion process, wafer resistivity and thickness of polyback was researched. The oxide quality was examined through capacitance-voltage characteristics, defect density and BMD(Bulk Micro Defect) density. It will describe the capacitance-voltage characteristics of the single oxide layer by semiconductor process and device simulation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.9
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• pp.707-713
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• 2001

As the integrated circuit device shrinks to smaller dimensions, chemical mechanical polishing (CMP) process was requirdfo the global planarization of inter-metal dielectric (IMD) layer with free-defect. However, as the IMD layer gest thinner, micro-scratches are becoming as major defects. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Micro-scratches are generated by agglomerated slurry, solidified and attached slurry in pipe line of slurry supply system. To prevent agglomerated slurry particle from inflow, we installed 0.5${\mu}{\textrm}{m}$ point of use (POU) filter, which is depth-type filter and has 80% filtering efficiency for the 1.0${\mu}{\textrm}{m}$ size particle. In this paper, we studied the relationship between defect generation and polished wafer counts to understand the exact efficiency fo the slurry filteration, and to find out the appropriate pad usage. Our experimental results showed that it sis impossible to prevent defect-causing particles perfectly through the depth-type filter. Thus, we suggest that it is necessary to optimize the slurry flow rate, and to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of depth type filter.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1891-1894
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• 1999

We can classify the scratches after CMP process into micro-scratch and macro-scratches according to the scratch size, scratch intensity and defect map, etc. The micro-scratches on wafer after CMP process are discussed in this paper. From many causes, major factor that influences the formation of micro-scratch is known as particle size distribution of slurry.(1) It is indefinite what size or type of particle can cause micro-scratch on wafer surface, but there is possibility caused by large particle over 1um. The best way for controlling these large particle to inflow is to use the slurry filter on POU(Point of user). But the slurry filter(especially, depth-type filter) has sometimes the problem which makes more sever micro-scratches on wafer surface after CMP. We studied that depth-type slurry filter has what kind of week-points and the number of scratch could be reduced by lowering slurry flow rate and by using high spray bar which sprays DIW on polishing pad with high pressure.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• v.42 no.1
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• pp.20-30
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• 2016

Objectives: To validate a critical-size mandibular bone defect model in miniature pigs. Materials and Methods: Bilateral notch defects were produced in the mandible of dentally mature miniature pigs. The right mandibular defect remained untreated while the left defect received an autograft. Bone healing was evaluated by computed tomography (CT) at 4 and 16 weeks, and by micro-CT and non-decalcified histology at 16 weeks. Results: In both the untreated and autograft treated groups, mineralized tissue volume was reduced significantly at 4 weeks post-surgery, but was comparable to the pre-surgery levels after 16 weeks. After 16 weeks, CT analysis indicated that significantly greater bone was regenerated in the autograft treated defect than in the untreated defect (P=0.013). Regardless of the treatment, the cortical bone was superior to the defect remodeled over 16 weeks to compensate for the notch defect. Conclusion: The presence of considerable bone healing in both treated and untreated groups suggests that this model is inadequate as a critical-size defect. Despite healing and adaptation, the original bone geometry and quality of the pre-injured mandible was not obtained. On the other hand, this model is justified for evaluating accelerated healing and mitigating the bone remodeling response, which are both important considerations for dental implant restorations.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2009.05a
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• pp.94-97
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• 2009

Cast defect in large steel ingots are estimated in quality and compared each other cast conditions on simulation results by now. The cast defects, micro-crack, shrinkage, pin hole which are predictable in simulation with a reasonable accuracy. In this study, 15 ton steel ingot casting was simulated for solidification model and cast defect prediction. And the real cast was carried out in a foundry for the compeer to the simulation results, the cast defect prediction. Also, the quantity of predicted defect was tried to measuring with the defect mach counting for the various simulated cast conditions. The defect quantity work was used to find the optimized cast condition in DOE(design of experiment) procedure.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2009.10a
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• pp.169-172
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• 2009

Multiple scale modeling has been applied to predict defect shape change during the wire rod rolling process. The size difference between bloom and defect prevent using usual FEM approaches due to the enormous number of elements required to depict the defect. The newly developed multiple scale model can visualize defect shape changes during the multi stands rolling process. The defect positioned at the top and side of bloom are smoothed out but the one at the middle evolved as folding or remained as crack. This approach can be used for defect control with roll shape design and initial bloom shape.

• Journal of Ocean Engineering and Technology
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• v.28 no.4
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• pp.268-273
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• 2014

To investigate the turbulence characteristics within the boundary layer over a flat plate, an experimental study was performed using a PIV technique in a circular water channel. For two water velocities, 0.92 and 1.99 m/s, the water velocity profiles were taken and analyzed to determine turbulent characteristics such as the Reynolds stress, Taylor micro-length scale, and Kolmogorov length scale within the defect law region of the boundary layer. These analysis methods may be applied to research on the friction drag reduction technology using micro-bubbles or an air sheet over the surface of a ship's hull, because the physical reason for the friction drag reduction could be found by understanding the variation of the turbulence characteristics and structures in the boundary layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.30-33
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• 2001

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectrics, which can apply to employed in integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of free-defects in inter-level dielectrics (ILD). Especially, defects like micro-scratch lead to severe circuit failure, and affects yield. CMP slurries can contain particles exceeding $1{\mu}m$ size, which could cause micro-scratch on the wafer surface. The large particles in these slurries may be caused by particle agglomeration in slurry supply line. To reduce these defects, slurry filtration method has been recommended in oxide CMP. In this work, we have studied the effects of filtration and the defect trend as a function of polished wafer count using various filters in inter-metal dielectric(IMD)-CMP. The filter installation in CMP polisher could reduce defect after IMD-CMP. As a result of micro-scratches formation, it shows that slurry filter plays an important role in determining consumable pad lifetime.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.34-37
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• 2001

As the integrated circuit device shrinks to smaller dimensions, chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric (IMD) layer with free-defect. However, as the inter-metal dielectrics (IMD) layer gets thinner, micro-scratches are becoming as major defects. Micro-scratches are generated by agglomerated slurry, solidified and attached slurry in pipe line of slurry supply system. To prevent agglomerated slurry particle from inflow, we installed 0.5${\mu}m$ POU (point of use) filter, which is depth-type filter and has 80% filtering efficiency for the $1.0{\mu}m$ size particle. In this paper, we studied the relationship between defect generation and pad count to understand the exact efficiency of the slurry filtration, and to find out the appropriate pad usage. Our preliminary results showed that it is impossible to prevent defect-causing particles perfectly through the depth-type filter. Thus, we suggest that it is necessary to optimize the flow rate of slurry to overcome depth type filters weak-point, and to install the high spray of de-ionized Water (DIW) with high pressure.