• Journal of the Korean Chemical Society
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• v.61 no.2
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• pp.57-64
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• 2017

Monoclinic $VO_2(M)$ nanoparticles codoped with 1.5 at. % W and 2.9 at. % Mg were synthesized by the hydrothermal treatment and post-thermal transformation method of $V_2O_5-H_2C_2O_4-H_2O$ with $Na_2WO_4$ and $Mg(NO_3)_2$. The composite thin film of the W/Mg-codoped $VO_2(M)$ with a commercial acrylic block copolymer was also prepared on PET substrate by wet-coating method. The reversible phase transition characteristics of the codoped $VO_2(M)$ nanoparticles and the composite film were investigated from DSC, resistivity and Vis-NIR transmittance measurements compared with the undoped and Wdoped $VO_2(M)$ samples. Mg-codoping into W-doped $VO_2(M)$ nanoparticles synergistically enhanced the transition characteristics by increasing the sharpness of transition while the transition temperature ($T_c$) lowered by W-doping was maintained. The codoped composite film showed the prominently enhanced NIR switching efficiency compared to only W-doped $VO_2(M)$ film with a lowered $T_c$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.114-114
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• 2009

ZnO has received considerable attention due to its potential applicability to optoelectronic devices such as ultraviolet-light emitting diodes (UVLEDs) and laser diodes (LDs). As well known, however, polar ZnO with the growth direction along the c-axis has spontaneous and piezoelectric polarizations that will result in decreased quantum efficiency. Recently, nonpolar ZnO has been studied to avoid such a polarization effect. In order to realize applications of nonpoar ZnO-based films to LEDs, growth of high quality alloys for quantum well structures is one of the important tasks that should be solved. $Mg_xZn_{1-x}O$ and $Cd_xZn_{1-x}O$ is ones of most promising alloys for this application because the alloys of ZnO with MgO and CdO provide a wide range of band-gap engineering spanning from 2.4 to 7.8 eV. In this study, we investigated on $Mg_xZn_{1-x}O$ films grown with various Mg/Zn flux ratios The films were grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). we investigated on $Mg_xZn_{1-x}O$ films grown with various Mg/Zn flux ratios. The films were grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). With the relatively low Mg/Zn flux ratios, a typical striated anisotropic surface morphology which was generally observed from the nonpolar (11-20) ZnO film on r-plane sapphire substrates. By increasing the Mg/Zn flux ratio, however, additional islands were appeared on the surface and finally the surface morphology was entirely changed, which was generally observed for the (0001) polar ZnO films by losing the striated morphology. Investigations by X-ray $\Theta-2{\Theta}$ diffraction revealed that (0002) and (10-11) ZnO planes are appeared in $Mg_xZn_{1-x}O$ films by increasing the Mg/Zn flux ratio. Further detailed investigation by transmission electron microscopy (TEM) and photoluminescence (PL) will be discussed.

• Journal of Microbiology
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• v.35 no.3
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• pp.193-199
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• 1997

From several industrial wastewaters, 14 bacterial strains which degrade benzene, toluene, o-xylene, m-xylene, or p-xylene (BTX) were obtained. These strains were characterized as to their species composition and the substrate range, kinetic parameters and the substrate interactions were investigated. Although BTX components have a similar chemical structure, isolated strains showed different substrate ranges and kinetic parameters. None of the strains could degrade all of BTX components and most of them showed an inhibition (Haldane) kinetics on BTX, BTX mixtures were removed under inhibitory substrate interactions with variation in the intensity of inhibition. For a complete degradation of BTX, a defined mixed culture containing three different types of patyways was constructed and all of the BTX components were simultaneously degraded with the totla removal rate of 225.69 mg/g biomass/h Judging from the results, the obtained mixed culture seems to be useful for the treatment of BTX-contaminated wastewater or groundwater as well as for the removal of BTX from the contaminated air stream.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.540-543
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• 2004

The stress of MgO thin film, which is used as a dielectric protective layer in AC-PDP, was measured by a laser scanning method. MgO films were deposited bye-beam evaporation on glass substrates with dielectrics layer on them in various deposition temperatures ranging from room temperature to 300 $^{\circ}C$. The compressive stress of MgO films was increased with increasing substrate temperature due to intrinsic stress accumulation, causing the densification of the films. Both firing voltage ($V_f$) and sustaining voltage ($V_s$) were reduced for the higher compressively stressed and densified films. In the other hand, another film properties such as preferred crystallographic orientation and surface roughness seemed not to influence the discharge characteristics of $V_f$ and $V_s$ significantly.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.233-239
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• 1998

SiC thin films were deposited by chemical vapor deposition method using tetramethylsilane (TMS) and hexamethyldisilane (HMDS). The chamber pressure during the deposition was kept at about 1 torr. Precursor was transported to the reaction chamber by $H_2$gas and SiC deposition was carried out at the reaction temperature of $1200^{\circ}C$. Si-wafer masked with tantalum and MgO single crystal covered with platinum and molybdenum were used as substrates. The selectivity of SiC deposition was observed by comparing the microstructure between metal (Ta, Pt, and Mo) surfaces and substrate surfaces (Si and MgO). The deposited films were identified as the $\beta-SiC$ phase by X-ray diffraction pattern. Also, the deposition -behavior of SiC on each surface was investigated by the scanning electron microscope analysis.

• Journal of the Korean Ceramic Society
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• v.49 no.1
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• pp.111-117
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• 2012

Dependencies of thermal properties on the crystallization behavior of $0.9CaMgSi_2O_6-0.1MgSiO_3$ glass-ceramics were investigated as a function of heat-treatment temperature from $750^{\circ}C$ to $950^{\circ}C$. The crystallization behavior of the specimens depended on the heat-treatment temperature, which could be evaluated by differential thermal analysis (DTA), Fourier transform infrared spectroscopy (FT-IR), and X-ray diffraction (XRD) analysis by the Rietveld-reference intensity ratio (RIR) combined procedure. With an increase of the heat-treatment temperature, the thermal conductivity and thermal diffusivity of the heat-treated specimens increased. These results could be attributed to the increase of crystallization with heat-treatment temperature. However, the specific heat capacity of the heat-treated specimens was not affected by the heat-treatment temperature. The thermal conductivities measured from $25^{\circ}C$ to $100^{\circ}C$ were also discussed for application to lighting-emitting diode (LED) packages and substrate materials.

• The Korean Journal of Mycology
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• v.41 no.1
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• pp.21-27
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• 2013

This study was carried out to investigated optimum mixing ratio of Korean natural Acer tegmentosum for production of functional oyster mushroom. Total nitrogen and carbon sources of Acer tegmentosum were 0.2% and 44.4%, respectively and C/N ratio was 234. Total nitrogen source and pH of substrate mixed with Acer tegmentosum were 2.7~2.9 and 4.8~5.0, respectively. The contents of $P_2O_5$, $K_2O$ and MgO at Acer tegmentosum media were higher than that of the control. Mycerial growth was the fastest at Acer tegmentosum 10%, and slower by increase of Acer tegmentosum substrate. Yields of fruiting body was the highest to 159 g/850 mL at 10% of Acer tegmentosum and dimeter and thick of pileus were the highest, too. The L value of pileus and stipes were decreased by increase of Acer tegmentosum substrate, but there was no significant difference in the a-value and the b-value. The contents of $P_2O_5$ and $K_2O$ of fruiting body were increased at Acer tegmentosum substrate, but there was no significant difference in contents of CaO, MgO and $Na_2O$.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.370.1-370.1
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• 2014

Giant magnetoresistance (GMR), tunneling magnetoresistance (TMR), and magnetic random-access memory (MRAM) are currently active areas of research. Magnetite, Fe3O4, is predicted to possess as half-metallic nature, ~100% spin polarization (P), and has a high Curie temperature (TC~850 K). On the other hand, Spinel ferrite CoFe2O4 has been widely studies for various applications such as magnetorestrictive sensors, microwave devices, biomolecular drug delivery, and electronic devices, due to its large magnetocrystalline anisotropy, chemical stability, and unique nonlinear spin-wave properties. Here we have investigated the magneto-transport properties of epitaxial CoxFe3-xO4 thin films. The epitaxial CoxFe3-xO4 (x=0; 0.4; 0.6; 1) thin films were successfully grown on MgO (100) substrate by molecular beam epitaxy (MBE). The quality of the films during growth was monitored by reflection high electron energy diffraction (RHEED). From temperature dependent resistivity measurement, we observed that the Werwey transition (1st order metal-insulator transition) temperature increased with increasing x and the resistivity of film also increased with the increasing x up to $1.6{\Omega}-cm$ for x=1. The magnetoresistance (MR) was measured with magnetic field applied perpendicular to film. A negative transverse MR was disappeared with x=0.6 and 1. Anomalous Hall data will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.17-20
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• 2000

This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD's and micro-heaters on the Si substrate, in which MgO thin-films were used as medium layer in order to improve adhesion of Pt thin-films to $SiO_2$ layer, The MgO layer improved adhesion of Pt thin-films to $SiO_2$ layer without any chemical reactions to Pt thin-films under high annealing temperatures. In investigating output characteristics of the fabricated micro-flowsensors, the output voltages increased as gas flow rate and its conductivity increased due to increase of heat-loss from sensor to external. Output voltage was 82 mV at $N_2$ flow rate of 2000 seem/min, heating power of 1.2W.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.43-46
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• 2002

Ferroelectric Mg-doped SBT and Ti-doped SBT were successfully deposited on Pt/Ti/$SiO_2/Si$ substrate by using a sol-gel solution coating method. The solutions were prepared through out adding the metal alkoxide solutions to SBT solution. The typical hysteresis loop of the films was obtained at 5V. The measured $2P_r$ value were $16.50{\mu}C/cm^2$ for SBT, $18.98{\mu}C/cm^2$ and for Mg-doped SBT, and $17.10{\mu}C/cm^2$ for Ti-doped SBT at an applied voltage of 5V, respectively. And it is found that the leakage current densities are less than $10^{-7}A/cm^2$ when applied voltage is less than 10.8MV/cm, which indicates the excellent insulating characteristics.