• Title/Summary/Keyword: MgO film

Search Result 509, Processing Time 0.026 seconds

Study on dielectric properties of $Ba_{0.5}Sr_{0.5}TiO_{3}$thin films for high-frequency passive device (고주파 수동소자 유전체용 $Ba_{0.5}Sr_{0.5}TiO_{3}$ 박막의 유전특성에 관한 연구)

  • 이태일;최명률;박인철;김홍배
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2001.07a
    • /
    • pp.263-266
    • /
    • 2001
  • In this paper, we investigated dielectric properies for BST thin films that was deposited on MgO/Si substrates using RF magnetron sputtering. In here, MgO film was used to perform that a diffusion b arrier between the BST film and Si substrate and a buffer layer to assist the BST film growth. A d eposition condition for MgO films was RF Power of 50W, substrate temperature of room temperature and the working gas ratio of Ar:O$_2$ were varied from 90:10 to 60:47. Finally we manufactured the cap acitor of Al/BST/MgO/Si/Al structure to know electrical properties of this capacitor through I-V, C-V measurement. In the results, C-V aha racteristic curves was shown a ferroelectric property so we measured P-E. A remanent poliazation and coerceive electric field was present 2$\mu$C/cm$^2$ and -27kV/cm respectively at Ar:O$_2$=90:10. And a va clue of dielectric constant was 86 at Ar:02=90:10.

  • PDF

Effect of NiO spin switching on the Fe film magnetic anisotropy in epitaxially grown Fe/NiO/Ag(001) and Fe/NiO/MgO(001) systems

  • Kim, Won-Dong;Park, Ju-Sang;Hwang, Chan-Yong;Wu, J.;Qiu, Z.Q.
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2010.02a
    • /
    • pp.366-366
    • /
    • 2010
  • Single crystalline Fe/NiO bilayers were epitaxially grown on Ag(001) and on MgO(001), and investigated by Low Energy Electron Diffraction (LEED), Magneto-Optic Kerr Effect (MOKE), and X-ray Magnetic Linear Dichorism (XMLD). We find that while the Fe film has an in-plane magnetization in both Fe/NiO/Ag(001) and Fe/NiO/MgO(001) systems, the NiO spins switch from out-of-plane direction in Fe/NiO/MgO(001) to in-plane direction in Fe/NiO/Ag(001). These two different NiO spin orientations generate remarkable different effects that the NiO induced magnetic anisotropy in the Fe film is much greater in Fe/NiO/Ag(001) than in Fe/NiO/MgO(001). XMLD measurement shows that the much greater magnetic anisotropy in Fe/NiO/Ag(001) is due to a 90o-coupling between the in-plane NiO spins and the in-plane Fe spins which causes a switching of the NiO spins during the Fe magnetization reversal.

  • PDF

Electro - Optical Characteristics of MgO Double Layer prepared by E-beam and Sputtering Method (E-beam과 R.F. 마그네트론 스퍼터링을 사용한 double MgO박막의 전기-광학적 특성)

  • Ok, J.W.;Kim, H.J.;Choi, J.H.;Choi, J.Y.;Kim, D.H.;Lee, H.J.;Yoo, S.B.;Park, J.H.
    • Proceedings of the KIEE Conference
    • /
    • 2005.07c
    • /
    • pp.2172-2174
    • /
    • 2005
  • MgO has been used as the material of the protecting layer for AC PDP. AC PDP is influenced by characteristics of the surface glow discharge on the MgO thin film. Because MgO thin film is practically discharge electrodes, the discharge characteristics of MgO thin film should be varied with the method of deposition. In this study, changing order and time of deposition, we use electron beam evaporation system and R.F reactive magnetron sputtering system in the MgO deposition. Particularly, after using electron beam evaporation system, we use R.F. reactive magnetron sputtering system in the MgO deposition, then we could get lower amount of charge and higher luminance efficiency than only using electron beam evaporation system.

  • PDF

Discharge Properties of $Al_2O_3$/MgO as a Dielectric Protection Layer ($Al_2O_3$/MgO 유전체 보호막의 방전특성)

  • Jeoung, Jin-Man;Shin, Kyung;Lee, Young-Jong;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 1998.11a
    • /
    • pp.307-310
    • /
    • 1998
  • In this paper, $Al_2$O$_3$/MgO belayer was prepared with Electron-beam evaporation and the properties of the film was investigated in order to improve the property of MgO film, which is used for the protection layer in PDP(Plasma Display Panel). $Al_2$O$_3$/MgO belayer were improved of roughness and it were condensed by annealing, and the result of XPS analysis for $Al_2$O$_3$/MgO belayer unchanged binding energy. To investigate electric characteristics, discharge properties of $Al_2$O$_3$/MgO belayer were compared with discharge minimum voltage for MgO monolayer through Ar discharge experiments.

  • PDF

A Study on the Characteristics of MgO Thin Films Prepared by Electron Beam (전자빔 증착법에 의해 형성된 MgO 박막의 증착 및 특성)

  • Lee, Choon-Ho;Kim, Sun-Il;Shin, Ho-Shik
    • Journal of the Korean Ceramic Society
    • /
    • v.39 no.12
    • /
    • pp.1171-1176
    • /
    • 2002
  • The growth characteristics on the MgO thin films prepared by the e-beam evaporation method have been investigated. We observed the film of preferred orientation and surface morphology with various parameters such as substrate temperature, deposition rate on Si(100) and slide glass respectively. Consequently, it was shown that MgO(111) preferred orientation films can be obtained as the deposition rate was increased on Si(100) substrate. MgO(220) peak was found as the substrate temperature was increased. Whereas, in case of slide glass the orientation is changed from (200) to (111) by substrate temperature. Also we investigated the relationship between the film characteristics and the orientation of MgO thin films.

Characterization of Highly Conducting ZnMgBeGaO/Ag/ZnMgBeGaO Transparent Conductive Multilayer Films with UV Energy Bandgap

  • Le, Ngoc Minh;Hoang, Ba Cuong;Lee, Byung-Teak
    • Korean Journal of Materials Research
    • /
    • v.27 no.12
    • /
    • pp.695-698
    • /
    • 2017
  • ZnMgBeGaO/Ag/ZnMgBeGaO multilayer structures were sputter grown and characterized in detail. Results indicated that the electrical properties of the ZnMgBeGaO films were significantly improved by inserting an Ag layer with proper thickness (~ 10 nm). Structures with thicker Ag films showed much lower optical transmission, although the electrical conductivity was further improved. It was also observed that the electrical properties of the multilayer structure were sizably improved by annealing in vacuum (~35 % at $300^{\circ}C$). The optimum ZnMgBeGaO(20nm)/Ag(10nm)/ZnMgBeGaO(20nm) structure exhibited an electrical resistivity of ${\sim}2.6{\times}10^{-5}{\Omega}cm$ (after annealing), energy bandgap of ~3.75 eV, and optical transmittance of 65 % ~ 95 % over the visible wavelength range, representing a significant improvement in characteristics versus previously reported transparent conductive materials.

A Study on the MgO thin film prepared by Unbalanced Magnetron Sputtering in AC PDP (AC PDP의 불평형 마그네트론 스파트링에 의해 형성된 MgO 박막의 특성에 관한 연구)

  • 김영기;박정후;김영대;박정후;조정수
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 1999.05a
    • /
    • pp.379-382
    • /
    • 1999
  • In this paper, we investigated the characteristics of MgO thin film prepared by unbalanced magnetron sputtering(UBMS) in surface discharge type AC PDP The minimum discharge voltage is obtained for the sample of substrate bias voltage-10V. Moreover the anti-sputtering characteristics of MgO thin film by UBMS is improved about 40% than one of balanced magnetron sputtering(BMS)

  • PDF

The relationship between the discharge characteristics and the superficial layer of MgO in AC PDP

  • Kim, Hee-Joong;Choi, Kyung-Cheol
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2002.08a
    • /
    • pp.224-227
    • /
    • 2002
  • The relationship between the discharge aging time and the superficial layer thickness of MgO thin film was investigated in an AC PDP. The discharge characteristics of an AC PDP with the various aging time were evaluated by discharge aging experiments. We find the presence of a superficial lay which is related to the discharge characteristics during aging process. The superficial layer of MgO thin film was observed by Transmission Electron Microscope (TEM). It was found that the superficial layer thickness of MgO was dependent on discharge aging time.

  • PDF

Water-spliting on ultrathin MgO(100) film on Ag(100)

  • Jo, Seong-Beom;Jo, Jun-Hyeong;Jeong, Yong-Jae
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2011.02a
    • /
    • pp.317-317
    • /
    • 2011
  • Water dissociation on oxide surface has been researched in many fields because of its importance as fundamental phenomenas. MgO(001) is a good model system to understand heterogeneous catalysis, gas sensors, ground-water contaminants, and atmosphere chemistry. Over decades, ultrathin film of MgO on Ag(100) have attracted research activities thanks to its enhanced catalytic property. Correlation of the oxide and the metal, potential screening, charge fluctuation from interface reconstruction makes different energetics of hydroxylation of waters on film. We calculate the water-spliting energetics under the vacuum system.

  • PDF

A Study on the MgO Protective Layer Deposited by Oxygen-Neutral-Beam-Assisted Deposition in AC PDP (산소 중성빔으로 보조증착된 MgO 보호막을 갖는 AC PDP의 특성에 관한 연구)

  • Li, Zhao-Hui;Kwon, Sang-Jik
    • Journal of the Korean Vacuum Society
    • /
    • v.17 no.2
    • /
    • pp.96-101
    • /
    • 2008
  • The magnesium oxide (MgO) protective layer plays an important role in plasma display panels (PDPs). Our previous work demonstrated that the properties of MgO thin film could be improved, which were deposited by Ion-Beam-Assisted Deposition (IBAD). However arc discharge always occurs during the IBAD process. To avoid this problem, Oxygen-Neutral-Beam-Assisted Deposition (NBAD) is used to deposit MgO thin films in this paper. The energy of the oxygen neutral beam was used as the parameter to control the deposition. The experimental results showed that the oxygen neutral beam energy was effective in determining in structural and discharge characteristics. The lowest firing inception voltage, the highest brightness and the highest luminous efficiency were obtained when the MgO thin film was deposited with an oxygen neutral beam energy of 300eV. The surface morphology of MgO thin film was also analyzed using AFM (Atomic Force Microscopy) and SEM (Scanning Electron Microscopy).