• 한국전기전자재료학회논문지
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• 제23권2호
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• pp.118-123
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• 2010

The eco-friendly technologies have been extended as matter of international concern due to various diseases and syndromes according to an environmental pollution. In this study, we have manufactured a ceramic cluster with thick film type for anion generation equipment which is maximized anion but minimized ozone contents generated. To develop the formulation of ceramic cluster, we conducted the $Mg_2SiO_4$ powders doped with 10 vol% glass frits as Na-Zn-B-O system and sintered at $1050^{\circ}C$ for 2 hours in air for starting materials and investigated the matching properties between the Ag-Pd electrode and the starting materials. The sintered sample for the composition of cluster has 6.7 of dielectric constant and 32 kV/mm of withstand voltage. The yield of anions was measured according to an electrode pattering, discharge gap between electrode, and thickness of electrode protective layer in the cluster of thick film type. We have manufactured the ceramic clusters with optimized thick film structure that have an anion over a hundred particles and the ozone of 0.6 ppb generated.

• 한국재료학회지
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• 제8권6호
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• pp.526-531
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• 1998

HVPE(hydride vapor phase epitaxy)법으로 (111) $MgAl_2O_4$기판 위에 $10~240\mu{m}$두께의 GaN를 성장하고, GaN의 두께에 따 광학적 성질을 조사하였다. $MgAl_2O_4$기판 위에 성장된 GaN의 PL 특성은 결정성장온도에서 기판으로부터 Mg이 out-diffusion하여 auto-doping 됨으로써 불순물이 첨가된 GaN의 PL 특성을 나타내었다. 10K의 온도데서 측정된 PL 스펙트럼은 자유여기자와 속박여기자의 재결합천이에 의한 피크들과 불순물과 관련된 도너-억셉터 쌍 사이의 재결합 및 이의 포논 복제에 의한 발광으로 구성되었으며, 깊은 준위로부터의 발광은 나타나지 않았다. 중성 도너에 속박된 여기자 발광 에너지와 라만 $E_2$모드 주파수는 GaN의 두께가 증가함에 따라 지수 함수적으로 감소하였으며, GaN 내의 잔류 응력에 대하여 라만 E2 모드 주파수는$\Delta$$\omega$=3.93$\sigma$($cm^{-1}$/GPa)의 관계로 변화하였다.

• 한국결정성장학회지
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• 제9권1호
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• pp.20-22
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• 1999

본 연구에서는 floating zone 법에 의해서 고융조성의 순수한 $LiNbO_{3}$와 MgO가 5 mol% 첨가된 $LiNbO_{3}$ 단결정을 육성하였다. 화학양론조성의 $LiNbO_{3}$는 순수한 $LiNbO_{3}$를 VTE(vapor transport equilibration) 법에 의해 처리하여 준비하였고 위의 세 결정을 기본으로 하여 결정의 화학양론비와 첨가물($Mg^{2+}$)에 따른 $LiNbO_{3}$의 물성변화를 조사하였다. 공융조성의 $LiNbO_{3}$에서 높은 농도의 MgO 첨가는 화학양론조성 $LiNbO_{3}$와 유사한 특성을 보였다. Curie 온도는 공융조성의 순수한 $LiNbO_{3}$의 $1145^{\circ}C$에서 $1200^{\circ}C$ 이상으로 상승되었고 가시광선 영여그이 흡수단의 위치도 단차장쪽으로 10 nm 이상 이동하였다. MgO가 첨가된 결정의 $OH^{-}$ 흡수밴드의 위치는 40 nm 정도 단파장 영역으로 크게 이동하였다.

• 전자공학회논문지D
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• 제36D권12호
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• pp.31-36
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• 1999

박막 전계발광소자의 새로운 형광체를 개발하기 위하여 $Mg._5Zn._5SiN_2:Tb$ 및 $Mg._5Zn._5SiN_2:Eu$ 형광체를 합성한 후, 각각 및 발광 및 음극선 발광 특성을 조사하였다. 합성된 각각의 형광체의 빛 발광 스펙트럼과 음극선 발광 스펙트럼은 동일하였으며, Tb 도는 Eu 발광 중심체의 고유한 발광 기구에 의해서 발광하는 것으로 확인되었다. 전자빔 증착 장비로 제작된 $Mg._8Zn._2SiN_2:Eu$ 박막 전계발광소자의 CIE 색 좌표는 x=0.47, y=0.46, 문턱 전압은 47V 및 최대 전압 80V에서의 휘도는 23.5 cd/cm^2$를 나타내었다. 또한 박막 전계발광소자의 capacitance-voltage 특성과 charge-voltage 특성 등의 전기적 특성도 함께 측정되었다.

• 한국초전도ㆍ저온공학회논문지
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• 제16권2호
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• pp.36-41
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• 2014

Temperature dependence of magnetic moment (m-T) and the magnetization (M-H) at 5 K and 20 K of the in situ processed $MgB_2$ bulk pellets with/without carbon (C) doping were examined. The superconducting critical temperature ($T_c$), the superconducting transition width (${\delta}T$) and the critical current density ($J_c$) were estimated for ten test samples taken from the $MgB_2$ bulk pellets. The reliable m-T characteristics associated with the uniform $MgB_2$ formation were obtained for both $MgB_2$ pellets. The $T_cs$ and ${\delta}Ts$ of all test samples of the undoped $MgB_2$ were the same each other as 37.5 K and 1.5 K, respectively. The $T_cs$ and ${\delta}Ts$ of the C-doped $MgB_2$ were 36.5 K and 2.5 K, respectively. Unlike the m-T characteristics, there existed the difference among the M-H curves of the test samples, which might be caused by the microstructure variation. In spite of the slight $T_c$ decrease, the C doping was effective in enhancing the $J_c$ at 5 K.

• 한국초전도ㆍ저온공학회논문지
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• 제21권2호
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• pp.36-39
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• 2019

Effects of the spherically shaped Ge and the rod-like carbon-coated Ge on the superconducting properties of $MgB_2$ were investigated. Pure Ge and carbon-coated Ge nano-powders were synthesized under the different amount of $CH_4$ (0 to 5 kPa) by using DC thermal plasma method. When the $CH_4$ was added ~100 nm sized Ge with a spherical shape changed to rod-like morphology with a diameter of ~30-70 nm and a length of ~400-500 nm. Also it was confirmed that thin carbon layers of a few nanometers were formed along the rod length and the agglomerated carbons were found on the edges of rods. Pure spherical Ge and Ge/C rods were mixed and milled with Mg & B precursor to form the doped $MgB_2$ bulk samples by the solid-state reaction method. Almost no change of $T_c$ was noticed for the pure Ge-added $MgB_2$, whereas $T_c$ was found to decrease with the Ge/C-added $MgB_2$ samples. It was found that the pure spherical Ge showed to have a negative effect on the flux pinning of $MgB_2$. However, Ge/C rods can enhance the flux pinning property of $J_c$ due to the coated carbon on Ge rods.

• Bulletin of the Korean Chemical Society
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• 제33권5호
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• pp.1719-1721
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• 2012

We have investigated the $H_2$ adsorption structures and binding energies of the metal (M)-doped (M = Li, Na, K, Mg, and Al) silicon complexes, $M-Si_{19}H_{11}$ and $M-Si_{24}H_{12}$, using density functional calculations. Alkali metals are preferred as doping elements because the Mg-Si and Al-$H_2$ interactions are weak. The maximum numbers of $H_2$ molecules that can be adsorbed are four and five for M=Li and K, respectively. We propose that the K-decorated silicon material might be an effective hydrogen storage material with high hydrogen capacity and high reversibility.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.1083-1086
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• 2004

We applied the spray pyrolysis technique to prepare Mn-doped $BaMgAl_{10}O_{17}$ (BAM) particles with high photoluminescence, which could be used in the plasma display device as a green phosphor. Several preparation conditions were investigated in order to tail the vacuum ultraviolet (VUV) characteristics. Some portions of barium were replaced with strontium to improve the luminescent intensity of BAM:Mn particles under VUV excitation. The content of Mn and Sr was optimized to obtain high luminescent efficiency under VUV excitation. Finally, the optimized BAM:Mn green particles showed higher photoluminescence intensity than that of commercial $Zn_2SiO_4$ and comparable with commercial barium-aluminate phosphor.

• 한국전기전자재료학회논문지
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• 제20권9호
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• pp.802-807
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• 2007

We have developed red phosphorescent top emission organic light-emitting diodes with transparent metal cathodes deposited by using thermal evaporation technique. Phosphorescent guest molecule, BtpIr(acac), was doped in host CBP for the red phosphorescent emission, Ca/Ag, Ba/Ag, and Mg/Ag double layers were used as cathode materials of top emission devices, which were composed of glass/Ni/2TNATA(15 nm)/${\alpha}$-NPD(35 nm)/CBP:BtpIr(acac)(40 nm, 10%)/BCP(5 nm)/$Alq_3$(5 nm)/cathodes. The optical transparencies of these metal cathodes strongly depend on underlying Ca, Ba, and Mg layers. These layers also strongly affect the electrical conduction and emission properties of the red phosphorescent top emission devices.

• 한국광학회:학술대회논문집
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• 한국광학회 2002년도 하계학술발표회
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• pp.136-137
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• 2002

급속도로 발전하는 정보화사회는 정보저장 및 처리에 있어서 고밀도, 대용량의 정보저장 매체를 요구한다. 따라서 3 차원적인 정보저장을 위한 연구가 활발히 진행되고 있으며, 영구적 홀 생성을 이용한 정보의 저장 및 처리도 활발히 연구되고 있는 분야 중의 하나이다. 실질적으로 응용에 필요한 실온에서의 영구적 스펙트럼 홀 생성은 희토류 금속이 첨가된 유리나 결정에서 관측되고 있는데, 이는 대부분 ＋2가 형태로 주입된 희토류 금속의 광학적 성질을 이용하는 것이다. (중략)