• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.3A
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• pp.424-429
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• 2000

In this paper, the characteristics of the asymmetric coupled microstrip(ACM) lines with finite metalization thickness are investigated using the quasi-static analysis in the multilayered structure. By mode-matching method as the quasi-static analysis. the characteristic impedances and effective dielectric constants in ACM lines are obtained as a function of metalization thickness. The numerical results show that the propagation characteristics of ACM lines in the single and multilayered structure will be changed by the variation of metalization thickness.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.05a
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• pp.13-13
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• 1999

• Analytical Science and Technology
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• v.16 no.6
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• pp.431-437
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• 2003

Metalization yield of uranium oxide to uranium metal from lithium reduction process of spent pressurized water reactor (PWR) fuels was measured using thermogravimetric analyzer. A reduced metal produced in the process was divided into a solid and a powder part, and each metalization yield was measured. Metalization yield of the solid part was 90.7~95.9 wt%, and the powder being 77.8~71.5 wt% individually. Oxidation behaviour of the quartemary alloy was investigated to take data on the thermal oxidation stability necessary for the study on dry storage of the reduced metal. At $600{\sim}700^{\circ}C$, weight increments of alloy of Mo, Ru, Rh and Pd was 0.40~0.55 wt%. Phase change on the surface of the alloy was started at $750^{\circ}C$. In particular, Mo was rapidly oxidized and then the alloy lost 0.76~25.22 wt% in weight.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.625-628
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• 1999

Recently. high-density printed circuit boards(PCB) become indispensable with the minaturization of components. Nickel is deposited on the copper patterns and followed by the gold deposition for improving connection reliability between the printed circuit boards and electronic components. Conventionally electrodeposition has been applied to metalization of copper patterns. However metalization by this method is not applicable for the isolated fine and concentrated patterns. Therefore, metalization technology of the fine patterns by electroless plating is required in place of electrodeposition. The application of electroless nickel plating for interconnection with solder strongly relies on the solderability and the interactions between nickel and solder. Factors such as phosphorus content of the deposit additive and bath temperature may influence solderability of the electroless nickel deposit. So solderability of electroless nickel/ gold deposits was investigated with substrates plated changing the condition of nickel solution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.237-237
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• 2009

전도 특성을 가지는 나노선 제작의 연구가 활발하게 진행되고 있다. 본 실험에서는 높은 전도성을 가지는 구리 이온을 이용하여 나노선을 제작하는 실험을 진행하였으며 제작된 구리-나노선의 전도특성을 분석하여 구리 이온 치환 정도에 따른 DNA 전도성 개선 여부를 확인하였다. DNA를 기반으로 구리 Metalization 횟수가 늘어날수록 나노선이 연속적으로 형성되며 선형적이고 높은 전도특성을 가지게 되는 것을 확인할 수 있었다. 이 결과로부터 본 연구에서 사용한 방법을 이용하여 제작된 구리 나노선이 향후 나노소자 제작에 크기 기여할 것으로 기대한다.

• Journal of the Korean Vacuum Society
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• v.17 no.4
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• pp.253-261
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• 2008

Programmable metallizaton cell (PMC) memory device has been known as one of the next generation non-volatile memory devices, because it includes non-volatility, high speed and high ON/OFF resistance ratio. This paper reviews the operation principle of the device. Besides, the recent research results of professor Kozicki who firstly invented the device and investigated it for the memory applications, NEC corporation which studied it for the FPGA (field programmable gate array) switch applications, ETRI and chungnam national university which examined Te-based devices are introduced.

• Journal of the Speleological Society of Korea
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• no.82
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• pp.1-4
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• 2007

In this paper, the etching of Au films using photoresist masks on Si substrates was investigated using a capacitively coupled plasma etch reactor. The advantages of plasma etch techniques over current methods for Au metalization include the ability to simplify the metalization process flow with respect to resist lift-off schemes, and the ability to cleanly remove etched material without sidewall redeposition, as is seen in ion milling. The etch properties were measured for different gas mixing ratios of CF4/Ar, and chamber pressures while the other conditions were fixed. According to statistical design of experiment (DOE), etching process of Au films was characterized and also 20 samples were fabricated followed by measuring etch rate, selectivity and etch profile. There is a chemical reaction between CF4 and Au. Au- F is hard to remove from the surface because of its high melting point. The etching products can be sputtered by Ar ion bombardment.

• Proceedings of the Korean Society of Laser Processing Conference
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• 1998.05a
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• pp.35-36
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• 1998

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.8
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• pp.45-51
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• 2007

We designed and fabricated the planar graded-gap injector GaAs Gm diodes with $1.6{\mu}m$ active length for operation at 94 GHz. The fabrication of the Gunn diode is based on MESA etching, Ohmic metalization, and overlay metalization. The measured negative resistance characteristics of the graded-gap injector GaAs Gunn diodes are examined for two different device structures changing the distance between the cathode and the anode electrodes. Also, we discuss the DC results under the forward and the reverse biases concerning the role of the graded-gap injector. It is shown that the structure having the shorter distance between the cathode and the anode electrode has higher peak current, higher breakdown voltage, and lower threshold voltage than those of the larger distance.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.8A
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• pp.626-632
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• 2003

In this paper, forward-wave -3㏈ directional coupler with finite-thickness conductor and asymmetrical coupled lines are designed and experimentally verified using mode-matching based design methodology. Most of studies published in the literatures about the coupled lines are mainly concentrated on the adjustment of coupling amount by changing various geometric configurations. The analysis results in this paper show that thicker metalization requires reduced coupler length in the forward-wave directional coupler composed of asymmetrical coupled lines. Several forward-wave directional -3 ㏈ couplers with finite metalization thickness composed of asymmetrical coupled microstrip lines have been designed in the 5 ㎓ based on proposed design method. The measured data show -4.05㏈∼-4.09㏈ coupling at center frequency which is very closed to design value. The tight coupling has been implemented with accurate design methodology which take mentalization thickness into account.