• Korean Journal of Materials Research
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• v.18 no.6
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• pp.302-306
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• 2008

Polycrystalline germanium (Ge) thin films were grown by metal organic chemical vapor deposition (MOCVD) using tetra-allyl germanium [$Ge(allyl)_4$], and germane ($GeH_4$) as precursors. Ge thin films were grown on a $TiN(50nm)/SiO_2/Si$ substrate by varying the growth conditions of the reactive gas ($H_2$), temperature ($300-700^{\circ}C$) and pressure (1-760Torr). $H_2$ gas helps to remove carbon from Ge film for a $Ge(allyl)_4$ precursor but not for a $GeH_4$ precursor. $Ge(allyl)_4$ exhibits island growth (VW mode) characteristics under conditions of 760Torr at $400-700^{\circ}C$, whereas $GeH_4$ shows a layer growth pattern (FM mode) under conditions of 5Torr at $400-700^{\circ}C$. The activation energies of the two precursors under optimized deposition conditions were 13.4 KJ/mol and 31.0 KJ/mol, respectively.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.394-399
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• 2000

The effects of the type and thickness of underlayer on the crystallographic texture and the sheet resistance of aluminum thin film were studied. Ti and Ti/TiN were examined as the underlayer of aluminum. Ti and TiN were prepared by ionized physical vapor deposition (I-PVD) metalorganic chemical vapor deposition (MOCVD), respectively. The texture and the sheet resistance of metal thin film stacks were investigated at various thicknesses of Ti or TiN, and the sheet resistance was measured after annealing at $400^{\circ}C$ in an nitrogen ambient. For I-PVD Ti underlayer, the excellent texture of aluminum <111> was obtained even at top of 5 nm of Ti. However, the sheet resistance of the metal stack was greatly increased after annealing due to the interdiffusion and reaction of Al and Ti. MOCVD TiN between Ti and Al could suppress the Al-Ti reaction without severe degradation of aluminum <111> texture. Excellent texture of aluminum was obtained for the MOCVD TiN thinner than 4 nm.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.21-23
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• 2003

MOCVD method is one of promising techniques which can fabricate YBCO coated conductors in a low Price A continuous reel-to-reel MOCVD device using a dispersed solid source was designed and manufactured. YBCO films were deposited on various substrates of metallic silver, (100) MgO and SrTiO3 single crystals. The chemical composition of the metal organic sources was changed to optimize the processing condition associate to the deposition of the stoichiometric Y3a2Cu3O7-y. We report the superconducting transition temperature, surface morphology and chemical composition of the YBCO film surfaces.

• Bulletin of the Korean Chemical Society
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• v.25 no.4
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• pp.480-484
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• 2004

$LiGaO_2$ films have been grown on Si (100) substrates using a new single precursor $[Li(OCH_2CH_2OCH_3)_2-Ga(CH_3)_2]_2$ under high vacuum conditions $(5{\times}10^{-6}Torr)$. The $[Li(OCH_2CH_2OCH_3)_2Ga(CH_3)_2]_2$ was synthe-sized and characterized by using spectroscopic methods and single-crystal X-ray diffraction analysis. The chemical composition, crystalline structure, and morphology of the deposited films were investigated by X-ray photoelectron spectroscopy, X-ray diffraction, and scanning electron microscopy. The results show that polycrystalline $LiGaO_2$ films preferentially oriented in the [010] direction can be deposited on Si (100) at 500-550$^{\circ}C$ by metal organic chemical vapor deposition (MOCVD). The single precursor $[LiOCH_2CH_2OCH_3)_2-Ga(CH_3)_2]_2$ has been found suitable for chemical vapor deposition of $LiGaO_2$ thin films on Si substrates.

• Journal of the Korean Vacuum Society
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• v.5 no.1
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• pp.62-66
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• 1996

$(Ba_{1-x}Sr_xTiO_3$ (BST) thin films have been grown on Pt-coated MgO by metal -organic chemical vapor deposition. X-ray diffraction results showed that BST films were grown on a Pt/MgO substrate with (100) preferred orientation perpendicular to the surface. The lineawr relationship of P-E curve obtained form hysteresis loop measurement indicated that the BST films had a Curie transitions below room temperature . Films deposited at $900^{\circ}C$ exhibited a smooth and dense microstructure, a dielectric constant of 202, and a dissipation facotr of 0.02 at 100kHz. The leakage current density of the BST films is about $2\times10^{-10} \;A/\textrm{cm}^2$$ at an applied electric field of 0.2 MV/cm. The electrical behavior on the current-voltage characteristics is well explained by the bulk-limited Pool-Frenkel emission.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.101-101
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• 1999

• Journal of the Optical Society of Korea
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• v.16 no.3
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• pp.313-317
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• 2012

We have evaluated a 1.3 ${\mu}m$ vertical-cavity surface-emitting laser (VCSEL), whose bottom mirror and central active layer were grown by metal organic chemical vapor deposition (MOCVD) and whose top mirror was covered with a dielectric coating, for 10 Gb/s data transmission over single-mode fibers (SMFs). Successful demonstration of error-free transmission of the directly modulated VCSEL signals at data rate of 10 Gb/s over a 10 km-long SMF was achieved for operating temperatures from $20^{\circ}C$ to $60^{\circ}C$ up to bit-error-rate (BER) of $10^{-12}$. The DC bias current and modulation currents are only 7 mA and 6 mA, respectively. The results indicate that the VCSEL is a good low-power consuming optical signal source for 10 GBASE Ethernet applications under controlled environments.

• Progress in Superconductivity
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• v.3 no.1
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• pp.125-129
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• 2001

NiO buffer layers were deposited on texture Ni tapes fur YBCO coated conductors by MOCVD(metal organic chemical vapor deposition) method, using a single solution source. Variables were deposition temperature and flow rate of $0_2$carrier gas. At higher temperatures, The NiO(111) texture was well developed, but the NiO(200) texture was developed at low temperatures. The best result was obtained at the deposition temperature of$ 470^{\circ}C$ and the gas flow rate of 200 sccm. FWHM value of $\omega$-scan fur NiO(200) of the film and $\Phi$-scan for NiO(111) of the film was $4.2^{\circ}$ and $7^{\circ}$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.47-47
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• 2007

Indium oxide conducting films were dep9sited on Si(100) substrates at various temperatures by liquid delivery metal organic chemical vapor deposition using Indium (III) tris (2,2,6,6-tetramethyl-3.5-heptanedionato) $(dpm)_3$ precursors. The films deposited at $200{\sim}400^{\circ}C$ were grown with a (111) preferred orientation and exhibit an increase of grain size from 21 to 33nm with increasing deposition temperature. In the range of deposition temperature, there is no metallic indium phase in deposited films.

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.11a
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• pp.162-163
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• 1996