• Korean Journal of Materials Research
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• v.9 no.1
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• pp.57-64
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• 1999

The electrical conductivity of TiO$_2$ doped with 0.05~1.5mol% WO$_3$ was measured in the oxygen partial pressure range of 10\ulcorner~10\ulcorner atm and temperature range of 1100~130$0^{\circ}C$ to investigate the defect types and the electrical properties. The grain size and density were increased as the liquid phase was formed by the doped WO$_3$. The secondary phase and WO$_3$peaks at the sample doped up to 4.0 mol% were not detected from the XRD results. The data(log$\sigma$/logPo$_2$) over 110$0^{\circ}C$ were divided into the four regions. From these experimental results, we proposed the following defect regions. 1) Magneli phase(extended defect), 2) Reduced rutile region which is similar to the behavior of undoped rutile, 3) Nearly stoichiometric Ti\ulcornerW\ulcornerO$_2$region in which extra charge of W\ulcorner cation is expected to be compensated by an electron, 4) Overstoichiometric Ti\ulcornerW\ulcornerO\ulcorner region which is a metal deficiency not to be observed in pure TiO$_2$. The electrical conductivity of w-doped TiO$_2$ was influenced by the measuring temperature, oxygen partial pressure, and the dopig content.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.25-27
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• 2007

$Eu^{2+}$-doped $Ca_2Si_5N_8$ was grown on Si(100) substrate using metal-organic deposition (MOD) method and post-annealed at $900^{\circ}C$ in various atmosphere. Luminescence properties of these thin films were investigated with variations of $Eu^{2+}$-doped concentrations and annealing atmosphere. Thin film was formed with clean surface and uniform thickness of about 72 nm. From the measurements of luminescence properties of thin films, film must be post-annealed in nitrogen or mixture of nitrogen and hydrogen atmosphere to emit a sufficient light. For $Ca_{1.5}Eu_{0.5}Si_5N_8$ thin film annealed at $900^{\circ}C$ in nitrogen atmosphere, excitation band from 380 to 420 nm was detected with the maximum intensity at 404 nm and two broad emission bands from 530 to 630 nm were observed. These broad excitation and emission bands must be attributed to the nitrogen incorporations into the films. From the results, $Ca_{2-x}Eu_xSi_5N_8$ thin film has probability for next generation thin film lighting applications such as light emitting diode (LED) or electro-luminescence (EL).

• Journal of Electrochemical Science and Technology
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• v.10 no.3
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• pp.271-275
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• 2019

Anodic $TiO_2$ nanotubes were simultaneously grown and doped with $RuO_2$ by single-step anodization in a negatively-charged $RuO_4{^-}$ precursor. Subsequently, a high positive voltage was imposed on the nanotubes in an $F^-$-based electrolyte (a process referred to as potential shock), which led to the formation of a through-hole $RuO_2$-doped $TiO_2$ nanotube membrane without significant loss of the $RuO_2$ catalyst. XPS results confirmed that the doped Ru metal was converted into $RuO_2$ as the potential shock voltage increased. Further increases in the potential shock voltage led to the formation of $RuO_x/Ru$ in the $TiO_2$ nanotubes. All of our results clearly showed that a through-hole catalyst-doped $TiO_2$ nanotube membrane can be produced by a sequence consisting of single-step anodization and the potential shock process.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.301.2-301.2
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• 2016

Metal-oxide thin-film transistors (TFTs) have gained a considerable interest in transparent electronics owing to their high optical transparency and outstanding electrical performance even in an amorphous state. Also, these metal-oxide materials can be solution-processed at a low temperature by using deep ultraviolet (DUV) induced photochemical activation allowing facile integration on flexible substrates [1]. In addition, high-dielectric constant (k) inorganic gate dielectrics are also of a great interest as a key element to lower the operating voltage and as well as the formation of coherent interface with the oxide semiconductors, which may lead to a considerable improvement in the TFT performance. In this study, we investigated the electrical properties of solution-processed high-k strontium-doped AlOx (Sr-AlOx) gate dielectrics. Using the Sr-AlOx as a gate dielectric, indium-gallium-zinc oxide (IGZO) TFTs were fabricated and their electrical properties are analyzed. We demonstrate IGZO TFTs with a 10-nm-thick Sr-AlOx gate dielectric which can be operated at a low voltage (~5 V).

• Journal of the Korean Ceramic Society
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• v.40 no.8
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• pp.725-729
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• 2003

The fluorine doping along with heavy metal oxides remarkably raised the $^3$H$_4$ lifetime and the quantum efficiency in Tm$^{3+}$-doped silicate glasses. 29 mol% of fluorine substitution for oxygen in 70SiO$_2$-15Pbo-12ZnO-3KO$_{1}$2/ glass raised $^3$H$_4$ lifetime to 193 $mutextrm{s}$. Refractive indices were raised by heavy metal oxide substitution, but hardly changed by fluorine substitution. The fluorine doping changed the local structure around Tm$^{3+}$ions, then low energy vibrations related to fluorine are considered to largely reduce the multi-phonon relaxation rates in the oxyfluoride silicate glasses. The $^3$H$_4$ lifetimes and absorption and emission spectra of Tm$^{3+}$doped silicate and oxyfluoride silicate glasses are reported, and Judd-Ofelt calculation results are discussed in this paper.

• Journal of the Korean Ceramic Society
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• v.38 no.10
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• pp.871-875
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• 2001

Cobalt silicidation at sidewall spacer edge of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) with post annealing treatment for capacitor forming process has been investigated as a function of dopant species. Cobalt silicidation of nMOSFET with n-type Lightly Doped Drain (LDD) and pMOSFET with p-type LDD produces a well-developed cobalt silicide with its lateral growth underneath the sidewall spacer. In case of pMOSFET with n-type LDD, however, a void is formed at the sidewall spacer edge with no lateral growth of cobalt silicide. The void formation seems to be due to a retarded silicidation process at the LDD region during the first Rapid Thermal Annealing (RTA) for the reaction of Co with Si, resulting in cobalt mono silicide at the LDD region. The subsequent second RTA converts the cobalt monosilicide into cobalt disilicide with the consumption of Si atoms from the Si substrate, producing the void at the sidewall spacer edge in the Si region. The void formed at the sidewall spacer edge serves as a resistance in the current-voltage characteristics of the pMOSFET device.

• Bulletin of the Korean Chemical Society
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• v.31 no.1
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• pp.140-145
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• 2010

The simultaneous detection of Cd (II), Pb (II), Cu (II), and Hg (II) ions in aqueous medium using a BDD electrode with DPASV is described. XPS was used to characterize the chemical states of trace metal ions deposited on the BDD electrode surface. Experimental parameters that affect response, such as pH, deposition time, deposition potential, and pulse amplitude were carefully optimized. The detection limits for Cd (II), Pb (II), Cu (II), and Hg (II) ions were 3.5 ppb, 2.0 ppb, 0.1 ppb and 0.7 ppb, respectively. The application of the BDD electrode on the electrochemical pretreatment for the simultaneous metal detection in the dye waste water was also investigated.

• Korean Journal of Materials Research
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• v.20 no.5
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• pp.257-261
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• 2010

A non-volatile resistive random access memory (RRAM) device with a Cr-doped $SrZrO_3/SrRuO_3$ bottom electrode heterostructure was fabricated on $SrTiO_3$ substrates using pulsed laser deposition. During the deposition process, the substrate temperature was $650^{\circ}C$ and the variable ambient oxygen pressure had a range of 50-250 mTorr. The sensitive dependences of the film structure on the processing oxygen pressure are important in controlling the bistable resistive switching of the Cr-doped $SrZrO_3$ film. Therefore, oxygen pressure plays a crucial role in determining electrical properties and film growth characteristics such as various microstructural defects and crystallization. Inside, the microstructure and crystallinity of the Cr-doped $SrZrO_3$ film by oxygen pressure were strong effects on the set, reset switching voltage of the Cr-doped $SrZrO_3$. The bistable switching is related to the defects and controls their number and structure. Therefore, the relation of defects generated and resistive switching behavior by oxygen pressure change will be discussed. We found that deposition conditions and ambient oxygen pressure highly affect the switching behavior. It is suggested that the interface between the top electrode and Cr-doped $SrZrO_3$ perovskite plays an important role in the resistive switching behavior. From I-V characteristics, a typical ON state resistance of $100-200\;{\Omega}$ and a typical OFF state resistance of $1-2\;k{\Omega}$, were observed. These transition metal-doped perovskite thin films can be used for memory device applications due to their high ON/OFF ratio, simple device structure, and non-volatility.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.5
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• pp.288-293
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• 2017

$Fe_2O_3$ is one of the most important metal oxides for gas sensing applications because of its low cost and high stability. It is well-known that the shape, size, and phase of $Fe_2O_3$ have a significant influence on its sensing properties. Many reports are available in the literature on the use of $Fe_2O_3$-based sensors for detecting gases, such as $NO_2$, $NH_3$, $H_2S$, $H_2$, and CO. In this paper, we investigated the gas-sensing performance of a Pt-doped ${\varepsilon}$-phase $Fe_2O_3$ gas sensor. Pt-doped $Fe_2O_3$ nanoparticles were synthesized by a Sol-Gel method. Platinum, known as a catalytic material, was used for improving gas-sensing performance in this research. The gas-response measurement at $300^{\circ}C$ showed that $Fe_2O_3$ gas sensors doped with 3%Pt are selective for $NO_2$ gas and exhibita maximum response of 21.23%. The gas-sensing properties proved that $Fe_2O_3$ could be used as a gas sensor for nitrogen dioxide.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.3
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• pp.271-277
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• 2004

A Si(Silicon) MEMS(Micro Electro Mechanical System) package using a doped lossy Si carrier for CPW(Coplanar Waveguide) MMICs(Microwave and Millimeter-wave Integrated Circuits) is proposed in order to reduce parasitic problems of leakage, coupling and resonance. The proposed chip-carrier scheme is verified by fabricating and measuring a GaAs CPW on the two types of carriers(conductor-back metal, doped lossy Si) in the frequency from 0.5 to 40 ㎓. The proposed MEMS package using the lightly doped lossy(15 Ω$.$cm) Si chip-carrier and the HRS(High Resistivity Silicon, 15 ㏀$.$cm) shows the optimized loss and parasitic problems-free since the doped lossy Si-carrier effectively absorbs and suppresses the resonant leakage. The Si MEMS package for CPW MMICs has an insertion loss of only - 2.0 ㏈ and a power loss of - 7.5 ㏈ at 40 ㎓.