• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.563-575
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• 2006

Ti(C,N) films are synthesized by pulsed DC plasma enhanced chemical vapor deposition (PEMOCVD) using metal-organic compounds of tetrakis diethylamide titanium at $200-300^{\circ}C$. To compare plasma parameter, in this study, $H_2$ and $He/H_2$ gases are used as carrier gas. The effect of $N_2\;and\;NH_3$ gases as reactive gas is also evaluated in reduction of C content of the films. Radical formation and ionization behaviors in plasma are analyzed in-situ by optical emission spectroscopy (OES) at various pulsed bias voltages and gas species. He and $H_2$ mixture is very effective in enhancing ionization of radicals, especially for the $N_2$. Ammonia $(NH_3)$ gas also highly reduces the formation of CN radical, thereby decreasing C content of Ti(C, N) films in a great deal. The microhardness of film is obtained to be $1,250\;Hk_{0.01}\;to\;1,760\;Hk_{0.01}$ depending on gas species and bias voltage. Higher hardness can be obtained under the conditions of $H_2\;and\;N_2$ gases as well as bias voltage of 600 V. Hf(C, N) films were also obtained by pulsed DC PEMOCYB from tetrakis diethyl-amide hafnium and $N_2/He-H_2$ mixture. The depositions were carried out at temperature of below $300^{\circ}C$, total chamber pressure of 1 Torr and varying the deposition parameters. Influences of the nitrogen contents in the plasma decreased the growth rate and attributed to amorphous components, to the high carbon content of the film. In XRD analysis the domain lattice plain was (111) direction and the maximum microhardness was observed to be $2,460\;Hk_{0.025}$ for a Hf(C,N) film grown under -600 V and 0.1 flow rate of nitrogen. The optical emission spectra measured during PEMOCVD processes of Hf(C, N) film growth were also discussed. $N_2,\;N_2^+$, H, He, CH, CN radicals and metal species(Hf) were detected and CH, CN radicals that make an important role of total PEMOCVD process increased carbon content.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• Journal of Industrial Convergence
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• v.20 no.12
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• pp.79-85
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• 2022

Recently, a smartphone manufactured on a flexible substrate has been released as an electronic device, and research on a stretchable electronic device is in progress. In this paper, a silicon-based stretchable material is made and used as a substrate to implement and evaluate an optical sensor device using oxide semiconductor. To this end, a substrate that stretches well at room temperature was made using a silicone-based solution rubber, and the elongation of 350% of the material was confirmed, and optical properties such as reflectivity, transmittance, and absorbance were measured. Next, since the surface of these materials is hydrophobic, oxygen-based plasma surface treatment was performed to clean the surface and change the surface to hydrophilicity. After depositing an AZO-based oxide film with vacuum equipment, an Ag electrode was formed using a cotton swab or a metal mast to complete the photosensor. The optoelectronic device analyzed the change in current according to the voltage when light was irradiated and when it was not, and the photocurrent caused by light was observed. In addition, the effect of the optical sensor according to the folding was additionally tested using a bending machine. In the future, we plan to intensively study folding (bending) and stretching optical devices by forming stretchable semiconductor materials and electrodes on stretchable substrates.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.3
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• pp.18-23
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• 2024

Nanoimprint lithography (NIL) is widely used to form structures ranging from micro to nanoscale due to its advantage of generating high-resolution patterns at a low process cost. However, most NIL processes require the use of imprint resists and external elements such as ultraviolet light or heat, necessitating additional post-processes like etching or metal deposition to pattern the target material. Furthermore, patterning on flexible and/or non-planar films presents significant challenges. This study introduces an extreme pressure imprint lithography (EPIL) process that can form micro-/nano-scale patterns on the surface of a flexible rubber magnet composite (RMC) film at room temperature without an etching process. The EPIL technique can form ultrafine structures over large areas through the plastic deformation of various materials, including metals, polymers, and ceramics. In this study, we demonstrate the process and outcomes of creating a variety of periodic structures with diverse pattern sizes and shapes on the surface of a flexible RMC composed of strontium ferrite and chlorinated polyethylene. The EPIL process, which allows for the precise patterning on the surface of RMC materials, is expected to find broad applications in the production of advanced electromagnetic device components that require fine control and changes in magnetic orientation.

• Journal of the Korean Ceramic Society
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• v.43 no.2 s.285
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• pp.98-105
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• 2006

YBCO film was synthesized by using a new approach to the TFA-MOD method. In the fabrication process, $Y_2Ba_1Cu_1O_x\;and\;Ba_3Cu_5O_8$ powders were used as precursors (the so called '211 process'), instead of Y-, Ba-, and Cu-based acetates, and dissolved in trifluoroacetic acid followed by calcining and firing heat treatment. Consequently, we successfully fabricated YBCO film and evaluated the phase formation, texture evolution, and critical properties as a function of the calcining and firing temperature and humidity, in order to explore its possible application in coated conductor fabrication. The films were calcined at $430-460^{\circ}C$ and then fired at $750-800^{\circ}C\;in\;a\;0-20\%$ humidified $Ar-O_2$ atmosphere. We observed that $BaF_2$ phase was effectively reduced and that a sharp and strong biaxial texture formed under humidified atmosphere leading to increased critical properties. In addition, we found that the microstructure varied significantly with the firing temperature: the grain grew further, the film became denser, and the degree of texture and phase purity varied as the firing temperature increased. For the film fired at $775^{\circ}C$ after calcining at $460^{\circ}C$, the critical current was obtained to be 39 A/cm-width (corresponding critical current density is $2.0\;MA/cm^2$ which was probably attributed to such factors as the enhanced phase purity and out-of-plane texture, the moderate film density and grain size, and crack-free surface.

• Applied Chemistry for Engineering
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• v.7 no.6
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• pp.1192-1203
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• 1996

$Al_2O_3-TiO_2$ composite oxide adsorbents which could be applied in high-temperature water were prepared by hydrolysis of aluminum and titanium alkoxide. The prepared adsorbents were calcined at $600{\sim}1400^{\circ}C$ and in order to investigate the various properties - the transition of crystals, thermal properties, and specific surface area, X-ray diffractometry, thermal analysis, FT-IR, SEM and BET method were employed. And the $Co^{2+}$ adsorption characteristics of these adsorbents in high-temperature water were investigated by batch adsorption experiment in a stirred autoclave. Since the adsorption of $Co^{2+}$ on the $Al_2O_3-TiO_2$ adsorbents was irreversible endothermic in the temperature range of $150{\sim}250^{\circ}C$, the standard enthalpy changes of 26, 43, and 80 mol% of $TiO_2$ on $Al_2O_3$ were in the range of $16.5{\sim}26.0kJ{\cdot}mol^{-1}$. The adsorbent of 26 mol% of $TiO_2$ on $Al_2O_3$ which was calcined at $600^{\circ}C$ for 2 hours showed the adsorption amount of $0.1674meq{\cdot}g^{-1}$ in the high temperature water at $250^{\circ}C$.

• Journal of Korea Foundry Society
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• v.11 no.6
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• pp.475-481
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• 1991

In this study the fabrication technology and mechanical properties of AC8A/$Al_2O_3$ Composites by squeeze casting process were investigated to develope for application as the piston materials that require good friction, wear resistance, and thermal stability. AC8A/$Al_2O_3$ composistes without a porosity and the break of preform were fabricated at the melt temperature of $740^{\circ}C$, the preform temperature of $500^{\circ}C$, and mold temperature of $400^{\circ}C$ under the applied pressure of $1200kg/cm^2$ as the results of the observation of microstructures. As the results of this study, the tensile strength of AC8A/$Al_2O_3$ composites was not increased linearly with $Al_2O_3$ volume fraction and so it seemed not to agree with the rule of mixture, which had been used often in metal matrix composite. Also the tensile strength after thermal fatigue test was little different from that before the test. Consequently it was thought that AC8A/$Al_2O_3$ composites fabricated under our experimental conditions had a good thermal stability and subsequently a good interface bonding. Wear rate(i.e., volume loss per unit sliding distance) of AC8A/$Al_2O_3$ composites was decreased with $Al_2O_3$ volume fraction and the sliding speed at both room temperature and $250^{\circ}C$ and so there was a good correlation between wear rate and hardness. Also the wear rate of AC/8A20% $Al_2O_3$ composities was obtained the value of $1.65cm^3/cm$ at sliding speed of 1.14m/sec as compared with about $3.0\;{\times}10^{-8}cm^3/cm$ hyereutectie Al-Si alloy(Al-16%Si-2%Cu-1%Fe-1%Ni), which applied presently for piston materials. The wear behavior of $Al_2O_3$ composites was observed to a type of abrasive wear by the SEM view of wear surface.

• Fire Science and Engineering
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• v.28 no.5
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• pp.8-13
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• 2014

The purpose of this study is to analyze the damage pattern when overcurrent is applied to a thermal magnetic type molded case circuit breaker (MCCB) using a Primary Current Injection Test System (PCITS). When an overcurrent of 150 A was applied to the PCITS for 5 seconds with the trip bar of an MCCB being damaged, it was found that the surface of the temperature control device (bimetallic strip) positioned at the right was significantly carbonized. When an overcurrent of 300 A was applied to the PCITS for 5 s under the same conditions, the entire temperature control device was deteriorated, becoming flattened and in close contact with the MCCB. When an overcurrent of 450 A was applied to the PCITS for 5 s, the coil of the temperature control device was melted and disconnected. In addition, it was observed that the contacts, the enclosure and upper cover were deformed and there was a trace of carbonization on them. When approximately 3 s had elapsed after an overcurrent of 600 A was applied, white smoke occurred inside the MCCB and a flame was radiated out, after which the overcurrent supply stopped with "phutt" (whomp) sound. It was observed that when the same type of MCCB is damaged by a general flame, the surfaces of its handle, terminal, arc divider (extinguisher) and temperature control device were carbonized uniformly. In addition, it was found that the trip bar of the operating mechanism was melted down and the metal operation pin was moved while being tripped.

• Applied Chemistry for Engineering
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• v.28 no.5
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• pp.576-580
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• 2017

In the present paper, the thermal deactivation characteristics of plate-type commercial $V_2O_5-WO_3/TiO_2$ SCR catalyst were investigated. For this purpose, the plate-type catalyst was calcined at different temperatures ranging from $500^{\circ}C$ to $800^{\circ}C$ for 3 hours. Structural and morphological changes were characterized byXRD, specific surface area, porosity, SEM-EDS and also NOx conversion with ammonia according to the calcine temperature. The NOx conversion decreased with increasing calcine temperature, especially when the catalysts were calcined at temperatures above $700^{\circ}C$. This is because the crystal phase of $TiO_2$ changed from anatase to rutile, and the $TiO_2$ grain growth and $CaWO_4$ crystal phase were formed, which reduced the specific surface area and pore volume. In addition, $V_2O_5$, which is a catalytically active material, was sublimated or vaporized over $700^{\circ}C$, and a metal mesh used as a support of the catalyst occurred intergranular corrosion and oxidation due to the formation of Cr carbide.

• Bulletin of the Korean Chemical Society
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• v.32 no.1
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• pp.263-272
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• 2011

Highly luminescent and monodisperse InP quantum dots (QDs) were prepared by a non-organometallic approach in a non-coordinating solvent. Fatty acids with well-defined chain lengths as the ligand, a non coordinating solvent, and a thorough degassing process are all important factors for the formation of high quality InP QDs. By varying the molar concentration of indium to ligand, QDs of different size were prepared and their absorption and emission behaviors studied. By spin-coating a colloidal solution of InP QD onto a silicon wafer, InP QD thin films were obtained. The thickness of the thin films cured at 60 and $200^{\circ}C$ were nearly identical (approximately 860 nm), whereas at $300^{\circ}C$, the thickness of the thin film was found to be 760 nm. Different contrast regions (A, B, C) were observed in the TEM images, which were found to be unreacted precursors, InP QDs, and indium-rich phases, respectively, through EDX analysis. The optical properties of the thin films were measured at three different curing temperatures (60, 200, $300^{\circ}C$), which showed a blue shift with an increase in temperature. It was proposed that this blue shift may be due to a decrease in the core diameter of the InP QD by oxidation, as confirmed by the XPS studies. Oxidation also passivates the QD surface by reducing the amount of P dangling bonds, thereby increasing luminescence intensity. The dielectric properties of the thin films were also investigated by capacitance-voltage (C-V) measurements in a metal-insulator-semiconductor (MIS) device. At 60 and $300^{\circ}C$, negative flat band shifts (${\Delta}V_{fb}$) were observed, which were explained by the presence of P dangling bonds on the InP QD surface. At $300^{\circ}C$, clockwise hysteresis was observed due to trapping and detrapping of positive charges on the thin film, which was explained by proposing the existence of deep energy levels due to the indium-rich phases.