• 한국연소학회:학술대회논문집
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• 한국연소학회 2004년도 제28회 KOSCO SYMPOSIUM 논문집
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• pp.227-234
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• 2004

For gaseous fuel combustion with inherent $CO_2$ capture and low NOx emission, chemical-looping combustion(CLC) may yield great advantages of savings of energy to $CO_2$ separation and suppressing the effect on environment. In chemical-looping combustor, fuel is oxidized by metal oxide medium (oxygen carrier particle) in a reduction reactor. Reduced particles are transported to oxidation reactor and oxidized by air and recycled to reduction reactor. The fuel and the air are never mixed, and the gases from reduction reactor, $CO_2$ and $H_2O$, leave the system as separate stream. The $H_2O$ can be easily separated by condensation and pure $CO_2$ is obtained without any loss of energy for separation. The purpose of this study is to demonstrate inherent $CO_2$ separation and no NOx emission and to confirm high $CO_2$ selectivity, no side reaction (i.e., carbon deposition, hydrogen generation) by continuous reduction and oxidation experiment in a 50kWtb chemical-looping combustor. NiO/bentonite particle was used as a bed material and $CH_4$ and air were used as reacting gases for reduction and oxidation respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1284-1287
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• 2007

Titanium dioxide ($TiO_2$) is promising candidate for fabricating blocking layer of gate dielectrics in non-volatile memory (NVM). In this work, we investigated $TiO_2$ as high dielectric constant material instead of silicon dioxide ($SiO_2$), which is generally used as blocking layer for NVM.

• 한국재료학회지
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• 제13권5호
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• pp.309-312
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• 2003

Tin dioxide($_SnO2$) thin films were deposited on alumina substrate by metal-organic chemical vapor deposition (MOCVD) as a function of temperature and time. Thin films were fabricated from di-n-butyltin diacetate as a precursor and oxygen as an oxidation. The microstructure of deposited films was characterized by X-ray diffraction and field emission scanning electron microscopy(FE-SEM). The thickness was linearly increased with deposition time and $SnO_2$structure was found from $375^{\circ}C$ for the deposition time of 32 min. The maximum sensitivity to 500ppm CO gas was observed for the specimens deposited at $375^{\circ}C$ for 2 min at the operating temperature of $350^{\circ}C$. Gas sensitivity to CO increased with decreasing the film thickness. The sensing properties of response time, recovery and sensitivity of CO were changed with variations of substrate temperature and time.

• 전자공학회논문지D
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• 제35D권7호
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• pp.72-78
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• 1998

This paper is focused on the fabrication of reliable novel antifuse, which could operate at low voltage along with the improvement in OFF and ON-state properties. The fabricated antifuse consists of Al/BaTi$_{2}$O$_{3}$/SiO$_{2}$/TiW-silicide structure. Through the systematic analyses for bottom metal and the intermetallic insulator, material and electri cproperties were investiaged. TiW-silicide as the bottom electrode had smooth surface with average roughness of 11.angs. at 10X10.mu.m$^{2}$ and was bing kept as-deposited SiO$_{2}$ film stable. Amorphous BaTi$_{2}$O$_{3}$ film as the another insulator was chosen because of its low breakdown strength (2.5MV/cm). breakdown voltage of antifuse is remarkably reduced by using BaTi$_{2}$O$_{3}$ film, and leakage current of that maintained low level due to the SiO$_{2}$ film. Low ON-resistance (46.ohm./.mu.m$^{2}$) and low programming voltage(9.1V) can be obtained in theses antifuses with 220.angs. double insulator layer and 19.6X10$^{-6}$ cm$^{2}$ area, while keeping sufficient OFF-state reliability (less than 1nA).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.364.2-364.2
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• 2014

Magnesium oxide (MgO) thin films have attracted great scientific and technological interest in recent decades. Because of its distinguished properties such as a wide band gap (7.2 eV), a low dielectric constant (9.8), a low refractive index, an excellent chemical, and thermal stability (melting point=$2900^{\circ}C$), it is widely used as inorganic material in diverse areas such as fire resistant construction materials, optical materials, protective layers in plasma display panels, buffer layers of multilayer electronic/photonic devices, and perovskite ferroelectric thin films. Precursor used in the ALD requires volatility, stability, and low deposition temperature. Precursors using a heteroleptic ligands with different reactivity have advantage of selective reaction of the heteroleptic ligands on substrate during ALD process. In this study, we have synethesized new heteroleptic magnesium precursors ${\beta}$-diketonate and aminoalkoxide which have been widely used for the development of precursor because of the excellent volatility, chelating effects by increasing the coordination number of the metal, and advantages to synthesize a single precursor. A newly-synthesized Mg(II) precursor was adopted for growing MgO thin films using ALD.

• 한국재료학회지
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• 제9권2호
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• pp.124-131
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• 1999

Copper film, which is expected to be used as interconnection material for 1 giga DRAM integrated circuits was deposited on hole and trench patterns by Metal Organic Chemical Vapor Deposition(MOCVD) method. After a reflow process, contact and L/S patterns were filled by copper and the characteristics of the Cu reflow process were investigated. When deposited Cu films were reflowed, grain growth and agglomeration of Cu have occurred in surfaces and inner parts of patterns as well as complete filling in patterns. Also Cu thin oxide layers were formed on the surface of Cu films reflowed in $O_2$ambient. Agglomeration and oxidation of Cu had bad influence on the electrical properties of Cu films especially, therefore, their removal and prevention were studied simultaneously. As a pattern size is decreased, preferential reflow takes place inside the patterns and this makes advantages in filling patterns of deep submicron size completely. With Cu reflow process, we could fill the patterns with the size of deep sub-micron and it is expected that Cu reflow process could meet the conditions of excellent interconnection for 1 giga DRAM device when it is combined with Cu MOCVD and CMP process.

• 전력전자학회논문지
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• 제22권4호
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• pp.297-304
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• 2017

The purpose of this paper is to analyze losses because of switching devices and the secondary side circuit diodes of 500 W full bridge dc-dc converter by applying gallium nitride (GaN) field-effect transistor (FET), which is one of the wide band gap devices. For the detailed device analysis, we translate the specific resistance relation caused by the GaN FET material property into algebraic expression, and investigate the influence of the GaN FET structure and characteristic on efficiency and system specifications. In addition, we mathematically compare the diode rectifier circuit loss, which is a full bridge dc-dc converter secondary side circuit, with the synchronous rectifier circuit loss using silicon metal-oxide semiconductor (Si MOSFET) or GaN FET, which produce the full bridge dc-dc converter analytical value validity to derive the final efficiency and loss. We also design the heat sink based on the mathematically derived loss value, and suggest the heat sink size by purpose and the heat divergence degree through simulation.

• 한국막학회:학술대회논문집
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• 한국막학회 1996년도 제4회 하계분리막 Workshop (초순수 제조와 막분리 공정)
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• pp.121-147
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• 1996

Since 1980, the water quality of ultra-pure water has been rapidly improved, and presently ultra-pore water producing equipment for 64Mbit is in operation. Table 1 shows the degree of integration of DRM and required water quality exlmple. The requirements of the ultra-pure water for 64Mbit are resistivity: 18.2 MQ/cm or higher, number of particulates: 1 pc/ml or less (0.05 $\mu$m or larger). bacteria count: 0.1 pc/l or less. TOC (Total Organic Carbon, index of organic snbstance) : 1ppb or less, dissolved oxygen: 5ppb or less, silica: 0.5ppb or less, heavy metal ions: 5ppb or less. The effect of metals on the silicon wafer has been well known, and recently it has been reported that the existence of organic substance in ultra-pure water is closely related to the device defect, drawing attention. It is reported that if organic substance sticks to the natural oxidation film, the oxide film remaims on the organic substance attachment in the hydrofluoric acid treatment (removal of natural oxidation film). The organic substance forms film on the silicon wafer, and harmful elements such as metals and N.P.S., components contained in the organic substance and the bad effect due to the generatinn of silicon carbide cannot be forgotten. In order to remove various impurities in raw water, many technological develoments (membrane, ion exchange, TOC removal, piping material, microanalysis, etc.) have been made with ultra-pure water producing equipment and put to practical use. In this paper, technologies put to practical use in recent ultra-pure vater producing equimeut are introduced.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.385-385
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• 2012

A two terminal N+/P/N+ junction device to replace the conventional selective transistor was studied as a bilateral switching device for spin transfer torque (STT) MRAM based on 3D device simulation. An N+/P/N+ junction structure with $30{\times}30nm$ area requires bi-directional current flow enough to write a data by a drain induced barrier lowering (DIBL) under a reverse bias at N+/P (or P/N+ junction), and high current on/off ratio of 106. The SiGe materials are widely used in hetero-junction bipolar transistors, bipolar compensation metal-oxide semiconductors (BiCMOS) since the band gap of SiGe materials can be controlled by changing the fraction and the strain epilayers, and the drift mobility is increased with the increasing Ge content. In this work, N+/P/N+ SiGe material based junction provides that drive current is increased from 40 to $130{\mu}A$ by increased Ge content from 10~80%. When Ge content is about 20%, the drive current density of SiGe device substantially increased to 2~3 times better than Si-based junction device in case of 28 nm P length, which is sufficient current to operation of STT-MRAM.

• 한국식품저장유통학회:학술대회논문집
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• 한국식품저장유통학회 2003년도 제23차 추계총회 및 국제학술심포지움
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• pp.139.2-139
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• 2003

The packaging and irradiation effects on the volatile compounds of red pepper powder were investigated. The red pepper powder (Capsicum annuum) was prepackaged in vacuum (PE/Nylon film bag), and irradiated with the dose of 0, 3, 5 or 7 kGy at 0$^{\circ}C$. The odor of irradiated red pepper powder was classified into 4 groups (0, 3, 5, and 7 kGy) by electronic nose using metal oxide sensors, and the volatile compounds developed by irradiation were analyzed by GC-MS along with solid phase microextraction. Hexanoic acid and tetramethyl pyrazine, which were found in red pepper powder of 0 kGy, disappeared in irradiated red pepper powder. Further, 1,3-bis(1,1-dimethylethyl)-benzene was detected by GC-MS as a new developed volatile compound in irradiated red pepper, and this compound was identified to be originated from packaging material not from red pepper powder. This study showed that off-odor from packaging materials was responsible for the volatiles produced from dried food treated with irradiation.