• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.104-104
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• 2009

Critical dimensions has rapidly shrunk to increase the degree of integration and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate insulator layer and the low conductivity characteristic of poly-silicon. To cover these faults, the study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$ and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-silicon gate is not compatible with high-k materials for gate-insulator. To integrate high-k gate dielectric materials in nano-scale devices, metal gate electrodes are expected to be used in the future. Currently, metal gate electrode materials like TiN, TaN, and WN are being widely studied for next-generation nano-scale devices. The TaN gate electrode for metal/high-k gate stack is compatible with high-k materials. According to this trend, the study about dry etching technology of the TaN film is needed. In this study, we investigated the etch mechanism of the TaN thin film in an inductively coupled plasma (ICP) system with $O_2/BCl_3/Ar$ gas chemistry. The etch rates and selectivities of TaN thin films were investigated in terms of the gas mixing ratio, the RF power, the DC-bias voltage, and the process pressure. The characteristics of the plasma were estimated using optical emission spectroscopy (OES). The surface reactions after etching were investigated using X-ray photoelectron spectroscopy (XPS) and auger electron spectroscopy (AES).

• 한국재료학회지
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• 제20권6호
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• pp.319-325
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• 2010

3-D IC integration enables the smallest form factor and highest performance due to the shortest and most plentiful interconnects between chips. Direct metal bonding has several advantages over the solder-based bonding, including lower electrical resistivity, better electromigration resistance and more reduced interconnect RC delay, while high process temperature is one of the major bottlenecks of metal direct bonding because it can negatively influence device reliability and manufacturing yield. We performed quantitative analyses of the interfacial properties of Al-Al bonds with varying process parameters, bonding temperature, bonding time, and bonding environment. A 4-point bending method was used to measure the interfacial adhesion energy. The quantitative interfacial adhesion energy measured by a 4-point bending test shows 1.33, 2.25, and $6.44\;J/m^2$ for 400, 450, and $500^{\circ}C$, respectively, in a $N_2$ atmosphere. Increasing the bonding time from 1 to 4 hrs enhanced the interfacial fracture toughness while the effects of forming gas were negligible, which were correlated to the bonding interface analysis results. XPS depth analysis results on the delaminated interfaces showed that the relative area fraction of aluminum oxide to the pure aluminum phase near the bonding surfaces match well the variations of interfacial adhesion energies with bonding process conditions.

• Transactions on Electrical and Electronic Materials
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• 제17권5호
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• pp.302-305
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• 2016

In this paper, a low on-resistance and high current driving capability trench gate power metal-oxide-semiconductor field-effect transistor (MOSFET) incorporating a current sensing feature is proposed and evaluated. In order to realize higher cell density, higher current driving capability, cost-effective production, and higher reliability, self-aligned trench etching and hydrogen annealing techniques are developed. While maintaining low threshold voltage and simultaneously improving gate oxide integrity, the double-layer gate oxide technology was adapted. The trench gate power MOSFET was designed with a 0.6 μm trench width and 3.0 μm cell pitch. The evaluated on-resistance and breakdown voltage of the device were less than 24 mΩ and 105 V, respectively. The measured sensing ratio was approximately 70:1. Sensing ratio variations depending on the gate applied voltage of 4 V ~ 10 V were less than 5.6%.

• E2M - 전기 전자와 첨단 소재
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• 제10권3호
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• pp.210-216
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• 1997

The th ermal and optical properties of multicomponent oxide glass optical fiber by adding heavy metal oxide Ga$_{2}$O$_{3}$(0-20wt%) were investigated. The fiber samples were made by the method of rod in tube. The optical loss of fiber was measured in 0.3-1.8.mu.m wavelength region. As Ga$_{2}$O$_{3}$ increased up to 20wt%, the transition and softening temperature of bulk glass were increased from 495.deg. C to 579.deg. C and from 548.deg. C to 641.deg. C, respectively. Whereas the thermal expansion coefficient was decreased from 102 to 79.1x10$^{-7}$ /.deg. C. The refractive index was increased from 1.621 to 1.665, and IR cut-off wavelength was enlarged from 4.64.mu.m to 6.1.mu.m. The optical loss of fiber was remarkably decreased in 1.146.mu.m-1.8.mu.m wavelength region.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.295-295
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• 2013

Supercapacitors with higher energy and power density are attracting growing attention for their wide range of potential applications such as portable electronic equipments, hybrid vehicle and cellular devices. In various classes of materials for supercapacitors, the redox pseudocapacitive materials such as conducting polymers and metal oxides have been most widely studied recently. The nanostructuring of the electrode surface has also been focused on since it can provide large surface area and consequently easy diffusion of ions in the capacitors. Among the active materials, in this work, we have used polyaniline (PANi) and manganese oxide ($MnO_2$). PANi is one of the promising electrode and active materials due to its desirable properties such as high electrochemical activity, high doping level and stability. $MnO_2$ is also widely studied material for supercapacitors since it is relatively cheap and environmentally friendly. In this work, we fabricated PANi hollow nanospheres by polymerizing aniline monomers on the polystyrene (PS) nanospheres and then dissolving the inner PS spheres. This nanostructuring of the PANi surface can provide large surface area and hence easy diffusion of electrolyte ions. We also incorporated $MnO_2$ nanoparticles into the PANi hollow nanospheres and investigated its electrochemical properties. It is expected that the combination of these two active materials with slightly different working potential windows show synergetic effects such as broader working potential range and enhanced specific capacitance.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.389-392
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• 2009

Metal oxides have been proposed as an alternative channel material to hydrogenated amorphous silicon in thin film transistors (TFTs) because their higher mobility and stability make them suitable for transistor active layers. Thin films of indium zinc oxide (IZO) were deposited using a High Target Utilization Sputtering (HiTUS) system on various dielectrics, some of which were also deposited with the HiTUS. Investigations into bottom-gated IZO TFTs have found mobilities of 8 $cm^2V\;^1s^{-1}$ and switching ratios of $10^6$. There is a variation in the threshold voltage dependent on both oxygen concentration, and dielectric choice. Silica, alumina and silicon nitride produced stable TFTs, whilst hafnia was found to break down as a result of the IZO.

• 공업화학
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• 제25권3호
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• pp.242-248
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• 2014

정보 통신 분야의 발전에 따라 기존의 전자 기기들은 평면성을 벗어나 투명 유연하고 깨지지 않는 특성이 요구되고 있다. 이러한 부가적인 특성을 갖춘 기기들의 제조를 위해서는 전극의 투명성과 유연성을 동시에 갖고 있어야 하지만, 현재 가장 대표적으로 이용되는 투명전극인 ITO (Indium Tin Oxide)는 유연하지 못하다는 단점과 자원적인 한계를 갖고 있다. 이에 따라 ITO의 한계를 극복하기 위해 다양한 물질들을 이용한 대체 재료 개발이 활발히 연구되고 있으며 대체 물질들의 복합화를 통해 더 향상된 물성을 발현시키기 위한 연구가 진행되고 있다. 본 총설에서는 ITO의 한계를 극복하고 투명전극으로서의 응용 가능한 대체 물질들에 대한 연구 현황을 정리하였다.

• Nuclear Engineering and Technology
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• 제55권5호
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• pp.1892-1900
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• 2023

A protective oxide layer forms on the material surfaces of a Nuclear Power Plant during operation due to high temperature. These oxides can host radionuclides, the activated corrosion products of fission products, resulting in decommissioning workers' exposure. These deposited oxides are iron oxides such as Fe₃O₄, Fe₂O₃ and mixed ferrites such as nickel ferrites, chromium ferrites, and cobalt ferrites. Developing a new chemical decontamination technology for domestic CANDU-type reactors is challenging due to variations in oxide compositions from different structural materials in a Pressurized Water Reactor (PWR) system. The Korea Atomic Energy Research Institute (KAERI) has already developed a chemical decontamination process for PWRs called 'HyBRID' (Hydrazine-Based Reductive metal Ion Decontamination) that does not use organic acids or organic chelating agents at all. As the first step to developing a new chemical decontamination technology for the Pressurized Heavy Water Reactor (PHWR) system, we investigated magnetite dissolution behaviors in various HyBRID inorganic acidic solutions to assess their applicability to the PHWR reactor system, which forms a thicker oxide film.

• 상하수도학회지
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• 제33권4호
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• pp.251-258
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• 2019

The physical treatment such as chemical precipitation or adsorption was usually added after biological treatment in wastewater treatment process since it was enforced to reduce the concentration of phosphate for wastewater effluent to 0.2 mg/L as P which was well known as one of main nutrient causing eutrophication in waterbody. Therefore, the new material functioned for both adsorption and disinfection was prepared with Fe and Cu, and $TiO_2$, respectively, by changing the ratio of concentration referred to tri-metal (TM). According to SEM-EDS, $TiO_2$ was 30~40% composition for any TM regardless of any synthesis condition. However, the ratio of composition for Fe and Cu was dependent on the initial Fe and Cu concentration, respectively. The removal efficiency of phosphate was obtained to 15% at low initial concentration and the maximum uptake (Q) was calculated to ~11 mg/g through Langmuir isotherm model using TM1 which was synthesized at 1000 mg/L, 1000 mg/L, and 2 g (10 g/L) for $Fe(NO_3)_3$, $Cu(NO_3)_2$, $TiO_2$, respectively. In disinfection test, the efficiency of virus removal using TM was increased with increase of dosage of TM and can be reached 98% at 0.2 g.

• 마이크로전자및패키징학회지
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• 제30권4호
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• pp.32-43
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• 2023

저항 변화 메모리 소자(RRAM)는 저항 변화 특성을 기반으로 빠른 동작 속도, 간단한 소자 구조 및 고집적 구조의 구현을 통해 많은 양의 데이터를 효율적으로 처리할 수 있는 차세대 메모리 소자로 주목받고 있다. RRAM의 작동원리 중 하나로 알려진 interface type의 저항 변화 특성은 forming process를 수반하지 않고 소자 크기를 조절하여 낮은 전류에서 구동이 가능하다는 장점을 갖는다. 그 중에서도 전이 금속 산화물 기반 RRAM 소자의 경우, 정확한 물질의 조성 조절 방법과 소자의 신뢰성 및 안정성과 같은 메모리 특성을 향상시키기 위해 다양한 연구가 진행 중에 있다. 본 논문에서는 이종 원소의 도핑, 다층 박막의 형성, 화학적 조성 조절 및 표면 처리 등의 방법을 이용하여 interface type 저항 변화 특성의 저하를 방지하고 소자 특성을 향상시키기 위한 다양한 방법을 소개하고자 한다. 이를 통해 향상된 저항 변화 특성을 기반으로 한 고효율 차세대 비휘발성 메모리 소자의 구현 가능성을 제시한다.