Acknowledgement
이 성과는 정부(과학기술정보통신부)의 재원으로 한국연구재단의 지원을 받아 수행된 연구임(No. RS-2023-00208801).
References
- S. Petrenko, "Big Data Technologies for Monitoring of Computer Security: A Case Study of the Russian Federation", Springer International Publishing, 1-249, New York (2018).
- Y. Zhang, P. Qu, Y. Ji, W. Zhang, G. Gao, G. Wang, and L. Shi, "A system hierarchy for brain-inspired computing", Nat., 586(7829), 378-384 (2020). https://doi.org/10.1038/s41586-020-2782-y
- Y. Zhong, J. Tang, X. Li, B. Gao, H. Qian, and H. Wu, "Dynamic memristor-based reservoir computing for high-efficiency temporal signal processing", Nat. commun., 12(1), 408 (2021).
- A. Sebastian, M. Le Gallo, R. Khaddam-Aljameh, and E. Eleftheriou, "Memory devices and applications for in-memory computing", Nat. Nanotechnol., 15(7), 529-544 (2020). https://doi.org/10.1038/s41565-020-0655-z
- K. Huang, Y. Yan, and L. Huang, "Revisiting persistent hash table design for commercial non-volatile memory", 2020 Design, Automation & Test in Europe Conference & Exhibition (DATE), France, pp. 708-713, IEEE (2020).
- K. Itoh, T. Watanabe, S. I. Kimura, and T. Sakata, "Reviews and prospects of high-density RAM technology", IEEE, 1, 13-22 (2000).
- A. Durgesh and S. L. Tripathi, "Design of Low-Power DRAM Cell Using Advanced FET Architectures", Electrical and Electronic Devices, Circuits, and Materials: Technological Challenges and Solutions, S. L. Tripathi, P. A. Alvi and U. Subramaniam, pp. 119-132, Wiley, New Jersey (2021).
- M. K. Kim, I. J. Kim, and J. S. Lee, "CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory", Sci. Adv., 7(3), 1341 (2021).
- W. Banerjee, "Challenges and applications of emerging nonvolatile memory devices", Electronics, 9(6), 1029 (2020).
- S. S. Kim, S. K. Yong, W. Kim, S. Kang, H. W. Park, K. J. Yoon, and C. S. Hwang, "Review of semiconductor flash memory devices for material and process issues", Adv. Mater., 35(43), 2200659 (2023).
- S. Yu and P. Y. Chen, "Emerging memory technologies: Recent trends and prospects", IEEE Conf. Electron Devices Solid-State Circuits, 8(2), 43-56 (2016).
- F. Zahoor, T. Z. Azni Zulkifli, and F. A. Khanday, "Resistive random access memory (RRAM): an overview of materials, switching mechanism, performance, multilevel cell (MLC) storage, modeling, and applications", Nanoscale Res. Lett., 15, 1-26 (2020). https://doi.org/10.1186/s11671-019-3237-y
- Z. Zhang, Z. Wang, T. Shi, C. Bi, F. Rao, Y. Cai, and P. Zhou, "Memory materials and devices: From concept to application", InfoMat., 2(2), 261-290 (2020). https://doi.org/10.1002/inf2.12077
- S. Bhatti, R. Sbiaa, A. Hirohata, H. Ohno, S. Fukami, and S. N. Piramanayagam, "Spintronics based random access memory: a review", Mater. Today., 20(9), 530-548 (2017). https://doi.org/10.1016/j.mattod.2017.07.007
- H. Wang and X. Yan, "Overview of resistive random access memory (RRAM): Materials, filament mechanisms, performance optimization, and prospects", Phys. Status Solidi RRL., 13(9), 1900073 (2019).
- J. Yin, W. Liao, Y. Zhang, J. Jiang, and C. Chen, "An 8kb RRAM-based nonvolatile SRAM with Pre-decoding and fast storage/restoration time", Appl. Sci., 13(1), 531 (2022). https://doi.org/10.5804/LHIJ.2022.13.1.23
- V. Milo, C. Zambelli, P. Olivo, E. Perez, M. K Mahadevaiah, O. G. Ossorio, and D. Ielmini, "Multilevel HfO2-based RRAM devices for low-power neuromorphic networks", APL Mater., 7(8) (2019).
- X. Hong, D. J. Loy, P. A. Dananjaya, F. Tan, C. Ng, and W. Lew, "Oxide-based RRAM materials for neuromorphic computing" J. Mater. Sci., 53, 8720-8746 (2018). https://doi.org/10.1007/s10853-018-2134-6
- Y. Wu, X. Wang, and W. D. Lu, "Dynamic resistive switching devices for neuromorphic computing", Semicond. Sci. Technol., 37(2), 024003 (2021).
- V. Gupta, S. Kapur, S. Saurabh, and A. Grover, "Resistive random access memory: a review of device challenges" IETE Tech. Rev., 37(4), 377-390 (2020). https://doi.org/10.1080/02564602.2019.1629341
- L. Shi, G. Zheng, B. Tian, B. Dkhil, and C. Duan, "Research progress on solutions to the sneak path issue in memristor crossbar arrays", Nanoscale Adv., 2(5), 1811-1827 (2020). https://doi.org/10.1039/D0NA00100G
- K. Jeon, J. Kim, J. J. Ryu, S. J. Yoo, C. Song, M. K. Yang, D. S. Jeong, and G. H. Kim, "Self-rectifying resistive memory in passive crossbar arrays", Nat. Commun., 12(1), 2968 (2021).
- F. Zahoor, T. Z. A. Zulkifli, and F. A. Khanday, "Resistive random access memory (RRAM): an overview of materials, switching mechanism, performance, multilevel cell (MLC) storage, modeling, and applications", Nanoscale Res. Lett.,15, 1-26 (2020). https://doi.org/10.1186/s11671-019-3237-y
- Y. Qi, C. Z. Zhao, C. Liu, Y. Fang, J. He, T. Luo, and C. Zhao, "Comparisons of switching characteristics between Ti/Al2O3/Pt and TiN/Al2O3/Pt RRAM devices with various compliance currents" Semicond. Sci. Technol., 33(4), 045003 (2018).
- C. H. Cheng, A. Chin, and H. H. Hsu, "Forming-Free SiGeOx/TiOy Resistive Random Access Memories Featuring Large Current Distribution Windows", J. Nanosci. Nanotechnol., 19(12), 7916-7919 (2019). https://doi.org/10.1166/jnn.2019.16781
- K. J. Zhou, T. C. Chang, C. Y. Lin, C. K. Chen, Y. T. Tseng, H. X. Zheng, and S. M. Sze, "Abnormal high resistive state current mechanism transformation in Ti/HfO2/TiN resistive random access memory", IEEE Electron Device Let., 41(2), 224-227 (2019). https://doi.org/10.1109/LED.2019.2961408
- C. L. Lin, C. C. Tang, S. C. Wu, P. C. Juan, and T. K. Kang, "Impact of oxygen composition of ZnO metal-oxide on unipolar resistive switching characteristics of Al/ZnO/Al resistive RAM (RRAM)", Microelectron Eng., 136, 15-21 (2015). https://doi.org/10.1016/j.mee.2015.03.027
- S. Y. Wang, D. Y. Lee, T. Y. Huang, J. W. Wu, and T. Y. Tseng, "Controllable oxygen vacancies to enhance resistive switching performance in a ZrO2-based RRAM with embedded Mo layer", Nanotechnol., 21(49), 495201 (2010).
- B. R. Lee, J. H. Park, and T. G. Kim, "Micro-light-emitting diode with n-GaN/NiO/Au-based resistive-switching electrode for compact driving circuitry", J. Alloys. Compd., 823, 153762 (2020).
- T. S. Lee, N. J. Lee, H. Abbas, H. H. Lee, T. S. Yoon, and C. J. Kang, "Compliance current-controlled conducting filament formation in tantalum oxide-based RRAM devices with different top electrodes", ACS Appl. Electron. Mater., 2(4), 1154-1161 (2020). https://doi.org/10.1021/acsaelm.0c00128
- G. Bersuker, D. Gilmer, D. Veksler, P. Kirsch, L. Vandelli, A. Padovani, L. Larcher, K. McKenna, A. Shluger, V. Iglesias, M. Porti, and M. Nafria, "Metal oxide resistive memory switching mechanism based on conductive filament properties", J. Appl. Phys. 110, 124518 (2011).
- A. Prakash and H. Hwang, "Multilevel cell storage and resistance variability in resistive random access memory", Phys. Sci. Rev., 1(6), 20160010 (2016).
- M. Wu, J. Chen, Y. Ting, C. Huang, and W. Wu, "A novel high-performance and energy-efficient RRAM device with multi-functional conducting nanofilaments", Nano Energy, 82, 105717 (2021).
- U. Russo, D. Ielmini, C. Cagli, and A. L. Lacaita, "Self-accelerated thermal dissolution model for reset programming in unipolar resistive-switching memory (RRAM) devices", IEEE Trans. Electron Devices, 56(2), 193-200 (2009). https://doi.org/10.1109/TED.2008.2010584
- Y. Syu, T. Chang, T. Tsai, Y. Hung, K. Chang, M. Tsai, M. Kao, and S. Sze, "Redox Reaction Switching Mechanism in RRAM Device with Pt/CoSiOx/TiN Structure", IEEE Electron Device Lett., 32(4), 545-547 (2011). https://doi.org/10.1109/LED.2011.2104936
- C. Chang, J. Chen, G. Huang, T. Lin, K. Tai, C. Huang, P. Yeh, and W. Wu, "Revealing conducting filament evolution in low power and high reliability Fe3O4/Ta2O5 bilayer RRAM", Nano Energy, 53, 871-879 (2018). https://doi.org/10.1016/j.nanoen.2018.09.029
- X. Hong, P. Dananjaya, S. Krishnia, W. Gan, D. Loy, F. Tan, C. Ng, and W. Lew, "A novel geometry of ECM-based RRAM with improved variability", J. Phys. D., (2018).
- E. Lim and R. Ismail, "Conduction mechanism of valence change resistive switching memory: A survey.", Electronics, 4(3), 586-613 (2015). https://doi.org/10.3390/electronics4030586
- W. Wang, Y. Li, W. Yue, S. Gao, C. Zhang, Z. Chen, and Y. Chen, "Study on multilevel resistive switching behavior with tunable ON/OFF ratio capability in forming-free ZnO QDs-based RRAM", IEEE Trans. Electron Devices, 67(11), 4884-4890 (2020). https://doi.org/10.1109/TED.2020.3022005
- X. Cao, Y. Han, J. Zhou, W. Zuo, X. Gao, L. Han, X. Pang, L. Zhang, Y. Liu, and S. Cao, "Enhanced switching ratio and long-term stability of flexible RRAM by anchoring polyvinylammonium on perovskite grains", ACS Appl. Mater. Interfaces, 11(39), 35914-35923 (2019). https://doi.org/10.1021/acsami.9b12931
- H. Wang and X. Yan, "Overview of resistive random access memory (RRAM): Materials, filament mechanisms, performance optimization, and prospects", Phys. Status Solidi RRL, 13(9), 1900073 (2019).
- J. Shin, J. Park, J. Lee, S. Park, S. Kim, W. Lee, I. Kim, D. Lee, and H. Hwang, "Effect of program/erase speed on switching uniformity in filament-type RRAM", IEEE Electron Device Lett., 32(7), 958-960 (2011). https://doi.org/10.1109/LED.2011.2147274
- H. Lv, M. Yin, P. Zhou, T. Tang, B. Chen, Y. Lin, A. Bao, and M. Chi, "Improvement of endurance and switching stability of forming-free CuxO RRAM", pp. 52-53, IEEE (2008).
- V. Gupta, S. Kapur, S. Saurabh, and A. Grover, "Resistive random access memory: a review of device challenges", IETE Tech. Rev., 37(4), 377-390 (2020). https://doi.org/10.1080/02564602.2019.1629341
- F. Zahoor, T. Zulkifli, and F. Khanday, "Resistive random access memory (RRAM): an overview of materials, switching mechanism, performance, multilevel cell (MLC) storage, modeling, and applications", Nanoscale Res. Lett., 15, 1-26 (2020). https://doi.org/10.1186/s11671-019-3237-y
- M. Ismail, C. Mahata, and S. Kim, "Electronic synaptic plasticity and analog switching characteristics in Pt/TiOx/AlOx/AlTaON/TaN multilayer RRAM for artificial synapses", Appl. Surf. Sci., 599, 153906 (2022).
- Y. Choi, M. Kim, S. Bang, T. Kim, D. Lee, K. Hong, C. Kim, S. Kim, S. Cho, and B. Park, "Insertion of Ag layer in TiN/SiNx/TiN RRAM and its effect on filament formation modeled by monte carlo simulation", IEEE Access, 8, 228720-228730 (2020). https://doi.org/10.1109/ACCESS.2020.3046300
- D. Niu, C. Xu, N. Muralimanohar, N. Jouppi, and Y. Xie, "Design trade-offs for high density cross-point resistive memory", pp. 209-214 (2012).
- R. Muenstermann, T. Menke, R. Dittmann, and R. Waser, "Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices", Adv. Mater., 22(43), 4819-4822 (2010). https://doi.org/10.1002/adma.201001872
- A. Sawa, T. Fujii, M. Kawasaki, and Y. Tokura, "Hysteretic current-voltage characteristics and resistance switching at a rectifying Ti∕ Pr0.7Ca0.3MnO3 interface", Appl. Phys. Lett., 85(18), 4073-4075 (2004). https://doi.org/10.1063/1.1812580
- A. Gismatulin, G. Kamaev, V. Kruchinin, V. Gritsenko, O. Orlov, and A. Chin, "Charge transport mechanism in the forming-free memristor based on silicon nitride", Sci. Rep., 11(1), 2417 (2021).
- Y. Wang, M. Kim, C. Lee, A. S. Chabungbam, J. Kim, J. Lee, H. S. Lee, Q. Shao, H. Sohn, and H. H. Park, "Electric field induced Mott transition and bipolar resistive switching in La2-Ti2O7-x thin film", Appl. Mater. Today, 26, 101395 (2022).
- T. Hennen, D. Bedau, J. Rupp, C. Funck, S. Menzel, M. Grobis, R. Waser, and D. Wouters, "Forming-free Mott-oxide threshold selector nanodevice showing s-type NDR with high endurance (> 1012 cycles), excellent Vth stability (5 %), fast (< 10 ns) switching, and promising scaling properties", IEEE Int. Electron Devices Meet., 8614618 (2018).
- H. Lee, P. Chen, T. Wu, Y. Chen, C. Wang, P. Tzeng, C. Lin, F. Chen, C. Lien, and M. Tsai, "Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM", IEEE Int. Electron Devices Meet., pp. 1-4 (2008).
- N. Das, S. Oh, J. Rani, S. Hong, and J. Jang, "Multilevel bipolar electroforming-free resistive switching memory based on silicon oxynitride", Appl. Sci., 10(10), 3506 (2020).
- R. Tominov, Z. Vakulov, N. Polupanov, A. Saenko, V. Avilov, O. Ageev, and V. Smirnov, "Nanoscale-resistive switching in forming-free zinc oxide memristive structures", Nanomater., 12(3), 455 (2022). https://doi.org/10.12989/OSE.2022.12.3.285
- J. Lee, J. Shin, D. Lee, W. Lee, S. Jung, M. Jo, J. Park, K. Biju, S. Kim, S. Park, and H. Hwang, "Diode-less nano-scale ZrOx/HfOx RRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications", IEEE Int. Electron Devices Meet., 5703393 (2010).
- K. Moon, S. Lim, J. Park, C. Sung, S. Oh, J. Woo, J. Lee, and H. Hwang, "RRAM-based synapse devices for neuromorphic systems", Faraday Discuss., 213, 421-451 (2019). https://doi.org/10.1039/C8FD00127H
- J. Kwon, Y. Song, J. Kim, S. Chun, G. Kim, G. Noh, J. Kwak, S. Hur, C. Kang, D. Jeong, S. Oh, and J. Yoon, "Surface-Dominated HfO2 Nanorod-Based Memristor Exhibiting Highly Linear and Symmetrical Conductance Modulation for High-Precision Neuromorphic Computing", ACS Appl. Mater. Interfaces, 14, 39, 44550-44560 (2022). https://doi.org/10.1021/acsami.2c12247
- Q. Luo, X. Zhang, Y. Hu, T. Gong, X. Xu, P. Yuan, H. Ma, D. Dong, H. Lv, S. Long, Q. Liu, and M. Liu, "Self-rectifying and forming-free resistive-switching device for embedded memory application", IEEE Electron Device Lett., 39(5), 664-667 (2018). https://doi.org/10.1109/LED.2018.2821162
- C. Chou, B. Hudec, C. Hsu, W. Lai, C. Chang, and T. Hou, "Crossbar array of selector-less TaOx/TiO2 bilayer RRAM", Microelectron. Reliab., 55(11), 2220-2223 (2015). https://doi.org/10.1016/j.microrel.2015.04.002
- X. Li, J. Yang, H. Ma, Y. Liu, Z. Ji, W. Huang, X. Ou, W. Zhang, and H. Lu, "Atomic layer deposition of Ga2O3/ZnO composite films for high-performance forming-free resistive switching memory", ACS Appl. Mater. Interfaces, 12(27), 30538-30547 (2020). https://doi.org/10.1021/acsami.0c06476
- D. S. Kim, Y. D. Yun, J. S. Kim, Y. B. Kim, S. H. Jung, N. G. Deshpande, H. S. Lee, and H. K. Cho, "Electrochemically assembled Cu2O nanoparticles using crystallographically anisotropic functional metal ions and highly expeditious resistive switching via nanoparticle coarsening", ACS Nano, 13(5), 5987-5998 (2019). https://doi.org/10.1021/acsnano.9b02108
- D. S. Hyeon, G. Jang, S. Min, and J. P. Hong, "Highly Stable Forming-Free Bipolar Resistive Switching in Cu Layer Stacked Amorphous Carbon Oxide: Transition between C-C Bonding Complexes", Adv. Electron. Mater., 8(2), 2100660 (2021).
- H. Zhang, B. Gao, B. Sun, G. Chen, L. Zeng, L. Liu, X. Liu, J. Lu, R. Han, J. Kang, and B. Yu, "Ionic doping effect in ZrO2 resistive switching memory", Appl. Phys. Lett., 96(12) (2010).
- S. Kim, S. Choi, J. Lee, and W. D. Lu, "Tuning Resistive switching characteristics of Tantalum Oxide Memristors through Si Doping", ACS Nano, 8(10), 10262 (2014).
- H. Zhang, L. Liu, B. Gao, Y. Qiu, X. Liu, J. Lu, R. Han, J. Kang, and B. Yu, "Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach", Appl. Phys. Lett., 98(4), (2011).
- R. Schmitt, J. Spring, R. Korobko, and J. L. M. Rupp, "Design of oxygen vacancy configuration for memristive systems", ACS Nano, 11(9), 8881 (2017).
- H. Lee, "The Latest Trend and Issues of Anion-based Memristor", J. Microelectron. Electron. Packag., 26(11), 1-7 (2019).
- K. Jeon, J. Kim, J. J. Ryu, S. Yoo, C. Song, M. K. Yang, D. S. Jeong, and G. H. Kim, "Self-rectifying resistive memory in passive crossbar arrays", Nature communications, 12(1), 2968 (2021).
- M. Kim, K. Kang, Y. Wang, A. S. Chabungbam, D. Kim, H. N. Kim, and H. -H. Park, "Resistive Switching Properties of N and F co-doped ZnO", J. Microelectron. Electron. Packag., 29(2), 53-58 (2022). https://doi.org/10.6117/KMEPS.2022.29.2.053
- S. E. Kim, J. G. Lee, L. Ling, S. E. Liu, H. K. Lim, V. K. Sangwan, and H. S. Lee, "Sodium-Doped Titania Self-Rectifying Memristors for Crossbar Array Neuromorphic Architectures", Adv Mater., 34(6), 2106913 (2022).
- M. Kim, Y. Wang, D. E. Kim, Q. Shao, H. S. Lee, and H. H. Park, "Resistive switching properties for fluorine doped titania fabricated using atomic layer deposition", APL Mater., 10(3) (2022).
- J. N. Huang, H. M. Huang, Y. Xiao, T. Wang, and X. Guo, "Memristive devices based on Cu-doped NbOx films with large self-rectifying ratio", Solid State Ion., 369, 115732 (2021).
- W. Liu, L. Gao, K. Xu, and F. Ma, "Impact of ultrathin Al2O3 interlayers on resistive switching in TiOx thin films deposited by atomic layer deposition", J. Vac. Sci. Technol. B., 35(4) (2017).
- L. Wang, X. Qian, Y. Cao, Z. Cao, G. Fang, A. Li, and D. Wu, "Excellent reistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structure for non-volatile memory applications", Nanoscale Res. Lett., 10, 1 (2015).
- S. Rehman, H. Kim, M. F. Khan, J. Hur, A. D. Lee, and D. Kim, "Tuning of ionic mobility to improve the resistive switching behavior of Zn-doped CeO2", Sci. Rep., 9(1), 19387 (2019).
- S. Siegel, C. Baeumer, A. Gutsche, M. V. Witzleben, R. Waser, S. Menzel, and R. Dittmann, "Trade-Off between Data Retention and Switching Speed in Resistive Switching ReRAM Devices", Adv. Electron. Mater., 7(1) 2000815 (2021).
- J. Yoon, S. J. Song, I. Yoo, J. Y. Seok, K. J. Yoon, D. E. Kwon, T. H. Park, and C. S. Hwang, "Highly uniform, electroforming-free, and self-rectifying resistive memory in the Pt/Ta2O5/HfO2-x/TiN structure", Adv. Funct. Mater., 24(32), 5086-5095 (2014). https://doi.org/10.1002/adfm.201400064
- H. Zhao, H. Tu, F. Wei, X. Zhang, Y. Xiong, and J. Du, "The enhancement of unipolar resistive switching behavior via an amorphous TiOx layer formation in Dy2O3-based forming-free RRAM, Solid State Electronics", 89, 12-16 (2013). https://doi.org/10.1016/j.sse.2013.06.011
- Y. Wang, M. Kim, M. A. Rehman, A. S. Chabungbam, D. E. Kim, H. S. Lee, and H. H. Park, "Bipolar Resistive Switching in Lanthanum Titanium Oxide and an Increased On/Off Ratio Using an Oxygen-Deficient ZnO Interlayer", ACS Appl. Mater. Interfaces, 14(15), 17682-17690 (2022). https://doi.org/10.1021/acsami.2c03451
- M. Ismail, C. Mahata, and S. Kim, "Forming-free Pt/Al2O3/HfO2/HfAlOx/TiN memristor with controllable multilevel resistive switching and neuromorphic characteristics for artificial synapse", J. Alloys. Compd., 892, 162141 (2022).
- G. Kim, S. Son, H. Song, J. B. Jeon, J. Lee, W. H. Cheong, S. Choi, and K. M. Kim, "Retention Secured Nonlinear and Self-Rectifying Analog Charge Trap Memristor for Energy-Efficient Neuromorphic Hardware", Adv. Sci., 10, 2205654 (2023).
- A. Sawa, "Resistive switching in transition metal oxide", Mater Today., 11(6), 28 (2008).
- S. Kim and H. Lee, "Electric-field Assisted Photochemical Metal Organic Deposition for Forming-less Resistive Switching Device", J. Microelectron. Electron. Packag., 27(4), 77-81 (2020). https://doi.org/10.6117/KMEPS.2020.27.4.077
- Y. Wang, M. Kim, A. S. Chabungbam, D. E. Kim, Q. Shao, I. Kymissis, and H. H. Park, "Relationship between resistive switching and Mott transition in atomic layer deposition prepared La2Ti2O7-x thin film", Scr. Mater., 222, 115050 (2023).
- M. Kim, M. A. Rehman, D. Lee, Y. Wang, D. H. Lim, M. F. Khan, H. Choi, Q. Y. Shao, J. Suh, H. S. Lee, and H. H Park, "Filamentary and Interface-Type Memristors Based on Tantalum Oxide for Energy-Efficient Neuromorphic Hardware", ACS Appl. Mater. Interfaces, 14, 44561-44571 (2022). https://doi.org/10.1021/acsami.2c12296
- J. C. Gonzalez-Rosillo, M. Balaish, Z. D. Hood, N. Nadkarni, D. Fraggedakis, K. J. Kim, and J. L. Rupp, "Lithium-battery anode gains additional functionality for neuromorphic computing through metal-insulator phase separation", Adv. Mater., 32(9), 1907465 (2020).
- H. Lv, X. Xu, H. Liu, R. Liu, Q. Liu, W. Banerjee, H. Sun, S. Long, L. Li, and M. Liu, "Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory", Sci. Rep., 5(1), 7764 (2015).
- B. Ku, Y. Abbas, A. S. Sokolov, and C. Choi, "Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors", J. Alloys Compd., 735, 1181-1188 (2018). https://doi.org/10.1016/j.jallcom.2017.11.267
- J. C. Wang, Y. R. Ye, C. S. Lai, C. T. Lin, H. C. Lu, C. I. Wu, and P. S. Wang, "Characterization of gadolinium oxide thin films with CF4 plasma treatment for resistive switching memory applications", Appl. Surf. Sci., 276, 497-501 (2013). https://doi.org/10.1016/j.apsusc.2013.03.122
- Y. Sun, X. Yan, X. Zheng, Y. Liu, Y. Zhao, Y. Shen, Q. Liao, and Y. Zhang, "High On-Off Ratio Improvement of ZnO-Based Forming-Free Memristor by Surface Hydrogen Annealing", ACS Appl. Mater. Interfaces, 7, 7382-7388 (2015). https://doi.org/10.1021/acsami.5b01080