• 제목/요약/키워드: Metal oxide material

검색결과 678건 처리시간 0.031초

Macro Modeling and Parameter Extraction of Lateral Double Diffused Metal Oxide Semiconductor Transistor

  • Kim, Sang-Yong;Kim, Il-Soo
    • Transactions on Electrical and Electronic Materials
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    • 제12권1호
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    • pp.7-10
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    • 2011
  • High voltage (HV) integrated circuits are viable alternatives to discrete circuits in a wide variety of applications. A HV device generally used in these circuits is a lateral double diffused metal oxide semiconductor (LDMOS) transistor. Attempts to model LDMOS devices are complicated by the existence of the lightly doped drain and by the extension of the poly-silicon and the gate oxide. Several physically based investigations of the bias-dependent drift resistance of HV devices have been conducted, but a complete physical model has not been reported. We propose a new technique to model HV devices using both the BSIM3 SPICE model and a bias dependent resistor model (sub-circuit macro model).

Metal CMP 세정 공정에서 DHF 적용에 관한 연구 (Investigation on DHF Application at Metal CMP Cleaning Process)

  • 김남훈;김상용;김인표;장의구
    • 한국전기전자재료학회논문지
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    • 제16권7호
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    • pp.569-572
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    • 2003
  • In this study, we evaluated the dilute HF cleaning to reduce residual defects made by metal CMP process. The purpose of this test is to observe the existence of barrier metal damage during DHF cleaning on condition that it should not affect metal thin film reliability, so we will get rid of slurry residual particles as a main defect of the metal CMP process for the better yield. In-line defect data showed us that slurry residual particles were removed by DHF application. The HF rinse significantly reduced metal contamination levels and surface roughness. The best effect by additional oxide loss was discovered when Dilute HF condition is 10".

A New Trend in the Sol-Gel Method and Thin Films from Metal Alkoxides

  • Soh, Deawha;Korobova, N.
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.814-819
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    • 2000
  • The progress in the field of electronic materials has been especially significant for applications involving a range of electrical properties. Its importance is increasing with the increasing demand for integrated circuits. The sol-gel technique has been used for many years, and the metal alkoxides have featured prominently as source materials. The method consist of making a homogeneous solution of the component metal alkoxides in a suitable solvent, usually the parent alcohol; and then causing the hydrolysis under controlled conditions to produce a gel containing the hydrated metal oxide. The gel is then dried, and fired to produce a ceramic or glassy material at a temperature much lower than that required by the conventional melting process. This project consists of important theoretical considerations, processing techniques and applications related to electrophoresis derived thin films. In the electrophoretic process a metal alkoxide solution is gelled through hydrolysis-polymerization and converted the gel thin layer to an oxide by heating at relatively low temperatures.

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Solution-processed indium-zinc oxide with carrier-suppressing additives

  • Kim, Dong Lim;Jeong, Woong Hee;Kim, Gun Hee;Kim, Hyun Jae
    • Journal of Information Display
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    • 제13권3호
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    • pp.113-118
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    • 2012
  • Metal oxide semiconductors were considered promising materials as backplanes of future displays. Moreover, the adoption of carrier-suppressing metal into indium-zinc oxide (IZO) has become one of the most important themes in the metal oxide research field. In this paper, efforts to realize and optimize IZO with diverse types of carrier suppressors are summarized. Properties such as the band gap of metal in the oxidized form and its electronegativity were examined to confirm their relationship with the metal's carrier-suppressing ability. It was concluded that those two properties could be used as indicators of the carrier-suppressing ability of a material. As predicted by the properties, the alkali earth metals and early transition metals used in the research effectively suppressed the carrier and optimized the electrical properties of the metal oxide semiconductors. With the carrier-suppressing metals, IZO-based thin-film transistors with high (above $1cm^2/V{\cdot}s$) mobility, a lower than 0.6V/dec sub-threshold gate swing, and an over $3{\times}10^6$ on-to-off current ratio could be achieved.

유기전해액에서 루테늄산화물 전극의 전기화학적 특성 (Electrochemical Characteristics of Ruthenium Oxide Electrode-Organic Electrolyte System)

  • 도칠훈;최상진;문성인;윤문수;육경창;김상길
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.1125-1128
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    • 2002
  • Electrochemical capacitor made with metal oxide electrode uses rapid and reversible protonation/deprotonation of metal oxide material under the aqueous acidic solution, generally. Electrochemical stability window of aqueous electrolyte-type capacitor is narrow compared to that of organic electrolyte-type capacitor. Electrochemical characteristics of electrochemical capacitor made with metal oxide electrode and lithium cation based organic electrolyte were evaluated. Electrochemical capacitor based on $RuO_2$ electrode material and 1M $LiPF_6$ in mixed solvents of EC, DEC, and EMC has anodic and cathodic specific capacitance of 145 and 142 F/g-$RuO_2{\cdot}nH_2O$, respectively, by using cyclic voltammetry with scan rate of 2 mV/sec g-$RuO_2$ in potential range of 2.0~4.2V(Li|$Li^+$).

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신구조 금속지지체형 고체산화물 연료전지 (Study on metal-supported solid oxide fuel cells)

  • 이창보;배중면
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2007년도 춘계학술대회
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    • pp.129-132
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    • 2007
  • Advanced structure of metal-supported solid oxide fuel cells was devised to overcome sealing problem and mechanical instability in ceramic-supported solid oxide fuel cells. STS430 whose dimensions were 26mm diameter, 1mm thickness and 0.4mm channel width was used as metal support. Thin ceramic layer composed of anode(Ni/YSZ) and electrolyte(YSZ) was joined with STS430 metal support by using a cermet adhesive. $La_{0.8}Sr_{0.2}Co_{0.4}Mn_{0.6}O_{3}$ perovskite oxide was used as cathode material. It was noted that oxygen reduction reaction of cathode governed the overall cell performance from oxygen partial pressure dependance.

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나노 금속산화물을 이용한 유단말용 환경 모니터링 서브 시스템 (Environmental Monitoring Sub-System for Ubiquitous Terminal Using Metal Oxide Nano-Material Gas Sensor)

  • 문승언;이홍열;이재우;박종혁;박소정;곽준혁;맹성렬;박강호;김종대
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.63-63
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    • 2008
  • Environmental monitoring sub-system has been developed using gas sensor module, Bluetooth module and PDA phone. The gas sensor module consists of $NO_2or$ CO gas sensor and signal processing chips. Gas sensor is composed of the micro-heater, sensing electrode and sensing material. Metal oxide nano-material was selectively deposited on a substrate with micro-heater and was integrated to the gas sensor module. The change in resistance of the metal oxide nano-material due to exposure of oxidizing or deoxidizing gases is utilized as the principle of this gas sensor operation mechanism. This variation detected in the gas sensor module was transferred to the PDA phone by way of Bluetooth module.

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산화금속의 전기적 스위칭 특성 연구 (A study on the electrical switching properties of oxide metal)

  • 최성재;이원식
    • 한국인터넷방송통신학회논문지
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    • 제9권3호
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    • pp.173-178
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    • 2009
  • 금속산화물 박막 소자를 제작하여 전기적 특성을 조사하였다. 소자는 Electrode를 TOP-TOP구조로 제작하였으며 스위칭 특성을 연구하기 위해 전극간의 산화금속박막의 전도특성이 측정되었다. 소자의 저항변화는 전압을 선형적으로 인가하여 측정하였다. 제작된 소자는 MIM구조로써 외부에서 인가하는 전기적 신호에 의하여 전기전도도가 큰 On-state와 전기전도도가 낮은 Off-state로 바뀌는 특성을 나타내었다. $Si/SiO_2/MgO$ 소자는 Forming에 의해 저항이 큰 상태에서 저항이 작은 상태로 전기적 특성이 변화하면서 스위칭 특성을 보였다. 본 연구를 통하여 산화금속은 차세대 비휘발성 메모리로는 물론 다른 전기적 응용이 기대되는 물질임을 확인하게 되었다.

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Preparation and Analysis of High Functional Silicone Hydrogel Lens Containing Metal Oxide Nanoparticles by Photopolymerizaion

  • Heo, Ji-Won;Sung, A-Young
    • 한국재료학회지
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    • 제32권4호
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    • pp.193-199
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    • 2022
  • In this study, lenses are fabricated using various nanomaterials as additives to a silicone polymer made with an optimum mixing ratio and short polymerization time. In addition, PVP is added at a ratio of 1 % to investigate the physical properties according to the degree of dispersion, and the compatibility with hydrophobic silicone and the possibility of application as a functional lens material are confirmed. The main materials are SIU as a silicone monomer, DMA, a hydrophilic copolymer, EGDMA as a crosslinking agent, and 2H2M as a photoinitiator. Holmium (III) oxide, Europium (III) oxide, aluminum oxide, and PVP are used. When Holmium (III) oxide and Europium (III) oxide are added based on the Ref sample, the characteristics of the lens tend to be similar overall, and the aluminum oxide shows a tendency slightly different from the previous two oxides. This material can be used as a silicone lens material with various nano oxides and polyvinylpyrrolidone (PVP) acting as a dispersant.