• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.368-368
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• 2007

Zinc oxide (ZnO) has drawn much interest as a potential transparent conducting oxide (TCO) for applying to solar cell and front electrode of electro-luminescent devices. For the enhancement of electrical property of TCOs, dopant introduction and hybridization with conductive nanoparticles have been investigated. In this work, ZnO films were formed on glass substrate by using photochemical solution deposition of Ag nanoparticles dispersed or various metal (Ag, Cd, In, or Sn) contained photosensitive ZnO solutions. The usage of photosensitive solution permits us to obtain a micron-sized direct patterning of ZnO film without using conventional dry etching procedure. The structural, optical, and electrical characteristics of ZnO films with the introduction of metal dopants with/without Ag nanoparticles have been investigated to check whether there is a combined effect between metal dopants and Ag nanoparticles on the characteristics of ZnO film. The phase formation and crystallinity of ZnO film were monitored with X-ray diffractometer. The optical transmittance measurement was carried out using UV-VIS-NIR spectrometer and the electrical properties such as sheet resistance and conductivity were observed by using four-point probe.

• Journal of Powder Materials
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• v.25 no.1
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• pp.36-42
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• 2018

In order to expand the application of oxide dispersion-strengthened (ODS) steel, a composite material is manufactured by adding mechanically alloyed ODS steel powder to conventional steel and investigated in terms of microstructure and wear properties. For comparison, a commercial automobile part material is also tested. Initial microstructural observations confirm that the composite material with added ODS steel contains i) a pearlitic Fe matrix area and ii) an area with Cr-based carbides and ODS steel particles in the form of a $Fe-Fe_3C$ structure. In the commercial material, various hard Co-, Fe-Mo-, and Cr-based particles are present in a pearlitic Fe matrix. Wear testing using the VSR engine simulation wear test confirms that the seatface widths of the composite material with added ODS steel and the commercial material are increased by 24% and 47%, respectively, with wear depths of 0.05 mm and 0.1 mm, respectively. The ODS steel-added composite material shows better wear resistance. Post-wear-testing surface and cross-sectional observations show that particles in the commercial material easily fall off, while the ODS steel-added material has an even, smooth wear surface.

• Transactions on Electrical and Electronic Materials
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• v.16 no.6
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• pp.312-316
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• 2015

Through silicon via (TSV) technology holds the promise of chip-to-chip or chip-to-package interconnections for higher performance with reduced signal delay and power consumption. It includes high aspect ratio silicon etching, insulation liner deposition, and seamless metal filling. The desired etch profile should be straightforward, but high aspect ratio silicon etching is still a challenge. In this paper, we investigate the use of etch hard mask for finer TSVs etching to have clear definition of etched via pattern. Conventionally employed photoresist methods were initially evaluated as reference processes, and oxide and metal hard mask were investigated. We admit that pure metal mask is rarely employed in industry, but the etch result of metal mask support why hard mask are more realistic for finer TSV etching than conventional photoresist and oxide mask.

• Journal of Technologic Dentistry
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• v.32 no.4
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• pp.297-305
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• 2010

Purpose: The purpose of this study was to observe the change of metal-mold reaction and surface roughness in titanium casting specimens for phosphate-silica alumina bonded investment with mold temperatures. Methods: The metal-phosphate silica alumina bonded mold interface reaction and surface roughness of titanium casting specimens according to mold temperatures were investigated. The Specimens were analysed by scanning electron microscopy and surface roughness tester. Results: The oxidation behavior indicated by the growth of oxide thickness. The titanium-oxide layer were consisted two layer of a porous external and a dense internal one. The reaction layer and surface roughness increased with increasing investment material temperature. Conclusion: In this work, The most suitable mold temperature in casting of pure titanium was $200^{\circ}C$.

• Journal of Industrial Technology
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• v.27 no.A
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• pp.19-24
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• 2007

This research was done for possible treatment of impermeable surfaces rainwater runoff containing heavy metal ions by manganese oxide coated on polypropylene support. Manganese oxide was coated by Birnessite Coating Methods(BCM)and the coating analyzed by SEM and FT-IR techniques. The efficiency of heavy metal ions adsorption was also assessed via both batch and column tests. Adsorption efficiencies of Cd, Zn, Cu, and Pb were 99.4%, 98.9%, 96.7%, and over 95.7%, respectively. The adsorption progress pattern reveals quite fast adsorption at initial periods of treatment and change to slower rates at later times.

• Transactions on Electrical and Electronic Materials
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• v.3 no.3
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• pp.14-17
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• 2002

The HDP (High Density Plasma) CVD process consists of a simultaneous sputter etch and chemical vapor deposition. As CMOS process continues to scale down to sub- quarter micron technology, HDP process has been widely used fur the gap-fill of small geometry metal spacing in inter-metal dielectric process. However, HBP CVD system has some potential problems including plasma-induced damage. Plasma-induced gate oxide damage has been an increasingly important issue for integrated circuit process technology. In this paper, thin gate oxide charge damage caused by HDP deposition of inter-metal dielectric was studied. Multiple step HDP deposition process was demonstrated in this work to prevent plasma-induced damage by introducing an in-situ top SiH$_4$ unbiased liner deposition before conventional deposition.

• Journal of the Korean Electrochemical Society
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• v.11 no.2
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• pp.95-99
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• 2008

This study has made the electrode that is coated zirconium oxide on the titanium by ESD(Electrostatic spray deposition) coating methode. It has investigated the effects of the etching method of a Ti substrate as the preparation, making of zirconium oxide film and electrochemical characteristics of the electrode that is etched on the titanium. The HCl etching develops a fine and homogeneous roughness on the Ti substrate. Fabrication and material properties of the metal oxide electrode, which is known to be so effective to generate ozone and hypochlorous acid (HOCl) as power oxidant, were studied. A proper metal oxide material is focus zirconium oxide through reference. A coating method to enhance the fabrication reproducibility of the zirconium oxide electrode was used ESD coating method by zirconium oxychloride. Zirconium oxide films on the Ti substrate were tested using SEM, XRD, Cyclic voltammetry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.675-678
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• 2004

Ozone is usually generated from oxygen gas using a silent discharge apparatus and its concentration is less then 10 mol%. An ozone condensation system is constructed for metal oxide thin film fabrication. Ozone is condensed by the adsorption method, which is widely used for the growth of oxidation thin films such as superconductor. Highly condensed ozone is analyzed by three methods; ultraviolet absorption, thermal decomposition and Q-mass analyzing methods. Thermal decomposition method is most effective in the highly condensed ozone region and its method is superior to Q-mass analyzer for determining ozone concentration because of the simplicity of the method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.11
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• pp.720-724
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• 2016

Transparent n-type metal-oxide semiconductor of $MoO_x$ was applied on a p-type Si substrate for high-performing heterojunction photodetector. The formation of $MoO_x$ on Si spontaneously established a rectifying current flow with a high rectification ratio of 1,252.3%. Under light illumination condition, n-type $MoO_x$/p-type Si heterojunction device provided significantly fast responses (rise time : 61.28 ms, fall time : 66.26 ms). This transparent metal-oxide layer ($MoO_x$) would provide a functional route for various photoelectric devices, including photodetectors and solar cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.47-47
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• 2007

Indium oxide conducting films were dep9sited on Si(100) substrates at various temperatures by liquid delivery metal organic chemical vapor deposition using Indium (III) tris (2,2,6,6-tetramethyl-3.5-heptanedionato) $(dpm)_3$ precursors. The films deposited at $200{\sim}400^{\circ}C$ were grown with a (111) preferred orientation and exhibit an increase of grain size from 21 to 33nm with increasing deposition temperature. In the range of deposition temperature, there is no metallic indium phase in deposited films.