• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2003년도 춘계학술발표회 초록집
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• pp.53-53
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• 2003

Plasma polymerized organic thin films were deposited on Si(100) glass and metal substrates using thiophene and ethylcyclohexane precursors by PECVD method. In order to compare electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 30~100 W. AFM showed that the polymer films with smooth surface and sharp interface could be grown under various deposition conditions. Impedance analyzer was utilized for the determination of I-V curve for leakage current density and C-V for dielectric constants, respectively. To obtain C-V curve, we used a MIM structure of metal(Al)-insulator(plasma polymerized thin film)-metal(Pt) structure. Al as the electrode was evaporated on the thiophene films that grew on Pt coated silicon substrates, and the dielectric constants of the as-grown films were then calculated from C- V data measured at 1MHz. From the electrical property measurements such as I-V and C-V characteristics, the minimum dielectric constant and the best leakage current of thiophene thin films were obtained to be about 3.22 and $1{\;}{\times}10^{-11}{\;}A/cm^2$. However, in case of ethylcyclohexane thin films, the minimum dielectric constant and the best leakage current were obtained to be about 3.11 and $5{\;}{\times}10^{-12}{\;}A/cm^2$.

• 산업기술연구
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• 제43권1호
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• pp.25-31
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• 2023

Stretchable and flexible electronics that comply with dynamic movements and micromotion of the human tissues can enable real-time monitoring of physiologic signals onto the human skin and in the brain, respectively. Especially, gallium based liquid metal stretchable electronics can offer human-interactive biosensors to monitor various physiologic parameters. However, the liquid-like nature, surface oxidation and contamination by organic materials, and low biostability of the liquid metals have still limited the long-term use as bioelectronics. Here we introduced electrochemical deposition without oxidation pathways to overcome these practical challenges in liquid metal bioelectronics. CNT/PDDA composite with reduction way and PEDOT:BF₄ with oxidation way under organic solvent are suggested as rationally designed material engineering approaches. We confirmed that the structures with the soft, flexible, and stretchable liquid metal platform can successfully detect dopamine with a high sensitivity and selectivity, record neural signals including action potentials without scar formation, and monitor physiologic signals such as EMG and ECG.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 학술대회 논문집
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• pp.129-132
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• 2003

Yttria stabilized zirconia (YSZ) buffer layers were deposited by a metal organic chemical vapor deposition (MOCVD) technique using single liquid source for the application of YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) coated conductor. Y:Zr mole ratio was 0.2:0.8, and tetrahydrofuran (THF) was used as a solvent. The (100) single crystal MgO substrate was used for searching deposition condition. Bi-axially oriented CeO$_2$ and NiO films were fabricated on {100}〈001〉 Ni substrate by the same method and used as templates. At a constant working pressure of 10 Torr, the deposition temperatures (660~80$0^{\circ}C$) and oxygen flow rates (100~500 sccm) were changed to find the optimum deposition condition. The best (100) oriented YSZ film on MgO was obtained at 74$0^{\circ}C$ and $O_2$ flow rate of 300 sccm. For YSZ buffer layer with this deposition condition on CeO$_2$/Ni template, full width half maximum (FWHM) values of the in-plane and out-of-plane alignments were 10.6$^{\circ}$ and 9.8$^{\circ}$, respectively. The SEM image of YSZ film on CeO$_2$/Ni showed surface morphologies without microcrack.k.

• 마이크로전자및패키징학회지
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• 제27권1호
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• pp.25-29
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• 2020

광화학증착법 (PMOD; photochemical metal-organic deposition)을 이용하여 photoresist 및 etching 공정없이 pattern 된 TiO_x resistive switching (RS) 소자를 제작 및 그 특성을 평가하였다. Ti(IV) 2-ethylhexanoate를 출발물질로 사용하였으며 UV 노출시간 10 min에 광화학반응이 완료됨을 FTIR 분석을 통하여 확인하였다. 200 ℃ 이하 저온공정에서 직접패턴 된 20 nm 두께의 비정질 TiO_x 박막의 균일한 두께의 패턴형성을 Atomic Force Microscopy를 통하여 확인하였다. 별도의 상형성을 위한 후 열처리 공정 없이 4 ㎛ 선폭의 전극위에 형성된 20 nm 두께의 비정질 TiO_x RS 소자는 4V 동작전압에서 on/off ratio 20의 forming-less RS 특성을 나타내었다. Electrochemical migration에 영향을 미치는 grain boundary가 없어 소자간 신뢰성 향상이 기대되며, flexible 기판 또는 저온공정이 요구되는 메모리 소자 공정에서 PMOD 공정이 응용될 수 있음을 보여준다. Selector를 이용하여 crossbar array 구조를 도입할 경우 매우 간단한 구조의 저비용 메모리 소자를 구현할 수 있을 것으로 기대 된다.

• 한국재료학회지
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• 제33권12호
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• pp.525-529
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• 2023

β-Ga₂O₃ has become the focus of considerable attention as an ultra-wide bandgap semiconductor following the successful development of bulk single crystals using the melt growth method. Accordingly, homoepitaxy studies, where the interface between the substrate and the epilayer is not problematic, have become mainstream and many results have been published. However, because the cost of homo-substrates is high, research is still mainly at the laboratory level and has not yet been scaled up to commercialization. To overcome this problem, many researchers are trying to grow high quality Ga₂O₃ epilayers on hetero-substrates. We used diluted SiH4 gas to control the doping concentration during the heteroepitaxial growth of β-Ga₂O₃ on c-plane sapphire using metal organic chemical vapor deposition (MOCVD). Despite the high level of defect density inside the grown β-Ga₂O₃ epilayer due to the aggregation of random rotated domains, the carrier concentration could be controlled from 1 × 10¹⁹ to 1 × 10¹⁶ cm^-3 by diluting the SiH4 gas concentration. This study indicates that β-Ga₂O₃ hetero-epitaxy has similar potential to homo-epitaxy and is expected to accelerate the commercialization of β-Ga₂O₃ applications with the advantage of low substrate cost.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.319-319
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• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.

• Bulletin of the Korean Chemical Society
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• 제26권12호
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• pp.2017-2020
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• 2005

The supported bimetallic Co-containing catalysts promoted by the different amount of noble metal (Pd) have been studied in the dry reforming of methane. The activity, selectivity, stability and resistance to the carbon deposition of Co-Pd/$Al_2O_3$ catalysts depend on both the catalyst composition and process conditions. It has been observed that the Co-Pd/$Al_2O_3$ catalysts produce the various oxygenates from $CO_2$ + $CH_4$ at moderate pressures.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.348-351
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• 2004

We describe a new approach for building organic light-emitting diodes (OLEDs), which is based on physical lamination (i.e. soft contact lamination (ScL)) of thin metal electrodes supported by an elastomeric layer (polydimethylsiloxane) against an electroluminescent organic. We find that the devices fabricated have much better performance than those constructed with conventional vacuum deposition process. In addition, the ScL is intrinsically compatible with the technique of soft lithograph so that it is easy to build patterned OLEDs with feature sizes into the nanometer regime.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.313-316
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• 1998

Conjugated oligomers have been already used as active layers in field effect transistors, photodiodes and electroluminescent devices. Particularly thiophene oligomers such $\alpha$ -sexithiophene($\alpha$-6T) attract great interest for its prospective app1ications in large-area flexible displays. In this study, we investigated the contact properties between the organic semiconductor $\alpha$-6T and metals such as Au(Gold), Ag(Silver), Cr(Chromium), Al(Aluminum), Cr(Chromium). Using the Transmission Line Model(TLM) method, specific contact resistances of the metal lines in contact with the $\alpha$-6T were determined. From the current-voltage characteristics, electrical conductivity of the $\alpha$-6T films is found.

• 한국재료학회지
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• 제8권4호
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• pp.345-353
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• 1998

음이온 리간드로 hfac이 배위된 세 가지 종류의 구리(l) 전구체들의 열적 안정성, 기상분해 특성, 증착 특성 등을 연구하였다. $^{1}$H-NMR결과로부터 (hfac) Cu(VTMS) (hfac=hexafluoroacetylacetonate, VTMS=vinyltrimethylsilane)와 (hfac)Cu(VTMS) (VTMOS=vinyltrimethoxysilane)는 열적으로 안정한 화합물이라는 것을 확인할 수 있었으며, (hfac)Cu(ATMS)(STMS=allyltrimethylsilane)는 다른 전구체에 비해 열적으로 불안정한 화합물이라는 것을 확인할 수 있었다. In-situ FT-IR을 이용하여 기상 분해 특성을 연구한 결과 (hfac)Cu(VTMS)의 경우 $150^{\circ}C$부근에서 $Cu(hfac)_{2}$, $240^{\circ}C$부근에서 free한 상태의 hfac의 생성을 확인할 수 있었으며, 이러한 특성이 박막의 증착 속도와 물성에 미치는 영향을 확인하였다. 그리고 이들 전구체들의 증착 특성을 연구하였으며 (hfac)Cu(ATMS)의 경우 아르곤 운반 기체하에서 기판 온도가 $60^{\circ}C$일 때 구리 박막이 증착이 시작되는 것을 관찰할 수 있었는데, 이러한 낮은 증착 온도는 상대적으로 약한 구리와 ATMS의 결합력에 의한 것으로 생각된다.