• Title/Summary/Keyword: Metal film

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A Study of Photoelectrolysis of Water by Use of Titanium Oxide Films (산화티타늄 피막의 광 전기분해 특성에 관한 연구)

  • Park, Seong-Young;Cho, Byung-Won;Ju, Jeh-Beck;Yun, Kyung-Suk;Lee, Eung-Cho
    • Applied Chemistry for Engineering
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    • v.3 no.1
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    • pp.88-99
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    • 1992
  • For the development of semiconducting photoelectrode to be more stable and efficient in the process of photoelectrolysis of the water, pure titanium rods were oxidized by anodic oxidation, furance oxidation and flame oxidation and used as electrodes. The Indium islands were formed by electrodeposition of "In" thin film on $TiO_2$ and Ti by electrodeposition. Also $A1_2O_3$ and NiO islands were coated on Ti by the electron-beam evaporation technique. The maximum photoelectrochemical conversion efficiency(${\eta}$) was 0.98% for flame oxidized electrode($1200^{\circ}C$ for 2min in air). Anodically oxidized electrodes have photoelectrochemical conversion efficiency of 0.14%. Furnace oxidized electrode($800^{\circ}C$ for 10min in air) has 0.57% of photoelectrochemical efficiency and shows a band-gap energy of about 2.9eV. The $In_2O_3$ coated $TiO_2$ exhibits 0.8% of photoelectrochemical efficiency but much higher value of ${\eta}$ was obtained with the Increase of applied blas voltage. However, $Al_2O_3$ or NiO coated $TiO_2$ shows much low value of ${\eta}$. The efficiency was dependent on the presence of the metallic interstitial compound $TiO_{0+x}$(x<0.33) at the metal-semiconductor interface and the thickness of the suboxide layer and the external rutile scale.

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The Fabrication of OTFT-OLED Array Using Ag-paste for Source and Drain Electrode (Ag 페이스트를 소스와 드레인 전극으로 사용한 OTFT-OLED 어레이 제작)

  • Ryu, Gi-Seong;Kim, Young-Bae;Song, Chung-Kun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.5
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    • pp.12-18
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    • 2008
  • Ag paste was employed for source and drain electrode of OTFTs and for the data metal lines of OTFT-OLED array on PC(polycarbonate) substrate. We tested two kinds of Ag-pastes such as pastes for 325 mesh and 500 mesh screen mask to examine the pattern ability and electrical performance for OTFTs. The minimum feature size was 60 ${\mu}m$ for 325 mesh screen mask and 40 ${\mu}m$ for 500 mesh screen mask. The conductivity was 60 $m{\Omega}/\square$ for 325 mesh and 133.1 $m{\Omega}/\square$ for 500 mesh. For the OTFT performance the mobility was 0.35 $cm^2/V{\cdot}sec$ and 0.12 $cm^2/V{\cdot}sec$, threshold voltage was -4.7 V and 0.9 V, respectively, and on/off current ratio was ${\sim}10^5$, for both screen masks. We applied the 500 mash Ag paste to OTFT-OLED array because of its good patterning property. The pixel was composed of two OTFTs and one capacitor and one OLED in the area of $2mm{\times}2mm$. The panel successfully worked in active mode operation even though there were a few bad pixels.

Characteristics of MHEMT Devices Having T-Shaped Gate Structure for W-Band MMIC (W-Band MMIC를 위한 T-형태 게이트 구조를 갖는 MHMET 소자 특성)

  • Lee, Jong-Min;Min, Byoung-Gue;Chang, Sung-Jae;Chang, Woo-Jin;Yoon, Hyung Sup;Jung, Hyun-Wook;Kim, Seong-Il;Kang, Dong Min;Kim, Wansik;Jung, Jooyong;Kim, Jongpil;Seo, Mihui;Kim, Sosu
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.2
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    • pp.99-104
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    • 2020
  • In this study, we fabricated a metamorphic high-electron-mobility transistor (mHEMT) device with a T-type gate structure for the implementation of W-band monolithic microwave integrated circuits (MMICs) and investigated its characteristics. To fabricate the mHEMT device, a recess process for etching of its Schottky layer was applied before gate metal deposition, and an e-beam lithography using a triple photoresist film for the T-gate structure was employed. We measured DC and RF characteristics of the fabricated device to verify the characteristics that can be used in W-band MMIC design. The mHEMT device exhibited DC characteristics such as a drain current density of 747 mA/mm, maximum transconductance of 1.354 S/mm, and pinch-off voltage of -0.42 V. Concerning the frequency characteristics, the device showed a cutoff frequency of 215 GHz and maximum oscillation frequency of 260 GHz, which provide sufficient performance for W-band MMIC design and fabrication. In addition, active and passive modeling was performed and its accuracy was evaluated by comparing the measured results. The developed mHEMT and device models could be used for the fabrication of W-band MMICs.

EFFECT OF CHEMICAL TREATMENT ON THE BIOACTIVITY OF TITANIUM (화학적 처리가 티타늄의 생체활성도에 미치는 영향)

  • Min Kwan-Sik;Lee Min-Ho;Ahn Seung-Geun;Park Charn-Woon
    • The Journal of Korean Academy of Prosthodontics
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    • v.43 no.4
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    • pp.562-572
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    • 2005
  • Statement of problem : Titanium is widely used as an implant material lot artificial teeth. Also, studies on surface treatment to form a fine passive film on the surface of commercial titanium or its alloys and improving bioactivity with bone have been carried out. However, there is insufficient data about the biocompatibility of the implant materials in the body. Purpose: The purpose of this study was to examine whether the precipitation of apatite on titanium metal is affected by surface modification. Materials and methods: Specimens chemically washed for 2 minute in a 1:1:1.5 (in vol%) mixture of 48% HF 60% $HNO_3$ and distilled water. Specimens were then chemically treated with a solution containing 97% $H_2SO_4$ and 30% $H_2O_2$ at $40^{\circ}C$S for 1 hour, and subsequently heat-treated at $400^{\circ}C$ for 1 hour. All specimens were immersed in the HBSS with pH 7.4 at $36.5^{\circ}C$ for 15 days, and the surface were examined with TF-XRD, SEM, EDX and XPS. Also, commercial purity Ti specimens with and without surface treatment were implanted in the abdominal connective tissue of mice for 4 weeks. Conventional aluminium and stainless steel 316L were also implanted for comparison. Results and conclusions : The results obtained were summarized as follows. 1. An amorphous titania gel layer was formed on the titanium surface after the titanium specimen was treated with a $H_2SO_4$ and $H_2O_2$ solution. The average roughness was $2.175{\mu}m$ after chemical surface treatment. 2. The amorphous titania was subsequently transformed into anatase by heat treatment at $400^{\circ}C$ for 1 hour. 3. The average thickness of the fibrous capsule surrounding the specimens implanted in the connective tissue was $46.98{\mu}m$ in chemically-treated Ti, and 52.20, 168.65 and $100.95{\mu}m$ respectively in commercial pure Ti, aluminum and stainless steel 316L without any treatment.

To Compare and Analyze Costumes in the Film "The Great Gatsby" and Y&Kei Collection (영화 "The Great Gatsby" 의상과 Y&Kei 컬렉션 비교 분석)

  • O, Ji-Hye;Lee, In-Seong
    • The Research Journal of the Costume Culture
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    • v.16 no.6
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    • pp.1050-1063
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    • 2008
  • A movie is a fiction made on a basis of an author's and a writer's imagination, but all sorts of properties mixed with each other and most realistically expresses the era which becomes the background of a movie and acts as a carrier that connects designers with consumers. Thus, this study was carried out to review how the fashion products that designer's intention and commercial value added are expressed in collections by comparing and analysing the costumes in the movie "The Great Gatsby" that described the life of America's upper-class in 1920s and the 04 S/S Y&Kei collection which were proceeding after getting inspiration from this movie. For this, literature materials were inspected in order to make a theoretical review on social and cultural background and costumes history background in 1920s and the photo materials on movie costume were collected and analysed using DVD video captures, as well as the photo materials on 04 S/S Y&Kei were collected and analyzed through the institute providing domestic fashion information. The following conclusion was deduced through this study. First, in 1920s which becomes the background of this study, the slim shape of Flapper which looks like a young and boy became an ideal figure condition and the straight silhouette with low waist line and the short skirt that rose to knee was popular. Second, as a result of analysing movie costume by classifying it in silhouette, colors, and materials, straight silhouette of low waistline with a near colored - tone seen in the pastel series, including white, beige, pink, and gray was mainly constituted and the metal colors like silver and gold were used. As a material, chiffon, satin, velvet, flower patterned prints, and beads were used, which represented luxurious life of women in the upper classes. Third, as a result of comparing and analysing, it turned out that there was a similarity. However, in dress collection for a heroine, some dissimilarity differentiated from a movie costumes was found out in that the dresses in collection expressed moderate beauty and modernism and elegant beauty at the same time by matching a variety of materials and using black color.

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Ellipsometric study of Mn-doped $Bi_4Ti_3O_{12}$ thin films

  • Yoon, Jae-Jin;Ghong, Tae-Ho;Jung, Yong-Woo;Kim, Young-Dong;Seong, Tae-Geun;Kang, Lee-Seung;Nahm, Sahn
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.173-173
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    • 2010
  • $Bi_4Ti_3O_{12}$ ($B_4T_3$) is a unique ferroelectric material that has a relatively high dielectric constant, high Curie temperature, high breakdown strength, and large spontaneous polarization. As a result this material has been widely studied for many applications, including nonvolatile ferroelectric random memories, microelectronic mechanical systems, and nonlinear-optical devices. Several reports have appeared on the use of Mn dopants to improve the electrical properties of $B_4T_3$ thin films. Mn ions have frequently been used for this purpose in thin films and multilayer capacitors in situations where intrinsic oxygen vacancies are the major defects. However, no systematic study of the optical properties of $B_4T_3$ films has appeared to date. Here, we report optical data for these films, determined by spectroscopic ellipsometry (SE). We also report the effects of thermal annealing and Mn doping on the optical properties. The SE data were analyzed using a multilayer model that is consistent with the original sample structure, specifically surface roughness/$B_4T_3$ film/Pt/Ti/$SiO_2$/c-Si). The data are well described by the Tauc-Lorentz dispersion function, which can therefore be used to model the optical properties of these materials. Parameters for reconstructing the dielectric functions of these films are also reported. The SE data show that thermal annealing crystallizes $B_4T_3$ films, as confirmed by the appearance of $B_4T_3$ peaks in X-ray diffraction patterns. The bandgap of $B_4T_3$ red-shifts with increasing Mn concentration. We interpret this as evidence of the existence deep levels generated by the Mn transition-metal d states. These results will be useful in a number of contexts, including more detailed studies of the optical properties of these materials for engineering high-speed devices.

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Characteristics of Memory Windows of MFMIS Gate Structures (MFMIS 게이트 구조에서의 메모리 윈도우 특성)

  • Park, Jun-Woong;Kim, Ik-Soo;Shim, Sun-Il;Youm, Min-Soo;Kim, Yong-Tae;Sung, Man-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.319-322
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    • 2003
  • To match the charge induced by the insulators $CeO_2$ with the remanent polarization of ferro electric SBT thin films, areas of Pt/SBT/Pt (MFM) and those of $Pt/CeO_2/Si$ (MIS) capacitors were ind ependently designed. The area $S_M$ of MIS capacitors to the area $S_F$ of MFM capacitors were varied from 1 to 10, 15, and 20. Top electrode Pt and SBT layers were etched with for various area ratios of $S_M\;/\;S_F$. Bottom electrode Pt and $CeO_2$ layers were respectively deposited by do and rf sputtering in-situ process. SBT thin film were prepared by the metal orgnic decomposition (MOD) technique. $Pt(100nm)/SBT(350nm)/Pt(300nm)/CeO_2(40nm)/p-Si$ (MFMIS) gate structures have been fabricated with the various $S_M\;/\;S_F$ ratios using inductively coupled plasma reactive ion etching (ICP-RIE). The leakage current density of MFMIS gate structures were improved to $6.32{\times}10^{-7}\;A/cm^2$ at the applied gate voltage of 10 V. It is shown that in the memory window increase with the area ratio $S_M\;/\;S_F$ of the MFMIS structures and a larger memory window of 3 V can be obtained for a voltage sweep of ${\pm}9\;V$ for MFMIS structures with an area ratio $S_M\;/\;S_F\;=\;6$ than that of 0.9 V of MFS at the same applied voltage. The maximum memory windows of MFMIS structures were 2.28 V, 3.35 V, and 3.7 V with the are a ratios 1, 2, and 6 at the applied gate voltage of 11 V, respectively. It is concluded that ferroelectric gate capacitors of MFMIS are good candidates for nondestructive readout-nonvolatile memories.

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Degradation of the Pd catalytic layer electrolyte in dye sensitized solar cells (염료감응태양전지에서 Pd 촉매층의 전해질과의 반응에 따른 특성 저하)

  • Noh, Yunyoung;Song, Ohsung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.14 no.4
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    • pp.2037-2042
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    • 2013
  • A TCO-less palladium (Pd) catalytic layer on the glass substrate was assessed as the counter electrode (CE) in a dye sensitized solar cell (DSSC) to confirm the stability of Pd with the $I^-/I_3{^-}$electrolyte on the DSSC performance. A 90nm-thick Pd film was deposited by a thermal evaporator. Finally, DSSC devices of $0.45cm^2$ with glass/FTO/blocking layer/$TiO_2$/dye/electrolyte(10 mM LiI + 1 mM $I_2$ + 0.1 M $LiClO_4$ in acetonitrile solution)/Pd/glass structure was prepared. We investigated the microstructure and photovoltaic property at 1 and 12 hours after the sample preparation. The optical microscopy, field emission scanning electron microscopy (FESEM), cyclic voltammetry measurement (C-V), and current voltage (I-V) were employed to measure the microstructure and photovoltaic property evolution. Microstructure analysis showed that the corrosion by reaction between the Pd layer and the electrolyte occurred as time went by, which led the decrease of the catalytic activity and the efficiency. I-V result revealed that the energy conversion efficiency after 1 and 12 hours was 0.34% and 0.15%, respectively. Our results implied that we might employ the other non-$I^-/I_3{^-}$electrolyte or the other catalytic metal layers to guarantee the long term stability of the DSSC devices.

Surface Characteristics of Type II Anodized Ti-6Al-4V Alloy for Biomedical Applications

  • Lee, Su-Won;Jeong, Tae-Gon;Yang, Jae-Ung;Jeong, Jae-Yeong;Park, Gwang-Min;Jeong, Yong-Hun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2017.05a
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    • pp.77-77
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    • 2017
  • Titanium and its alloys offer attractive properties in a variety of applications. These are widely used for the field of biomedical implants because of its good biocompatibility and high corrosion resistance. Titanium anodizing is often used in the metal finishing of products, especially those can be used in the medical devices with dense oxide surface. Based on SAE/AMS (Society of Automotive Engineers/Aerospace Material Specification) 2488D, it has the specification for industrial titanium anodizing that have three different types of titanium anodization as following: Type I is used as a coating for elevated temperature forming; Type II is used as an anti-galling coating without additional lubrication or as a pre-treatment for improving adherence of film lubricants; Type III is used as a treatment to produce a spectrum of surface colours on titanium. In this study, we have focused on Type II anodization for the medical (dental and orthopedic) application, the anodized surface was modified with gray color under alkaline electrolyte. The surface characteristics were analyzed with Focused Ion Beam (FIB), Scanning Electron Microscopy (SEM), surface roughness, Vickers hardness, three point bending test, biocompatibility, and corrosion (potentiodynamic) test. The Ti-6Al-4V alloy was used for specimen, the anodizing procedure was conducted in alkaline solution (NaOH based, pH>13). Applied voltage was range between 20 V to 40 V until the ampere to be zero. As results, the surface characteristics of anodic oxide layer were analyzed with SEM, the dissecting layer was fabricated with FIB method prior to analyze surface. The surface roughness was measured by arithmetic mean deviation of the roughness profile (Ra). The Vickers hardness was obtained with Vickers hardness tester, indentation was repeated for 5 times on each sample, and the three point bending property was verified by yield load values. In order to determine the corrosion resistance for the corrosion rate, the potentiodynamic test was performed for each specimen. The biological safety assessment was analyzed by cytotoxic and pyrogen test. Through FIB feature of anodic surfaces, the thickness of oxide layer was 1.1 um. The surface roughness, Vickers hardness, bending yield, and corrosion resistance of the anodized specimen were shown higher value than those of non-treated specimen. Also we could verify that there was no significant issues from cytotoxicity and pyrogen test.

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The humidity effect of YBCO film by TFA-MOD process (TFA-MOD법으로 제조된 YBCO 박막의 습도분압 효과)

  • Jang, Seok-Hern;Lim, Jun-Hyung;Yoon, Kyung-Min;Lee, Seung-Yi;Kim, Kyu-Tae;Lee, Chang-Min;Joo, Jin-Ho;Nah, Wan-Soo;Lee, Hee-Gyoun;Hong, Gye-Won
    • Progress in Superconductivity
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    • v.8 no.1
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    • pp.65-70
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    • 2006
  • We fabricated $YBa_2Cu_33O_{7-x}$(YBCO) films on(00l) $LaAlO_3$ substrates prepared by metal organic deposition(MOD) method using trifluoroacetate(TFA) solution and evaluated the effects of the humidity on the microstructure, phase purity, and critical properties. The films calcined at $430^{\circ}C$ were fired at $775^{\circ}C$ at 0%, 4.2%, 12.1%, and 20.0% humidified As gas mixed with 0.1% $O_2$. We observed that the amount of $BaF_2$ phase was effectively reduced and that a sharp and strong biaxial texture formed under a humidified atmosphere, leading to increased critical properties. For the films fired at 0% humidity, the $T_c\;and\;I_c$ were undetectably small. When the humidity was increased to 4.2%, the corresponding $T_c$(onset) and $I_c$ were increased to 90.5 K and 8 A/cm-width, respectively. For the films at the humidity range of 12.1-20.0%, the $I_c$ was found to be 35 A/cm-width. According to the results of the XRD, pole-figure, and SEM, these improved critical properties are probably attributed to the formation of a purer YBCO phase, larger grain size, and stronger c-axis orientation.

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