• 제목/요약/키워드: Metal core

검색결과 622건 처리시간 0.025초

Mg2+-dependency of the Helical Conformation of the P1 Duplex of the Tetrahymena Group I Ribozyme

  • Lee, Joon-Hwa
    • Bulletin of the Korean Chemical Society
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    • 제29권10호
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    • pp.1937-1940
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    • 2008
  • The P1 duplex of Tetrahymena group I ribozyme is the important system for studying the conformational changes in folding of ribozyme. The formation of the P1 duplex between IGS and substrate RNA and the catalytic activity of ribozyme require a variety of metal ions such as $Mg^{2+}$ and $Mn^{2+}$. In order to investigate the effect of the $Mg^{2+}$ concentration on the conformation of the P1 duplex, the NMR study was performed as a function of $Mg^{2+}$ concentration. This study revealed that the less stable AU-rich region formed duplex at $50{^{\circ}C}$ under high $Mg^{2+}$ concentration condition but melts out under low $Mg^{2+}$ concentration condition. It was also found that in the active conformation under 10 mM $MgCl_2$ condition, the unstable central G${\cdot}$U wobble pair maintains the significant base pairing up to $50{^{\circ}C}$. This study provides the information of the unique feature of the P1 duplex structure and the roll of $Mg^{2+}$ ion on the formation of the active conformation.

Immunogenicity and Protective Efficacy of a Dual Subunit Vaccine Against Respiratory Syncytial Virus and Influenza Virus

  • Park, Min-Hee;Chang, Jun
    • IMMUNE NETWORK
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    • 제12권6호
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    • pp.261-268
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    • 2012
  • Respiratory syncytial virus (RSV) and influenza virus are the most significant pathogens causing respiratory tract diseases. Composite vaccines are useful in reducing the number of vaccination and confer protection against multiple infectious agents. In this study, we generated fusion of RSV G protein core fragment (amino acid residues 131 to 230) and influenza HA1 globular head domain (amino acid residues 62 to 284) as a dual vaccine candidate. This fusion protein, Gcf-HA1, was bacterially expressed, purified by metal resin affinity chromatography, and refolded in PBS. BALB/c mice were intranasally immunized with Gcf-HA1 in combination with a mucosal adjuvant, cholera toxin (CT). Both serum IgG and mucosal IgA responses specific to Gcf and HA1 were significantly increased in Gcf-HA1/CT-vaccinated mice. To determine the protective efficacy of Gcf-HA1/CT vaccine, immunized mice were challenged with RSV (A2 strain) or influenza virus (A/PR/8/34). Neither detectable viral replication nor pathology was observed in the lungs of the immune mice. These results demonstrate that immunity induced by intranasal Gcf-HA1/CT immunization confers complete protection against both RSV and homologous influenza virus infection, suggesting our Gcf-HA1 vaccine candidate could be further developed as a dual subunit vaccine against RSV and influenza virus.

Analysis of buckling response of functionally graded sandwich plates using a refined shear deformation theory

  • Abdelhak, Z.;Hadji, L.;Khelifa, Z.;Hassaine Daouadji, T.;Adda Bedia, E.A.
    • Wind and Structures
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    • 제22권3호
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    • pp.291-305
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    • 2016
  • In this paper, a refined shear deformation plate theory which eliminates the use of a shear correction factor was presented for FG sandwich plates composed of FG face sheets and an isotropic homogeneous core. The theory accounts for parabolic distribution of the transverse shear strains and satisfies the zero traction boundary conditions on the surfaces of the plate. The mechanical properties of the plate are assumed to vary continuously in the thickness direction by a simple power-law distribution in terms of the volume fractions of the constituents. Based on the present refined shear deformation plate theory, the governing equations of equilibrium are derived from the principle of virtual displacements. Numerical illustrations concern buckling behavior of FG sandwiches plates with Metal-Ceramic composition. Parametric studies are performed for varying ceramic volume fraction, volume fraction profiles, Boundary condition, and length to thickness ratios. The accuracy of the present solutions is verified by comparing the obtained results with the existing solutions.

An 8-b 1GS/s Fractional Folding CMOS Analog-to-Digital Converter with an Arithmetic Digital Encoding Technique

  • Lee, Seongjoo;Lee, Jangwoo;Lee, Mun-Kyo;Nah, Sun-Phil;Song, Minkyu
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제13권5호
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    • pp.473-481
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    • 2013
  • A fractional folding analog-to-digital converter (ADC) with a novel arithmetic digital encoding technique is discussed. In order to reduce the asymmetry errors of the boundary conditions for the conventional folding ADC, a structure using an odd number of folding blocks and fractional folding rate is proposed. To implement the fractional technique, a new arithmetic digital encoding technique composed of a memory and an adder is described. Further, the coding errors generated by device mismatching and other external factors are minimized, since an iterating offset self-calibration technique is adopted with a digital error correction logic. A prototype 8-bit 1GS/s ADC has been fabricated using an 1.2V 0.13 um 1-poly 6-metal CMOS process. The effective chip area is $2.1mm^2$(ADC core : $1.4mm^2$, calibration engine : $0.7mm^2$), and the power consumption is 88 mW. The measured SNDR is 46.22 dB at the conversion rate of 1 GS/s. Both values of INL and DNL are within 1 LSB.

A 3 V 12b 100 MS/s CMOS D/A Converter for High-Speed Communication Systems

  • Kim, Min-Jung;Bae, Hyuen-Hee;Yoon, Jin-Sik;Lee, Seung-Hoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제3권4호
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    • pp.211-216
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    • 2003
  • This work describes a 3 V 12b 100 MS/s CMOS digital-to-analog converter (DAC) for high-speed communication system applications. The proposed DAC is composed of a unit current-cell matrix for 8 MSBs and a binary-weighted array for 4 LSBs, trading-off linearity, power consumption, chip area, and glitch energy with this process. The low-glitch switch driving circuits are employed to improve linearity and dynamic performance. Current sources of the DAC are laid out separately from the current-cell switch matrix core block to reduce transient noise coupling. The prototype DAC is implemented in a 0.35 um n-well single-poly quad-metal CMOS technology and the measured DNL and INL are within ${\pm}0.75$ LSB and ${\pm}1.73$ LSB at 12b, respectively. The spurious-free dynamic range (SFDR) is 64 dB at 100 MS/s with a 10 MHz input sinewave. The DAC dissipates 91 mW at 3 V and occupies the active die area of $2.2{\;}mm{\;}{\times}{\;}2.0{\;}mm$

The Spectra Investigation of the Halo Planetary Nebula BoBn 1

  • Hyung, Siek;Otsuka, Masaaki;Tajitsu, Akito;Izumiura, Hideyuki
    • 천문학회보
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    • 제35권2호
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    • pp.72.2-72.2
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    • 2010
  • The extremely metal-poor halo planetary nebula BoBn 1 has been investigated based on IUE archive data, Subaru/HDS spectra, VLT/UVES archive data, and Spitzer/IRS spectra. We have measured a heliocentric radial velocity of $+191.6\pm1.3\;kms^{-1}$ and expansion velocity 2Vexp of $40.5\pm3.3\;kms^{-1}$ from an average over 300 lines. The estimations of C, N, O, and Ne abundances from the optical recombination lines (ORLs) and Kr, Xe, and Ba from the collisional excitation lines (CELs) are also done. We have detected 5 fluorine and several slow neutron capture elements (the s-process). The amounts of [F/H], [Kr/H], and [Xe/H] suggest that BoBn 1 is the most F-rich among F detected PNe and is a heavy s-process element rich PN. The photo-ionization models built with non-LTE theoretical stellar atmospheres indicate that the progenitor was a 1-1.5 $M_\bigstar$ that would evolve into a white dwarf with an $0.62M_{\odot}$ core mass and $0.09M_{\odot}$ ionized nebula. Careful examination implies that BoBn 1 has evolved from a binary and experienced coalescence during the evolution to become a visible PN. The elemental abundances except N could be explained by a binary model composed of $0.75M_{\odot}+1.5M_{\odot}$ stars.

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WLP and New System Packaging Technologies

  • WAKABAYASHI Takeshi
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
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    • pp.53-58
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    • 2003
  • The Wafer Level Packaging is one of the most important technologies in the semiconductor industry today. Its primary advantages are its small form factor and low cost potential for manufacturing including test procedure. The CASIO's WLP samples, application example and the structure are shown in Fig.1, 2&3. There are dielectric layer , under bump metal, re-distribution layer, copper post , encapsulation material and terminal solder .The key technologies are 'Electroplating thick copper process' and 'Unique wafer encapsulation process'. These are very effective in getting electrical and mechanical advantages of package. (Fig. 4). CASIO and CMK are developing a new System Packaging technology called the Embedded Wafer Level Package (EWLP) together. The active components (semiconductor chip) in the WLP structure are embedded into the Printed Wiring Board during their manufacturing process. This new technical approach has many advantages that can respond to requirements for future mobile products. The unique feature of this EWLP technology is that it doesn't contain any solder interconnection inside. In addition to improved electrical performance, EWLP can enable the improvement of module reliability. (Fig.5) The CASIO's WLP Technology will become the effective solution of 'KGD problem in System Packaging'. (Fig. 6) The EWLP sample shown in Fig.7 including three chips in the WLP form has almost same structure wi_th SoC's. Also, this module technology are suitable for RF and Analog system applications. (Fig. 8)

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Full CMOS Single Supply PLC SoC ASIC with Integrated Analog Front-End

  • Nam, Chul;Pu, Young-Gun;Kim, Sang-Woo;Lee, Kang-Yoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제9권2호
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    • pp.85-90
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    • 2009
  • This paper presents a single supply PLC SoC ASIC with a built-in analog Front-end circuit. To achieve the low power consumption along with low cost, this PLC SoC employs fully CMOS Analog Front End (AFE) and several LDO regulators (LDOs) to provide the internal power for Logic Core, DAC and Input/output Pad driver. The receiver part of the AFE consists of Pre-amplifier, Gain Amplifier and 1 bit Comparator. The transmitter part of the AFE consists of 10 bit Digital Analog Converter and Line Driver. This SoC is implemented with 0.18 ${\mu}m$ 1 Poly 5 Metal CMOS Process. The single supply voltage is 3.3 V and the internal powers are provided using LDOs. The total power consumption is below 30 mA at stand-by mode to meet the Eco-Design requirement. The die size is 3.2 $\times$ 2.8 $mm^{2}$.

Al-Li-(Be)합금 주괴의 미세조직과 기계적 성질 (Microstructure and Mechanical Properties in Al-Li-(Be) Alloys.)

  • 은일상;조현기
    • 한국주조공학회지
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    • 제10권5호
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    • pp.417-425
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    • 1990
  • The purpose of this study is to investigate the effect of Be addition on the microstructure and mechanical properties of as-cast and homogenization treated Al-Li-(Be)alloys. The ductility of as-cast Al-Li alloy was increased by the addition of Be and the fracture morphology was changed from brittle to ductile mode. Also, hardness and strength have been decreased by homogenization treatment. The morphology of eutectic structure which consists of ${\alpha}(Al)$ and ${\alpha}(Be)$ was changed from lammellae to spherical type by homogenization treatment. The shape of ${\alpha}(Be)$ phase has been revealed as hollow type by TEM observation. It consists of outer surfaces with well defined crystal facets and the core filled with ${\alpha}(Al)$. The microstructure of as-cast Al-Li-Be alloys showed coarse ${\delta}'$, fine ${\delta}'$, and coarse ${\delta}$ phases. The coarse and fine ${\delta}'$ phases were formed at Be-rich phase /matrix interfaces and in matrix, respectively. By homogenization treatment, the ${\delta}$ phase in Al-Li and Al-Li-Be alloys dissolved and the size of ${\delta}$ phase in Al-Li-Be alloys was finer than that of Al-Li alloy.

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Photoelectron Spectroscopic Investigation of Ag and Au Deposited Amorphous In-Ga-Zn-O Thin Film Surface

  • 강세준;백재윤;신현준
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.338.2-338.2
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    • 2014
  • 투명반도체산화물은 우수한 광학적, 전기적 특성을 가지고 있기 때문에 차세대 박막트랜지스터의 채널층으로 각광을 받고 있다. 특히, 그 중에서도 a-IGZO를 이용한 TFT는 높은 가시광선 투과율(>80%)과 큰 전하이동도(>10 cm2/Vs) 를 갖는 등 좋은 광학적, 전기적 특성을 갖기 때문에 많은 연구가 이루어졌다. 여러 연구들에 의하면, a-IGZO TFT는 소스/드레인의 전극으로 어떤 물질을 사용하는지에 따라서 동작특성에 큰 영향을 미치는 것으로 알려져 있다. 일반적으로, a-IGZO 박막은 n형 반도체로써 일함수가 작은 금속과는 ohmic contact를 형성하고, 일함수가 큰 금속과는 Schottky barrier를 형성한다고 알려져 있다. 이와 관련된 대부분의 이전의 연구들에서는 각각의 전극물질에 따라 전기적인 특성변화에 초점을 맞춰서 연구하였다. 본 연구에서는 일함수가 작은 Ag와 일함수가 큰 Au를 a-IGZO의 박막 위에 얇게 증착하면서 이에 따른 고분해능 광전자분광(high-resolution x-ray photoelectron spectroscopy) 정보의 변화를 분석함으로써, 금속의 증착에 따른 금속층과 a-IGZO 표면 및 계면에서의 화학적 상태의 변화를 연구하였다. Au 4f, Ag 3d는 metallic property를 나타내기 이전까지는 lower binding energy(BE) 쪽으로 shift하였으며, In 3d 또한 lower BE 성분이 크게 증가하였다. O 1s, Ga 3d, Zn 3d들은 상대적으로 적은 변화를 나타내었는데, 이는 Ag, Au가 In과 상대적으로 더 많이 상호작용한다는 것을 의미한다. 본 발표에서는 이들 core level의 정보들과, 가전자대의 분광정보, 그리고 band bending의 정보가 제시될 것이며, 이 정보들은 metal 증착에 따른 contact 특성을 이해하는데 기여할 것으로 기대한다.

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