• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.439-442
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• 2001

Chalcogenide glassy semiconductors(CGS) can be obtained by the melt quenching technique. We have investigated the thin film heterostructures : metal-chalcogenide glassy semiconductors, where metal is copper, and chalcogenide glassy semiconductors are glasses of the system As-Se. CU/CGS film heterostructure were produced in the vacuum evaporator by the method of vacuum thermal evaporation. Doped films are very sensitive to external actions, and this property allows developing supersensitive precision sensors of temperature, humidity, illumination, and etc. based on them. Cu/CGS film has shown that resistance strongly depend on the temperature. The ratio of resistance vs. temperature has shown over a 2 k$\Omega$/degree. The slop of temperature and resistance shows linear.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.727-730
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• 2002

Chalcogenide glassy semiconductors(CGS) can be obtained by the melt quenching technique. We have investigated the thin film heterostructures : metal-chalcogenide glassy semiconductors, where metal is copper, and chalcogenide glassy semiconductors are glasses of the system As-Se. Cu/CGS film heterostructure were produced in the vacuum evaporator by the method of vacuum thermal evaporation. Doped films are very sensitive to external actions, and this property allows developing supersensitive precision sensors of temperature, humidity, illumination, and etc. based on them. Cu/CGS film has shown that resistance strongly depend on the temperature. The slop of temperature and resistance shows linear.

• 전기의세계
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• v.29 no.2
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• pp.111-117
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• 1980

Contacts formed by vacuum evaporation of As-Te-Si-Ge chalcogenide glass onto Al metal (99.9999%) are studied by measuring paralle capacitance C(V), Cp(w), resistance R(V), Rp(w), and I-V characteristics. The fact that contact metal alloying produced high-resistance region is confirmed from the measurements of parallel capacitance and resistance. From the I-V characteristics in the pre-switcing region, it is found that electronic conduction and sitching occurs in the vicinity of metal-amorphous semiconductor interface. From the experimental obsevations, it is concuded that the current flow in the thin film is space-charge limited current (SCLC) due to the tunneling of electrons through the energy barriers.

• Vacuum Magazine
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• v.5 no.2
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• pp.10-17
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• 2018

Chalcogenide and oxide heterostructures have been studied as a next-generation electronic materials, due to their interesting electronic properties, such as direct bandgap semiconductor, ferroelectricity, ferromagnetism, superconductivity, charge-density waves, and metal-insulator transition, and their modification near heterointerfaces, so called, electronic reconstruction. An angle-resolved photoemission spectroscopy (ARPES) is a powerful technique to unveil such novel electronic phases in detail, especially combined with high quality thin film preparation methods, such as, molecular beam epitaxy and pulsed laser deposition. In this article, the recent ARPES results in chalcogenide and oxide thin films will be introduced.

• Bulletin of the Korean Chemical Society
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• v.21 no.10
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• pp.989-994
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• 2000

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.343-344
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• 2012

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.326-326
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• 2014

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.19 no.3
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• pp.388-393
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• 2010

In recent years the research has been focused on the preparation of special glasses, i.e., chalcogenide and heavy metal oxide ones that can transmit optical radiation above 2 um and also other optical parameters exceed those of silica based glasses. The attention in this paper is focused on chalcogenide glasses, on preparation of high quality base glass, for an application in infrared optical product design and manufacture. The amorphous materials of As-Se and Ge-As-Se chalcogenides were prepared by a standard melt-quenching technique. The compositions were mesaured by ICP-AES and EPMA, and structural and thermal properties were studied through various annealing processes. Several anomalies of glass transition and crystallization were observed in the DSC/DTA/TG results of the chalcogenide glass.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.164-164
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• 2007

Photodiffusion of silver into chalcogenide thin film is one of the most interesting effects that occurs in chalcogenide glass as it theatrically changes the properties of the initial material and forms a ternary. Programmable Metallization Cell(PMC) Randon Access Memory use for photodiffusion of mobile metal is based on the electrochemical growth and removal of nanoscale metallic pathway in thin film of solid electrolyte. This paper investigates the annling properties on Ag-doped $Ge_{25}Se_{75}$ thin film structure and describes the electrical characteristics of PMC-RAM. The composition of the intercalation products containing Ag is confirmed using X-ray diffraction which shows the formation of Ag-doped $Ge_{25}Se_{75}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.826-829
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• 2003

Metal/chalcogenide glass semiconductor(CGS) thin film devices were produced in the vacuum evaporator by the methode of vacuum thermal evaporation. We investigated the influence of the correlations of thickness of metal and CGS upon the concentration of Metal in a CGS thin film. It has shown that M/CGS thin film devices were very sensitive to temperature.