• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.542-546
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• 1999

InP single crystal, III-V binary compound semiconductor, was grown by VGF(vertical gradient freeze) method using quartz ampoule and its electrical optical properties were investigated. Phosphorous powders were put in the bottom of quartz ampoule and Indium metal charged in conical quartz crucible what was attached at the upper side position inside the quartz ampoule. It was vacuous under the pressure of $10^5$Torr and sealed up. Indium metal was melted at $1070^{\circ}C$ and InP composition was formed by diffusion of phosphorous sublimated at $450^{\circ}C$ into Indium melt. By cooling the InP composition melt ($2^{\circ}C$~$5^{\circ}C$/hr of cooling rate) in range of $1070^{\circ}C$~$900^{\circ}C$, InP crystal was grown. The grown InP single crystals were investigated by X-ray analysis and polarized optical microscopy. Electrical properties were measured by Van der Pauw method. At the cooling method. At the cooling rate of $2^{\circ}C$/hr, growth direction of ingot was [111] and the quality of ingot was better at the upper side of ingot than the lower side. It was found that the InP crystals were n-type semiconductor and the carrier concentration, electron mobility and relative resistivity were $10^{15}$~$10^{16}/\textrm{cm}^3$ , $2\times 10^3$~$3\times 10^4{\textrm}{cm}^2$/Vsec and$2\times 10^{-1}$~$2\times 10^{-3}$/ Wcm in the range of 150K~300K, respectively.

• Korean Chemical Engineering Research
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• v.45 no.6
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• pp.627-632
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• 2007

A fundamental study on the melt decontamination of metal wastes generated by dismantling the nuclear facility, the melting of metal wastes such as stainless steel and carbon steel have been carried out to investigate the distribution phenomena of the radioisotopes such as $^{60}Co$ and $^{137}Cs$ into the ingot, slag and dust phases by using the various slag types, slag concentration and basicity in an arc furnace. The $^{60}Co$ remained homogeneously in the ingot phase above 90 % and it was barely present in the slag below 10 %. The effect of the slag composition on the distribution for Co-60 was not considerable, but a basic slag former with high fluidity showed effective. $^{137}Cs$ was completely eliminated from the melt of the stainless steel as well as the carbon steel and distributed to the slag and the dust phase.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.2
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• pp.808-816
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• 2012

This paper is the study for the directional solidification of the ingot through the thermal analysis simulation and structural change of casting furnace. With the results of thermal analysis simulation, the silicon as a whole has reached the melting temperature as the retention time 80 min. The best cooling conditions showed at the upper cooling temperature $1,400^{\circ}C$ and cooling time 60min. The fabricated wafers showed the superior etching result at the grain boundary than that of existing commercial wafers. The FTIR measurements of oxygen and carbon impurities were not in the critical value for solar conversion efficiency. The NAA analysis of metal impurities were also detected the total number of 18 different metals, but the concentration distribution showed no significant positional deviations in the same position from the top to the bottom.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.4
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• pp.1915-1920
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• 2013

This paper is the study for the directional solidification of the ingot through the thermal analysis simulation and structural change of casting furnace. With the results of thermal analysis simulation, the silicon as a whole has reached the melting temperature as the retention time 80 min. The best cooling conditions showed at the upper cooling temperature $1,400^{\circ}C$ and cooling time 60min. The fabricated wafers showed the superior etching result at the grain boundary than that of existing commercial wafers. The FTIR measurements of oxygen and carbon impurities were not in the critical value for solar conversion efficiency. The NAA analysis of metal impurities were also detected the total number of 18 different metals, but the concentration distribution showed no significant positional deviations in the same position from the top to the bottom.

• Electrical & Electronic Materials
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• v.7 no.2
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• pp.130-137
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• 1994

Indium, element of group III, was refined by using zone refining for high purity refinement. We have found the impurities of T1, Zn, Fe, Cd, Pb, Ni, Cu, Sn in the refined indium with ICP-AES, so that 3.9 weight ppm of T1 was reduced to less than 1 ppm, 1.0 weight ppm of Zn was reduced to 0.7 ppm, 2.8 weight ppm of Cd was reduced to 2.5 ppm and 14.0 weight ppm of Sn was reduced to 6.7 ppm with 5 melten zone passes only. 3.9 weight ppm of T1 was reduced to less than 1 ppm, 1.0 weight ppm of Zn was reduced to 0.3 ppm, 2.8 weight ppm of Cd was reduced to less than 1.0 ppm and 14.0 weight ppm of Sn was reduced to 0.4 ppm after vacuum baking with 5 melten zone passes. The surface morpholgy of metal Indium thin film in each conditions showed that porosities were reduced in the front of sampled ingot after vacuum baking with 5 zone melten zone passes. The average electrical resistivity of Indium thin film was reduced from 1.4*10$^{-3}$ .ohm.-cm in Indium origin ingot to 7.9*10$^{-6}$ .ohm.-cm after zone refined with 5 melten zone passes.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.17 no.2
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• pp.85-91
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• 1981

An equation was derived which describes the slip force that occurs at the casting of initial state due to unequilibrium with support bar weight, liquid metal, casting velocity, thickness, control roller, hydraulic motor and etc. The slip force equations are solved on the basis of velocity, gravity and thickness in casting ingot. In this paper the auther assumed that the other mechanisms are normal. The behaviour of slip force in many characteristics is calculated as a function of velocity, gravity and thickness with variation. The conclusion with this phenomena is reached that the present theory realistically predicts the growth of slip force in a flat plate ingot continuous casting machine.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2005.06a
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• pp.426-427
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• 2005

Advanced Spent Fuel Conditioning Process (ACP) is a pyrochemical process in which the spent fuel of PWR is transformed into the uranic metal ingot. Through this process, which has been developed in KAERI since 1998, the radioactivity, the radiotoxicity, the heat and the volume of the PWR spent fuel are reduced by a quarter of the original. To demonstrate a lab-scale process and extract the data for the later pilot-scale process, a demonstration facility of ACP (ACPF) is under construction and the lab-scale demonstration is slated for 2006. To establish the safeguardability of ACPF, a safeguards system including a neutron counter based on non-destructive assay, which is named as ACP Safeguards Neutron Counter (ASNC), the ACP Safeguards Surveillance System (ASSS) which consists of two neutron monitors and five IAEA cameras, and Laser Induced Breakdown System (LIBS) have been developed and are ready to be installed at ACPF. The target materials of ACP to assay with ASNC are categorized into three types among which the first is the uranic metal ingot, the second is the salt waste and the last is $UO_2$ and $U_{3}O_8$ powders, rod cuts and hulls. The Pu content of process nuclear materials can be accounted with ASNC. The ASSS is integrated in the ACP Intelligent Surveillance Software (AISS) in which the IAEA camera images and background signals at the rear doors of ACPF are displayed. The composition of special nuclear materials of ACP can be measured with LIBS which can be a supporting measurement tool for ASNC. The conceptual picture of safeguards system of ACPF is shown in Fig. 1.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.419-431
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• 1999

InP, III-V binary compound semiconductor, single crystal was grown by VGF (vertical gradient freeze) method using quartz ampoule and its electrical optical properties were investigated. Phosphorous powders were put in the bottom of quartz ampoule and Indium metal changed in conical quartz crucible hat was attached at the upper side position inside the quartz ampoule. It was vacuous under the pressure of 10-5 Torr and sealed up. In metal in the quartz crucible was melted at 1070$^{\circ}C$ and phophorous sublimated at 450$^{\circ}C$, there after it was diffused in In melt and so InP composition was formed. By cooling the InP composition melt (2$^{\circ}C$∼5$^{\circ}C$/hr of cooling rate) in range of 1070$^{\circ}C$∼900$^{\circ}C$, InP crystal was grown. the grown InP single crystals were investigated by X-ray analysis and polarized optical microscopy. Electrical properties of them were measured by Van der Pauw method. At the cooling rate of 2$^{\circ}C$/hr, its direction was (111), quality of the ingot ws better upper side of the ingot than lower. It was found that the InP crystals were n-type semiconductor and the carrier concentration, electron mobility and relative resistivity were 1015∼1016/㎤, 2x103∼3x104$\textrm{cm}^2$/Vsec and 2x10-1∼2x10-3Ωcm in the range of 150K∼300K, respectively.

• Journal of the Korean Applied Science and Technology
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• v.27 no.2
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• pp.208-215
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• 2010

EAF dust which is contained around 30% of zinc, 15% of iron and 3% of lead individually, is chemically treated by ammonium chloride, ammonia water, ammonia gas and carbon dioxide, and also tested and identified the ratios of the recovery of In by applied the variations of particle size, pH and heating temperature as well, in order to getting optimized recovery of the In metal after performing all of those processes. Experimental results showed that the rate of Zn recovery is 97% when the mixture of 1.3 of $NH_4Cl$/EAF is heated to the temperature of $400^{\circ}C$ and leached by water, and 95% recovery of In when ammonia gas and carbon dioxide is added simultaneously and adjust the 9.5 of pH to the same mixture above. For the purpose of remove the impurities in the mixed sample, which is prepared by the two samples, indicated above showing as the ratio of 95% and 97% recovery, in case of applied the cementation process to it, and also by electrolytic process, produced the In plate of 95~97%, and acquired 99-99.5% of In metal ingot finally by applied the heating process at $470{\sim}500^{\circ}C$.

• Transactions of the Korean Society of Mechanical Engineers
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• v.1 no.2
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• pp.113-124
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• 1977

By spplying the ultrasomic wave to the solidifing liquid metal, grain sizes of the ingot are refined and the structures are homogenized. One of the reason is the enhancement of nucleation by ultrasonic vibration. According to the reports on this subject, the uncleating conditions are formed by the increse of melting point which is produced by the high pressure due to caviation. In this paper we study whether the caviations are the orgin of the nucleation and analized whether the nucleating conditions are formed by the increase of melting point or not and also compared the analytical result with the experim nt. We analized the pressure change induced by cllaphsing of cavity and the motion of cavith in oscillating pressure field. And we further analized the variation of melting point with pressure change.