• Journal of the Semiconductor & Display Technology
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• v.13 no.3
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• pp.13-19
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• 2014

Phosphoric acid was used as etching agent instead of conventional peroxide - based chemicals for forming pattern of ultra definition display. Etchant was synthesized by mixing etching agent, oxidation agent, buffer solution, and additive into solvent, deionized water. Thicknesses of copper, main metal of ultra definition display, for etching, were 10,000 and $30,000{{\AA}}$. Etch stop of good low skew for proper pattern formation has been occurred at the content ratio of phosphoric acid 60 - 64%, nitric acid 4 - 5%, additive(potassium acetate) 1 - 3%. Buffer solution(acetic acid) decreased the metal contact angle $63.07^{\circ}$ to $42.49^{\circ}$ for benefiting pattern formation. Content variations on four components (phosphoric acid, nitric acid, acetic acid, potassium acetic acid) of the etchant with storage time were within 3 wt% after 24 hrs of etching work.

• Applied Chemistry for Engineering
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• v.10 no.1
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• pp.67-72
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• 1999

Optimal pretreatment processes for metal plating on engineering plastics, especially on Nylon-inorganic filler alloy was studied. For Nylon-inorganic filler alloy, adhesion strength between resin surface and metal could be improved by just etching process that eliminate amorphous layer. In the SEM picture and surface roughness measurement, etching treatment was found to make enabled the surface condition very rough and the adhesion strength good. It was also found that the surface condition of plated article and its adhesion strength partly depended upon molding condition of Nylon-inorganic filler alloy. EDS, peaks showed that what kinds of and how much of the metal elements remained on the resin surface after pretreatment processes. Cr did not affect on adsorption of Sn and Pd remarkably.

• Korean Journal of Materials Research
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• v.16 no.3
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• pp.151-156
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• 2006

A method for fabrication of nano-scale GaN structure by inductively coupled plasma etching is proposed, exploiting a thermal dewetting of Pt thin film as an etch mask. The nano-scale Pt metal islands were formed by the dewetting of 2-dimensional film on $SiO_2$ dielectric materials during rapid thermal annealing process. For the case of 30 nm thick Pt films, pattern formation and dewetting was initiated at temperatures greater $600^{\circ}C$. Controlling the annealing temperature and time as well as the thickness of the Pt metal film affected the size and density of Pt islands. The activation energy for the formation of Pt metal island was calculated to be 23.2 KJ/mole. The islands show good resistance to dry etching by a $CF_4$ based plasma for dielectric etching indicating that the metal islands produced by dewetting are suitable for use as an etch mask in the fabrication of nano-scale structures.

• Korean Journal of Materials Research
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• v.22 no.9
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• pp.482-488
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• 2012

To fabricate a precise micro metal mold, the electrochemical etching process has been researched. We investigated the electrochemical etching process numerically and experimentally to determine the etching tendency of the process, focusing on the current density, which is a major parameter of the process. The finite element method, a kind of numerical analysis, was used to determine the current density distribution on the workpiece. Stainless steel(SS304) substrate with various sized square and circular array patterns as an anode and copper(Cu) plate as a cathode were used for the electrochemical experiments. A mixture of $H_2SO_4$, $H_3PO_4$, and DIW was used as an electrolyte. In this paper, comparison of the results from the experiment and the numerical simulation is presented, including the current density distribution and line profile from the simulation, and the etching profile and surface morphology from the experiment. Etching profile and surface morphology were characterized using a 3D-profiler and FE-SEM measurement. From a comparison of the data, it was confirmed that the current density distribution and the line profile of the simulation were similar to the surface morphology and the etching profile of the experiment, respectively. The current density is more concentrated at the vertex of the square pattern and circumference of the circular pattern. And, the depth of the etched area is proportional to the current density.

• Journal of Technologic Dentistry
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• v.38 no.3
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• pp.175-183
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• 2016

Purpose: Observation of Oxide Film Formation and Bonding Strength according to surface treatment of Co-Cr Alloy for porcelain fused to Metal. Methods: metal specimens $0.5mm{\times}25mm{\times}4mm$ in size were made using Co-Cr alloys for porcelain fused to metal crown (Heraenium P, Tae jung Medis). Dental porcelain $0.5mm{\times}25mm{\times}4mm$ in size was sintered on the metal specimens after changing the etching time, sandblasting condition, and heat treatment temperature. Subsequently, the bonding strength was compared by the three-point flexural strength test using a universal testing machine (UTM) to observe the fracture surface and oxidized layers. Results: With regard to the experimental group treated with acid-etching, Specimen 1 treated for 25 minutes (B-3) showed the highest bonding strength, and Specimen 2 treated only with sandblasting showed the most excellent bonding force at 3.5 bar (C-3). With regard to the experimental group treated with sandblasting at 3.5 bar after acid-etching for 25 minutes, Specimen 3 with heat treatment at $980^{\circ}C$ (D-3) showed the highest bonding strength. Conclusion: The specimen which went through both sandblasting and etching, showed an excellent ceramicmetal bond strength.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.375-378
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• 2002

We investigated the reduction of etching damage by additive O$_2$ in etching gas and recovery of etching damage by O$_2$ annealing. The PZT thin films were etched using additive Ar or O$_2$ into Cl$_2$/CF$_4$ gas mixing ratio of 8/2. In order to recover ferroelectric properties of PZT thin films after etching, the etched PZT thin films were annealed at 600 C in O$_2$ atmosphere for 10 min. The remanent polarization is decreased seriously and fatigue is accelerated in the PZT sample etched in Ar/(C1$_2$+CF$_4$) plasma, whereas these characteristics are improved in O$_2$/(Cl$_2$/CF$_4$). From x-ray photoelectron spectroscopy (XPS) analysis, the intensities of Pb-O, Zr-O and Ti-O peaks are changed and the etch byproducts such as metal chloride and metal fluoride are reduced by O$_2$ annealing. From electron probe micro analyzer (EPMA) and auger electron spectroscopy(AES), O$_2$ vacancy is observed after etching. In x-ray diffraction (XRD), the structure damage in the additive O$_2$ into C1$_2$/CF$_4$ is reduced and the improvement of ferroelectric behavioral annealed sample is consistent with the increase of the (100) and (200) PZT peaks.

• Journal of Magnetics
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• v.12 no.2
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• pp.81-83
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• 2007

Etching of NiFe films covered with an organic photo-resist or Ti was successfully performed by an inductively coupled plasma-reactive ion etching (ICP-RIE) system using $CHF_3/O_2/NH_3$ discharges exchanging $CHF_3$ for $CH_4$ gas gradually. Experimental results showed that the organic photo-resist mask can be applied to the NiFe etching. In the case of the Ti metal mask, it was found that the etching-selectivity Ti against NiFe was significantly varied from 7.3 to ${\sim}0$ by changing $CHF_3/CH_4/O_2/NH_3$ to $CH_4/O_2/NH_3$ discharges used in the ICP-RIE system. These results show that the present RIE of NiFe was dominated by a chemical reaction rather than a physical sputtering.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.270-271
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• 2008

The contact resistance between organic semiconductor and source-drain electrode in Bottom Contact Organic Thin-Film Transistors (BCOTFTs) can be effectively reduced by metal oxide/molybdenum double layer structure; metal oxide layers including nickel oxide (NiOx/Mo) and moly oxide(MoOx) under molybdenum work as a high performance carrier injection layer. Step profiles of source-drain electrode can be easily achieved by simultaneous etching of the double layers using the difference etching rate between metal oxides and metal layers.

• Journal of Integrative Natural Science
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• v.6 no.3
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• pp.170-175
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• 2013

Silicon nanowires were detached and obtained from silicon nanowire arrays on silicon substrate using a ultrasono-method. Silicon nanowire arrays on silicon substrate were prepared with an electroless metal assisted etching of p-type silicon. The etching solution was an aqueous HF solution containing silver nitrate. SEM observation shows that well-aligned nanowire arrays perpendicular to the surface of the silicon substrate were produced. After sonication of silicon nanowire array, an individual silicon nanowire was confirmed by FESEM. Optical characteristics of SiNWs were measured by FT-IR spectroscopy. The surface of SiNWs are terminated with hydrogen.

• Journal of the Korean institute of surface engineering
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• v.57 no.3
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• pp.125-139
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• 2024

As the limits of semiconductor integration are approached, the challenges in semiconductor processes have intensified. And, for the production of semiconductors with dimensions under a few nanometers and to resolve the issues related to nanoscale device fabrication, research on atomic layer etching (ALE) technology has been conducted. The investigation related to ALE encompasses not only silicon and dielectric materials but also metallic materials. Particularly, there is an increasing need for ALE in next-generation metal materials that could replace copper in interconnect materials. This brief review will summarize the concept and methods of ALE and describe recent studies on potential next-generation metal replacements for copper, along with their ALE processes.