Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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A Study on Pattern Formation of Ultra Definition Display Panel Applying Phosphoric Acid

인산을 적용한 Ultra Definition 디스플레이 패널의 패턴 형성에 관한 연구

  • Kim, Min-Su (School of Energy.Materials.Chemical Engineering, Korea University of Education & Technology) ;
  • Cho, Ur Ryong (School of Energy.Materials.Chemical Engineering, Korea University of Education & Technology)
  • 김민수 (한국기술교육대학교 에너지.신소재.화학공학부) ;
  • 조을룡 (한국기술교육대학교 에너지.신소재.화학공학부)
  • Received : 2014.08.21
  • Accepted : 2014.09.22
  • Published : 2014.09.30
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Abstract

Phosphoric acid was used as etching agent instead of conventional peroxide - based chemicals for forming pattern of ultra definition display. Etchant was synthesized by mixing etching agent, oxidation agent, buffer solution, and additive into solvent, deionized water. Thicknesses of copper, main metal of ultra definition display, for etching, were 10,000 and $30,000{{\AA}}$. Etch stop of good low skew for proper pattern formation has been occurred at the content ratio of phosphoric acid 60 - 64%, nitric acid 4 - 5%, additive(potassium acetate) 1 - 3%. Buffer solution(acetic acid) decreased the metal contact angle $63.07^{\circ}$ to $42.49^{\circ}$ for benefiting pattern formation. Content variations on four components (phosphoric acid, nitric acid, acetic acid, potassium acetic acid) of the etchant with storage time were within 3 wt% after 24 hrs of etching work.

Keywords

References

  1. Denny A. Jones: "Principles and Prevention of Corrosion", 2rd ed. Prentice Hall, pp. 168-175, 1996.
  2. H. Otmacic, J. Telegdi, K. Papp, and E. Stupnis-Lisac,"Protective properties of an inhibitor layer formed on copper in neutral chloride solution", J. Appl. Electrochem., Vol. 34, pp. 545-550, 2004. https://doi.org/10.1023/B:JACH.0000021873.30314.eb
  3. E. M. Sherif and S.-M. Park, "2-amino-5-ethyl-1,3,4-thiazole as a corrosion inhibitor for copper in 3.0% NaCl solutions", Corr. Sci., Vol. 48, pp. 4065-4079, 2006. https://doi.org/10.1016/j.corsci.2006.03.011
  4. C. Whitman, M. M. Moshlehi, A. Paranjpe, L. Velo, and T. Omstesed, J. Vac. Sci. Technol., "Ultralarge scale integrated metallization and interconnects", Vol. A17, pp. 1893-1879, 1999.
  5. T. M. Karonge, and M. A. Ward: corrosion. "The basic and not basics of water corrosion processes altered by flow changes", Vol. 99, pp. 25-30, 1999.
  6. Serdar Aksu, Journal of the Electrochemical Society, "Electrochemical equilibria of copper in aqueous phosphoric acid solutions", Vol. 156, pp. 387-394, 2009. https://doi.org/10.1149/1.3215996
  7. S K Jeong, and J. B Chun. "Principle and application of scanning electron microscope", Korean Industrial Chemistry News, Vol. 12, No. 6, pp. 39-46, 2009.
  8. W. A. Badawy, and F. M. Al-Kharafi, Electrochimica Acta, "Corrosion and passivation behaviors of molybdenum in aqueous solutions of different pH", Vol. 44, pp. 693-702, 1998. https://doi.org/10.1016/S0013-4686(98)00180-7
  9. R. N. Parkins, Br. Corros. J., "Stress Corrosion Spectrum", Vol. 7, pp. 15-28, 1972. https://doi.org/10.1179/000705972798323350
  10. Roberto Vidal, and Alan C. West, J. "Electrochem". Soc., "Copper Electropolis hing in concentrated phosphoric acid. Experimental Findings", Vol. 142, pp. 2682-2689, 1995. https://doi.org/10.1149/1.2050074
  11. G. Kear, B. D. Barker, and F. C. Walsh, "Electro chemical corrosion of unallo yed copper in chloride media-a critical review", Corros. Sci., Vol. 46, pp. 109-135, 2004. https://doi.org/10.1016/S0010-938X(02)00257-3
  12. B. H. Seo and J. H. Seo, Current Applied Physics, "Effect of nitric acid on wet etching behavior of Cu/Mo for TFT application", Vol. 11, pp. 262-265, 2011. https://doi.org/10.1016/j.cap.2010.11.095