• Title/Summary/Keyword: Metal(Ag, Ni)

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Investigation of the Ni/Cu metallization for high-efficiency, low cost crystlline silicon solar cells (고효율, 저가화 실리콘태양전지를 위한 Ni/Cu/Ag 금속전극의 특성 연구)

  • Lee, Ji-Hun;Cho, Kyeng-Yeon;Lee, Soo-Hong
    • 한국태양에너지학회:학술대회논문집
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    • 2009.04a
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    • pp.235-240
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    • 2009
  • Crystlline silicon solar cells markets are increasing at rapid pace. now, crystlline silicon solar cells markets screen-printing solar cell is occupying. screen-printing solar cells manufacturing process are very quick, there is a strong point which is a low cost. but silicon and metal contact, uses Ag & Al pates. because of, high contact resistance, high series resistance and sintering inside process the electric conductivity decreases with 1/3. and In pastes ingredients uses Ag where $80{\sim}90%$ is metal of high cost. because of low cost solar cells descriptions is difficult. therefore BCSC(Buried Contact Solar Cell) is developed. and uses light-induced plating, ln-line galvanization developed equipments. Ni/Cu matel contact solar cells researches. in Germany Fraunhofer ISE. In order to manufacture high-efficiency solar cells, metal selections are important. metal materials get in metal resistance does small, to be electric conductivity does highly. efficiency must raise an increase with rise of the curve factor where the contact resistance of the silicon substrate and is caused by few with decrement of series resistance. Ni metal materials the price is cheap, Ti comes similar resistance. Cu and Ag has the electric conductivity which is similar. and Cu price is cheap. In this paper, Ni/Cu/Ag metal contact cell with screen printing manufactured, silicon metal contact comparison and analysis.

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Interfacial Structure of Inconel/$Si_3N_4$ Joint Using Ag-Cu-Ti Brazing Metal (Ag-Cu-Ti Brazing 금속을 이용한 Inconel/$Si_3N_4$ 접합의 계면구조)

  • 정창주;장복기;문종하;강경인
    • Journal of the Korean Ceramic Society
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    • v.33 no.12
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    • pp.1421-1425
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    • 1996
  • Sintered Si3N4 and Inconel composed of Ni(58-63%) Cr(21-25%) Al(1-17%) Mn(<1%) fe(balance) were pressurelessly joined by using Ag-Cu-Ti brazing filler metal at 950℃ and 1200℃ under N2 gas atmosphere of 1atm and their interfacial structures were investigated. In case that the reaction temperature was low as 950℃ its interfacial structure was "Inconel metal/Ti-rich phase layer/brazing filler metal layer/Si3N4 " Ti used as reactive metal existed in between inconel steel and brazing metal and moved to the interface of between brazing filler metal nd Si3N4 according as reaction temperature increased up to 1200℃. The interfacial structure of inconel steel-Si3N4 reacted at 1200℃ was ' inconel metal/Ni-rich phase layer containing of Fe. Cr and Si/Cu-rich phase layer containing of Mn and Si/Si3N4 " Cr Mn, Ni and Fe diffused to the interface of between brazing filler metal and Si3N4 and reacted with Si3N4 The most reactive components of ingredients of inconel metal were Cr and Mn. On the other hand Ti added as reactive components to Ag-Cu eutectic segregated into Ni-rich phase layer,.

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Adsorption and Separation of Ag(I) Using a Merrifield Resin Bound NTOE, NDOE in Aqueous Solution (수용액에서 NTOE, NDOE가 결합된 Merrifield 수지를 이용한 Ag(I)의 흡착 및 분리 특성)

  • Lee, Cheal-Gyu;Kim, Hae Joong
    • Analytical Science and Technology
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    • v.12 no.2
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    • pp.159-165
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    • 1999
  • The adsorption and separation behaviors of transition metal ions using a merrifield resin bound 1,12-diaza-3,4:9,10-dibenzo-5,8-dioxacyclopentadecane (NTOE) and 1,12,15-triaza-3,4:9,10-dibenzo-5,8-dioxacycloheptadecane(NDOE) were investigated in aqueous solution. The orders of adsorption degree(E) and distribution ratio(D) of transition metal ions were Cu(II)$t_R$) of metal ions were affected by adsorption degree(E) and distribution ratio(D). This results showed good separation efficiency of Ag(I) from mixed metal solution.

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Conductance of a Single Molecule Junction Formed with Ni, Au, and Ag Electrodes

  • Kim, Taekyeong
    • Journal of the Korean Chemical Society
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    • v.58 no.6
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    • pp.513-516
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    • 2014
  • We measure the conductance of a 4,4'-diaminobiphenyl formed with Ni electrodes using a scanning tunneling microscope-based break-junction technique. For comparison, we use Au or Ag electrodes to form a metal-molecular junction. For molecules that conduct through the highest occupied molecular orbital, junctions formed with Ni show similar conductance as Au and are more conductive than those formed with Ag, consistent with the higher work function for Ni or Au. Furthermore, we observe that the measured molecular junction length that is formed with the Ni or Au electrodes was shorter than that formed with the Ag electrodes. These observations are attributed to a larger gap distance of the Ni or Au electrodes compared to that of the Ag electrodes after the metal contact ruptures. Since our work allows us to measure the conductance of a molecule formed with various electrodes, it should be relevant to molecular electronics with versatile materials.

Intermetallic Formation between Sn-Ag based Solder Bump and Ni Pad in BGA Package (BGA 패키지에서 Sn-Ag계 솔더범프와 Ni pad 사이에 형성된 금속간화합물의 분석)

  • Yang, Seung-Taek;Chung, Yoon;Kim, Young-Ho
    • Journal of the Microelectronics and Packaging Society
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    • v.9 no.2
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    • pp.1-9
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    • 2002
  • The intermetallic formation between Sn-Ag-(Cu) solders and metal pads in a real BGA package was characterized using SEM, EDS, and XRD. The intermetallic phase formed in the interface between Sn-Ag-Cu and Au/Ni/Cu pad is likely to be ternary compound of $(Cu,Ni)_6Sn_5$ from EDS analysis High concentration of Cu was observed in the solder/Ni interface. XRD analysis confirmed that $\eta -Cu_6 Sn_5$ type was intermetallic phase formed in the interface between Cu containing solders and Ni substrates and $Ni_3$Sn_4$ intermetallic was formed in the Sn-Ag solder/Ni interface. The thickness of intermetallic phase increased with the reflow times and Cu concentration in solder.

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Study of contact resistance using the transmission line method (TLM) pattern for metal of electrode (Cr/Ag & Ni) (TLM pattern을 사용한 Cr/Ag 및 Ni 전극에 따른 접합 저항 연구)

  • Hwang, Min-Young;Koo, Ki-Mo;Koo, Sun-Woo;Oh, Gyu-Jin;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.349-349
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    • 2010
  • Great performance of many semiconductor devices requirs the use of low-resistance ohmic contact. Typically, transmission line method (TLM) patterns are used to measure the specific contact resistance between silicon and metal. In this works, we investigate contact resistance for metal dependent (Cr/Ag, Ni) using TLM pattern based on silicon-on-insulator (SOI) wafer. The electrode with Ni linearly increases contact resistance as the pattern distance increase from $15{\mu}m$ to $75{\mu}m$ in accumulation part, but non-linearly increase in inversion part. In additional, the electrode with Cr/Ag linearly increases contact resistance as the pattern distance increase from $15{\mu}m$ to $75{\mu}m$ in inversion part, but non-linearly increase in accumulation part.

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Adsorption and Separation Behaviors of Metal Ions Using a Poly-Dibenzo-18-Crown-6 in Aqueous Solution (수용액에서 Poly-dibenzo-18-crown-6를 이용한 금속이온들의 흡착 및 분리 특성)

  • Kim, Hae Joong;Chang, Jeong Ho;Shin, Young-Kook
    • Analytical Science and Technology
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    • v.11 no.4
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    • pp.248-253
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    • 1998
  • The adsorption and separation behaviors of alkali, alkaline earth and transition metal ions using a poly-dibenzo-18-crown-6 were investigated in aqueous solution. The adsorption degree(E) and distribution ratio(D) of alkali, alkaline earth metal ions were Li(I)$t_R$) of metal ions were affected by the adsorption degree(E) and distribution ratio(D). This results showed good separation efficiency of K(I), Sr(II), Ag(I) and Pb(II) from the mixed metal solution.

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Coupling effect of Cu(ENIG)/Sn-Ag-(Cu)/Cu(ENIG) sandwich solder joint (Cu(ENIG)/Sn-Ag-(Cu)/Cu(ENIG) sandwich solder 접합부의 Coupling 효과)

  • Yun Jeong-Won;Jeong Seung-Bu
    • Proceedings of the KWS Conference
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    • 2006.05a
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    • pp.33-35
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    • 2006
  • The interactions between Cu/Sn-Ag-(Cu) and Sn-Ag-(Cu)/Ni interfacial reactions were studied during isothermal aging at $150^{\circ}C$ for up to 1000h using Cu(ENIG)/Sn-3.5Ag-(0.7Cu)/Cu(ENIG) sandwich solder joints. A typical scallop-type Cu-Sn intermetallic compound (IMC) layer formed at the upper Sn-Ag/Cu interface after reflowing, whereas a $(Cu,Ni)_6Sn_5$ IMC layer was observed at the Sn-Ag/ENIG interface. The Cu in the $(Cu,Ni)_6Sn_5$ IMC layer formed on the Ni side was sourced from the dissolution of the opposite Cu metal pad or Cu-Sn IMC layer. When the dissolved Cu arrived at the interface of the Ni pad, the $(Cu,Ni)_6Sn_5$ IMC layer formed on the Ni interface, preventing the Ni pad from reacting with the solder. Although a long isothermal aging treatment was performed at $150^{\circ}C$, no Ni was detected in the Cu-Sn IMC layer formed on the Cu side. Compared to the single Sn-Ag/ENIG solder joint, the formation of the $(Cu,Ni)_6Sn_5$ IMC layer of the Cu/sn-Ag/ENIG sandwich joint effectively retarded the Ni consumption from the electroless Ni-P layer.

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Recovery of An, Ag, and Ni from PCB Wastes by CaF2-containing Slag (형우(螢右) 함유(含有) 슬래그 노이(盧理)를 통한 PCB 스크랩으로부터 Au, Ag, Ni의 회수(回收)에 관한 연구(班究))

  • Park, Joo-Hyun
    • Resources Recycling
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    • v.20 no.4
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    • pp.58-64
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    • 2011
  • Recovery of novel metals such as Au, Ag and Ni from wastes PCB was investigated by slag treatments. The CaO-$Al_2O_3$(-$SiO_2$) and CaO-$SiO_2$-$CaF_2$ slags were employed in the present study. The PCB/Cu ratio is recommended to be lower than unity. The use of CaO-$SiO_2$-$CaF_2$ slag provided the more higher yield of Au, Ag and Ni than the CaO-$Al_2O_3$(-$SiO_2$) slag did, which was mainly due to the lower melting point and the viscosity of $CaF_2$-containing slag. The terminal descending velocity of metal droplets in the slag phase increased with decreasing slag viscosity.

The Research of Ni/Cu Contact Using Light-induced Plating for Cryatalline Silicom Solar Cells (결정질 실리콘 태양전지에 적용될 Light-induced plating을 이용한 Ni/Cu 전극에 관한 연구)

  • Kim, Min-Jeong;Lee, Soo-Hong
    • 한국태양에너지학회:학술대회논문집
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    • 2009.11a
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    • pp.350-355
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    • 2009
  • The crysralline silicon solar cell where the solar cell market grows rapidly is occupying of about 85% or more high efficiency and low cost endeavors many crystalline solar cells. The fabricaion process of high efficiency crystalline silicon solar cells necessitate complicated fabrication processes and Ti/Pd/AG contact, This metal contacts have only been used in limited areas in spite of their good srability and low contact resistance because of expensive materials and process. Commercial solar cells with screen-printed solar cells formed by using Ag paste suffer from loe fill factor and high contact resistance and low aspect ratio. Ni and Cu metal contacts have been formed by using electroless plating and light-induced electro plating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on 0.2~0.6${\Omega}$ cm, $20{\times}20mm^2$, CZ(Czochralski) wafer.

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