• Title/Summary/Keyword: Memory coefficient

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A Study of Wavelet Image Coder for Minimizing Memory Usage (메모리 사용을 최소화하는 웨이블릿 영상 부호화기에 관한 연구)

  • 박성욱;박종욱
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.28 no.3C
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    • pp.286-295
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    • 2003
  • In this paper, the wavelet image coder, that can encode the image to various bit rate with minimum memory usage, is proposed. The proposed coder is used the 2D significant coefficient array(SCA) that has bit level informal on of the wavelet coefficients to reduce the memory requirement in coding process. The 2D SCA is two dimensional data structure that has bit level information of the wavelet coefficients. The proposed algorithm performs the coding of the significance coefficients and coding of bit level information of wavelet coefficients at a time by using the 2D SCA. Experimental results show a better or similar performance of the proposed method when compared with conventional embedded wavelet coding algorithm. Especially, the proposed algorithm performs stably without image distortion at various b it rates with minimum memory usage by using the 2D SCA.

Improving the Reliability by Straight Channel of As2Se3-based Resistive Random Access Memory (As2Se3 기반 Resistive Random Access Memory의 채널 직선화를 통한 신뢰성 향상)

  • Nam, Ki-Hyun;Kim, Chung-Hyeok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.6
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    • pp.327-331
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    • 2016
  • Resistive random access memory (ReRAM) of metallic conduction channel mechanism is based on the electrochemical control of metal in solid electrolyte thin film. Amorphous chalcogenide materials have the solid electrolyte characteristic and optical reactivity at the same time. The optical reactivity has been used to improve the memory switching characteristics of the amorphous $As_2Se_3$-based ReRAM. This study focuses on the formation of holographic lattices patterns in the amorphous $As_2Se_3$ thin film for straight conductive channel. The optical parameters of amorphous $As_2Se_3$ thin film which is a refractive index and extinction coefficient was taken by n&k thin film analyzer. He-Cd laser (wavelength: 325 nm) was selected based on these basic optical parameters. The straighten conduction channel was formed by holographic lithography method using He-Cd laser.$ Ag^+$ ions that photo-diffused periodically by holographic lithography method will be the role of straight channel patterns. The fabricated ReRAM operated more less voltage and indicated better reliability.

Affecting Variables on Subjective Memory Impairment in the Elderly with Benign Prostatic Hyperplasia (전립선비대증 노인의 주관적 기억장애 영향요인)

  • Kim, Jee-won;Choi, Soon-Ock
    • 한국노년학
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    • v.38 no.4
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    • pp.853-869
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    • 2018
  • This study aimed to investigate variables affecting subjective memory impairment in the elderly with benign prostatic hyperplasia. We used 179 survey data collected from the urology department of two metropolitan general hospitals. The subjects were patients with benign prostatic hyperplasia. T-test, one-way analysis of variance, and $Scheff{\acute{e}}^{\prime}s$ test were performed to identify differences among variables. Pearson's correlation-coefficient and stepwise multiple regression were used to identify variables that affect subjective memory impairment. This study revealed that lower urinary tract symptom and activities of daily living were statistically significant variables, with an explanatory power of 30.0%. The lower urinary tract symptom was due to the benign prostatic hyperplasia increasing the risk of subjective memory impairment. Treatment of the lower urinary tract symptom was delayed because as the elderly got older, they increasingly recognized benign prostatic hyperplasia as a reasonable symptom. Timely intervention and early screening are necessary to prevent lower urinary tract symptom. Finally, programs to reduce the incidence of lower urinary tract symptom and educate nurses to assess, evaluate, perform intervention for subjective memory impairment should be developed.

Static Analysis of Two Dimensional Curbed Beam Structure by Finite Element-Transfer Stiffness Coefficent Method (유한요소-전달강성계수법에 의한 2차원 곡선 보 구조물의 정적해석)

  • Choi, Myung-Soo
    • Journal of Power System Engineering
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    • v.21 no.6
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    • pp.40-45
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    • 2017
  • The objective of this study is the finite element-transfer stiffness coefficient method, which is the combination of the modeling technique of finite element method and the transfer technique of transfer stiffness coefficient method, is applied in the static analyses of two dimensional curved beam structures. To confirm the effectiveness of the applied method, two computational models are selected and analyzed by using finite element method, finite element-transfer stiffness coefficient method and exact solution. The computational results of the static analyses for two computational models using finite element-transfer stiffness coefficient method are equal to those using finite element method. When the element partition number of curved beam structure is increased, the computational results of the static analyses using both methods approach the exact solution. We confirmed that the finite element-transfer stiffness coefficient method is superior to finite element method when the number of the curved beam elements is increased from the viewpoints of the computational speed and the utility of computer memory.

Free Vibration Analysis of Lattice Type Structure by Transfer Stiffness Coefficient Method (전달 강성계수법에 의한 격자형 구조물의 자유 진동 해석)

  • 문덕홍;최명수;강화중
    • Journal of KSNVE
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    • v.8 no.2
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    • pp.361-368
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    • 1998
  • Complex and large lattice type structures are frequently used in design of bridge, tower, crane and aerospace structures. In general, in order to analyze these structures we have used the finite element method(FEM). This method is the most widely used and powerful tool for structural analysis. However, it is necessary to use a large amount of computer memory and computation time because the FEM resuires many degrees of freedom for solving dynamic problems exactly for these complex and large structures. For overcoming this problem, the authors developed the transfer stiffness coefficient method(TSCM). This method is based on the concept of the transfer of the nodal dynamic stiffness coefficient which is related to force and displacement vector at each node. In this paper, the authors formulate vibration analysis algorithm for a complex and large lattice type structure using the transfer of the nodal dynamic stiffness coefficient. And we confirmed the validity of TSCM through numerical computational and experimental results for a lattice type structure.

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AE Characteristics on the Damage Behavior of TiNi/A16061 Shape Memory Alloy Composites at High Temperature (TiNi/A16061 형상기억복합재료의 고온에서의 손상거동에 대한 AE 특성)

  • Lee, Jin-Kyung;Park, Young-Chul;Ku, Hoo-Taek
    • Journal of the Korean Society for Nondestructive Testing
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    • v.22 no.1
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    • pp.45-52
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    • 2002
  • It has been known that tensile residual stresses occurring by the thermal expansion coefficient mismatch between fiber and matrix is a cause of the weak strength of metal matrix composites(MMCs). In order to solve this problem, TiNi alloy fiber was used as a reinforced material in TiNi/A16001 shape memory alloy composite in this study. TiNi alloy fiber improves the tensile strength of the composite by causing compressive residual stress in matrix on the basis of its shape memory effect. Pre-strain was imposed to generate the compressive residual stresses inside the TiNi/A16001 shape memory alloy composites. AE technique was used to quantify the microscopic damage behavior of the composite at high temperature. The effect of applied pre-strains on the AE behavior was also evaluated.

Free Vibration Analysis of Lattice Type Structures by the Combination and Transfer of Stiffness Coefficient (강성계수의 조합 및 전달에 의한 격자형 구조물의 자유진동 해석)

  • 문덕홍;최명수;강화중;강현석
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 1997.04a
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    • pp.169-175
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    • 1997
  • Recently it is increased by degrees to produce complex and large lattice structures such as bridge, tower, crane, and space structures. In general, in order to analyse these structures we have used finite element method(FEM). In this method, however, it is necessary to use a large amount of computer memory and to take long computation time. For overcoming this problem, the Authors have developed the transfer dynamic stiffness coefficient method(TDSCM) which consists on the concept of the substructure synthesis method and transfer influence coefficient method. In this paper, the new free vibration analysis method for large type lattice structure is formulated by the TDSCM. And the results obtained by TDSCM are compared with those obtained by FEM, transfer matrix method and experiment. And it is confirmed for TDSCM to be the numerical high accuracy and high speed structure analysis method.

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Static Analysis of Frame Structures Using Transfer of Stiffness Coefficient (강성계수의 전달을 이용한 골조구조물의 정적해석)

  • 문덕홍;최명수;정하용
    • Proceedings of the Computational Structural Engineering Institute Conference
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    • 2001.10a
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    • pp.287-294
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    • 2001
  • In static analysis of a variety of structures, the matrix method of structural analysis is the most widely used and powerful analysis method. However, this method has drawback requiring high-performance computers with many memory units and fast processing units in the case of analyzing complex and large structures accurately. Therefore, it's very difficult to analyze these structures accurately in personal computers. For overcoming the drawback of the matrix method of structural analysis, authors suggest transfer stiffness coefficient method(TSCM). The TSCM is very suitable to a personal computer because the concept of the TSCM is based on the transfer of the stiffness coefficient for an analytical structure. In this paper, the static analysis algorithm for frame structures is formulated by the TSCM. We confirm the validity of the proposed method through the compare of computation results by the TSCM and the NASTRAN.

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A study on a CMOS analog cell-library design-A CMOS on-chip current reference circuit (CMOS 아날로그 셀 라이브레이 설계에 관한 연구-CMOS 온-칩 전류 레퍼런스 회로)

  • 김민규;이승훈;임신일
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.4
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    • pp.136-141
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    • 1996
  • In this paper, a new CMOS on-chip current reference circit for memory, operational amplifiers, comparators, and data converters is proposed. The reference current is almost independent of temeprature and power-supply variations. In the proposed circuit, the current component with a positive temeprature coefficient cancels that with a negative temperature coefficient each other. While conventional curretn and voltage reference circuits require BiCMOS or bipolar process, the presented circuit can be integrated on a single chip with other digiral and analog circits using a standard CMOS process and an extra mask is not needed. The prototype is fabricated employing th esamsung 1.0um p-well double-poly double-metal CMOS process and the chip area is 300um${\times}$135 um. The proposed reference current circuit shows the temperature coefficient of 380 ppm/.deg. C with the temperature changes form 30$^{\circ}C$ to 80$^{\circ}C$, and the output variation of $\pm$ 1.4% with the supply voltage changes from 4.5 V to 5.5 V.

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