• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.24 no.1
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• pp.31-36
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• 2024

Recently, mobile apps that utilize AI technologies are increasing. In the personal mobile environment, performance degradation may occur during the training phase of large AI workload due to limitations in memory capacity. In this paper, we extract memory reference traces of AI workloads and analyze their characteristics. From this analysis, we observe that AI workloads can cause frequent storage access due to weak temporal locality and irregular popularity bias during memory write operations, which can degrade the performance of mobile devices. Based on this observation, we discuss ways to efficiently manage memory write operations of AI workloads using persistent memory-based swap devices. Through simulation experiments, we show that the system architecture proposed in this paper can improve the I/O time of mobile systems by more than 80%.

• Journal of Magnetics
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• v.21 no.2
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• pp.159-163
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• 2016

Antiferromagnet (AFM)/ferromagnet (FM) bilayer structures are widely used in the magnetic devices of sensor and memory applications, as AFM materials can induce unidirectional anisotropy of the FM material via exchange coupling. The strength of the exchange coupling is known to be sensitive to quality of the interface of the AFM/FM bilayers. In this study, we utilize proton irradiation to modify the interface structures and investigate its effect on the magnetic properties of AFM/FM structures, including the exchange bias and magnetic thermoelectric effect. The magnetic properties of IrMn/CoFeB structures with various IrMn thicknesses are characterized after they are exposed to a proton beam of 3 MeV and $1{\sim}5{\times}10^{14}ions/cm^2$. We observe that the magnetic moment is gradually reduced as the amount of the dose is increased. On the other hand, the exchange bias field and thermoelectric voltage are not significantly affected by proton irradiation. This indicates that proton irradiation has more of an influence on the bulk property of the FM CoFeB layer and less of an effect on the IrMn/CoFeB interface.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.36T no.1
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• pp.13-18
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• 1999

The trap density by the stress bias in silicon oxides with different thicknesses has been investigated. The trap density by stress bias was shown to be composed of on time current and off time current. The on time trap density was composed of dc current. The off time trap density was caused by the tunneling charging and discharging of the trap in the interfaces. The on time trap density was used to estimate to the limitations on oxide thicknesses. The off time trap density was used to estimate the data retention in nonvolatile memory devices.

• 제어로봇시스템학회:학술대회논문집
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• 1990.10b
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• pp.1222-1227
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• 1990

The problem of identification of continuous systems is considered when both the discrete input and output measurements are contaminated by white noises. Using a predesigned digital low-pass filter, a discrete-time estimation model is constructed easily without direct approximations of system signal derivatives from sampled data. If the pass-band of the filter is designed so that it includes the main frequencies of both the system input and output signals in some range, the noise effects are sufficiently reduced, accurate estimates can be obtained by least squares(LS) algorithm in the presence of low measurement noises. Two classes of filters(infinite impulse response(IIR) filter and finite impulse response(FIR) filter) are employed. The former requires less computational burden and memory than the latter while the latter is suitable for the bias compensated least squares(BCLS) method, which compensates the bias of the LS estimate by the estimates of the input-output noise variances and thus yields unbiased estimates in the presence of high noises.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.153-156
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• 2005

원자층 증착 (atomic layer deposit : ALD) 방식으로 증착한 $Al_2O_3$의 건식식각 특성을 연구하였다. 전자 싸이클로트론 공진 (electron cyclotron resonance : ECR) 방식의 건식식각장치에서 source power, bias power, 압력 그리고 $Cl_2$ 가스를 변수로 하여 $Al_2O_3$의 식각속도와 Poly-Si 의 $Al_2O_3$에 대한 선택비를 측정하였다. bias power가 감소할수록 그리고 압력이 증가할수록 $Al_2O_3$의 식각속도는 감소하였고 Poly-Si 의 $Al_2O_3$에 대한 선택비는 증가하였다. 이 특성을 이용하여 TiN/$Al_2O_3$/Poly-Si 구조의 캐패시터와 Periphery 회로영역의 레지스터를 $Al_2O_3$를 식각 정지막으로 이용하여 구현하였다.

• Korean Journal of Culture and Social Issue
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• v.23 no.2
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• pp.271-293
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• 2017

Despite the benefits of social activity on happiness, humans still spend over one third of their time by themselves-sleeping. The effect of sleep quality on happiness as well as its underlying mechanism are examined in this study. Based on previous findings on the role of sleep in consolidation of memories, it was hypothesized that a good sleep would promote happiness by increasing the likelihood of recalling everyday episodes in a positively biased manner. In Study 1, regardless of one's demographic variables, social variables, and economic status, sleep quality was positively related to life satisfaction. To examine the causal direction of this effect, participants were asked to complete a survey twice with different time intervals. Controlling for baseline variables, sleep quality during previous two weeks (Study 2) or previous day (Study 3) significantly predicted the participants' life satisfaction. Moreover, this relationship was partially mediated by a positive memory bias (Study 3). This study opens interesting questions on a relatively unexamined nonsocial predictor of happiness, sleep quality.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.67-68
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• 2006

Floating gate non-volatile memory devices with Au nano-particles embedded in SiON or $SiO_2$ dielectrics were fabricated by digital sputtering method. The size and the density of Au are 4nm and $2{\times}10^{-12}cm^{-2}$, respectively. The floating gate memory of MOSFET with 5nm tunnel oxide and 45nm control oxide have been fabricated. This devices revealed a memory effect which due to proGrainming and erasing works perform by a gate bias stress repeatedly.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.95-96
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• 2009

A fully depleted capacitorless 1-transistor dynamic random access memory (FD 1T-DRAM) based on a sSOI strained-silicon-on-insulator) wafer was investigated. The fabricated device showed excellent electrical characteristics of transistor such as low leakage current, low subthreshold swing, large on/off current ratio, and high electron mobility. The FD sSOI 1T-DRAM can be operated as memory device by the floating body effect when the substrate bias of -15 V is applied, and the FD sSOI 1T-DRAM showed large sensing margin and several milli seconds data retention time.

• Electrical & Electronic Materials
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• v.9 no.8
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• pp.813-818
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• 1996

Amorphous As$_{10}$Ge$_{15}$ Te$_{75}$ device shows the memory switching characteristics under d.c. bias. In bulk material, a-As$_{10}$Ge$_{15}$ Te$_{75}$ switching threshold voltage (V$_{th}$) is very high (above 100 volts), but in the case of thin film, V$_{th}$ decreases to a few or ten a few volts. The characteristics of V$_{th}$ depends on the physical dimensions such as the thickness of thin film and the separation between d.c. electrodes, and the annealing conditions. The switching threshold voltage decreases exponentially with increasing annealing temperature and annealing time, but increases linearly with the thickness of thin film and exponentially with increasing the separation between d.c. electrodes. The desirable low switching threshold voltage, therefore, can be obtained by the stabilization through annealing and changing physical dimensions.imensions.sions.

• Transactions on Electrical and Electronic Materials
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• v.16 no.5
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• pp.290-292
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• 2015

We have reported about bipolar resistive switching effect on Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]:Graphene oxide composite films, which are sandwiched between aluminum and indium tin oxide electrodes. In this case, I-V sweep curve showed a hysteretic behavior, which varied according to the polarity of the applied voltage bias. The device exhibited excellent switching characteristics, with the ON/OFF ratio being approximately two orders in magnitude. The device had good endurance (10⁵ cycles without degradation) and long retention time (5 × 10³ s) at room temperature. The bistable switching behavior varied according to the trapping and de-trapping of charges on GO sites; the carrier transport was described using the space-charge-limited current (SCLC) model.