• Journal of Information Display
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• 제10권4호
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• pp.184-187
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• 2009

A liquid crystal device with switchable dynamic and memory modes was investigated and developed. The proposed device reveals the splay, $\pi$-twist, and bend states via selective switching among them. In the dynamic mode, the device is operated in the bend state, which exhibits a wide viewing-angle and a fast-response-time due to its self-compensated bend structure and flow-accelerated fast response time, respectively. In the memory mode, the permanent memory characteristics in the splay and $\pi$-twist sates are obtained, respectively. The switching mechanisms of the tristate device are also proposed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.600-603
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• 2009

The liquid crystal device with switchable dynamic mode and memory mode has been investigated and developed. The proposed device reveals splay, ${\pi}$ twist and bend states by selective switching among them. In the dynamic mode, this device is operated in the bend state which exhibits the wide view angle and fast response time properties due to the self-compensated bend structure and flow accelerated fast response time. In the memory mode, the permanent memory characteristics in the splay and ${\pi}$ twist sates are obtained, respectively. The switching mechanisms of the tristate device are also proposed.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권1호
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• pp.80-84
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• 2008

We systematically investigated the resistive switching properties of thin $TiO_2$ films on Pt/Ti/$SiO_2$/Si substrates that were embedded with a Co ultra thin layer. An in-situ sputtering technique was used to grow both films without breaking the chamber vacuum. A stable bipolar switching in the current-voltage curve was clearly observed in $TiO_2$ films with an embedded Co ultra thin layer, addressing the high and low resistive state under a bias voltage sweep. We propose that the underlying origin involved in the bipolar switching may be attributed to the interface redox reaction between the Co and $TiO_2$ layers. The improved reproducible switching properties of our novel structures under forward and reverse bias stresses demonstrated the possibility of future non-volatile memory elements in a simple capacitive-like structure.

• 한국신뢰성학회지:신뢰성응용연구
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• 제16권1호
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• pp.1-6
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• 2016

Purpose: Fluorine doped tin oxide (FTO) bottom electrode for $Ta_2O_5$ based RRAM was studied to apply for transparent resistive switching memory devices owing to its superior transparency, good conductivity and chemical stability. Methods: $ITO/Ta_2O_5/FTO$ (ITF) and $ITO/Ta_2O_5/Pt$ (ITP) devices were fabricated on glass and Si substrate, respectively. UV-visible (UV-VIS) spectroscopy was used to examine transparency of the ITF device and its band gap energy was determined by conventional Tauc plot. Electrical properties, such as electroforming and voltage-induced RS characteristics were measured and compared. Results: The device with an FTO bottom electrode showed good transparency (>80%), low forming voltage (~-2.5V), and reliable bipolar RS behavior. Whereas, the one with Pt electrode showed both bipolar and unipolar RS behaviors unstably with large forming voltage (~-6.5V). Conclusion: Transparent and conducting FTO can successfully realize a transparent RRAM device. It is concluded that FTO electrode may form a stable interface with $Ta_2O_5$ switching layer and plays as oxygen ion reservoir to supply oxygen vacancies, which eventually facilitates a stable operation of RRAM device.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.237.2-237.2
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• 2013

ReRAM cell, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of conductive filament in a solid electrolyte [1,2]. Especially, Chalcogenide-based ReRAM have become a promising candidate due to the simple structure, high density and low power operation than other types of ReRAM but the uniformity of switching parameter is undesirable. It is because diffusion of ions from anode to cathode in solid electrolyte layer is random [3]. That is to say, the formation of conductive filament is not go through the same paths in each switching cycle which is one of the major obstacles for performance improvement of ReRAM devices. Therefore, to control of nonuniform conductive filament formation is a key point to achieve a high performance ReRAM. In this paper, we demonstrated the enhanced repeatable bipolar resistive switching memory characteristics by spreading the Ag nanocrystals (Ag NCs) on amorphous GeSe layer compared to the conventional Ag/GeSe/Pt structure without Ag NCs. The Ag NCs and Ag top electrode act as a metal supply source of our devices. Excellent resistive switching memory characteristics were obtained and improvement of voltage distribution was achieved from the Al/Ag NCs/GeSe/Pt structure. At the same time, a stable DC endurance (>100 cycles) and an excellent data retention (>104 sec) properties was found from the Al/Ag NCs/GeSe/ Pt structured ReRAMs.

• 한국통신학회논문지
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• 제22권9호
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• pp.1867-1879
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• 1997

DREAM-S는 ATM 네트워크용 교환 시스템에서 응용 프로그램들의 교환기 운용 데이터에 대한 실시간 처리 요구를 지원하기 위한 분산 주기억장치 상주 데이터베이스 시스템(Main Memory Database Systems)이다. DREAM-S는 클라이언트-서버 구조를 가지면서 서버 프로세서에만 디스크가 연결되어 있으며, 대량의 데이터로부터 원하는 데이터를 신속히 검색하기 위하여 T- Tree 색인 구조를 제공한다. 본 논문에서논 DREAM-S에서 T- Tree 색인 구조에 대한 회복 기법를 제안한다. 주기억장치 상주 데이터베이스는 디스크 상주 데이터베이스 보다 뛰어난 성능을 제공하지만 시스템 고장 시(정전 등과 같은 오류) 주기억장치에 저장된 모든 데이터(릴레이션과 색인 구조)가 파손될 수 있다. 따라서 고장 후 파손된 주기억장치 데이터베이스를 신속히 정상 데이터베이스 상태로 회복하는 회복 기법이 필수적이다. 제안된 회복 기법에서는 T-Tree 색인 구조를 각 프로세서의 주기억장치에만 유지하도록 함으로서 ATM 교환기 시스템의 성능에서 병복 현상을 일으킬 수 있는 서버 프로세서의 디스크 출입 오버헤드를 줄인다. 또한, 시스템 고장 후 서버와 모든 클라이언트 시스템들이 병렬 처리 방식으로 각자의 T- Tree(들)를 회복하도룩 함으로서 클라이언트 개수가 많은 경우에도 신속한 회복이 가능하도록 하였다.

• 한국재료학회지
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• 제22권8호
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• pp.385-389
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• 2012

Significant improvements in the switching voltage distribution are required for the development of unipolar resistive memory devices using $MnO_x$ thin films. The $V_{set}$ of the as-grown $MnO_x$ film ranged from 1 to 6.2 V, whereas the $V_{set}$ of the oxygen-annealed film ranged from 2.3 to 3 V. An excess of oxygen in an $MnO_x$ film leads to an increase in $Mn^{4+}$ content at the $MnO_x$ film surface with a subsequent change in the $Mn^{4+}/Mn^{3+}$ ratio at the surface. This was attributed to the change in $Mn^{4+}/Mn^{3+}$ ratios at the $MnO_x$ surface and to grain growth. Oxygen annealing is a possible solution for improving the switching voltage distribution of $MnO_x$ thin films. In addition, crystalline $MnO_x$ can help stabilize the $V_{set}$ and $V_{reset}$ distribution in memory switching in a Ti/$MnO_x$/Pt structure. The improved uniformity was attributed not only to the change of the crystallinity but also to the redox reaction at the interface between Ti and $MnO_x$.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2001년도 ICCAS
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• pp.100.2-100
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• 2001

In this paper, we presented a switching-based control algorithm for improving the speed of response on temperature control of an extruder. We proposed a switching actuating value method in a temperature control of extruder and showed the effect of H$\infty$ control and PID control. Recently, the memoryless feedback control had proposed, which was not only the real time integration element, but also the memory elements. We examined the application of a switching actuating value method to a memoryless feedback, in a unit barrel temperature control of an extruder.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.298.1-298.1
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• 2016

Two-dimensional materials have been received significant interest after the discovery of graphene due to their fascinating electronic and optical properties for the application of novel devices. However, graphene lack of certain bandgap which is essential requirement to achieve high performance field-effect transistors. Analogous to graphene materials, molybdenum disulfide ($MoS_2$) as one of transition-metal dichalcogenides family presents considerable bandgap and exhibits promising physical, chemical, optical and mechanical properties. Here we studied nonvolatile memory based on $MoS_2$ which is grown by chemical vapor deposition (CVD) method. $MoS_2$ growth was taken on $1.5{\times}1.5cm^2$ $SiO_2$/Si-substrate. The samples were analyzed by Raman spectroscopy, atomic force microscopy and X-ray photoelectron spectroscopy. Current-voltage (I-V) characteristic was carried out HP4156A. The CVD-$MoS_2$ was analyzed as few layers and 2H-$MoS_2$ structure. From I-V measurement for two metal contacts on CVD-$MoS_2$ sample, we found typical resistive switching memory effect. The device structures and the origin of nonvolatile memory effect will be discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.210-213
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. Memory switching in chalcogenides is mostly a thermal process, which involves phase transformation from amorphous to crystalline state. The nonvolatile memory cells are composed of a simple sandwich (metal/chalcogenide/metal). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively.