• Journal of IKEEE
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• v.28 no.1
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• pp.110-115
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• 2024

This paper analyzed the V_th (Threshold Voltage) variations in 3D NAND Flash memory with tapered O/N/O (Oxide/Nitride/Oxide) structure and O/N/F (Oxide/Nitride/Ferroelectric) structure, where the blocking oxide is replaced by ferroelectric material. With a tapering angle of 0°, the O/N/F structure exhibits lower resistance compared to the O/N/O structure, resulting in reduced V_th variations in both the upper and lower regions of the WL (Word Line). Tapered 3D NAND Flash memory shows a decrease in channel area and an increase in channel resistance as it moves from the upper to the lower WL. Consequently, as the tapering angle increases, the V_th decreases in the upper WL and increases in the lower WL. The tapered O/N/F structure, influenced by V_fe proportional to the channel radius, leads to a greater reduction in V_th in the upper WL compared to the O/N/O structure. Additionally, the lower WL in the O/N/F structure experiences a greater increase in V_th compared to the O/N/O structure, resulting in larger V_th variations with increasing tapering angles.

• Proceedings of the KOSOMBE Conference
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• v.1989 no.05
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• pp.39-43
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• 1989

In this paper, hierachical representation method with a 1-to-4 and 1-to-8 data structure is used to reconstruct the three-dimensional scene from two-dimensional cross sections provided by computed tomography with small memory computer system. To reduce the internal memory use, 2-D section is represented by quadtree, and 3-D scene is represented by octree. Octree is constructed by recursively merging consecutive quadtrees. This method uses 7/200 less memory than pointer type structure with all the case, and less memory up to 60.3% than linear octree with experimental data.

• KIPS Transactions on Computer and Communication Systems
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• v.4 no.9
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• pp.327-336
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• 2015

Mobile game servers usually execute frequent dynamic memory allocation for generating the buffers that deal with clients requests. It causes to deteriorate the performance of game servers since it increases system workload and memory fragmentation. In this paper, we propose fixed-sized memory pool management method. Memory pool for the proposed method has a sequential memory structure based on circular linked list data structure. It solves memory fragmentation problem and saves time for searching the memory blocks which are required for memory allocation and deallocation. We showed the efficiency of the proposed method by evaluating the performance of dynamic memory allocation, through the proposed method and the memory pool management method based on boost open source library.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.11
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• pp.20-25
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• 2016

This study addresses a low complexity and lossless frame memory compression algorithm based on block-buffer structure for efficient high resolution video processing. Our study utilizes the block-based MHT (modified Hadamard transform) for spatial decorrelation and AGR (adaptive Golomb-Rice) coding as an entropy encoding stage to achieve lossless image compression with low complexity and efficient hardware implementation. The MHT contains only adders and 1-bit shift operators. As a result of AGR not requiring additional memory space and memory access operations, AGR is effective for low complexity development. Comprehensive experiments and computational complexity analysis demonstrate that the proposed algorithm accomplishes superior compression performance relative to existing methods, and can be applied to hardware devices without image quality degradation as well as negligible modification of the existing codec structure. Moreover, the proposed method does not require the memory access operation, and thus it can reduce costs for hardware implementation and can be useful for processing high resolution video over Full HD.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2011.06a
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• pp.789-790
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• 2011

• IEMEK Journal of Embedded Systems and Applications
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• v.13 no.3
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• pp.125-131
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• 2018

STT-RAM is attracting as a next generation Non-volatile memory for replacing cache memory with low leakage energy, high integration and memory access performance similar to SRAM. However, there is problem of write operations as the other Non_volatile memory. Hybrid cache memory using SRAM and STT-RAM is attracting attention as a cache memory structure with lowe power consumption. Despite this, reducing the leakage energy consumption by the STT-RAM is still lacking access to the Dynamic energy. In this paper, we proposed as energy management method such as a way-selection approach for hybrid L2 cache fo SRAM and STT-RAM and memory selection method of write/read operation. According to the simulation results, the proposed hybrid cache memory reduced the average energy consumption by 40% on SPEC CPU 2006, compared with SRAM cache memory.

• Journal of IKEEE
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• v.25 no.4
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• pp.770-773
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• 2021

In this paper, the retention characteristics of 3D NAND flash memory applied with tapering and ferroelectric (HfO₂) structure were analyzed after programming operation. Electrons trapped in nitride are affected by lateral charge migration over time. It was confirmed that more lateral charge migration occurred in the channel thickened by tapering of the trapped electrons. In addition, the Oxide-Nitride-Ferroelectric (ONF) structure has better lateral charge migration due to polarization, so the change in threshold voltage (V_th) is reduced compared to the Oxide-Nitride-Oxide (ONO) structure.

• Journal of the Korea Society of Computer and Information
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• v.4 no.1
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• pp.68-75
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• 1999

In this paper, we propose a Baysian method estimating system reliability which is more effective and precise than conventional methods using prior information. This technique estimates system reliabilities that an entire system and multiprocessing system is normally working in multiprocessor system and multiple port connected memory architecture. The reason is why internetwork with multiprocessor system is mainly connected as multiple bus structure, crossbar switching structure and multiport connected memory structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.69-70
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• 2006

A detailed Investigation of cell structure and electrical characteristic in chalcogenide-based phase-change random access memory(PRAM) devices is presented. We used compound of Ge-Sb-Te material for phase-change cell. A novel bottom electrode structure and manufacture are described. We used heat radiator structure for improved reset characteristic. A resistance change measurement is performed on the test chip. From the resistance change, we could observe faster reset characteristic.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.32B no.3
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• pp.31-37
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• 1995

In this paper, we propose a programmable 16 bit DSP architecture using FIFO instruction memory. With this DSP architecture, System structure, BUS structure, instruction set ant and an assembler for system test are developed. The characteristic of this structure is that it simply fetches instructions not from RAM but from FIFO using shift operations. Accordingly, System can be designed regardless of RAM access time. One cycle is enough to execute an instruction, if instruction pipeline is operated. Another merit of this structure is that we can obtain the same effect as instruction pipelining without constructing a complex pipelined controller by decreasing the pipeline number.