• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.120-120
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• 2011

Graphene is a carbon based material and it has great potential of being utilized in various fields such as electronics, optics, and mechanics. In order to develop graphene-based logic systems, graphene field-effect transistor (GFET) has been extensively explored. GFET requires supporting devices, such as volatile memory, to function in an embedded logic system. As far as we understand, graphene has not been studied for volatile memory application, although several graphene non-volatile memories (GNVMs) have been reported. However, we think that these GNVM are unable to serve the logic system properly due to the very slow program/read speed. In this study, a GVM based on the GFET structure and using an engineered graphene channel is proposed. By manipulating the deposition condition, charge traps are introduced to graphene channel, which store charges temporarily, so as to enable volatile data storage for GFET. The proposed GVM shows satisfying performance in fast program/erase (P/E) and read speed. Moreover, this GVM has good compatibility with GFET in device fabrication process. This GVM can be designed to be dynamic random access memory (DRAM) in serving the logic systems application. We demonstrated GVM with the structure of FET. By manipulating the graphene synthesis process, we could engineer the charge trap density of graphene layer. In the range that our measurement system can support, we achieved a high performance of GVM in refresh (>10 ${\mu}s$) and retention time (~100 s). Because of high speed, when compared with other graphene based memory devices, GVM proposed in this study can be a strong contender for future electrical system applications.

• Journal of the Korea Society of Computer and Information
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• v.20 no.6
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• pp.1-11
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• 2015

Recently, NAND flash memories are used for storage devices because of fast access speed and low-power. However, applications of FTL on low power computing devices lead to heavy workloads which result in a memory requirement and an implementation overhead. Consequently, studies of B+-Tree on embedded devices without the FTL have been proposed. The studies of B+-Tree are optimized for performance of inserting and updating records, considering to disadvantages of the NAND flash memory that it can not support in-place update. However, if a general garbage collection method is applied to the previous studies of B+-Tree, a performance of the B+-Tree is reduced, because it generates a rearrangement of the B+-Tree by changing of page positions on the NAND flash memory. Therefor, we propose a novel garbage collection method which can apply to the B+-Tree based on the NAND flash memory without the FTL. The proposed garbage collection method does not generate a rearrangement of the B+-Tree by using a block information table and a proxy block. We implemented the B+-Tree and ${\mu}$-Tree with the proposed garbage collection on physical devices with the NAND flash memory. In experiment results, the proposed garbage collection scheme compared to greedy algorithm garbage collection scheme increased the number of inserted keys by up to about 73% on B+-Tree and decreased elapsed time of garbage collection by up to about 39% on ${\mu}$-Tree.

• The Journal of the Korea Contents Association
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• v.18 no.1
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• pp.289-304
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• 2018

The fandom phenomenon of political emotion originated from ideological conflicts between the conservative and the progressive amplifies social conflicts in South Korea in interpreting and accepting films as culture media. The purpose of this paper is to examine why the structure of political consciousness in South Korea is fandomized, what is the acceptance of cinema at the center of the controversy of political ideology, and what is the desirable attitude of film reception. I conducted a discourse analysis that closely examined the debates and articles on the internet regarding ,(2013) and ,(2014) which were controversial in terms of conservatism and progressivism. As a result, First, while Korean society has not constituted a consensus on modern and contemporary history, it has easily led the acceptance of cinema to the controversy surrounding the political ideology. Second, the failure of constructing consensual memories of modern and contemporary history has made the conservative and the progressive not acknowledge the other's achievements. Third, film interpretation and meaning production are ultimately the roles of the audience, and on interpretation, diversity should be respected but conformity would be rejected. Film acceptance and interpretation should focus on rational awareness of social reality and would reflect on the social ideal objectively.

• The Journal of the Korea Contents Association
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• v.19 no.12
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• pp.362-375
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• 2019

Since Kim Dae-jung's administration, the Korean government has established policy for overseas Koreans to provide nationalism education to their descendants. While the policy is still in effect today, as to how the recipients of the support in the USA make meaning of the programs given much changes in the social climate in respect to Korean culture, has not been examined in-depth. Therefore, through in-depth interviews with Korean Americans, the current study examined how the recipients of the educational program perceive policy on education program towards Korean Americans and whether it has strengthened their nationalism or sentiment towards motherland. The study further examines the factors that influences their sentiments towards the motherland as identified by Korean Americans. The findings show that exposure to the culture and parents' teachings of the Korean values have helped them embrace Korean heritage. Moreover, findings revealed that their sense of Koreanness were due to positive memories from visits they had when they were young and changes in Korea's status in the global arena. Future direction of the policy and suggestion for specific programs for Korean Americans, as well as implications of the findings are discussed.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.10
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• pp.36-42
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• 2010

FFT(Fast Fourier Transform) processor is one of the key components in the implementation of OFDM systems for many wireless standards such as IEEE 802.22. To improve the performances of FFT processors, various studies have been carried out to reduce the complexities of multipliers, memory interface, control schemes and so on. While the number of FFT stages increases logarithmically $log_2N$) as the FFT point-size (N) increases, the number of required registers (or, memories) increases linearly. In large point-size FFT designs, the registers occupy more than 70% of the chip area. In this paper, to reduce the memory size of IFFT for OFDM transmitters, we propose a new IFFT design method based on a combined mapping of modulated data, pilot and null signals. The proposed method focuses on reducing the sizes of the registers in the first two stages of the IFFT architectures since the first two stages require 75% of the total registers. By simulations of 2048-point IFFT design for cognitive radio systems, it is shown that the proposed IFFT design method achieves more than 38.5% area reduction compared with previous IFFT designs.

• Journal of the Korean Society of Food Science and Nutrition
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• v.39 no.3
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• pp.376-382
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• 2010

It has been shown that BF-7 enhances short- and long-term memory and attention in normal person. BF-7 was addressed to clinical study for children if BF-7 is also effective to children, since accumulated verification of safety and effectiveness is needed for young ages, in special. We administered BF-7 and a placebo control to two different groups of children (7-12 years old, 9.78 on averages). Their memory enhancement was tested with Rey-Kim Memory Test for Children before and after the administration of BF-7 and a placebo, in a double blinded way. The results showed that long- and short-term memories were significantly improved by the administration of BF-7. Interestingly, the degree of memory preservation, the ability of memory application and awareness of complex thing were also significantly improved. These results indicate that BF-7 is a promising substance from natural resource improving learning and memory of children as well as cognitive function of adults

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.7A
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• pp.683-694
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• 2002

In this paper, a digital image compression codec using 2D DWT(Discrete Wavelet Transform) is designed using the FPGA technology for real time operation The implemented image compression codec using wavelet decomposition consists of a wavelet kernel part for wavelet filtering process, a quantizer/huffman coder for quantization and huffman encoding of wavelet coefficients, a memory controller for interface with external memories, a input interface to process image pixels from A/D converter, a output interface for reconstructing huffman codes, which has irregular bit size, into 32-bit data having regular size data, a memory-kernel buffer to arrage data for real time process, a PCI interface part, and some modules for setting timing between each modules. Since the memory mapping method which converts read process of column-direction into read process of the row-direction is used, the read process in the vertical-direction wavelet decomposition is very efficiently processed. Global operation of wavelet codec is synchronized with the field signal of A/D converter. The global hardware process pipeline operation as the unit of field and each field and each field operation is classified as decomposition levels of wavelet transform. The implemented hardware used FPGA hardware resource of 11119(45%) LAB and 28352(9％) ESB in FPGA device of APEX20KC EP20k600CB652-7 and mapped into one FPGA without additional external logic. Also it can process 33 frames(66 fields) per second, so real-time image compression is possible.

• Korean Journal of Biological Psychiatry
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• v.17 no.2
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• pp.79-85
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• 2010

Objectives : Trauma patients have attentional bias which enforces traumatic memories and causes cognitive errors. Understanding of such selective attention may explain many aspects of the posttraumatic stress disorder(PTSD) symptoms. Methods : We used the rapid serial visual presentation(RSVP) method to verify attentional blink in burn patients with PTSD. International affective picture system(IAPS) was used as stimuli and distracters. In the 'neutral test', patients have been presented series of pictures with human face picture as target stimuli. Each picture had 100ms interval. However the distance between target facial pictures was randomized and recognition of second facial picture accuracy was measured. In the 'stress test', the first target was stress picture which arouses patient emotions instead of the facial picture. Neutral and Stress tests were done with seven PTSD patients and 20 controls. In '85ms test' the interval was reduced to 85ms. The accuracy of recognition of second target facial picture was rated in all three tests. Eighty-five ms study was done with eighteen PTSD patients. Results : Attentional blinks were observed in 100-400ms of RSVP. PTSD patients showed increased recognition rate in the 'stress test' compared with the 'neutral test'. When presentation interval was decreased to 85 ms, PTSD patient showed decrease of attentional blink effect when target facial picture interval was 170ms. Conclusion : We found attentional blink effect could be affected by stress stimulus in burn patients. And attentional blink may be affected by stimulus interval and the character of stimulus. There may be some other specific mechanism related with selective attention in attentional blink especially with facial picture processing.

• Journal of Korean Society of Archives and Records Management
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• v.16 no.1
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• pp.121-150
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• 2016

This paper reports the evaluation of six open-source software systems for participatory digital archives. This is an effort to create a digital platform for the social memory of No Gun Ri, which was first recognized in 1999 as a civilian massacre. The process of how it was reported and investigated is critical to understanding this brutal incident. In addition, the course of its cultural recovery has witnessed the reconstruction of the No Gun Ri memory. Thus, it is important to embrace the social memory around the massacre in these archives. In consideration of a virtual space for memory, this study takes the form of participatory archives to provide a mechanism in which anyone can share their memories. As a way to find a digital archives system for No Gun Ri, this study analyzed open-source software based on identified functions and requirements for participatory digital archives. Knowing the details of digital systems, this study discussed how contents for social memory can be stored and used in a digital system.