• Journal of the Korean Ceramic Society
• /
• v.50 no.6
• /
• pp.423-428
• /
• 2013

Porous YSZ ceramics are fabricated using 3 mol% yittria-stabilized zirconia (3YSZ) and NiO with different particlesizes (0.6 and 7 ${\mu}m$). Nickel oxide (NiO) is added to the YSZ powder as a pore former with different amounts(40, 50, and 60 vol%) and at different sintering temperatures (1350 and $1400^{\circ}C$) are applied in order to evaluate the temperature effects on the pore and mechanical properties. Heat treatment is conducted after sintering at $700^{\circ}C$ in $H_2$ for the NiO reduction process; then, Ni is removed using a $HNO_3$ etchant solution. According to the NiO contentand sintering temperatures, 41-67% porous YSZ ceramic is obtained and the flexural strength increases, while the porosity decreases with an increasing sintering temperature. The optimum flexural strength ($136.5{\pm}13.4MPa$) and porosity (47%) for oxygen transport porous YSZ membrane can be obtained with 40 vol% of 7 ${\mu}m$ NiO particle at a sintering temperature of $1350^{\circ}C$.

• Journal of the Semiconductor & Display Technology
• /
• v.12 no.3
• /
• pp.19-22
• /
• 2013

The purpose of this study is to develop a system that can monitor the amounts of energy consumption during CVD and etching process for semiconductor manufacturing. Specifically, this system is designed to measure the $CO_2$ emission amounts quantitatively by measuring the flow rate of gas used and amount of power consumed during the processes. The processes of CVD equipment can be classified generally into processing step and cleaning step and all the two steps were monitored. In CVD and etcher equipments, various gases including Ar and $O_2$ are used, but Ar, $O_2$ and He were monitored with the use of the LCI data of Korea Environmental Industry & Technology Institute and carbon emission coefficients of EcoInvent. As a result, it was found that the carbon emission amounts of CVD equipment for Ar, $O_2$ and He were $0.030kgCO_2/min$, $4.580{\times}10^{-3}kgCO_2/min$ and $6.817{\times}10^{-4}kgCO_2/min$, respectively and those of etcher equipment for Ar and $O_2$ are $5.111{\times}10^{-3}kgCO_2/min$ and $7.172kgCO_2/min$, respectively.

• Journal of the Korean Vacuum Society
• /
• v.7 no.2
• /
• pp.88-93
• /
• 1998

The fabrication process and emission characteristics of gated silicon field emitter arrays(FEAs) using chemical-mechanical-polishing (CMP) method are described. Novel fabrication techniques consisting of two-step dry etching with oxidation of silicon and CMP processes were developed for the formation of sharp tips and clear-cut edged gate electrodes, respectively. The gate height and aperture could be easily controlled by varying the polishing time and pressure in the CMP process. We obtained silicon FEAs having self-aligned and clear-cut edged gate electrode opening by eliminating the dishing problem during the CMP process with an oxide mask layer. The tip height of the finally fabricated FEAs was about 1.1 $\mu$m and the end radius of the tips was smaller than 100 $\AA$. The emission current meaured from the fabricated 2809 tips array was about 31 $\mu$A at a gate voltage of 80 V.

• Korean Journal of Materials Research
• /
• v.16 no.12
• /
• pp.731-738
• /
• 2006

It is seriously considered using Al CMP (chemical mechanical planarization) process for the next generation 45 nm Al wiring process. Al CMP is known that it has a possibility of reducing process time and steps comparing with conventional RIE (reactive ion etching) method. Also, it is more cost effective than Cu CMP and better electrical conductivity than W via process. In this study, we investigated 4 different kinds of slurries based on abrasives for reducing scratches which contributed to make defects in Al CMP. The abrasives used in this experiment were alumina, fumed silica, alkaline colloidal silica, and acidic colloidal silica. Al CMP process was conducted as functions of abrasive contents, $H_3PO_4$ contents and pressures to find out the optimized parameters and conditions. Al removal rates were slowed over 2 wt% of slurry contents in all types of slurries. The removal rates of alumina and fumed silica slurries were increased by phosphoric acid but acidic colloidal slurry was slightly increased at 2 vol% and soon decreased. The excessive addition of phosphoric acid affected the particle size distributions and increased scratches. Polishing pressure increased not only the removal rate but also the surface scratches. Acidic colloidal silica slurry showed the highest removal rate and the lowest roughness values among the 4 different slurry types.

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2007.05a
• /
• pp.417-420
• /
• 2007

Micro parts are usually used of producing by micro-electro-mechanical systems(MEMS). In this paper, we present some fundamental results concerning on the MEMS, extrusion condition on the micro forming characteristics and new micro forward extrusion machine has been developed. In the first step, we manufactured micro dies in two kinds of sections. One is a circle section, another is a cross section. The process for fabricating micro dies combines a deep UV-lithography, anisotropic etching techniques and metal electroplating with bulk silicon based on Ni with a thickness of $50{\mu}m$. The outer diameter of Ni-micro dies is 3mm and the diameter of extrusion section is $270{\mu}m$ for a cross section, $500{\mu}m$ for a circle section. The low linear density polyethylene(LLEPD) in the shape of a pellet has been used of micro extrusion. The billet was placed in a container manufactured by electric discharge machining and extruded through the micro die by a piezoelectric actuator. The micro extrusion has succeeded in a forming such micro parts as micro bars, micro cross shafts.

• Proceedings of the KSME Conference
• /
• 2007.05b
• /
• pp.1894-1899
• /
• 2007

This paper presents the thermal characteristics for micro heat exchanger with different micro-channel shapes. The shapes of micro-channel has been manufactured sheet metal by chemical etching for the I shape of straight channel and V and W shapes of chevron feature and fabricated micro plated heat exchangers using the vacuum brazing of bonding technology. The experimental study has been performed on heat transfer and pressure drop characteristics with various Reynolds number for water to water at the counter flows. The average heat transfer rate of V and W shapes has been showed about 1.5${\sim}$1.6 times large than those of I shape. For the comparison of Nusselt number, it is known that the convective heat transfer of V and W shapes represent more effect than I shape. The pressure drops of V and W shapes are about 1.2${\sim}$1.7 times lager than those of I shape.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.382-382
• /
• 2012

Nanostructures have a larger surface/volume ratio as well as unique mechanical, physical, chemical properties compared to existing bulk materials. Materials for biomedical implants require a good biocompatibility to provide a rapid recovery following surgical procedure and a stabilization of the region where the implants have been inserted. The biocompatibility is evaluated by the degree of the interaction between the implant materials and the cells around the implants. Recent researches on this topic focus on utilizing the characteristics of the nanostructures to improve the biocompatibility. Several studies suggest that the degree of the interaction is varied by the relative size of the nanostructures and cells, and the morphology of the surface of the implant [1, 2]. In this paper, we fabricate the nanowires on the Ti substrate for better biocompatible implants and other biomedical applications such as artificial internal organ, tissue engineered biomaterials, or implantable nano-medical devices. Nanowires are fabricated with two methods: first, nanowire arrays are patterned on the surface using e-beam lithography. Then, the nanowires are further defined with deep reactive ion etching (RIE). The other method is self-assembly based on vapor-liquid-solid (VLS) mechanism using Sn as metal-catalyst. Sn nanoparticle solutions are used in various concentrations to fabricate the nanowires with different pitches. Fabricated nanowries are characterized using scanning electron microscopy (SEM), x-ray diffraction (XRD), and high resolution transmission electron microscopy (TEM). Tthe biocompatibility of the nanowires will further be investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.424-424
• /
• 2009

그라핀은 밴드갭이 없어서 세미메탈의 성질을 띠므로 초고속 RF 소자에는 응용이 가능하지만, 현재 사용되는 반도체 칩에 사용하기가 불가능하다. 그러나 그라핀을 매우 좁은 리본 형태로 만들 경우 밴드갭이 생기고 이에 따라 반도체특성을 뛰게 된다. 이러한 특성은 시뮬레이션을 통해서만 이해되다가 2007년 P. Kim이 그라핀 나노리본의 밴드캡이 리본의 폭이 좁아짐에 따라 증가함을 실험적으로 최초로 발표하였다. 하지만 그라핀을 나노리본형태로 식각 방법에 대해서는 정확히 연구되지 않았다. 따라서 본 연구에서는 $O_2$ plasma ashing 방법을 이용하여 그라핀을 식각하는 방법에 대해 연구하였다. 먼저 Si기판을 initial cleaning 한 후, highly-oriented pyrolytic graphite(HOPG)를 이용하여 기존의 mechanical exfoliation 방식을 통해 그라핀을 형성하였다. Photo-lithography 방법을 통하여 패터닝한 후, 그라핀을 식각하기 위하여 Reactive Ion Etcher (RIE) system을 이용한 $O_2$ plasma ashing을 50 W에서 1 분간 실시하였다. 다시 image reverse photo-lithography 과정과 E-beam evaporator system를 통해서 Al 전극을 형성하여 graphene-FET를 제작하였고, 광학 현미경과 AFM (Atomic force microscope)을 통해 두께를 확인하였다. 본 연구를 통하여 $O_2$ plasma ashing을 이용하여 쉽게 그라 E을 식각할 수 있음을 확인 하였으며, 제작된 소자의 전기적 특성에 대해서 현재 실험중에 있다.

• Journal of the Korean Ceramic Society
• /
• v.40 no.4
• /
• pp.385-392
• /
• 2003

Sol-gel preparation technique using a chemical reaction of metal alkoxides has been widely used for the fabrication of various materials including ceramics. However, its mechanism has been studied till now because a number of chemical ways are possible from various alkoxides and additives. In this study, the mechanism of hydrolysis, condensation, and polymerization of alkoxides were investigated from the fabrication of lead-zirconate-titanate (PbZr$\_$x/Ti$\_$l-x/O$_3$; PZT) thin film that is used as various micro-actuator, transducer, and sensor because of its high electro-mechanical coupling factors and thermal stability. Furthermore, the fabrication process and characteristics of self-patternable PZT film using photosensitive stabilizer were studied in order to resolve the problem of physical damage and properties degradation during dry etching for device fabrication. Using an optimum condition to prepare the self-patternable PZT film, more than 5000 ${\AA}$ thick self-patternable PZT film could be fabricated by three times coating. The PZT film showed 28.4 ${\mu}$c/cm$^2$ of remnant polarization (Pr) and 37.0 kV/cm of coercive field (E$\_$c/).

• Applied Microscopy
• /
• v.47 no.1
• /
• pp.36-42
• /
• 2017

Field electron emission measurements were performed on dielectric-coated tungsten emitters, with apex radii in the nanometer and micrometer range, which were prepared by electrochemical etching in NaOH solution. Measurements were performed in a field electron microscopy (FEM) with a base pressure <$10^{-6}$ Pascal ($10^{-8}$ mbar). Four different types of dielectric were used, namely: (1) Clark Electromedical Instruments epoxylite resin, (2) Epidian 6 produced by Ciech Sarzyna S. A., (3) a Radionox solution of colloidal graphite; and (4) Molyslip 2001 E compound ($MoS_2$ and MoS). Current-voltage measurements and FEM images were used to investigate the characteristics of these composite emitters, and to assess how the different types of dielectric coating affect the suitability of the composite emitter as a potential electron source.