• Design & Manufacturing
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• 제12권1호
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• pp.47-51
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• 2018

As the IT industry rapidly progresses, the functions of electronic devices and display devices are integrated with high density, and the model is changed in a short period of time. To implement the integration technology, a uniform micro-pattern implementation technique to drive and control the product is required. The most important technology for the micro pattern generation is the exposure processing technology. Failure to implement the basic pattern in this process cannot satisfy the demands in the manufacturing field. In addition, the conventional exposure method of the mask method cannot cope with the small-scale production of various types of products, and it is not possible to implement a micro-pattern, so an alternative technology must be secured. In this study, the technology to implement the required micro-pattern in semiconductor processing is presented through the photolithography process and plasma etching.

• 한국재료학회지
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• 제2권5호
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• pp.383-386
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• 1992

(100) 실리콘 기판에 대해 깊온 비등방성 식각을 행한 경우 식각면의 가장자리에 존재하는 욜균일성은 식각 계면의 격자결함과 기계적 응력에 의한 것임을 판찰할 수 있었다.

• 한국정밀공학회지
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• 제31권1호
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• pp.75-81
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• 2014

Laser beam machining has been known as efficient for glass micromachining. It is usually used the ultra-short pulsed laser which is time-consuming and uneconomic process. In order to use economic and powerful long pulsed laser, indirect processing called laser-induced backside wet etching (LIBWE) is good alternative method. In this paper, micromachining of glass using Nd:YAG laser with nanosecond pulsed beam has been attempted. In order to improve shape accuracy, combined processing with magnetic stirrer has been widely used. Magnetic stirrer acts to circulate the solution and remove the bubble but it is not suitable for deep hole machining. To get better effect, ultrasonic vibration was applied for improving shape accuracy.

• 한국정밀공학회지
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• 제16권2호통권95호
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• pp.60-67
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• 1999

Micro-fabrication techniques such as lithography and LIGA processes usually require large investment and are suitable for mass production. Therefore, there is a need for a new micro-fabrication technique that is flexible and more cost effective. In this paper a novel, economical and flexible method of producing micro-pattern on silicon wafer is presented. This method relies on selective removal of mask by mechanical cutting. Then micro-pattern is produced by chemical etching. V-shaped grooved of about 3 ${\mu}m$ wide and 2 ${\mu}m$ deep has been made on ${SiO_2}m$ coated silicon wafer with this method. This method may be utilized for making microstructures in MEMS application at low cost.

• 한국기계가공학회지
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• 제12권5호
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• pp.30-35
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• 2013

In order to increase cell efficiency in crystalline silicon solar cell, reduction of light reflection is one of the essential problem. Until now silicon wafer was textured by wet etching process which has random patterns along crystal orientation. In this study, high aspect ratio patterns are manufactured by nano imprint process and reflectance could be minimized under 1%. After that, screen printed solar cell was fabricated on the textured wafer and I-V characteristics was measured by solar simulator. Consequently cell efficiency of solar cell fabricated using the wafer textured by nano imprint process increased 1.15% than reference solar cell textured by wet etching. Internal quantum efficiency was increased in the range of IR wave length but decreased in the UV wavelength. In spite of improved result, optimization between nano imprinted pattern and solar cell process should be followed.

• 대한기계학회논문집A
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• 제32권5호
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• pp.424-429
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• 2008

Surface wettability in terms of the size of the micro nano structures has been examined. To evaluate the influence of the nano structures on the contact angles, we fabricated two different kinds of structures: squarepillar-type microstructure with nano-protrusions and without nano-protrusions. Microstructure and nanostructure arrays were fabricated by deep reactive ion etching (DRIE) and reactive ion etching (RIE) processes, respectively. And plasma polymerized fluorocarbon (PPFC) was finally deposited onto the fabricated structures. Average value of the measured contact angles from microstructures with nanoprotrusions was $6.37^{\circ}$ higher than that from microstructures without nano-protrusions. This result indicates that the nano-protrusions give a crucial effect to increase the contact angle.

• 한국표면공학회지
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• 제28권3호
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• pp.174-181
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• 1995

Multilayered silicon cantilever beams as interconnection systems for bare chip burn-in socket applications have been designed, fabricated and characterized. Fabrication processes of the beam are employing standard semiconductor processes such as thin film processes and epitaxial layer growth and silicon wet etching techniques. We investigated silicon etch rate in 1-3-10 etchant as functions of doping concentration, surface mechanical stress and crystal defects. The experimental results indicate that silicon etch rate in 1-3-10 etchant is strong functions of doping concentration and crystal defect density rather than surface mechanical stress. We suggested the new fabrication processes of multilayered silicon cantilever beams.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 추계학술대회 논문집
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• pp.502-505
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• 2005

To overcome some of the limitations in the conventional photolithography technique, MC-SPL which has advantages such as flexibility and high speed was developed in the past. To make a fine pattern using MC-SPL, there are many variables to control, for example, applied load, scribing speed, chemical etching condition, and etc. In this work, the effect of contact load on the width of the pattern was investigated. The load not only influences the width of the pattern but it also affects the wear of the probe tip. It was found that it is beneficial to load the tip in two stages. Futhermore, the experimental results showed that the pattern width was more sensitive to the initial contact force.

• 한국표면공학회지
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• 제33권4호
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• pp.266-272
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• 2000

Sputtered $MoS_2$ thin films provide lubrication and wear improvements for vacuum and space applications. In this study, deposition of $MoS_2$ thin films by R.F. magnetron sputtering was studied with regard to the micro-structural change of $MoS_2$ film and mechanical properties. The coating parameters such as the working pressure, the RF power, the substrate temperature, the etching time were varied to determine how these parameters affected the film morphology and mechanical properties of deposited films. The best wear properties and critical load were observed with the film deposited at $70^{\circ}C$, 1.0$\times$$10^{ -3}$ Torr, 170W and 1 hour deposition time. The critical load increased with the increase of sputter etching time.

• 센서학회지
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• 제7권6호
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• pp.426-431
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• 1998

본 논문에서는 THAH/IPA/pyrazine 용액에서의 전기화학적 식각정지특성을 기술한다. THAH/IPA/pyrazine 용액에서의 n-형과 p-형의 Si에 대한 I-V 곡선이 얻어졌다. p-형 Si에 대한 OCP(개방회로전압)과 PP(보호막생성 전압)은 각각 -1.2 V와 0.1 V이고, n-형에 대해서는 -1.3 V와 -0.2 V로 각각 나타났다. p-형과 n-형 Si 모두 PP점보다 양의 전압에서 식각율이 급속히 감소하였다. 또한 THAH/IPA/pyrazine 용액에서의 식각정지특성을 관찰하였다. pn 접합부에서의 정확한 식각정지에 의해서 epi. 층의 두께에 상응하는 Si 다이어프램을 제작할 수 있었다. 최적 이방성 식각조건인 TMAH 25 wt.%/IPA 17 vol.%/pyrazine 0.1g/100ml에서 식각률이 가장 높기 때문에 식각소요시간이 크게 감소하였다.