• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05a
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• pp.206-209
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• 2002

본 논문에서는 폴리실리콘의 재결정화 공정에서 발생하기 쉬운 폴리실리콘의 엉김현상, 슬립, 부분적인 실리콘 기판의 녹음현상 등을 방지하기 위한 방법을 제시한다. 그리고 재결정화 된 박막의 질을 향상시키기 위한 폴리실리콘과 보호 산화막(capping oxide)의 두께 변화에 따른 실험 결과를 살펴본다. 폴리실리콘의 엉김현상은 매몰 산화막(buried oxide)과 액체 상태의 실리콘 사이의 wetting angle과 관계되는데, 이를-방지하기 위해서는 재결정화할 폴리실리콘과 산화막의 계면에 질소를 주입시켜주면 되는데, 이는 재결정화할 시료를 암모니아 가스 분위기에서 열처리를 통하여 해결할 수 있다. 그러고 실러콘 기판의 국부적 녹음 현상 및 슬립은 실리콘 기판의 윗면을 mechanical damage에 의해서 약 $20{\mu}m$ 정도의 거칠기를 가지도록 하면 이러한 현상을 방지할 수 있다. 그러고 폴리실리콘이 재결정활 될 때 부피의 변화가 발생하며, 이로 인하여 재결정화된 박막의 두께는 위치에 따라 변화한다. 재결정화된 박막 두께의 균일도를 유지하기 위해서는 재결정화할 폴리실리콘 두께의 3배 이상이 되는 보호 산화막을 사용하였을 때 원하는 균일도를 얻을 수 있었다.

• Journal of Soil and Groundwater Environment
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• v.27 no.1
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• pp.1-16
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• 2022

In-situ activated carbon (AC) amendment is a promising remediation technique for the treatment of sediment impacted by hydrophobic organic contaminants (HOCs). Since its first proposal in the early 2000s, the remediation technique has quickly gained acceptance as a feasible alternative among the scientific and engineering communities in the United States and northern Europe. This review paper aims to provide an overview on in-situ AC amendment for the treatment of HOC-impacted sediment with a major focus on its working principles. We began with an introduction on the practical and scientific background that led to the proposal of this remediation technique. Then, we described how the remediation technique works in a mechanistic sense, along with discussion on two modes of implementation, mechanical mixing and thin-layer capping, that are distinct from each other. We also discussed key considerations involved in establishing a remedial goal and performing post-implementation monitoring when this technique is field-applied. We concluded with future works necessary to adopt and further develop this innovative sediment remediation technique to ongoing and future sediment contamination concerns in Korea.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.4
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• pp.25-31
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• 2012

In the synthesis of nanoparticles (NPs) via wet chemical reduction using tin(II) acetate precursor, the effects of green reducing agents (sugar) and a capping agent (gelatin) on the formation of NPs were analyzed as functions of synthesis conditions and time. When glucose was used as the reducing agent, it was observed that irregular chainlike shapes, aggregates of NPs, were formed during the synthesis at $70-110^{\circ}C$. The NPs were determined as $SnO_2$ from the fast Fourier transform (FFT) pattern. In the synthesis at $110^{\circ}C$ by using sucrose, fine spherical NPs of ~10 nm in diameter were formed after the synthesis time of 3 h. As the time increased to 9 h, the chainlike NP aggregates besides irregularly aggregated spherical NPs were also formed locally. However, the chainlike NP aggregates were only observed when the synthesis was conducted at $130^{\circ}C$. The spherical NPs and chainlike NP aggregates were analyzed to be pure Sn and $SnO_2$, respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.25.1-25.1
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• 2011

Over the past few decades, metallic nanoparticles (NPs) have been of great interest due to their unique mesoscopic properties which distinguish them from those of bulk metals; such as lowered melting points, greater versatility that allows for more ease of processability, and tunable optical and mechanical properties. Due to these unique properties, potential opportunities are seen for applications that incorporate nanomaterials into optical and electronic devices. Specifically, the development of metallic NPs has gained significant interest within the electronics field and technological community as a whole. In this study, gold (Au) pads for surface finish in electronic package were developed by inkjet printing of Au NPs. The microstructures of inkjet-printed Au film were investigated by various thermal treatment conditions. The film showed the grain growth as well as bonding between NPs. The film became denser with pore elimination when NPs were sintered under gas flows of $N_2$-bubbled through formic acid ($FA/N_2$) and $N_2$, which resulted in improvement of electrical conductance. The resistivity of film was 4.79 ${\mu}{\Omega}$-cm, about twice of bulk value. From organic anlayses of FTIR, Raman spectroscopy, and TGA, the amount of organic residue in the film was 0.43% which meant considerable removal of the solvent or organic capping molecules. The solder ball shear test was adopted for solderability and shear strength value was 820 gf (1 gf=9.81 mN) on average. This shear strength is good enough to substitute the inkjet-printed Au nanoparticulate film for electroplating in electronic package.

• Korean Journal of Materials Research
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• v.17 no.9
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• pp.453-457
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• 2007

Interest in use of ink-jet printing for pattern-on-demand fabrication of metal interconnects without complicated and wasteful etching process has been on rapid increase. However, ink-jet printing is a wet process and needs an additional thermal treatment such as an annealing process. Since a metal ink is a suspension containing metal nanoparticles and organic capping molecules to prevent aggregation of them, the microstructure of an ink-jet printed metal interconnect 'as dried' can be characterized as a stack of loosely packed nanoparticles. Therefore, during being treated thermally, an inkjet-printed interconnect is likely to evolve a characteristic microstructure, different from that of the conventionally vacuum-deposited metal films. Microstructure characteristics can significantly affect the corresponding electrical and mechanical properties. The characteristics of change in microstructure and electrical resistivity of inkjet-printed silver (Ag) films when annealed isothermally at a temperature between 170 and $240^{\circ}C$ were analyzed. The change in electrical resistivity was described using the first-order exponential decay kinetics. The corresponding activation energy of 0.44 eV was explained in terms of a thermally-activated mechanism, i.e., migration of point defects such as vacancy-oxygen pairs, rather than microstructure evolution such as grain growth or change in porosity.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.1
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• pp.39-46
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• 2021

The quantitative measurement of interfacial adhesion energy (Gc) of multilayer thin films for Cu interconnects was investigated using a double cantilever beam (DCB) and 4-point bending (4-PB) test. In the case of a sample with Ta diffusion barrier applied, all Gc values measured by the DCB and 4-PB tests were higher than 5 J/㎡, which is the minimum criterion for Cu/low-k integration without delamination. However, in the case of the Ta/Cu sample, measured Gc value of the DCB test was lower than 5 J/㎡. All Gc values measured by the 4-PB test were higher than those of the DCB test. Measured Gc values increase with increasing phase angle, that is, 4-PB test higher than DCB test due to increasing plastic energy dissipation and roughness-related shielding effects, which matches well interfacial fracture mechanics theory. As a result of the 4-PB test, Ta/Cu and Cu/Ta interfaces measured Gc values were higher than 5 J/㎡, suggesting that Ta is considered to be applicable as a diffusion barrier and a capping layer for Cu interconnects. The 4-PB test method is recommended for quantitative adhesion energy measurement of the Cu interconnect interface because the thermal stress due to the difference in coefficient of thermal expansion and the delamination due to chemical mechanical polishing have a large effect of the mixing mode including shear stress.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.45-50
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• 2014

Effects of wet chemical treatment and thermal cycle conditions on the quantitative interfacial adhesion energy of $Cu/SiN_x$ thin film interfaces were evaluated by 4-point bending test method. The test samples were cleaned by chemical treatment after Cu chemical-mechanical polishing (CMP). The thermal cycle test between Cu and $SiN_x$ capping layer was experimented at the temperature, -45 to $175^{\circ}C$ for 250 cycles. The measured interfacial adhesion energy increased from 10.57 to $14.87J/m^2$ after surface chemical treatment. After 250 thermal cycles, the interfacial adhesion energy decreased to $5.64J/m^2$ and $7.34J/m^2$ for without chemical treatment and with chemical treatment, respectively. The delaminated interfaces were confirmed as $Cu/SiN_x$ interface by using the scanning electron microscope and energy dispersive spectroscopy. From X-ray photoelectron spectroscopy analysis results, the relative Cu oxide amounts between $SiN_x$ and Cu decreased by chemical treatment and increased after thermal cycle. The thermal stress due to the mismatch of thermal expansion coefficient during thermal cycle seemed to weaken the $Cu/SiN_x$ interface adhesion, which led to increased CuO amounts at Cu film surface.