• Journal of Electrical Engineering and information Science
• /
• v.2 no.6
• /
• pp.197-201
• /
• 1997

To realize 10-Gbit/s optical transmission systems, we designed and fabricated a limiting amplifier with extremely high operation frequencies over 10-GHz using AlGaAs/GaAs heterojunction bipolar transistors (HBTs), and investigated their performances. Circuit design and simulation were performed using SPICE and LABRA. A discrete AlGaAs/GaAs HBT with the emitter area of 1.5${\times}$10$\mu\textrm{m}$$^2$, used for the circuit fabrication, exhibited the cutoff frequency of 63GHz and maximum oscillation frequency of 50GHz. After fabrication of MMICs, we observed the very wide bandwidth of DC∼15GHz for a limiting amplifier from the on-wafer measurement. Ceramic-packaged limiting amplifier showed the excellent eye opening, the output voltage swing of 750mV\ulcorner, and the rise/fall time of 40ps, measured at the data rates of 10-Gbit/s.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.10
• /
• pp.912-917
• /
• 2007

Many electrochemical power devices such as solid state batteries and solid oxide fuel cell have been studied and developed for solving energy and environmental problems. An amperometric gas sensor usually generates sensing signal of electric current along the proportion of the concentration of target gas under the condition of limiting current. For narrow variations of gas concentration, the amperometric gas sensor can show higher precision than a potentiometric gas sensor does. In additional, cross sensitivities to interfering gases can possibly be mitigated by choosing applied voltage and electrode materials properly. In order to improve the sensitivity to $NO_2$, the device was attached with Au reference electrode to form the amperometric gas sensor device with three electrodes. With the fixed bias voltage being applied between the sensing and counter electrodes, the current between the sensing and reference electrodes was measured as a sensing signal. The response to $NO_2$ gas was obviously enhanced and suppressed with a positive bias, respectively, while the reverse current occurred with a negative bias. The way to enhance the sensitivity of $NO_2$ gas sensor was thus realized. It was shown that the response to $NO_2$ gas could be enhanced sensitivity by changing the bias voltage.

• Proceedings of the KIEE Conference
• /
• 1998.07d
• /
• pp.1516-1518
• /
• 1998

$YBa_2Cu_3O_x$(Yl23) Superconducting thick films on $Y_2BaCuO_5$(Y211) substrate were Prepared by surface diffusion process between $BaCuO_2$+CuO composite coating powder and a Y2ll substrate. X-ray diffraction shows that the Yl23 layer onto Y2ll substrate is the orthorhombic crystal structure. The specimen heated at $940^{\circ}C$ for 2h showed the maximum $J_c$ fo 500A/$cm^2$. Based on optimal condition, the superconducting fault current limiter(FCL) having a current limiting area 1mm wide and 66mm long was fabricated on Y211 substrate. A typical current limiting waveform was measured. When a voltage of 3V was applied, the fault current with a peak of 15A was limited to about 0.11A.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.29 no.6
• /
• pp.70-77
• /
• 2015

This paper describes the experimental results obtained from various installation conditions of cascaded metal oxide varistor(MOV)-based SPDs with the objectives to analyze the coordination of the cascaded surge protective devices(SPDs) and to propose the proper selection and installation methods of the cascaded SPDs. The residual voltage, discharge current and energy sharing between the upstream and downstream SPDs in the $10/350{\mu}s$ direct lightning current wave were measured and discussed. The coordination of cascaded MOV-based SPDs is closely related to the varistor voltage and installation methods of SPDs. In cascaded SPDs without dedicated decoupling elements, the natural impedance of leads connecting two SPDs can act as a decoupler for the coordination of MOV-based SPDs. Even if the varistor voltage of the upstream SPD is higher than that of the downstream SPD at long distances between two SPDs, the energy coordination of cascaded SPDs could effectively be fulfilled in the conditions of large surge currents and the optimum voltage protection level can be achieved. Consequently, if the distance between voltage limiting type SPDs is long, the coordination of the cascaded SPDs should be determined by taking into account the decoupling effects due to the intrinsic inductance of leads connecting the upstream and downstream SPDs.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.26 no.4
• /
• pp.524-530
• /
• 2002

Micro electric spark discharge device was fabricated on a FOTURAN glass wafer using MEMS processing technique and its performance of electron discharge and subsequent formation of ignition kernel were tested. Micro electric spark device is an essential subsystem of a power MEMS that has been under development in this laboratories. In a combustion chamber of sub millimeter scale depth, spark electrodes are formed by electroplating Ni on a base plate of FOTURAN glass wafer. Optimization of spark voltage and spark gap is crucial for stable ignition and endurance of the electrodes. Namely, wider spark gaps insures stable ignition but requires higher ignition voltage to overcome the spark barrier. Also, electron discharge across larger voltage tends to erode the electrodes limiting the endurance of the overall system. In the present study, the discharge characteristics of the proptotype ignition device was measured in terms of electric quantities such as voltage and currant with spark gap and end shape as parameters. Discharge voltage shows a little decrease in width of less than 50㎛ and increases with electrode gap size. Reliability test shows no severe damage over 10$\^$6/ times of discharge test resulting in satisfactory performance for application to proposed power MEMS devices.

• Progress in Superconductivity and Cryogenics
• /
• v.18 no.2
• /
• pp.18-20
• /
• 2016

The study of superconducting fault current limiter (SFCL) is continuously being studied as a countermeasure for reducing fault-current in the power system. When the fault occurred in the power system, the fault-current was limited by the generated impedance of SFCLs. The operational characteristics of the flux-offset type SFCL according to turn ratios between the primary and the secondary winding of a reactor were compared in this study. We connected the secondary core to a superconductor and a SCR switch in series in the suggested structure. The fault current in the primary and the secondary winding of the reactor and the voltage of the superconductor on the secondary were measured and compared. The results showed that the fault current in the load line was the lowest and the voltage applied at both ends of the superconductor was also low when the secondary winding of the reactor had lower turn ratio than the primary. It was confirmed based on these results that the turn ratio of the secondary winding of the reactor must be designed to be lower than that of the primary winding to reduce the burden of the superconductor and to lower the fault current. Also, the suggested structure could increase the duration of the limited current by limiting the continuous current after the first half cycle from the fault with the fault current limiter.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
• /
• 2009.05a
• /
• pp.344-347
• /
• 2009

Surge protective devices (SPD) have a special position because of the expectation that they perform an effective protective function against various kinds of surges. However, there exists a misconception that the SPD satisfying lower measured limiting voltage (MLV) should also protect equipment against temporary overvoltages (TOVs) as well. This paper inspects various types of MOV based SPDs and carry out experiments on the side effects of the low MLV characteristics. The experiment results show that a low MLV could cause a higher TOV-induced SPD failure rate in the field.

• Journal of the Korean Magnetics Society
• /
• v.26 no.6
• /
• pp.201-205
• /
• 2016

In this report, we measured the impedance spectrum in TMR device, and the relaxation behavior of the real and imaginary impedance spectrum was analyzed by using the equilibrant circuit of tunneling capacitance ($C_T$) and tunneling resistance ($R_T$). The relaxation frequency was increased with AC voltage in both the parallel and antiparallel alignment of two magnetic layers. The $R_T$ with AC voltage showed the typical bias voltage dependence. However, the $C_T$ showed large value than the expected geometrical capacitance. The huge increase of $C_T$ was affecting as a limiting factor for the high speed operation of TMR devices. Thus, the supercapacitance of $C_T$ should be considered to design the high speed TMR devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.365-366
• /
• 2009

This study researched into the manufacture of current-limit module of using YBCO coated conductor. Regarding over-current of exceeding the critical current, the quench characteristics were researched according to the stabilizing layer through tendency in resistance, which is generated in conductor, by applying over-current to YBCO coated conductors, which have stabilizing layer. YBCO coated conductors, which were used in experiment, include one kind such as the conductor, which used stainless as the stabilizing layer. The critical current is 70 A. And, the critical temperature is with 90 K. First of all, the quench generation was researched under over-current of exceeding the critical current by using this YBCO coated conductors. The tendency of a rise in the detected voltage according to the applied current was measured. And, the tendency of a rise in resistance through voltage-current curve was measured. As a result, the point of time in thermal quench of conductor, which has stainless as the stabilizing layer, could be confirmed to be fast.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.4 no.3
• /
• pp.189-195
• /
• 2004

A 10 Gb/s limiting amplifier IC with the emitter area of $1.5{\times}10{\mu}m^2$ for optical transmission system was designed and fabricated with a AIGaAs/GaAs HBTs technology. In this stud)', we evaluated fine pitch bump using WL-CSP (Wafer Level-Chip Scale Packaging) instead of conventional wire bonding for interconnection. For this we developed WL-CSP process and formed fine pitch solder bump with the $40{\mu}m$ diameter and $100{\mu}m$ pitch on bonding pad. To study the effect of WL-CSP, electrical performance was measured and analyzed in wafer and package module using WL-CSP. In a package module, clear and wide eye diagram openings were observed and the riselfall times were about 100ps, and the output" oltage swing was limited to $600mV_{p-p}$ with input voltage ranging from 50 to 500m V. The Small signal gains in wafer and package module were 15.56dB and 14.99dB respectively. It was found that the difference of small signal gain in wafer and package module was less then 0.57dB up to 10GHz and the characteristics of return loss was improved by 5dB in package module. This is due to the short interconnection length by WL-CSP. So, WL-CSP process can be used for millimeter wave GaAs MMIC with the fine pitch pad.