• Journal of the Microelectronics and Packaging Society
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• v.15 no.1
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• pp.39-44
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• 2008

In this paper, fully embedded 2.4GHz WLAN band pass filter (BPF) was investigated into a multi-layered organic packaging substrate using high Q spiral stacked inductors and high Dk MIM capacitors for low cost RF System on Package (SOP) applications. The proposed 2.4GHz WLAN BPF was designed by modifying chebyshev second order filter circuit topology. It was comprised of two parallel LC resonators for obtaining two transmission zeros. It was designed by using 2D circuit and 3D EM simulators for finding out optimal geometries and verifying their applicability. It exhibited an insertion loss of max -1.7dB and return loss of min -l7dB. The two transmission zeros were observed at 1.85 and 6.7GHz, respectively. In the low frequency band of $1.8GHz{\sim}1.9GHz$, the stop band suppression of min -23dB was achieved. In the high frequency band of $4.1GHz{\sim}5.4GHz$, the stop band suppression of min -l8dB was obtained. It was the first embedded and the smallest one of the filters formed into the organic packaging substrate. It has a size of $2.2{\times}1.8{\times}0.77mm^3$.

• ETRI Journal
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• v.34 no.5
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• pp.674-683
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• 2012

We propose a slot antenna consisting of a rectangular slot on the ground plane, fed by a microstrip line with a rectangular-ring-shaped tuning stub that can be deployed in ultra-wideband (UWB) communication systems to avoid interference with wireless local area network (WLAN) communication. Our antenna can achieve a single band-notched property from the 5 GHz frequency to the 6 GHz frequency owing to a controllable band notch that uses L- and J-shaped parasitic elements. The antenna characteristics can be modified to tune the band-notched property (4 GHz to 5 GHz or 6 GHz to 7 GHz) and the bandwidth of the band notch (1 GHz to 2 GHz). Furthermore, the shifted notch with enhanced width of the band notch from 1 GHz to 1.5 GHz is described in this paper. The UWB slot antenna and L- and J-shaped parasitic elements also provide the band-rejection function for reference in the WiMAX (3.5 GHz) and WLAN (5 GHz to 6 GHz) regions of the spectrum. Experiment results evidence the return loss performance, radiation patterns, and antenna gains at different operational frequencies.

• Journal of the Optical Society of Korea
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• v.11 no.1
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• pp.26-33
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• 2007

We demonstrate the capability of differential-phase optical coherence tomography (DP-OCT) to detect superparamagnetic iron oxide (SPIO) nanoparticles taken up by liver parenchymeal macrophages (Kupffer cells). We apply an external time-varying high-intensity focused magnetic field. Our experiments demonstrate a novel diagnostic modality to detect macrophages that have taken up SPIO nanoparticles. Magnetic force acting on the nanoparticles was varied by applying a sinusoidal current to a solenoid containing a conical iron core that substantially increased and focused the magnetic field strength ($B_{max}$ = 2 Tesla). $ApoE^{-/-}$ mice were sacrificed 2 days post intravenous injections of different SPIO doses (1.0, and 0.1 mmol Fe/kg body weight). Livers of $ApoE^{-/-}$ mice with and without injection of SPIO nanoparticles were investigated using DP-OCT, which detects tissue movement with nanometer resolution. Frequency response of iron-laden liver movement was twice the stimulus frequency. Movement was not observed in livers of control mice. Results of our experiments indicate DP-OCT is a candidate methodology to detect tissue based macrophages containing SPIO nanoparticles excited by an external focused magnetic field.

• Journal of electromagnetic engineering and science
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• v.16 no.1
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• pp.44-51
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• 2016

A commercial $0.25{\mu}m$ GaN process is used to implement 6-18 GHz wideband power amplifier (PA) monolithic microwave integrated circuits (MMICs). GaN HEMTs are advantageous for enhancing RF power due to high breakdown voltages. However, the large-signal models provided by the foundry service cannot guarantee model accuracy up to frequencies close to their maximum oscillation frequency ($F_{max}$). Generally, the optimum output load point of a PA varies severely according to frequency, which creates difficulties in generating watt-level output power through the octave bandwidth. This study overcomes these issues by the development of in-house large-signal models that include a thermal model and by applying distributed L-C output load matching to reactive matched amplifiers. The proposed GaN PAs have successfully accomplished output power over 5 W through the octave bandwidth.

• ETRI Journal
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• v.31 no.6
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• pp.749-754
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• 2009

The design and performance of an InGaAs/InP transimpedance amplifier and post amplifier for 40 Gb/s receiver applications are presented. We fabricated the 40 Gb/s transimpedance amplifier and post amplifier using InGaAs/InP heterojunction bipolar transistor (HBT) technology. The developed InGaAs/InP HBTs show a cut-off frequency ($f_T$) of 129 GHz and a maximum oscillation frequency ($f_{max}$) of 175 GHz. The developed transimpedance amplifier provides a bandwidth of 33.5 GHz and a gain of 40.1 $dB{\Omega}$. A 40 Gb/s data clean eye with 146 mV amplitude of the transimpedance amplifier module is achieved. The fabricated post amplifier demonstrates a very wide bandwidth of 36 GHz and a gain of 20.2 dB. The post-amplifier module was fabricated using a Teflon PCB substrate and shows a good eye opening and an output voltage swing above 520 mV.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.553-554
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• 2006

In this paper, 77 GHz CPW power amplifier MMIC, which are consisted of a 2 stage driver stage and a power stage employing $8{\times}50um$ gate width, have been successfully developed by using 120nm $In_{0.4}AlAs/In_{0.35}GaAs$ Metamorphic high electron mobility transistors (MHEMTs). The devices show an extrinsic transconductance $g_m$ of 660 mS/mm, a maximum drain current of 700 mA/mm, and a gate drain breakdown voltage of -8.5 V. A cut-off frequency ($f_T$) of 172 GHz and a maximum oscillation frequency ($f_{max}$) of over 300 GHz are achieved. The fabricated PA exhibited high power gain of 20dB only with 3 stages. The output power is measured to be 12.5 dBm.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.11
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• pp.89-94
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• 2011

In this paper, we developed the W-band MMIC low noise amplifier for the millimeter-wave seeker using the tuner system. The MHEMT devices for MMIC LNA exhibited DC characteristics with a drain current density of 692mA/mm, an extrinsic transconductance of 726mS/mm. The current gain cutoff frequency(fT) and maximum oscillation frequency($f_{max}$) were 195GHz and 305GHz, respectively. The fabricated W-band low noise amplifier represented S21 gain of 7.42dB at 94 GHz and noise figure of 2.8dB at 94.2 GHz.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.85-90
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• 2002

$RuO_2$/GaN and related contacts were investigated for Schottky contacts in GaN-Based optical and electronic devices. We demonstrated that an $RuO_2$ film forms a stable Schottky contact on a GaN layer with a barrier height (${\Phi}_B$) of 1.46 eV and transmittance of 70% in the visible and near UV region. $RuO_2$/GaN Schottky diode showed a breakdown at over -50V and leakage current of only 0.3 nA at -5V. The $RuO_2$/GaN Schottky type photodetector had the UV/Visible rejection ratio of over $10^5$ and the responsivity of 0.23 A/W at 330 nm. The $RuO_2$ gate AlGaN/GaN EFET exhibited high drain current ($I_d$) of 689.3 mA/mm and high transconductance ($g_m$) of 197.4 mS/mm. Cut-Off frequency ($f_t$) and maximum operating frequency ($f_{max}$) were measured as 27.0 GHz and 45.5 GHz, respectively.

• ETRI Journal
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• v.33 no.5
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• pp.679-688
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• 2011

A new discrete-amplitude pulse width modulation (DAPWM) scheme for a high-efficiency linear power amplifier is proposed. A radio frequency (RF) input signal is divided into an envelope and a phase modulated carrier. The low-frequency envelope is modulated so that it can be represented by a pulse whose area is proportional to its amplitude. The modulated pulse has at least two different pulse amplitude levels in order that the duty ratios of the pulse are kept large for small input. Then, an RF pulse train is generated by mixing the modulated envelope with the phase modulated carrier. The RF pulse train is amplified by a switching-mode power amplifier, and the original RF input signal is restored by a band pass filter. Because duty ratios of the RF pulse train are kept large in spite of a small input envelope, the DAPWM technique can reduce loss from harmonic components. Furthermore, it reduces filtering efforts required to suppress harmonic components. Simulations show that the overall efficiency of the pulsed power amplifier with DAPWM is about 60.3% for a mobile WiMax signal. This is approximately a 73% increase compared to a pulsed power amplifier with PWM.

• Journal of Information Processing Systems
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• v.15 no.3
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• pp.670-681
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• 2019

Orthogonal frequency division multiplexing (OFDM) is a system which is used to encode data using multiple carriers instead of the traditional single carrier system. This method improves the spectral efficiency (optimum use of bandwidth). It also lessens the effect of fading and intersymbol interference (ISI). In 1995, digital audio broadcast (DAB) adopted OFDM as the first standard using OFDM. Later in 1997, it was adopted for digital video broadcast (DVB). Currently, it has been adopted for WiMAX and LTE standards. In this project, a Verilog design is employed to implement an OFDM transmitter (DAC block) and receiver (FFT and ADC block). Generally, OFDM uses FFT and IFFT for modulation and demodulation. In this paper, 16-point FFT decimation-in-frequency (DIF) with the radix-2 algorithm and direct summation method have been analyzed. ADC and DAC in OFDM are used for conversion of the signal from analog to digital or vice-versa has also been analyzed. All the designs are simulated using Verilog on ModelSim simulator. The result generated from the FFT block after Verilog simulation has also been verified with MATLAB.