• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.145-145
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• 2009

In this paper, we suggest how to adapt RFID system to train switching process, and then what we get the merit or problem. We analyze the train switching process to adapt RFID system on the process and have field test. The role of RFID system in train switching process is to automatically read car position information. The specification of the test system is 900MHz, and Gen2 passive tag. If we get the system which automatically read car position information in train switching yard, it prevents human errors and makes more reliability, the performance of train operation will grow up. Even though the environment of train switching yard is outdoors, the test result gives us the ability to adapt RFID system to train switching process and the process will be more simple.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2011.06a
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• pp.657-658
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• 2011

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.710-712
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• 2011

In this study, we fabricate resistive switching random access memory (ReRAM) devices constructed with a Al/$HfO_2$/ITO structure on glass substrates and investigate their memory characteristics. The hafnium oxide thin film used as a resistive switching layer is sputtered at room temperature in a sputtering system with a cooling unit. The Al/$HfO_2$/ITO device exhibits bipolar resistive switching characteristics, and the ratio of the high resistance (HRS) to low resistance states (LRS) is more than 60. In addition, the resistance ratio maintains even after $10^4$ seconds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.1103-1106
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• 2002

This paper presents SVC which use PAM method and eliminate harmonics. Inverter is connected directly so that SVC improve output voltage waveform into 24 steps. Inverter output waveform THD is reduced to 6.89%. Leading control of reactive power generated in power system is possible. Snubber is added to reduce switching loss.

• Journal of the Korean Society for Precision Engineering
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• v.28 no.8
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• pp.1000-1007
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• 2011

For enlarging the applications of microstereolithography, the use of diverse materials is required. In this study, the material switching system (MSS) for projection microstereolithography apparatus is proposed. The MSS consists of three part; resin level control, resin dispensing control, and vat level control. Curing characteristic of materials used in fabrication has been identified. Through repeated fabrication of test models, the critical fabrication error is investigated and a possible solution to this error is suggested. The developed system can be applied to improve the strength of microstructure and extended to fabricate an array of microstructures with multiple materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.4
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• pp.348-352
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• 2022

Resistive switching behaviors of a co-sputtered zinc silicate thin film (ZnO and SiO₂ targets) have been investigated. We fabricated an Ag/ZnSiO_x/highly doped n-type Si substrate device by using an RF magnetron sputter system. X-ray diffraction pattern (XRD) indicated that the Zn₂SiO₄ was formed by a post annealing process. A unique morphology was observed by scanning electron microscope (SEM) and atomic force microscope (AFM). As a result of annealing process, 50 nm sized nano clusters were formed spontaneously in 200~300 nm sized grains. The device showed a unipolar resistive switching process. The average value of the ratio of the resistance change between the high resistance state (HRS) and the low resistance state (LRS) was about 106 when the readout voltage (0.5 V) was achieved. Resistance ratio is not degraded during 50 switching cycles. The conduction mechanisms were explained by using Ohmic conduction for the LRS and Schottky emission for the HRS.

• Journal of the Semiconductor & Display Technology
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• v.20 no.1
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• pp.54-58
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• 2021

The RGO with controllable oxygen functional groups is a novel material as the active layer of resistive switching memory through a reduction process. We designed a nanoscale conductive channel induced by local oxygen ion diffusion in an Au / RGO+GQD / Al resistive switching memory structure. A strong electric field was locally generated around the Al metal channel generated in BIL, and the local formation of a direct conductive low-dimensional channel in the complex RGO graphene quantum dot region was confirmed. The resistive memory design of the complex RGO graphene quantum dot structure can be applied as an effective structure for charge transport, and it has been shown that the resistive switching mechanism based on the movement of oxygen and metal ions is a fundamental alternative to understanding and application of next-generation intelligent semiconductor systems.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.21-30
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• 2018

Driven by the recent energy saving trend, conventional silicon based power conversion modules are being replaced by modules using silicon carbide. Previous papers have focused mainly on the electrical advantages of silicon carbide semiconductors that can be used to design switching devices with much lower losses than conventional silicon based devices. However, no systematic study of their thermomechanical reliability in power conversion modules using finite element method (FEM) simulation has been presented. In this paper, silicon and silicon carbide based power devices with three-phase switching were designed and compared from the viewpoint of thermomechanical reliability. The switching loss of power conversion module was measured by the switching loss evaluation system and measured switching loss data was used for the thermal FEM simulation. Temperature and stress/strain distributions were analyzed. Finally, a thermal fatigue simulation was conducted to analyze the creep phenomenon of the joining materials. It was shown that at the working frequency of 20 kHz, the maximum temperature and stress of the power conversion module with SiC chips were reduced by 56% and 47%, respectively, compared with Si chips. In addition, the creep equivalent strain of joining material in SiC chip was reduced by 53% after thermal cycle, compared with the joining material in Si chip.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.101-104
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• 1996

A new detecting system for moving objects of coastal region has been designed by directional antenna and driving circuits. The designed system has been investigated by CAD for linear and planar antenna arrays of various radiating elements for antenna simulations and by P-spice of device simulations. For detecting the displacement of moving objects, we constructed four wideband dipole antenna, diode switching circuit, mixer, filter and amplifier. The results of antenna receiver were shown a possibility of distance measuring system through phase difference of radiation patterns in antenna simulation

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.519-522
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• 2001

Recently, the battery charging technology and reducing technology of harmonics on AC input line are rising importantly according to increasing electrical facilities that it has been replaced battery with emergency power. In this study, I proposed that an auto-charging circuit of battery has low cost with simple-construction circuit, relative, harmonics reduction with diode tap-change method, high reliability of system for using characteristics of thyristor switching. In case of this circuit, convenience and reliability of maintenance of battery power units were more improved. 1 think that it is resulted in effect of prevention to shortening of battery life from over-charging and over-discharging and decrease of harmonics obstacle on AC input line.