• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.2
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• pp.92-97
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• 2013

In this paper the author proposes a method of implementing a numerical model for threshold voltage ($V_{th}$) shift in organic thin-film transistors (OTFTs) into SPICE tools. $V_{th}$ shift is first numerically modeled by dividing the shift into sequentially ordered groups. The model is then used to derive a simulations model which takes into simulation parameters and calculation complexity. Finally, the numerical and simulation models are implemented in AIM-SPICE. The SPICE simulation results agree well with the $V_{th}$ shift obtained from an OTFT fabricated without any optimization. The proposed method is also used to implement the stretched-exponential time dependent $V_{th}$ shift in AIM-SPICE and the results show the proposed method is applicable to various types of $V_{th}$ shifts.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.869-872
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• 2003

This paper presents a geometric machining simulation algorithm to enhance the reliability and user-friendliness of a comprehensive computer aided process planning (CAPP) system by verifying generated NC data. In order to represent the complex machining geometry with high accuracy, the proposed algorithm is developed based on a boundary representative (B-rep) solid modelling kernel. Solid models are used to represent the part geometry. tool swept volume and material removal volume by Boolean unite and subtract operations. By integrating a machining simulation procedure into the CAPP system, the systematic analysis of the tool path can be implemented synthetically. To demonstrate and check the validity of suggested system, a simple example of simulation is represented and the result is discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.210-211
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• 2008

탄화규소를 이용한 600V급 MOSFET 소자 제작을 위하여 특성 simulation을 수행하였다. 600V 내압을 얻기 위해서 불순물 농도가 1E16/cm3이고 에피층의 두께가 6um인 상용 탄회규소 웨이퍼를 기준으로 하였으며 TRIM simulation을 사용하여 P-body의 retrograde profile을 구하고 이를 이용하여 소자의 전기적 특성을 simulation 하였다. P-body의 표면 농도를 5E16/cm3 에서 1E18/cm3으로 변화시키면서 소자의 전기적 특성을 예측하였으며 실험 결과와 비교하여 특성 변수를 추출하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.311-316
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• 2003

Effects of pores on the microwave properties in microwave dielectric ceramics were studied by a computer simulation. Scattering matrix S$\_$21/ obtained from the network analyzer was compared to the S$\_$21/ obtained from the simulation. From electric field distribution, the dominant resonant TE$\_$01$\delta$/ mode could be easily determined. The effects of the porosity and pore size inside the dielectrics on the microwave properties were investigated by the HFSS simulation. When the total pore volume remains constantly, the quality factor decreased as the pore size Increases. As the total pore volume of the dielectrics increased. quality factor decreased.

• Journal of Industrial Technology
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• v.31 no.A
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• pp.3-9
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• 2011

Simulation plays an important role for system analysis. In this study, a manufacturing system has been analyzed through computer simulation. We first briefly explain the considered system with prevailing problems. We then build a simulation model using ARENA simulation language. Based on two selected performance measures, material transporter load and hourly throughput, explicit system analyses have been performed. We addressed four parameters - variation of the processing time, number of raw material transporters, quality failure rate, and machine failures - as the input parameters affecting the output measures selected. We adopted Taguchi's orthogonal array in statistical experimental design and drew meaningful results from the analysis. The results given in the study may provide a good guidance for practical applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.567-570
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• 2000

Thermal simulation of typical stack-type and newly proposed planar-type micro-gas sensors were studied by FEM method. the thermal analysis for the proposed planar structure including temperature distribution over the sensing layer and power consumption of the heater were carried using finite element method by computer simulation and well compared with those of typical stack-type micro-gas sensor. The thermal properties of the microsensor from thermal simulation were compared with those of an actual device to investigate the acceptability of the computer simulation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.2
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• pp.106-113
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• 2000

This study describes how a properly calibrated simulation method could be used to investigate the latchup immunity characteristics among the various high energy ion implanted CMOS twin well (retro-grade/BILLI/BL) structures. To obtain the accurate quantitative simulation analysis of retrograde well, a global tuning procedure and a set of grid specifications for simulation accuracy and computational efficiency are carried out. The latchup characteristics of BILLI and BL structures are well predicted by applying a calibrated simulation method for retrograde well. By exploring the potential contour, current flow lines, and electron/hole current densities at the holding condition, we have observed that the holding voltage of BL structure is more sensitive to the well design rule (p+to well edge space /n +to well edge space) than to the retrograde well itself.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.138-139
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• 2007

탄화규소반도체소자는 wide band-gap 반도체 재료로 고전압, 고속스위칭 특성이 우수하여 차세대 전력반도체소자로 매우 유망한 소자이다. 이러한 물리적 특성으로 전력변환소자인 고전압 MOSFET 소자를 개발하기 위한 연구가 활발히 진행되고 있다. 그러나 MOS 소자에서 가장 중요한 게이트 산화막의 특성이 소자에 적용하기에는 그 특성이 많이 취약한 상태이다. 따라서 이러한 단점을 해결하여 고전압 전력변환소자로 적용하기 위하여 게이트 산화막이 필요없는 JFET 소자가 많이 연구되고 있다. 본 논문에서는 JFET 소자를 normally-off type으로 동작시키기 위하여 게이트의 구조, 도핑농도 및 게이트 폭을 조절하여 simulation를 수행하였다. 케이트의 농도 및 접합깊이에 따라 normally-on 또는 off 특성에 큰 영향을 미치고 있으며 게이트 트렌치구조의 깊이에 따라서도 영향을 받는다. 본 simulation 결과 최적의 트렌치 길이, 폭 및 농도로 소자를 구성하여 $1.3m{\Omega}cm^2$의 온-저항 특성을 얻을 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.353-356
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• 2004

This paper discribes the analysis of the I-V characteristics of 4H-SiC DiMOSFET with single epi-layer Silicon Carbide has been around for over a century. However, only in the past two to three decades has its semiconducting properties been sufficently studied and applied, especially for high-power and high frequency devices. We present a numerical simulation-based optimization of DiMOSFET using the general-purpose device simulator MINIMIS-NT. For simulation, a loin thick drift layer with doping concentration of $5{\times}10^{15}/cm^3$ was chosen for 1000V blocking voltage design. The simulation results were used to calculate Baliga's figure of Merit (BFOM) as the criterion structure optimization and comparison.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.449-457
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• 2011

Effect of pump combinations on the vacuum characteristics of vacuum system was simulated for optimum design of system. In this investigation, the feasibility of modelling mechanism for VacSimMulti simulator was proposed. Simulation results of various pumping combinations showed the possibilities and reliabilities of simulation for the performance of vacuum system in specific semiconductor processing. Simulation of roughing pump presented the expected pumping behaviors based on commercial specifications of employed pumps. Application of booster pump exhibited the high pumping efficiency for middle vacuum range. Combinations of optimum backing pump for diffusion and turbo vacuum system were obtained. And, the predictable characteristics of process application of both simulated systems were also acquired.