• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.423-426
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• 2000

The 3-D $31.5$\times$31.5$\times$2.5mm$^3$model of contour vibration mode piezoelectric transformer with Pb($Ni_{1/2}$$W_{1/2}$)$O_3$-Pb(Zr,Ti)$O_3$ ceramics was simulated by ANSYS according to the dot size 17, 18, 19, 20, 21 $mm\phi$ and analyzed the results. The mechanical quality factor of the 3-D model was decreased with the dot size and increased as 2605 at 20 $mm\phi$ and after then decreased again. The output voltage of that sample was 74123 [V] and the maximum stress of the dot electrode at that sample was 288[$10^7$N/$m^2$] and the maximum displacement of the ring electrode at that sample was 128 [$\mu\textrm{m}$].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.209-212
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• 1999

We studied the operating properties of resistive and inductive SFCLS with 100 $\Omega$ of quench impedance for a three-phase-fault in the 154 kV transmission system. The fault simulation at the phase angles 0$^{\circ}$ , 45$^{\circ}$ , and 90$^{\circ}$ showed that the resistive SFCL limited the fault current less than 16 kA without any DC component after one half cycle from the instant of the fault. On the other hand, the inductive SFCL suppressed the current below 11 kA, but with 3-4 kA of DC component which decreased to zero in 5 cycles. We concluded that the inductive SFCL had higher performance in current limiting but the resistive SFCL was better from the view point of DC components.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.798-801
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• 2000

For the performance enhancement of communication system, high quality filters are required. Also a minimization of size of filter is required for the interation of devices in the limited area. Conventional metal filters made of copper can be substituted by high quality high temperature superconducting(HTS) films for better performance. Hairpin type filters have been designed with the center frequency 14 GHz for the size reduction. 3-pole and 4-pole filters centered at 14 GHz with the bandwidth of about 300 MHz were designed and fabricated. With the simulation results, the frequency responses showed low insertion loss and sharp skirts characteristics. The frequency response of HTS 14 GHz fi1ter was measured at 77 K and compared with the simulation results. We have compared YBCO filters and copper filters which were made with the same design rules. Simulated and measured frequency responses reveal that HTS YBCO hairpin type bandpass filters show better performance than copper filters.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.196-199
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• 2004

본 연구에서는 최초로 TFT-LCD의 단위 화소 내에 존재하는 화소 및 각종 전극간 저항 성분을 총 소비전력으로부터 엄정하게 계산하였다. 단위 화소 내의 총 소비전력은 3차원적 액정의 분자배열 분포에 대하여, 전류 연속방정식을 만족하는 전위 분포로부터 얻어졌으며, 전위 분포의 시뮬레이션에 있어서는 유한한 크기의 복수 전극에 의한 측면 전장 효과가 고려되었다. 그 결과, 3차원적인 방법으로 계산된 정확한 화소 저항은 기존의 접근방법으로부터 얻어진 값에 비하여 무려 15% 가량 작은 것이 확인되었으며, 또한 데이터-공통 전극 및 화소-데이터 전극 간 저항 또한 무시할 수 없을 정도의 값이 나타남을 확인하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.142-145
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• 2002

This paper describes an influence of system voltage harmonics on arrester deterioration diagnostic techniques based on leakage current measurement because the resistive current is composed of two components caused by nonlinear characteristics of arrester and by system voltage harmonics. Resistive leakage currents of arresters, which can be evaluated by the third harmonic component of total leakage currents, increase with its deterioration progress. In this paper, we developed a PSpice model for ZnO arrester to simulate the harmonics' effect described above. In simulation, pure sinusoidal voltage and the $3^{rd}$ harmonic voltage are applied to the model, and the leakage current changes are compared. The simulation results showed that the magnitudes of resistive leakage current depend not only on the phase of system voltage harmonics but also on the magnitude of it.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.529-530
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• 2005

A voltage driving AMOLED(Active Matrix Organic Light Emitting Diode) is useful for large-sized, high resolution OLED display. The conventional 2-TFTs, 1-CAP AMOLED circuit suffer from the threshold voltage variation of TFT. In this paper, a new AMOLED structure is proposed. It is composed of 5-TFTs and 2-capacitors. It is described that the operating principle and the characteristics of the proposed structure and is verified the performance by HSPICE simulation. The result of simulation shows that the effect of the threshold voltage variation in this circuit, is able to neglect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.225-226
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• 2005

In this Study, we have acquired 5-simulation Fault types Signals of high voltage Motor stator winding using epoxy/mica coupler. In order to know stator winding fault type using fault signals, we have performed feature extraction to apply wavelet transform technique. we have obtained skewness and kurtosis as statistical parameters of fault signal pattern from non deterioration state winding. We have know that 5 fault signals types have done an exponential function pattern shape but individually fault a class widely was different each other a signal waveform of pattern.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.76-78
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• 2005

We coupled fluid balance equation and director balance equation from Ericksen-Leslie's continuum theory and observed the motion of Twisted Nematic (TN) Liquid Crystals. We simulated flow velocity distribution and director distribution. We interpreted the dynamic response characteristic caused by the flow. As the result of the simulation, We could see the flow effect. And this flow caused abnormal twist to 4msec in switching off state. We could prove that this abnormal twist is a direct cause of optical bounce phenomenon known well until now with the result of simulation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.21-22
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• 2005

Partially-depleted Silicon on insulator metal-oxide-semiconductor field- effect transistors (PD-SOI MOSFETs) with Silicon-germanium (SiGe) layer is investigated. This structure uses SiGe layer to reduce the kink effect in the floating body region near the bottom channel/buried oxide interface. Among many design parameters influencing the performance of the device, Ge composition is presented most predominant effects, simulation results show that kink effect is reduced with increase the Ge composition. Because the bandgap of SiGe layer is reduced at higher Ge composition, the hole current between body and SiGe layer is enhanced.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.10
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• pp.794-798
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• 2011

This paper was carried out design of 1,700 V Base Resistance Thyristor for fabrication. We decided conventional BRT (base resistance thyristor) device and Trench Gate type one for design. we carried out device and process simulation with T-CAD tools. and then, we have extracted optimal device and process parameters for fabrication. we have analysis electrical characteristics after simulations. As results, we obtained 2,000 V breakdown voltage and 3.0 V Vce,sat. At the same time, we carried out field ring simulation for obtaining high voltage.