Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Study on Design and Electric Characteristics of MOS Controlled Thyristor for High Breakdown Voltage

고내압용 MOS 구동 사이리스터 소자의 설계 및 전기적 특성에 관한 연구

  • Hong, Young-Sung (Department of Photovoltaic Engineering, Far East University) ;
  • Chung, Hun-Suk (Department of Photovoltaic Engineering, Far East University) ;
  • Jung, Eun-Sik (Department of Electrical Engineering, Korea University) ;
  • Kang, Ey-Goo (Department of Photovoltaic Engineering, Far East University)
  • Received : 2011.09.14
  • Accepted : 2011.09.24
  • Published : 2011.10.01
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Abstract

This paper was carried out design of 1,700 V Base Resistance Thyristor for fabrication. We decided conventional BRT (base resistance thyristor) device and Trench Gate type one for design. we carried out device and process simulation with T-CAD tools. and then, we have extracted optimal device and process parameters for fabrication. we have analysis electrical characteristics after simulations. As results, we obtained 2,000 V breakdown voltage and 3.0 V Vce,sat. At the same time, we carried out field ring simulation for obtaining high voltage.

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References

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